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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9Z10

Name: IRF9Z10
Brand: Vishay Siliconix
SKU: IRF9Z10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z10

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF9Z10.pdf

Description:: MOSFET P-CH 60V 6.7A TO220AB

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Product details

Overview

IRF9Z10 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -60 V V_DS, 0.50 Ω R_DS(on) at V_GS = -10 V, and -6.7 A continuous drain current at T_C = 25 °C. It delivers fast switching, repetitive avalanche capability, and 175 °C junction operation-ideal for DC-DC synchronous buck converters and high-side load switches in industrial power supplies.

For engineers reviewing the IRF9Z10 datasheet, IRF9Z10 pinout, IRF9Z10 application, or IRF9Z10 equivalent, key selection criteria include its negative threshold voltage (-2.0 to -4.0 V), low gate charge (12 nC total), body diode recovery performance (80–160 ns trr), and thermal resistance (R_thJC = 3.5 °C/W), all critical for high-efficiency, thermally constrained designs.

Technical Context

The IRF9Z10 operates as a high-side switch in P-channel configuration, requiring negative gate drive relative to source. Its -60 V V_DS rating and -6.7 A I_D support 24 V and 48 V bus systems with margin for transients and inductive kickback.

It features intrinsic avalanche ruggedness (E_AS = 140 mJ, I_AR = -6.7 A), dynamic dV/dt immunity (-4.5 V/ns), and low C_iss (270 pF) enabling stable operation in hard-switched topologies without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Withstands reverse-biased drain-source voltage up to 60 V, suitable for 48 V nominal systems with 20 % overvoltage margin.
R_DS(on) @ V_GS = -10 V	0.50 Ω - Enables ≤3.4 W conduction loss at -4.7 A (T_C = 100 °C), supporting compact heatsink design.
Q_g (total)	12 nC - Low gate charge reduces driver power and enables efficient PWM control at 100–500 kHz switching frequencies.
I_D (continuous)	-6.7 A @ T_C = 25 °C - Supports medium-power loads such as motor drivers and telecom hot-swap circuits.
T_J max	+175 °C - Allows operation in high-ambient environments like enclosed industrial enclosures or automotive under-hood zones.
E_AS	140 mJ - Absorbs unclamped inductive energy during turn-off, eliminating need for external clamping in flyback or relay-drive applications.

Pinout & Package

IRF9Z10 uses the standard TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 3.5 °C/W) and mechanical robustness for through-hole mounting on PCBs with heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; must be electrically isolated from chassis unless system ground reference permits direct mounting.
Gate	Control terminal for channel conduction	Requires negative voltage relative to source to turn on; threshold range -2.0 to -4.0 V ensures compatibility with standard logic-level gate drivers.
Source	Reference node for gate drive and current return	Serves as common reference for gate drive circuitry; connects to positive rail in high-side switch configurations.

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports reliable operation under repeated inductive switching stress (I_AR = -6.7 A, E_AR = 4.3 mJ), reducing need for external protection components.
Dynamic dV/dt rating	-4.5 V/ns immunity prevents false turn-on during high-speed voltage transients in noisy industrial environments.
Fast switching	Turn-on delay 11 ns + rise time 63 ns enables high-frequency DC-DC conversion with minimal dead-time losses.
Low R_DS(on) temperature coefficient	Normalized R_DS(on) remains stable across -55 to +175 °C (Fig. 4), ensuring predictable conduction loss over full operating range.
Body diode with low Q_rr	Reverse recovery charge of 0.096–0.19 μC minimizes switching loss and EMI in freewheeling paths of synchronous rectifiers.

Applications

High-Side Load Switch	Synchronous Buck Converter
Use Scenario: Controlled power-up sequencing for FPGA or microcontroller subsystems in industrial PLCs. IC Role / Device Role / Timing Role: High-side P-channel switch enabling controlled inrush current and fault-isolated power delivery. Use Value: Leverages -60 V rating and -6.7 A current capacity to handle 24 V/3 A loads with margin; avalanche rating protects against back-EMF from solenoid loads.	Use Scenario: Upper switch in non-isolated 48 V-to-12 V step-down converter for telecom base station power modules. IC Role / Device Role / Timing Role: Main high-side switching element synchronized with N-channel low-side MOSFET. Use Value: 12 nC Q_g and 270 pF C_iss enable efficient 300 kHz operation; low R_DS(on) reduces conduction loss while maintaining thermal headroom.
Motor Drive Half-Bridge	Hot-Swap Controller
Use Scenario: Upper leg in H-bridge driving 24 V brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: P-channel high-side switch complementing N-channel low-side in bidirectional drive topology. Use Value: Repetitive avalanche rating absorbs inductive energy during PWM commutation; 175 °C T_J supports sealed motor controller enclosures.	Use Scenario: Inrush current limiter and fault disconnect in redundant 48 V server power distribution units. IC Role / Device Role / Timing Role: Primary series pass device controlling hot-insertion of line cards into live backplanes. Use Value: -4.5 V/ns dV/dt immunity prevents spurious turn-on during plug-in transients; body diode forward drop (-5.5 V at -6.7 A) supports reverse-current blocking.

High-Side Load Switch

Synchronous Buck Converter

Use Scenario: Controlled power-up sequencing for FPGA or microcontroller subsystems in industrial PLCs.

IC Role / Device Role / Timing Role: High-side P-channel switch enabling controlled inrush current and fault-isolated power delivery.

Use Value: Leverages -60 V rating and -6.7 A current capacity to handle 24 V/3 A loads with margin; avalanche rating protects against back-EMF from solenoid loads.

Use Scenario: Upper switch in non-isolated 48 V-to-12 V step-down converter for telecom base station power modules.

IC Role / Device Role / Timing Role: Main high-side switching element synchronized with N-channel low-side MOSFET.

Use Value: 12 nC Q_g and 270 pF C_iss enable efficient 300 kHz operation; low R_DS(on) reduces conduction loss while maintaining thermal headroom.

Motor Drive Half-Bridge

Hot-Swap Controller

Use Scenario: Upper leg in H-bridge driving 24 V brushed DC motors in factory automation actuators.

IC Role / Device Role / Timing Role: P-channel high-side switch complementing N-channel low-side in bidirectional drive topology.

Use Value: Repetitive avalanche rating absorbs inductive energy during PWM commutation; 175 °C T_J supports sealed motor controller enclosures.

Use Scenario: Inrush current limiter and fault disconnect in redundant 48 V server power distribution units.

IC Role / Device Role / Timing Role: Primary series pass device controlling hot-insertion of line cards into live backplanes.

Use Value: -4.5 V/ns dV/dt immunity prevents spurious turn-on during plug-in transients; body diode forward drop (-5.5 V at -6.7 A) supports reverse-current blocking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPbF	V_DS = -100 V, R_DS(on) = 0.30 Ω @ -10 V, Q_g = 80 nC - higher voltage rating but significantly higher gate charge.	Better suited for 72 V or 96 V bus systems; slower switching limits use above 50 kHz.	Select when higher V_DS margin is required and switching frequency is ≤100 kHz.
IXTP10P10P	V_DS = -100 V, R_DS(on) = 0.90 Ω @ -10 V, Q_g = 16 nC - higher on-resistance but lower gate charge than IRF9530.	Offers improved dV/dt immunity (-5.0 V/ns) and tighter V_GS(th) tolerance, better for precision gate drive.	Prefer when enhanced transient immunity and tighter threshold control outweigh R_DS(on) penalty.

Compared with IRF9Z10, IRF9530NPbF trades faster switching and lower drive loss for higher voltage capability, while IXTP10P10P provides superior dV/dt immunity and threshold consistency at the cost of higher conduction loss-making IRF9Z10 optimal for 48 V, medium-frequency, thermally constrained applications.

Availability

IRF9Z10 is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and telecom hot-swap circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRF9Z10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF9Z10 belongs to Vishay's third-generation power MOSFET family, engineered for optimal balance of low R_DS(on), fast switching, rugged avalanche performance, and cost-effective TO-220 packaging for commercial-industrial power conversion.

FAQ

What is the maximum continuous drain current for IRF9Z10 at 100 °C case temperature?

The IRF9Z10 supports -4.7 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be verified against actual board-level thermal resistance and ambient conditions in the final design. The IRF9Z10's R_thJC of 3.5 °C/W enables effective heatsinking to sustain this current in real-world applications.

Does IRF9Z10 have a built-in body diode, and what are its key parameters?

Yes, the IRF9Z10 integrates a body diode formed by the MOSFET's inherent p-n junction. Key parameters include V_SD = -5.5 V at -6.7 A and T_J = 25 °C, reverse recovery time t_rr of 80–160 ns, and Q_rr of 0.096–0.19 μC. These values are measured under standardized conditions (IF = -6.7 A, dI/dt = 100 A/μs) and directly impact freewheeling efficiency and EMI in buck or half-bridge topologies using the IRF9Z10.

Is IRF9Z10 suitable for logic-level gate drive?

No, the IRF9Z10 is not a logic-level MOSFET. Its gate-source threshold voltage V_GS(th) ranges from -2.0 V to -4.0 V, and it is fully enhanced at V_GS = -10 V per the R_DS(on) specification. Driving it with only 3.3 V or 5 V logic signals will result in high R_DS(on) and excessive conduction loss. The IRF9Z10 requires a dedicated negative gate driver or level-shifting circuit to achieve optimal performance.

What is the avalanche energy rating of IRF9Z10, and how is it tested?

The IRF9Z10 is rated for 140 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = -25 V, starting T_J = 25 °C, L = 6.23 mH, R_g = 25 Ω, and I_AS = -6.7 A. This rating confirms its ability to safely absorb inductive energy during unclamped inductive switching events-critical for relay drivers, solenoid controls, and flyback converters where the IRF9Z10 may experience voltage overshoot beyond V_DS.

How does the IRF9Z10's dV/dt rating affect its reliability in noisy environments?

The IRF9Z10 has a specified peak diode recovery dV/dt rating of -4.5 V/ns, meaning it can withstand rapid voltage transients across drain-source without unintended turn-on via capacitive coupling. This parameter is essential in industrial motor drives or power supplies with high EMI, where the IRF9Z10's immunity prevents shoot-through or erratic behavior-enhancing system robustness without additional gate resistors or snubbers.

IRF9Z10 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 6.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF9Z10 FAQ

1.How can I place an order for IRF9Z10 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z10 reliable?

The price and inventory of IRF9Z10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z10 is usually 5 days.

3.What payment methods are accepted for IRF9Z10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z10?

IRF9Z10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z10?

For technical support, including IRF9Z10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z10 requirements.

6.How does Aetrix verify that IRF9Z10 is sourced from the original manufacturer or authorized distributors?

All IRF9Z10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z10 meets industry standards.

7.What is the process for return or replacement of IRF9Z10?

All IRF9Z10 units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z10 part is unused and in its original packaging.

Return procedure for IRF9Z10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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