Vishay Siliconix IRF9Z10PBF

Overview

IRF9Z10PBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -60 V V_DS, 0.50 Ω R_DS(on) at V_GS = -10 V, and -6.7 A continuous drain current at T_C = 25 °C. It delivers fast switching, repetitive avalanche capability, and 175 °C junction operation-used in DC-DC converters, motor control H-bridges, and high-side load switches.

For engineers reviewing the IRF9Z10PBF datasheet, IRF9Z10PBF pinout, IRF9Z10PBF application, or IRF9Z10PBF equivalent, key selection criteria include verified -60 V blocking, confirmed 0.50 Ω on-resistance at -10 V gate drive, documented 140 mJ single-pulse avalanche energy, and TO-220AB thermal performance with R_thJC = 3.5 °C/W.

Technical Context

This device operates as a high-side switch in buck regulators and polarity-reversal circuits, leveraging its P-channel topology to eliminate bootstrap complexity. Its -4.5 V/ns peak diode recovery dV/dt rating and -5.5 V body diode forward voltage (at -6.7 A) support robust synchronous rectification and inductive load commutation.

The MOSFET features third-generation silicon design with optimized gate charge profile: Q_g = 12 nC, Q_gd = 5.1 nC, and Q_gs = 3.8 nC-enabling predictable turn-on/turn-off timing (t_d(on) = 11 ns, t_f = 31 ns) under standard 24 Ω gate drive conditions.

Key Specifications

Pinout & Package

IRF9Z10PBF uses the industry-standard TO-220AB package with vertical lead orientation and isolated tab (drain-connected). The package provides low thermal resistance (R_thJC = 3.5 °C/W), mechanical robustness, and compatibility with standard mounting hardware (6-32 or M3 screw, 10 lbf·in torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IRF9530NPbF and DMG2305UVT-7, the IRF9Z10PBF occupies a mid-voltage, medium-power niche: it offers superior switching speed over the IRF9530NPbF and higher voltage capability than the DMG2305UVT-7, making it optimal for 24–48 V industrial DC-DC and motor control where thermal management and gate drive simplicity are prioritized.

Availability

IRF9Z10PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and reverse polarity protection systems requiring stable component supply, RoHS-compliant packaging, and long-term industrial availability.

Supply support for IRF9Z10PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRF9Z10PBF belongs to Vishay's third-generation power MOSFET family, engineered for commercial and industrial power conversion where fast switching, avalanche robustness, and ease of paralleling are critical.

FAQ

What is the maximum continuous drain current for IRF9Z10PBF at 100 °C case temperature?

The IRF9Z10PBF supports -4.7 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the TO-220AB package and ensures junction temperature remains within the +175 °C maximum under sustained load. Designers must verify heatsink performance to maintain this case temperature under actual operating conditions. The IRF9Z10PBF datasheet specifies linear derating beyond 25 °C at 0.29 W/°C.

Is IRF9Z10PBF suitable for avalanche operation in unclamped inductive switching?

Yes, the IRF9Z10PBF is explicitly rated for repetitive avalanche operation with I_AR = -6.7 A and E_AR = 4.3 mJ, and single-pulse avalanche energy of 140 mJ. These values are measured under defined test conditions (V_DD = -25 V, L = 6.23 mH, R_g = 25 Ω). The IRF9Z10PBF's ruggedized silicon design allows reliable energy absorption without external snubbers in flyback or relay-driving applications.

What is the gate-source threshold voltage range for IRF9Z10PBF?

The IRF9Z10PBF has a gate-source threshold voltage (V_GS(th)) range of -2.0 V to -4.0 V, specified at V_DS = V_GS and I_D = -250 μA. This means the device begins conducting significantly around -2.0 V and is fully enhanced near -4.0 V. For robust turn-on, a gate drive of -10 V is recommended to achieve the rated 0.50 Ω R_DS(on). The IRF9Z10PBF is not a logic-level part and requires dedicated negative gate bias in most applications.

Does IRF9Z10PBF have a built-in body diode, and what are its key parameters?

Yes, the IRF9Z10PBF integrates a parasitic body diode inherent to its vertical P-channel MOSFET structure. Key diode parameters include: continuous forward current I_S = -6.7 A, pulsed current I_SM = -27 A, forward voltage V_SD = -5.5 V at -6.7 A and 25 °C, and reverse recovery time t_rr = 80–160 ns. These values confirm suitability for freewheeling and synchronous rectification roles where moderate-speed recovery is acceptable. The IRF9Z10PBF body diode is not optimized for ultrafast recovery but is fully characterized for standard inductive load handling.

What is the thermal resistance from junction to case (R_thJC) for IRF9Z10PBF?

The IRF9Z10PBF has a maximum junction-to-case thermal resistance (R_thJC) of 3.5 °C/W, measured from die junction to the TO-220AB drain tab surface. This value assumes proper mounting with a flat, greased heatsink interface. It enables accurate junction temperature estimation using T_J = T_C + (P_D × R_thJC). At 43 W maximum power dissipation, this yields ~150 °C temperature rise above case-well within the +175 °C limit. The IRF9Z10PBF's low R_thJC supports compact thermal design in space-constrained industrial modules.