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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9Z10PBF-BE3

Name: IRF9Z10PBF-BE3
Brand: Vishay Siliconix
SKU: IRF9Z10PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z10PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF9Z10PBF-BE3.pdf

Description:: MOSFET P-CH 60V 6.7A TO220AB

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Product details

Overview

IRF9Z10PBF-BE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -60 V V_DS, 0.50 Ω R_DS(on) at V_GS = -10 V, and -6.7 A continuous drain current at T_C = 25 °C. It delivers fast switching, repetitive avalanche capability, and 175 °C junction operation-ideal for DC-DC synchronous rectification and high-side load switching in industrial power supplies.

For engineers reviewing the IRF9Z10PBF-BE3 datasheet, IRF9Z10PBF-BE3 pinout, IRF9Z10PBF-BE3 application, or IRF9Z10PBF-BE3 equivalent, key selection criteria include verified -60 V blocking rating, confirmed 12 nC total gate charge, documented body diode recovery time (80–160 ns), and TO-220AB thermal resistance (R_thJC = 3.5 °C/W) for thermal design validation.

Technical Context

This device operates as a high-side switch in buck converters and motor control H-bridges, leveraging its negative threshold voltage (-2.0 to -4.0 V) and low gate charge (12 nC) for efficient gate drive with standard logic-level or dedicated P-channel drivers. Its ruggedized construction supports unclamped inductive switching with 140 mJ single-pulse avalanche energy.

The integrated body diode exhibits V_SD = -5.5 V at -6.7 A and reverse recovery charge Q_rr = 0.096–0.19 μC, enabling reliable freewheeling in hard-switched topologies without external Schottky supplementation under moderate dI/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum drain-source blocking voltage; defines safe operating range in high-side configurations up to 48 V bus systems.
R_DS(on)	0.50 Ω @ V_GS = -10 V - Conduction loss of 22.5 W at -6.7 A; enables compact heatsinking in <50 W power stages.
Q_g	12 nC - Total gate charge determines driver power requirement and switching speed; compatible with low-current gate drivers (e.g., TC4427).
I_D (cont.)	-6.7 A @ T_C = 25 °C - Continuous current rating at case temperature; derates linearly to -4.7 A at 100 °C case.
E_AS	140 mJ - Single-pulse avalanche energy; supports robustness against inductive kickback in relay/motor drive circuits.
T_J max	+175 °C - Maximum junction temperature; allows operation in sealed enclosures or high-ambient industrial environments.

Pinout & Package

IRF9Z10PBF-BE3 uses the industry-standard TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 3.5 °C/W) and mechanical compatibility with universal heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink.
Gate	Control input for channel conduction	High-impedance MOS gate; driven by negative voltage relative to source; 12 nC charge must be fully sourced/sunk.
Source	Reference node for gate drive and current return	Common connection point for load return path and gate drive reference; defines V_GS bias point.

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports repeated inductive turn-off events up to I_AR = -6.7 A and E_AR = 4.3 mJ without degradation.
Dynamic dV/dt rating	Rated -4.5 V/ns peak di/dt immunity; prevents false turn-on during high-speed voltage transients in noisy environments.
Fast switching	Turn-on delay 11 ns, rise time 63 ns, fall time 31 ns - enables >500 kHz PWM operation with minimal overlap loss.
175 °C operation	Enables full-rated performance in sealed industrial enclosures where ambient exceeds 85 °C.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709A; no brominated flame retardants or chlorine-based compounds.

Applications

Industrial DC-DC Converters	High-Side Load Switches
Use Scenario: Synchronous rectification in isolated 24 V input to 5/12 V output flyback or forward converters. IC Role / Device Role / Timing Role: High-side P-channel MOSFET replacing Schottky diode to reduce conduction losses and improve efficiency above 75% load. Use Value: Achieves 2–3% efficiency gain over diode rectification at 5 A output due to 0.50 Ω R_DS(on) vs. 0.4 V forward drop.	Use Scenario: Controlled power-up sequencing for FPGA, DSP, or microcontroller core rails in programmable logic controllers. IC Role / Device Role / Timing Role: High-side switch enabling soft-start, inrush limiting, and fault isolation via gate-controlled turn-on. Use Value: Supports controlled ramp-up using RC gate network; withstands 175 °C junction temperature during sustained overload testing.
Motor Control H-Bridges	Telecom Power Distribution
Use Scenario: Upper-leg switching in 24 V brushed DC motor drivers for HVAC actuators and valve positioners. IC Role / Device Role / Timing Role: P-channel high-side switch paired with N-channel low-side devices; operated with complementary gate timing. Use Value: Avalanche rating (140 mJ) absorbs back-EMF spikes during abrupt motor stop; dV/dt immunity prevents shoot-through.	Use Scenario: Hot-swap and OR-ing function in redundant 48 V telecom rectifier modules feeding distributed power buses. IC Role / Device Role / Timing Role: High-side OR-ing FET providing reverse-current blocking and fault isolation between parallel power feeds. Use Value: Body diode V_SD = -5.5 V ensures low forward drop during redundancy switchover; TO-220AB package enables direct bolt-down thermal management.

Industrial DC-DC Converters

High-Side Load Switches

Use Scenario: Synchronous rectification in isolated 24 V input to 5/12 V output flyback or forward converters.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET replacing Schottky diode to reduce conduction losses and improve efficiency above 75% load.

Use Value: Achieves 2–3% efficiency gain over diode rectification at 5 A output due to 0.50 Ω R_DS(on) vs. 0.4 V forward drop.

Use Scenario: Controlled power-up sequencing for FPGA, DSP, or microcontroller core rails in programmable logic controllers.

IC Role / Device Role / Timing Role: High-side switch enabling soft-start, inrush limiting, and fault isolation via gate-controlled turn-on.

Use Value: Supports controlled ramp-up using RC gate network; withstands 175 °C junction temperature during sustained overload testing.

Motor Control H-Bridges

Telecom Power Distribution

Use Scenario: Upper-leg switching in 24 V brushed DC motor drivers for HVAC actuators and valve positioners.

IC Role / Device Role / Timing Role: P-channel high-side switch paired with N-channel low-side devices; operated with complementary gate timing.

Use Value: Avalanche rating (140 mJ) absorbs back-EMF spikes during abrupt motor stop; dV/dt immunity prevents shoot-through.

Use Scenario: Hot-swap and OR-ing function in redundant 48 V telecom rectifier modules feeding distributed power buses.

IC Role / Device Role / Timing Role: High-side OR-ing FET providing reverse-current blocking and fault isolation between parallel power feeds.

Use Value: Body diode V_SD = -5.5 V ensures low forward drop during redundancy switchover; TO-220AB package enables direct bolt-down thermal management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9Z24NPBF	V_DS = -55 V, R_DS(on) = 0.28 Ω @ -10 V, Q_g = 24 nC - lower R_DS(on) but higher gate charge and reduced voltage margin.	Better conduction efficiency below 40 V bus, but unsuitable for 48 V systems requiring 60 V rating.	Select when optimizing for lowest R_DS(on) in ≤40 V designs and gate drive strength permits higher Q_g.
IXTP10P10P	V_DS = -100 V, R_DS(on) = 1.0 Ω @ -10 V, Q_g = 10 nC - higher voltage rating but double R_DS(on) and same gate drive demand.	Required for 72 V battery systems or surge-prone industrial mains interfaces where 60 V margin is insufficient.	Select when system transient requirements exceed -60 V or long-term reliability demands wider voltage safety margin.

Compared with IRF9Z10PBF-BE3, IRF9Z24NPBF trades voltage headroom for lower conduction loss, while IXTP10P10P sacrifices on-resistance for extended blocking capability-making IRF9Z10PBF-BE3 the optimal balance for 48 V industrial power conversion where both efficiency and robustness are critical.

Availability

IRF9Z10PBF-BE3 is available at Aetrix Electronics and suitable for industrial DC-DC converters, high-side load switches, and motor control H-bridges requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRF9Z10PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and reliability across automotive, industrial, and computing markets.

The IRF9Z10PBF-BE3 belongs to Vishay's third-generation power MOSFET family, engineered for cost-effective, fast-switching, avalanche-rugged operation in commercial-industrial power conversion and load management applications.

FAQ

What is the maximum continuous drain current rating for IRF9Z10PBF-BE3 at 100 °C case temperature?

The IRF9Z10PBF-BE3 has a continuous drain current rating of -4.7 A at T_C = 100 °C, per the Absolute Maximum Ratings table. This reflects linear derating from -6.7 A at 25 °C using the specified 0.29 W/°C factor. Designers must verify heatsink performance to maintain case temperature within this limit during sustained operation.

Does IRF9Z10PBF-BE3 have a built-in body diode, and what are its key parameters?

Yes, IRF9Z10PBF-BE3 integrates a body diode with V_SD = -5.5 V at -6.7 A and reverse recovery time t_rr = 80–160 ns at T_J = 25 °C. The diode supports freewheeling in inductive loads, and its Q_rr of 0.096–0.19 μC informs snubber design and switching loss estimation in hard-commutated topologies.

Is IRF9Z10PBF-BE3 suitable for logic-level gate drive applications?

No, IRF9Z10PBF-BE3 is not a logic-level device. Its gate threshold voltage ranges from -2.0 V to -4.0 V, and it requires -10 V gate-source voltage to achieve rated R_DS(on) = 0.50 Ω. For true logic-level operation (e.g., 3.3 V or 5 V drive), a different part such as Si2301 or IRLML6344 would be required.

What is the thermal resistance from junction to case (R_thJC) for IRF9Z10PBF-BE3?

The IRF9Z10PBF-BE3 has a maximum junction-to-case thermal resistance (R_thJC) of 3.5 °C/W, measured from junction to the drain tab. This value is critical for heatsink sizing and must be used with the actual power dissipation to calculate worst-case junction temperature under steady-state conditions.

How does the avalanche rating of IRF9Z10PBF-BE3 impact circuit reliability?

The IRF9Z10PBF-BE3 is repetitively avalanche rated with I_AR = -6.7 A and E_AR = 4.3 mJ, meaning it can safely absorb multiple inductive energy spikes without parameter shift or failure. This eliminates need for external clamping in many motor and solenoid drive applications, improving board-level reliability and reducing BOM count.

IRF9Z10PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 6.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 500mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF9Z10PBF-BE3 FAQ

1.How can I place an order for IRF9Z10PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z10PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z10PBF-BE3 reliable?

The price and inventory of IRF9Z10PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z10PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRF9Z10PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z10PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z10PBF-BE3?

IRF9Z10PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z10PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z10PBF-BE3?

For technical support, including IRF9Z10PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z10PBF-BE3 requirements.

6.How does Aetrix verify that IRF9Z10PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRF9Z10PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z10PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRF9Z10PBF-BE3?

All IRF9Z10PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z10PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z10PBF-BE3 part is unused and in its original packaging.

Return procedure for IRF9Z10PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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