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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9Z14L

Name: IRF9Z14L
Brand: Vishay Siliconix
SKU: IRF9Z14L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z14L

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF9Z14L.pdf

Description:: MOSFET P-CH 60V 6.7A I2PAK

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Product details

Overview

IRF9Z14L from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in low-profile through-hole I2PAK (TO-262) package, rated for -60 V V_DS, 0.50 Ω R_DS(on) at V_GS = -10 V, and -6.7 A continuous drain current at T_C = 25 °C. It delivers fast switching, full avalanche ruggedness, and 175 °C junction operation-ideal for DC-DC converter high-side switches and motor control H-bridge upper-leg drivers.

For engineers reviewing the IRF9Z14L datasheet, IRF9Z14L pinout, IRF9Z14L application, or IRF9Z14L equivalent, key selection criteria include its -60 V blocking capability, low gate charge (12 nC), body diode recovery performance (t_rr = 80–160 ns), thermal resistance (R_thJC = 3.5 °C/W), and compatibility with standard through-hole PCB assembly for industrial power stages.

Technical Context

This device operates as a voltage-controlled unidirectional switch in high-side configurations, leveraging its negative threshold voltage (-2.0 to -4.0 V) and robust gate oxide to withstand ±20 V V_GS. Its fully avalanche-rated design supports unclamped inductive switching up to 140 mJ per pulse, enabling reliable operation in flyback and synchronous rectifier topologies without external snubbers.

The IRF9Z14L integrates a co-packaged body diode with V_SD = -5.5 V at -6.7 A and controlled reverse recovery (Q_rr = 96–190 nC), allowing use in freewheeling paths where diode conduction and turn-off dynamics directly impact efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum drain-source blocking voltage for high-side switch applications up to 48 V bus systems.
R_DS(on)	0.50 Ω @ V_GS = -10 V - Enables <1.5 W conduction loss at 6.7 A, suitable for thermally constrained PCB layouts.
Q_g	12 nC - Low total gate charge reduces driver power demand and enables >100 kHz switching in SMPS designs.
I_D (cont.)	-6.7 A @ T_C = 25 °C - Sustains rated load current with heatsink mounting; derates to -4.7 A at 100 °C case temperature.
E_AS	140 mJ - Single-pulse avalanche energy rating ensures survivability during inductive turn-off transients without clamping.
R_thJC	3.5 °C/W - Junction-to-case thermal resistance allows direct heatsink attachment for high-power dissipation in compact enclosures.
t_rr	80–160 ns - Body diode reverse recovery time impacts switching losses and EMI in hard-switched converters.

Pinout & Package

I2PAK (TO-262) low-profile through-hole package with isolated tab (drain-connected), 3-pin layout optimized for manual and wave-solder assembly. Thermal pad on backside provides mechanical stability and enhanced heat transfer to PCB copper pour or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal requiring -10 V for full enhancement; gate leakage ≤ ±100 nA ensures low standby power.
D	Drain	Main high-side power terminal; electrically connected to metal tab for thermal and electrical conduction to heatsink.
S	Source	Reference node for gate drive and load return path; forms integral body diode anode for freewheeling current.

Key Features

Feature	Design Value
P-channel enhancement mode	Enables high-side switching without level-shifting circuitry in 12–48 V systems.
Fully avalanche rated	Guarantees single-pulse survival under unclamped inductive switching stress up to 140 mJ.
175 °C operating temperature	Supports extended thermal margin in sealed enclosures or high ambient environments.
Low-profile through-hole	I2PAK (TO-262) footprint fits height-constrained industrial PCBs while retaining solder joint reliability.
Fast switching with 11 ns t_d(on)	Reduces transition losses in high-frequency DC-DC converters and motor gate drivers.

Applications

DC-DC Converter High-Side Switch	Motor Control H-Bridge Upper Leg
Use Scenario: Step-down buck converter in industrial PLC power supply, operating at 48 V input and 12 V output with 100 kHz switching frequency. IC Role / Device Role / Timing Role: High-side P-channel MOSFET providing synchronous rectification and regulated output voltage via PWM duty cycle control. Use Value: Low R_DS(on) minimizes conduction loss; fast t_d(on)/t_f reduces switching loss; avalanche rating prevents failure during load dump events.	Use Scenario: Bidirectional 24 V brushed DC motor driver in automated valve actuator, requiring precise direction and braking control. IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge topology, conducting current during forward drive and enabling regenerative braking via body diode conduction. Use Value: Controlled t_rr and Q_rr limit voltage spikes during commutation; -60 V rating accommodates back-EMF surges up to 40 V.
Hot-Swap OR-ing Controller	Power Supply Sequencing Switch
Use Scenario: Redundant 28 V aircraft subsystem power distribution board requiring inrush-limited hot insertion of backup modules. IC Role / Device Role / Timing Role: P-channel MOSFET used as ideal diode replacement in OR-ing configuration, controlled by external gate driver to manage turn-on slew rate. Use Value: Low Q_g enables precise gate voltage ramp control; 175 °C rating ensures reliability under sustained fault conditions.	Use Scenario: Multi-rail embedded system (3.3 V, 5 V, 12 V) requiring controlled power-up sequence to prevent latch-up in FPGAs and microcontrollers. IC Role / Device Role / Timing Role: Delayed-enable high-side switch isolating downstream rails until master controller asserts gate signal after primary rail stabilization. Use Value: Robust V_GS rating (±20 V) tolerates sequencing timing jitter; low IDSS (<100 μA) prevents leakage-induced premature activation.

DC-DC Converter High-Side Switch

Motor Control H-Bridge Upper Leg

Use Scenario: Step-down buck converter in industrial PLC power supply, operating at 48 V input and 12 V output with 100 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET providing synchronous rectification and regulated output voltage via PWM duty cycle control.

Use Value: Low R_DS(on) minimizes conduction loss; fast t_d(on)/t_f reduces switching loss; avalanche rating prevents failure during load dump events.

Use Scenario: Bidirectional 24 V brushed DC motor driver in automated valve actuator, requiring precise direction and braking control.

IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge topology, conducting current during forward drive and enabling regenerative braking via body diode conduction.

Use Value: Controlled t_rr and Q_rr limit voltage spikes during commutation; -60 V rating accommodates back-EMF surges up to 40 V.

Hot-Swap OR-ing Controller

Power Supply Sequencing Switch

Use Scenario: Redundant 28 V aircraft subsystem power distribution board requiring inrush-limited hot insertion of backup modules.

IC Role / Device Role / Timing Role: P-channel MOSFET used as ideal diode replacement in OR-ing configuration, controlled by external gate driver to manage turn-on slew rate.

Use Value: Low Q_g enables precise gate voltage ramp control; 175 °C rating ensures reliability under sustained fault conditions.

Use Scenario: Multi-rail embedded system (3.3 V, 5 V, 12 V) requiring controlled power-up sequence to prevent latch-up in FPGAs and microcontrollers.

IC Role / Device Role / Timing Role: Delayed-enable high-side switch isolating downstream rails until master controller asserts gate signal after primary rail stabilization.

Use Value: Robust V_GS rating (±20 V) tolerates sequencing timing jitter; low IDSS (<100 μA) prevents leakage-induced premature activation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9Z24L	V_DS = -55 V, R_DS(on) = 0.30 Ω @ -10 V, Q_g = 15 nC - lower voltage rating but lower on-resistance and higher gate charge.	Less suitable for 48 V bus systems due to reduced blocking margin; better for 24 V motor drives where lower conduction loss dominates.	Select IRF9Z24L only if system max V_DS stays below 45 V and thermal headroom permits higher gate drive power.
SiHF9Z14L-GE3	Same die and specs as IRF9Z14L, but lead (Pb)-free and halogen-free per JEDEC J-STD-609; identical R_DS(on), Q_g, and thermal performance.	No functional difference; required for RoHS-compliant production or export to EU/China markets.	Choose SiHF9Z14L-GE3 when environmental compliance is mandatory; otherwise IRF9Z14L remains valid for legacy or non-regulated programs.

Compared with IRF9Z14L, IRF9Z24L trades voltage margin for lower conduction loss in lower-bus applications, while SiHF9Z14L-GE3 offers identical electrical behavior with updated material compliance-neither is pin-compatible drop-in but both share identical I2PAK footprint and thermal interface.

Availability

IRF9Z14L is available at Aetrix Electronics and suitable for DC-DC converters, motor control H-bridges, and hot-swap OR-ing circuits requiring stable component supply across industrial, transportation, and embedded power systems.

Supply support for IRF9Z14L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The IRF9Z14L belongs to Vishay's third-generation power MOSFET family, engineered for high-efficiency, high-temperature operation in industrial power conversion and motor control systems.

FAQ

What is the maximum continuous drain current for IRF9Z14L at 100 °C case temperature?

The IRF9Z14L supports -4.7 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the I2PAK package and must be verified against actual PCB copper area, heatsinking, and ambient conditions. The IRF9Z14L datasheet specifies linear derating beyond 25 °C at 0.29 W/°C, confirming the -4.7 A value aligns with its 43 W P_D rating at 25 °C.

Does IRF9Z14L have a built-in body diode, and what are its key parameters?

Yes, the IRF9Z14L integrates a source-drain body diode inherent to its vertical P-channel MOSFET structure. Key parameters include V_SD = -5.5 V at -6.7 A and T_J = 25 °C, reverse recovery time t_rr = 80–160 ns, and reverse recovery charge Q_rr = 96–190 nC. These values are measured under standardized conditions (I_F = -6.7 A, dI/dt = 100 A/μs) and directly impact efficiency and EMI in freewheeling applications.

Can IRF9Z14L be driven directly by a 3.3 V microcontroller GPIO?

No, the IRF9Z14L cannot be fully enhanced by a 3.3 V gate drive. Its gate-threshold voltage V_GS(th) ranges from -2.0 V to -4.0 V, and R_DS(on) is specified at V_GS = -10 V. At 3.3 V, the effective V_GS would be +3.3 V (insufficient to turn on a P-channel device), and even with inverted logic, 3.3 V magnitude is too low to achieve low on-resistance. A dedicated gate driver or level-shifter generating ≥ -10 V is required for optimal IRF9Z14L performance.

What is the thermal resistance from junction to case (R_thJC) for IRF9Z14L, and how is it measured?

The IRF9Z14L has a maximum junction-to-case thermal resistance R_thJC of 3.5 °C/W, as stated in the Thermal Resistance Ratings table. This value is measured with the device mounted on a standard heatsink using industry-standard transient dual-interface methods, with thermal interface material applied between the drain tab and heatsink surface. It assumes direct metal-to-metal contact and does not include PCB conduction paths.

Is IRF9Z14L RoHS-compliant, and what are the lead-free alternatives?

The base IRF9Z14L part number is lead (Pb)-containing and therefore not RoHS-compliant. For RoHS and halogen-free requirements, Vishay offers the functionally identical SiHF9Z14L-GE3 variant, which uses lead-free terminations and complies with JEDEC J-STD-609. Both share identical electrical specs, package dimensions, and thermal performance-only material composition differs. Always verify compliance status via the official Vishay ordering matrix for your specific production lot.

IRF9Z14L Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 6.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

IRF9Z14L FAQ

1.How can I place an order for IRF9Z14L through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z14L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z14L reliable?

The price and inventory of IRF9Z14L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z14L is usually 5 days.

3.What payment methods are accepted for IRF9Z14L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z14L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z14L?

IRF9Z14L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z14L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z14L?

For technical support, including IRF9Z14L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z14L requirements.

6.How does Aetrix verify that IRF9Z14L is sourced from the original manufacturer or authorized distributors?

All IRF9Z14L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z14L meets industry standards.

7.What is the process for return or replacement of IRF9Z14L?

All IRF9Z14L units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z14L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z14L part is unused and in its original packaging.

Return procedure for IRF9Z14L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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