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Vishay Siliconix IRF9Z14PBF-BE3
- Part No.:
- IRF9Z14PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRF9Z14PBF-BE3.pdf
- Description:
- MOSFET P-CH 60V 6.7A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:1,317
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Product details
Overview
IRF9Z14PBF-BE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -60 V VDS, 0.50 Ω RDS(on) at VGS = -10 V, and -6.7 A continuous drain current at TC = 25 °C. It delivers fast switching, repetitive avalanche capability, and operates up to +175 °C junction temperature - ideal for DC-DC converter high-side switches and motor control H-bridge upper arms.
For engineers reviewing the IRF9Z14PBF-BE3 datasheet, IRF9Z14PBF-BE3 pinout, IRF9Z14PBF-BE3 application, or IRF9Z14PBF-BE3 equivalent, key selection criteria include verified -60 V blocking rating, confirmed 0.50 Ω on-resistance at -10 V gate drive, documented 12 nC total gate charge, validated -4.5 V/ns peak diode recovery dV/dt, and TO-220AB thermal performance with RthJC = 3.5 °C/W.
Technical Context
This device implements a third-generation silicon process optimized for ruggedness and low conduction loss in P-channel topology. Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard -10 V logic-level drive while maintaining noise immunity. The integrated body diode supports synchronous rectification and unclamped inductive switching with 140 mJ single-pulse avalanche energy rating.
Thermal design leverages the TO-220AB package's 3.5 °C/W junction-to-case resistance and flat mounting surface (RthCS = 0.50 °C/W with grease). Dynamic parameters - including 270 pF input capacitance, 31 pF reverse transfer capacitance, and 11 ns turn-on delay - are characterized at VDD = -30 V, ID = -6.7 A, and Rg = 24 Ω per JEDEC-standard test circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Maximum drain-source blocking voltage; defines safe operating range in high-side switch configurations |
| RDS(on) | 0.50 Ω @ VGS = -10 V - Conduction loss determines I²R heating in continuous operation at 6.7 A |
| Qg | 12 nC - Total gate charge sets minimum driver current requirement for 100 ns switching transitions |
| ID (cont.) | -6.7 A @ TC = 25 °C - Continuous current capability limited by package thermal resistance and PCB heatsinking |
| EAS | 140 mJ - Single-pulse avalanche energy rating enables robustness against inductive load turn-off transients |
| dV/dt (diode) | -4.5 V/ns - Peak diode recovery dV/dt rating constrains layout parasitics to avoid false turn-on during commutation |
| TJ max | +175 °C - Maximum junction temperature allows operation in sealed enclosures or high-ambient industrial environments |
Pinout & Package
IRF9Z14PBF-BE3 uses the industry-standard TO-220AB package with isolated tab (drain-connected), 3-pin vertical lead configuration, and 1.6 mm lead-to-case clearance. Mounting torque: 10 lbf·in (1.1 N·m) for 6-32 or M3 screw.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output terminal | Electrically connected to metal tab; requires insulating washer if mounted to grounded heatsink |
| Gate | Control electrode | High-impedance input requiring <100 nA leakage current handling; sensitive to ESD and layout-induced ringing |
| Source | Reference node for gate drive and current return | Common connection point for load return path and gate drive reference; defines VGS bias point |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports repeated inductive turn-off events up to -6.7 A and 4.3 mJ without degradation - eliminates need for external snubbers in relay/motor drivers |
| Dynamic dV/dt rating | Rated -4.5 V/ns during body diode recovery - enables reliable operation in high-dI/dt half-bridge topologies without false triggering |
| Fast switching | 11 ns turn-on delay + 63 ns rise time at VDD = -30 V - reduces switching losses in 100–500 kHz SMPS designs |
| Low RDS(on) × Qg figure-of-merit | 0.50 Ω × 12 nC = 6.0 Ω·nC - balances conduction and switching loss trade-offs for medium-frequency power stages |
| Pb-free and halogen-free (BE3) | Complies with RoHS Directive 2011/65/EU and JEDEC JS709B - qualified for automotive and industrial applications requiring green material compliance |
Applications
| DC-DC Converter High-Side Switch | H-Bridge Motor Control |
|---|---|
Use Scenario: 24 V input buck converter delivering 12 V/5 A to industrial sensors with tight thermal envelope. IC Role / Device Role / Timing Role: P-channel high-side switch controlling power delivery during PWM on-time; body diode conducts during off-time freewheeling. Use Value: 0.50 Ω RDS(on) limits conduction loss to <170 mW at full load; TO-220AB package dissipates heat without forced airflow. |
Use Scenario: Bidirectional 24 V brushed DC motor driver in automated valve actuator with stall protection. IC Role / Device Role / Timing Role: Upper-arm switch in dual half-bridge configuration; synchronized with complementary N-channel low-side devices. Use Value: Repetitive avalanche rating absorbs back-EMF spikes during sudden stop; -4.5 V/ns dV/dt tolerance prevents shoot-through during fast direction reversal. |
| Relay Replacement Circuit | Hot-Swap Power Controller |
Use Scenario: Solid-state replacement for 30 A electromechanical relay in PLC output module with 100,000-cycle lifetime requirement. IC Role / Device Role / Timing Role: Main power switch enabling zero-crossing turn-on and controlled turn-off via gate slew-rate limiting. Use Value: 140 mJ single-pulse avalanche energy withstands inductive kickback from solenoid loads; 175 °C rating ensures reliability under sustained overload. |
Use Scenario: Inrush current limiter for hot-pluggable 48 V telecom board with ±10% supply tolerance. IC Role / Device Role / Timing Role: Series pass element controlled by external linear regulator IC to ramp voltage over 10 ms. Use Value: Low gate charge (12 nC) enables precise analog gate biasing; -2.0 V to -4.0 V VGS(th) supports stable linear-mode operation without oscillation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9Z34NPBF | VDS = -55 V, RDS(on) = 0.28 Ω @ -10 V, Qg = 23 nC - lower on-resistance but higher gate charge and reduced voltage margin | Better conduction efficiency below 48 V systems; less suitable for 60 V bus designs or high-dV/dt environments | Select when prioritizing RDS(on) over voltage headroom and switching speed in 24–48 V applications |
| IXTP10P60P | VDS = -60 V, RDS(on) = 0.75 Ω @ -10 V, Qg = 16 nC - higher on-resistance but enhanced avalanche ruggedness (EAS = 220 mJ) | Superior fault tolerance in unclamped inductive loads; trade-off is 50% higher conduction loss at rated current | Prefer for mission-critical motor drives where transient overvoltage risk exceeds efficiency requirements |
Compared with IRF9Z14PBF-BE3, IRF9Z34NPBF offers lower conduction loss but sacrifices voltage margin and increases switching drive demand, while IXTP10P60P trades higher RDS(on) for significantly improved avalanche energy handling - making IRF9Z14PBF-BE3 the balanced choice for general-purpose 60 V P-channel switching where thermal, dynamic, and ruggedness constraints are co-optimized.
Availability
IRF9Z14PBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, H-bridge motor controllers, and relay-replacement circuits requiring stable component supply across industrial automation, building controls, and embedded power systems.
Supply support for IRF9Z14PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and reliability for industrial and automotive markets.
The IRF9Z14PBF-BE3 belongs to Vishay's third-generation power MOSFET family engineered for optimal balance of low RDS(on), fast switching, and avalanche robustness in commercial-industrial power conversion and motor control.
FAQ
What is the maximum continuous drain current rating for IRF9Z14PBF-BE3 at 100 °C case temperature?
The IRF9Z14PBF-BE3 supports -4.7 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied when ambient or heatsink conditions elevate case temperature beyond 25 °C. Designers should verify junction temperature using RthJC = 3.5 °C/W and actual power dissipation.
Does IRF9Z14PBF-BE3 have a fully rated avalanche capability, and how is it tested?
Yes, IRF9Z14PBF-BE3 is repetitively avalanche rated with IAR = -6.7 A and EAR = 4.3 mJ per pulse, and single-pulse EAS = 140 mJ. Testing follows JEDEC standard conditions: VDD = -25 V, starting TJ = 25 °C, L = 3.6 mH, Rg = 25 Ω, and IAS = -6.7 A. These ratings are validated per Figure 12 in the official datasheet (S21-0867-Rev. C).
What is the gate threshold voltage range for IRF9Z14PBF-BE3, and why does it matter for drive circuit design?
The IRF9Z14PBF-BE3 has a gate threshold voltage range of -2.0 V to -4.0 V at ID = -250 μA. This wide VGS(th) span means gate drive must exceed -4.0 V to ensure consistent turn-on across temperature and unit variation. For reliable enhancement-mode operation, -10 V gate drive is recommended - ensuring full enhancement while maintaining noise margin above the upper threshold limit.
Can IRF9Z14PBF-BE3 be used in linear mode (ohmic region), and what limits its safe operating area?
IRF9Z14PBF-BE3 can operate in linear mode, but its Safe Operating Area (SOA) is constrained by both thermal and secondary breakdown limits. At DC operation, the maximum VDS drops rapidly with increasing ID - e.g., only ~10 V at 2 A - due to RDS(on) self-heating and thermal runaway risk. SOA curves in Figure 8 of the datasheet define hard boundaries; operation must stay left of the RDS(on)-limited line and below the 43 W power limit.
What is the body diode forward voltage of IRF9Z14PBF-BE3, and how does it affect synchronous rectification?
The IRF9Z14PBF-BE3 body diode exhibits VSD = -5.5 V at IS = -6.7 A and TJ = 25 °C. This relatively high forward drop - compared to Schottky diodes - makes it unsuitable for high-efficiency synchronous rectification. Instead, the body diode serves primarily for freewheeling and fault clamping; external Schottky or MOSFET-based synchronous rectifiers are recommended where conduction loss reduction is critical.
IRF9Z14PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 500mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 270 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 43W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRF9Z14PBF-BE3 FAQ
1.How can I place an order for IRF9Z14PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9Z14PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9Z14PBF-BE3 reliable?
The price and inventory of IRF9Z14PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z14PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRF9Z14PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z14PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9Z14PBF-BE3?
IRF9Z14PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9Z14PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9Z14PBF-BE3?
For technical support, including IRF9Z14PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z14PBF-BE3 requirements.
6.How does Aetrix verify that IRF9Z14PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRF9Z14PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z14PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRF9Z14PBF-BE3?
All IRF9Z14PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z14PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9Z14PBF-BE3 part is unused and in its original packaging.
Return procedure for IRF9Z14PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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