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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9Z14S

Name: IRF9Z14S
Brand: Vishay Siliconix
SKU: IRF9Z14S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z14S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9Z14S.pdf

Description:: MOSFET P-CH 60V 6.7A D2PAK

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Product details

Overview

IRF9Z14S from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, rated for -60 V drain-source voltage, 0.50 Ω R_DS(on) at V_GS = -10 V, and continuous drain current of -6.7 A at T_C = 25 °C. It features fully avalanche-rated operation up to 140 mJ, 175 °C maximum junction temperature, and fast switching with 12 nC total gate charge - used in DC-DC synchronous buck converters and high-side load switches.

For engineers reviewing the IRF9Z14S datasheet, IRF9Z14S pinout, IRF9Z14S application, or IRF9Z14S equivalent, this page delivers verified package mapping, validated thermal and dynamic parameters, confirmed avalanche capability, and real-world design context for high-reliability power switching in industrial and automotive subsystems.

Technical Context

This device employs Vishay's third-generation silicon process to achieve low on-resistance per die area while maintaining ruggedness against repetitive avalanche stress. Its P-channel architecture enables high-side switching without level-shifting circuitry, and its D2PAK thermal design supports up to 43 W dissipation at T_C = 25 °C.

The IRF9Z14S integrates an intrinsic body diode with 80–160 ns reverse recovery time and 96–190 nC Q_rr, enabling use in freewheeling paths where controlled diode conduction is required. Gate drive compatibility is confirmed for -10 V standard logic-level drive, with V_GS(th) ranging from -2.0 V to -4.0 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage in high-side switch configurations
R_DS(on) @ V_GS = -10 V	0.50 Ω - Enables <1.5 W conduction loss at 6.7 A DC current
Q_g	12 nC - Determines gate driver power requirement and switching speed trade-off
I_D (continuous)	-6.7 A @ T_C = 25 °C - Supports medium-power loads with heatsink mounting
E_AS	140 mJ - Confirmed single-pulse avalanche energy rating for inductive load protection
T_J max	+175 °C - Allows operation in under-hood or enclosed industrial environments
R_thJC	3.5 °C/W - Enables thermal path modeling from junction to heatsink interface

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current PCB layout and heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab/Drain)	Drain (D)	Exposed metal tab - electrically connected to drain; primary thermal path to PCB copper pour or heatsink
Pin 2 (Source)	Source (S)	Source terminal - referenced ground node in high-side switch; carries full load current
Pin 3 (Gate)	Gate (G)	Control input - requires negative V_GS for turn-on; sensitive to ESD and ringing

Key Features

Feature	Design Value
Fully avalanche rated	140 mJ single-pulse E_AS - eliminates need for external snubbers in inductive switching
Low-profile surface-mount	D2PAK package - enables automated assembly and higher power density than through-hole alternatives
175 °C operating temperature	Extended thermal margin - supports operation in sealed enclosures without forced air cooling
Fast switching performance	11 ns t_d(on), 63 ns t_r, 10 ns t_d(off), 31 ns t_f - reduces switching losses in 100–500 kHz SMPS designs
Body diode with low Q_rr	96–190 nC reverse recovery charge - minimizes diode-induced shoot-through risk in synchronous rectification

Applications

Industrial Motor Control	Automotive Body Electronics
Use Scenario: High-side power switch for 12 V/24 V brushed DC motor drivers in HVAC actuators and seat positioners. IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled power delivery and overcurrent protection via integrated avalanche ruggedness. Use Value: Eliminates need for external flyback diodes and simplifies gate drive by avoiding level shifters in 12 V systems.	Use Scenario: Load switch for lighting modules and interior control units requiring hot-swap capability and short-circuit robustness. IC Role / Device Role / Timing Role: High-side switch managing power sequencing and fault isolation in LIN-bus subsystems. Use Value: 175 °C rating ensures reliability during prolonged engine-off battery drain conditions and thermal cycling.
DC-DC Synchronous Buck Converter	Power Distribution Unit (PDU)
Use Scenario: High-side switch in non-isolated 48 V-to-12 V buck converter for telecom and server auxiliary rails. IC Role / Device Role / Timing Role: Main switching element handling peak currents up to -27 A pulsed drain current. Use Value: Low R_DS(on) and fast switching reduce conduction and transition losses, improving efficiency above 92 % at 5 A load.	Use Scenario: Redundant power path controller in industrial PDUs managing dual-input 24 V supplies. IC Role / Device Role / Timing Role: OR-ing FET enabling seamless source switchover with minimal forward voltage drop. Use Value: Body diode V_SD ≤ -5.5 V at -6.7 A allows efficient passive OR-ing before active control engagement.

Industrial Motor Control

Automotive Body Electronics

Use Scenario: High-side power switch for 12 V/24 V brushed DC motor drivers in HVAC actuators and seat positioners.

IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled power delivery and overcurrent protection via integrated avalanche ruggedness.

Use Value: Eliminates need for external flyback diodes and simplifies gate drive by avoiding level shifters in 12 V systems.

Use Scenario: Load switch for lighting modules and interior control units requiring hot-swap capability and short-circuit robustness.

IC Role / Device Role / Timing Role: High-side switch managing power sequencing and fault isolation in LIN-bus subsystems.

Use Value: 175 °C rating ensures reliability during prolonged engine-off battery drain conditions and thermal cycling.

DC-DC Synchronous Buck Converter

Power Distribution Unit (PDU)

Use Scenario: High-side switch in non-isolated 48 V-to-12 V buck converter for telecom and server auxiliary rails.

IC Role / Device Role / Timing Role: Main switching element handling peak currents up to -27 A pulsed drain current.

Use Value: Low R_DS(on) and fast switching reduce conduction and transition losses, improving efficiency above 92 % at 5 A load.

Use Scenario: Redundant power path controller in industrial PDUs managing dual-input 24 V supplies.

IC Role / Device Role / Timing Role: OR-ing FET enabling seamless source switchover with minimal forward voltage drop.

Use Value: Body diode V_SD ≤ -5.5 V at -6.7 A allows efficient passive OR-ing before active control engagement.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHF9Z14S-GE3	Same silicon die and D2PAK package; RoHS-compliant, halogen-free construction; identical R_DS(on), Q_g, and avalanche rating	No functional difference; selected when lead-free/halogen-free compliance is mandatory per IPC/JEDEC standards	Drop-in replacement for IRF9Z14S where environmental compliance drives BOM change
IRF9Z34N	Higher R_DS(on) (0.60 Ω), lower V_DS (-55 V), same D2PAK package; not avalanche rated per datasheet	Limited to non-inductive or low-energy switching; unsuitable for unclamped inductive loads	Consider only for cost-sensitive, low-stress linear or low-frequency switching where avalanche immunity is not required

Compared with IRF9Z14S, SiHF9Z14S-GE3 offers identical electrical and thermal performance with enhanced environmental compliance, while IRF9Z34N trades ruggedness and on-resistance for lower cost in benign switching environments - making IRF9Z14S the optimal choice for thermally demanding, inductively loaded applications.

Availability

IRF9Z14S is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, and DC-DC synchronous buck converter designs requiring stable component supply across extended temperature and high-reliability operational profiles.

Supply support for IRF9Z14S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF9Z14S belongs to Vishay's third-generation power MOSFET family designed specifically for high-efficiency, high-ruggedness switching in surface-mount power conversion and load management applications.

FAQ

What is the maximum continuous drain current for IRF9Z14S at 100 °C case temperature?

The IRF9Z14S supports -4.7 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be applied when ambient or heatsink conditions prevent maintaining T_C ≤ 25 °C. Designers should verify junction temperature using R_thJC = 3.5 °C/W and actual power dissipation.

Does IRF9Z14S require a gate driver IC for standard operation?

The IRF9Z14S can be driven directly by microcontroller GPIOs capable of sourcing/sinking ≥10 mA and delivering -10 V logic levels, but a dedicated gate driver is recommended for high-frequency (>100 kHz) or high-current (>3 A) applications. Its 12 nC total gate charge and -2.0 V to -4.0 V threshold voltage make it compatible with standard logic-level P-channel drivers, though undershoot protection is advised due to ±20 V V_GS limit.

Is IRF9Z14S suitable for synchronous rectification in buck converters?

Yes, the IRF9Z14S is suitable for synchronous rectification in low-to-mid frequency buck converters due to its low R_DS(on) (0.50 Ω), fast switching times (t_r = 63 ns, t_f = 31 ns), and body diode characteristics (V_SD ≤ -5.5 V, Q_rr = 96–190 nC). However, its P-channel topology requires complementary high-side gate timing control and is typically used in high-side synchronous configurations rather than low-side.

What is the avalanche energy rating of IRF9Z14S, and how is it tested?

The IRF9Z14S is rated for 140 mJ single-pulse avalanche energy (E_AS) under test condition: V_DD = -25 V, starting T_J = 25 °C, L = 3.6 mH, R_g = 25 Ω, I_AS = -6.7 A. This rating is confirmed per JEDEC JESD24-11 and enables reliable operation in unclamped inductive switching events without external protection components.

How does the D2PAK package of IRF9Z14S compare thermally to TO-220?

The D2PAK package of IRF9Z14S provides lower thermal resistance (R_thJC = 3.5 °C/W) than standard TO-220 packages (typically ~4.5–6.0 °C/W), enabling higher power dissipation in surface-mount layouts. Its exposed drain tab allows direct thermal coupling to large PCB copper areas or heatsinks, supporting up to 43 W at T_C = 25 °C - exceeding typical TO-220 limits in space-constrained designs.

IRF9Z14S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 6.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9Z14S FAQ

1.How can I place an order for IRF9Z14S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z14S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z14S reliable?

The price and inventory of IRF9Z14S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z14S is usually 5 days.

3.What payment methods are accepted for IRF9Z14S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z14S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z14S?

IRF9Z14S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z14S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z14S?

For technical support, including IRF9Z14S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z14S requirements.

6.How does Aetrix verify that IRF9Z14S is sourced from the original manufacturer or authorized distributors?

All IRF9Z14S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z14S meets industry standards.

7.What is the process for return or replacement of IRF9Z14S?

All IRF9Z14S units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z14S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z14S part is unused and in its original packaging.

Return procedure for IRF9Z14S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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