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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9Z14SPBF

Name: IRF9Z14SPBF
Brand: Vishay Siliconix
SKU: IRF9Z14SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z14SPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9Z14SPBF.pdf

Description:: MOSFET P-CH 60V 6.7A D2PAK

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Product details

Overview

IRF9Z14SPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -60 V V_DS, 0.50 Ω R_DS(on) at V_GS = -10 V, 6.7 A continuous drain current at T_C = 25 °C, fully avalanche rated, and qualified for 175 °C operation - used in high-side switching, DC-DC converter synchronous rectification, and motor control H-bridge legs.

For engineers reviewing the IRF9Z14SPBF datasheet, IRF9Z14SPBF pinout, IRF9Z14SPBF application, or IRF9Z14SPBF equivalent, this page delivers verified electrical parameters, thermal performance data, validated D2PAK pin configuration, and real-world design context for high-reliability power switching in industrial and automotive subsystems.

Technical Context

This device employs Vishay's third-generation trench-gate process to achieve low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard -10 V gate drive and supports partial logic-level compatibility down to -5 V.

The integrated body diode exhibits 80–160 ns reverse recovery time and 96–190 nC Q_rr under specified conditions, enabling use in freewheeling paths where controlled diode conduction is required. Thermal resistance from junction-to-case is 3.5 °C/W, supporting high-power dissipation when mounted on copper-clad PCBs with thermal pad soldering.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage for high-side switch in 48 V systems or buck converter upper FET
R_DS(on)	0.50 Ω @ V_GS = -10 V - Enables ≤3.4 W conduction loss at 6.7 A, critical for thermal management
I_D (cont)	-6.7 A @ T_C = 25 °C - Sustains full load current without derating when heatsinked to case
E_AS	140 mJ - Withstands single-pulse inductive energy in motor drive or relay snubbing without failure
Q_g	12 nC - Determines gate driver power requirement and switching speed in PWM applications
T_J Range	-55 to +175 °C - Supports operation in under-hood automotive or industrial ambient environments
R_thJC	3.5 °C/W - Enables precise junction temperature estimation using measured case temperature

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain thermal pad on underside; requires minimum 0.635" × 0.420" copper pad per Vishay AN826 for optimal thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal (P-channel)	Reference node for gate drive; connects to system ground or low-side rail in high-side configuration
2 (Gate)	Control input	Accepts negative voltage relative to source to turn on; threshold -2.0 to -4.0 V
3 (Drain)	Main power output	High-current path to load; electrically and thermally connected to exposed metal tab

Key Features

Feature	Design Value
Fully avalanche rated	Guarantees survivability under unclamped inductive switching up to 140 mJ without derating
175 °C operating temperature	Enables deployment in sealed enclosures or near heat sources without thermal shutdown risk
Low-profile surface-mount (D2PAK)	Reduces board height vs. through-hole alternatives while delivering 43 W power dissipation
Fast switching (t_r = 63 ns, t_f = 31 ns)	Minimizes transition losses in high-frequency DC-DC converters (>100 kHz)
Low Q_gd/Q_g ratio (0.425)	Improves Miller immunity and reduces risk of spurious turn-on during high dV/dt events

Applications

Motor Drive H-Bridge	Industrial DC-DC Converter
Use Scenario: Bidirectional 24–48 V brushed DC motor control with regenerative braking. IC Role / Device Role / Timing Role: High-side P-channel switch in H-bridge leg; handles reverse current during PWM off-time via body diode. Use Value: Avalanche rating absorbs inductive kickback; 175 °C rating sustains operation during stall conditions.	Use Scenario: Isolated 48 V to 12 V synchronous buck converter in PLC power supply. IC Role / Device Role / Timing Role: Upper switch in primary-side synchronous rectifier stage; driven by isolated gate driver. Use Value: 0.50 Ω R_DS(on) limits conduction loss to <1.5 W at full load; D2PAK thermal pad enables compact heatsinking.
Automotive Body Control Module	High-Side Load Switch
Use Scenario: Power distribution to headlights, HVAC actuators, or window lift motors in 12 V/24 V chassis. IC Role / Device Role / Timing Role: High-side switch with integrated current limiting and overtemperature protection (external circuitry). Use Value: -60 V rating provides margin against load dump transients; 175 °C operation accommodates under-dash mounting.	Use Scenario: Controlled power-up of FPGA, microcontroller, or sensor subsystems requiring inrush current limiting. IC Role / Device Role / Timing Role: Main power path switch; gate driven by microcontroller GPIO via level shifter. Use Value: Gate threshold allows direct interface with -5 V logic; fast turn-off (31 ns fall time) prevents bus contention during sequencing.

Motor Drive H-Bridge

Industrial DC-DC Converter

Use Scenario: Bidirectional 24–48 V brushed DC motor control with regenerative braking.

IC Role / Device Role / Timing Role: High-side P-channel switch in H-bridge leg; handles reverse current during PWM off-time via body diode.

Use Value: Avalanche rating absorbs inductive kickback; 175 °C rating sustains operation during stall conditions.

Use Scenario: Isolated 48 V to 12 V synchronous buck converter in PLC power supply.

IC Role / Device Role / Timing Role: Upper switch in primary-side synchronous rectifier stage; driven by isolated gate driver.

Use Value: 0.50 Ω R_DS(on) limits conduction loss to <1.5 W at full load; D2PAK thermal pad enables compact heatsinking.

Automotive Body Control Module

High-Side Load Switch

Use Scenario: Power distribution to headlights, HVAC actuators, or window lift motors in 12 V/24 V chassis.

IC Role / Device Role / Timing Role: High-side switch with integrated current limiting and overtemperature protection (external circuitry).

Use Value: -60 V rating provides margin against load dump transients; 175 °C operation accommodates under-dash mounting.

Use Scenario: Controlled power-up of FPGA, microcontroller, or sensor subsystems requiring inrush current limiting.

IC Role / Device Role / Timing Role: Main power path switch; gate driven by microcontroller GPIO via level shifter.

Use Value: Gate threshold allows direct interface with -5 V logic; fast turn-off (31 ns fall time) prevents bus contention during sequencing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHF9Z14S-GE3	Same silicon die, lead (Pb)-free and halogen-free; identical R_DS(on), Q_g, and avalanche rating	No functional difference; selected where RoHS compliance is mandatory	Drop-in replacement if Pb-free compliance is required; same D2PAK footprint and thermal behavior
IRF9Z24NPBF	Higher R_DS(on) (0.27 Ω), higher I_D (11 A), same V_DS (-60 V), TO-220 package	Requires through-hole layout change and larger heatsink; better for higher-current, lower-frequency apps	Choose when higher current capacity is needed and surface-mount constraint is relaxed

Compared with IRF9Z14SPBF, SiHF9Z14S-GE3 offers identical electrical and thermal performance with environmental compliance, while IRF9Z24NPBF trades D2PAK compactness for higher current handling in TO-220 - making IRF9Z14SPBF optimal for space-constrained, medium-current, high-reliability surface-mount designs.

Availability

IRF9Z14SPBF is available at Aetrix Electronics and suitable for motor drives, industrial DC-DC converters, and automotive body control modules requiring stable component supply across extended production lifecycles.

Supply support for IRF9Z14SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF9Z14SPBF belongs to Vishay's third-generation power MOSFET family engineered for low R_DS(on), robust avalanche performance, and high-temperature operation in demanding power conversion and switching applications.

FAQ

What is the maximum continuous drain current for IRF9Z14SPBF at 100 °C case temperature?

The IRF9Z14SPBF supports -4.7 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be applied when heatsinking cannot maintain T_C ≤ 25 °C. Designers should verify junction temperature using R_thJC = 3.5 °C/W and actual power dissipation.

Does IRF9Z14SPBF have a built-in body diode, and what are its key parameters?

Yes, IRF9Z14SPBF integrates a P-channel body diode with typical forward voltage of -5.5 V at -6.7 A and 25 °C, reverse recovery time of 80–160 ns, and reverse recovery charge of 96–190 nC. These values are measured under standardized conditions (T_J = 25 °C, I_F = -6.7 A, dI/dt = 100 A/μs) and enable use in freewheeling and synchronous rectification roles.

Can IRF9Z14SPBF be driven directly from a 3.3 V microcontroller GPIO?

No - IRF9Z14SPBF has a gate threshold voltage range of -2.0 V to -4.0 V and requires a negative gate-source voltage for turn-on. A 3.3 V GPIO cannot produce the necessary -5 V to -10 V swing. A level-shifting gate driver or charge pump circuit is required to generate sufficient negative gate drive relative to the source node.

What is the avalanche energy rating of IRF9Z14SPBF, and how is it tested?

The IRF9Z14SPBF is rated for 140 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = -25 V, starting T_J = 25 °C, L = 3.6 mH, R_g = 25 Ω, and I_AS = -6.7 A. This rating confirms ruggedness against inductive switching stress and is validated per JEDEC JESD24-1, not just theoretical calculation.

Is the D2PAK package of IRF9Z14SPBF compatible with standard reflow soldering profiles?

Yes - IRF9Z14SPBF's D2PAK package is qualified for lead-free reflow per IPC/JEDEC J-STD-020. Peak temperature must not exceed 260 °C for ≤10 s, and thermal pad soldering is recommended using Vishay's AN826 pad layout (0.635" × 0.420") to ensure mechanical reliability and optimal thermal transfer to the PCB.

IRF9Z14SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 6.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9Z14SPBF FAQ

1.How can I place an order for IRF9Z14SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z14SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z14SPBF reliable?

The price and inventory of IRF9Z14SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z14SPBF is usually 5 days.

3.What payment methods are accepted for IRF9Z14SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z14SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z14SPBF?

IRF9Z14SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z14SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z14SPBF?

For technical support, including IRF9Z14SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z14SPBF requirements.

6.How does Aetrix verify that IRF9Z14SPBF is sourced from the original manufacturer or authorized distributors?

All IRF9Z14SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z14SPBF meets industry standards.

7.What is the process for return or replacement of IRF9Z14SPBF?

All IRF9Z14SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z14SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z14SPBF part is unused and in its original packaging.

Return procedure for IRF9Z14SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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