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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9Z14STRLPBF

Name: IRF9Z14STRLPBF
Brand: Vishay Siliconix
SKU: IRF9Z14STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z14STRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9Z14STRLPBF.pdf

Description:: MOSFET P-CH 60V 6.7A D2PAK

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Product details

Overview

IRF9Z14STRLPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, rated for -60 V V_DS, 0.50 Ω R_DS(on) at V_GS = -10 V, 6.7 A continuous drain current at T_C = 25 °C, and fully avalanche-rated for robust switching in DC-DC converters and motor control circuits.

For engineers reviewing the IRF9Z14STRLPBF datasheet, IRF9Z14STRLPBF pinout, IRF9Z14STRLPBF application, or IRF9Z14STRLPBF equivalent, key selection criteria include its -60 V blocking capability, low on-resistance at standard gate drive, 175 °C junction rating, fast switching performance (11 ns turn-on delay, 31 ns fall time), and D2PAK thermal performance enabling high-current operation without through-hole mounting.

Technical Context

This device employs Vishay's third-generation silicon process to achieve optimized on-resistance-to-die-area ratio while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-off under logic-level and standard -10 V gate drive conditions.

The IRF9Z14STRLPBF integrates a co-packaged body diode with 80–160 ns reverse recovery time and 96–190 nC Q_rr, supporting synchronous rectification and freewheeling in buck converters and H-bridge topologies where controlled diode conduction is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum drain-source blocking voltage; supports 48 V bus systems with margin.
R_DS(on)	0.50 Ω @ V_GS = -10 V - Enables <1.5 W conduction loss at 6.7 A, critical for thermally constrained SMT designs.
I_D (continuous)	-6.7 A @ T_C = 25 °C - Specifies maximum steady-state current with heatsink; derates to -4.7 A at 100 °C case temperature.
Q_g	12 nC - Total gate charge determines driver strength requirement; enables efficient 100 kHz+ switching with moderate gate drivers.
E_AS	140 mJ - Single-pulse avalanche energy rating confirms ruggedness in inductive load switching without external snubbers.
T_J max	+175 °C - Extended junction temperature allows operation in high-ambient industrial environments without derating.
C_iss	270 pF - Input capacitance impacts gate drive loop stability and EMI behavior in hard-switched topologies.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration (G-S-D) with drain connected to the large back-side metal pad.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives negative gate-source voltage to turn on; requires -10 V for full R_DS(on) specification; threshold range (-2.0 to -4.0 V) supports partial turn-on at -5 V logic drive.
S (Source)	Reference node	Common return path for load current; tied to system ground or floating rail; defines V_GS reference for gate drive.
D (Drain)	Power output terminal	Connected to high-side switch node or negative rail; electrically and thermally coupled to PCB copper pour via exposed tab; carries full load current and avalanche energy.

Key Features

Feature	Design Value
Fully avalanche-rated	140 mJ single-pulse E_AS validated per JEDEC JESD24-1; eliminates need for external clamping in relay driving and solenoid control.
175 °C operating junction temperature	Enables use in sealed enclosures or high-ambient automotive/industrial settings without forced air cooling.
Low-profile surface-mount (D2PAK)	Eliminates through-hole assembly; supports automated reflow; thermal pad delivers R_thJC = 3.5 °C/W to PCB heatsink area.
Fast switching with low Q_gd/Q_gs	5.1 nC Q_gd and 3.8 nC Q_gs yield low Miller ratio, reducing susceptibility to dv/dt-induced turn-on and improving hard-switching efficiency.
Body diode with controlled Q_rr	96–190 nC reverse recovery charge enables predictable freewheeling in synchronous buck and half-bridge configurations.

Applications

DC-DC Buck Converter	High-Side Load Switch
Use Scenario: Step-down regulation from -48 V input to -12 V output in telecom power supplies. IC Role / Device Role / Timing Role: High-side synchronous rectifier in dual-MOSFET buck stage, conducting during low-side FET off-time. Use Value: 0.50 Ω R_DS(on) minimizes conduction loss at 6.7 A load; 175 °C rating sustains operation under sustained full-load conditions.	Use Scenario: Controlled power-up sequencing for -24 V subsystems in factory automation controllers. IC Role / Device Role / Timing Role: P-channel high-side switch enabling ON/OFF control with logic-compatible gate drive referenced to system ground. Use Value: -4.0 V V_GS(th) max ensures full turn-off with 0 V gate; -60 V rating provides margin against load-dump transients.
H-Bridge Motor Driver	Reverse Polarity Protection
Use Scenario: Bidirectional 24 V brushed DC motor control in robotic actuators. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge pair; commutated with complementary low-side N-channel FET. Use Value: 140 mJ E_AS withstands inductive kickback during PWM dead-time; 80 ns t_rr limits shoot-through risk during body-diode conduction.	Use Scenario: Input protection for -12 V power modules subject to accidental reverse battery connection. IC Role / Device Role / Timing Role: Series pass element placed between input connector and downstream circuitry. Use Value: Low R_DS(on) adds <0.5 V drop at full load; fully rated avalanche capability absorbs reverse-energy surge without failure.

DC-DC Buck Converter

High-Side Load Switch

Use Scenario: Step-down regulation from -48 V input to -12 V output in telecom power supplies.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in dual-MOSFET buck stage, conducting during low-side FET off-time.

Use Value: 0.50 Ω R_DS(on) minimizes conduction loss at 6.7 A load; 175 °C rating sustains operation under sustained full-load conditions.

Use Scenario: Controlled power-up sequencing for -24 V subsystems in factory automation controllers.

IC Role / Device Role / Timing Role: P-channel high-side switch enabling ON/OFF control with logic-compatible gate drive referenced to system ground.

Use Value: -4.0 V V_GS(th) max ensures full turn-off with 0 V gate; -60 V rating provides margin against load-dump transients.

H-Bridge Motor Driver

Reverse Polarity Protection

Use Scenario: Bidirectional 24 V brushed DC motor control in robotic actuators.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge pair; commutated with complementary low-side N-channel FET.

Use Value: 140 mJ E_AS withstands inductive kickback during PWM dead-time; 80 ns t_rr limits shoot-through risk during body-diode conduction.

Use Scenario: Input protection for -12 V power modules subject to accidental reverse battery connection.

IC Role / Device Role / Timing Role: Series pass element placed between input connector and downstream circuitry.

Use Value: Low R_DS(on) adds <0.5 V drop at full load; fully rated avalanche capability absorbs reverse-energy surge without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHF9Z14STRL-GE3	Identical silicon die and D2PAK package; RoHS-compliant, halogen-free construction; same R_DS(on), Q_g, and avalanche rating.	No functional difference; suitable for new designs requiring lead-free/halogen-free compliance.	Select SiHF9Z14STRL-GE3 when RoHS/halogen-free certification is mandatory; IRF9Z14STRLPBF remains valid for legacy Pb-containing assembly processes.
IRF9Z34NPbF	Higher V_DS (-55 V vs. -60 V), higher R_DS(on) (0.55 Ω), lower I_D (-4.9 A), same D2PAK package and 175 °C rating.	Marginally lower blocking voltage and higher conduction loss limit use in 48 V systems near voltage limits or high-efficiency requirements.	Choose IRF9Z34NPbF only if inventory availability outweighs 10% R_DS(on) penalty and reduced avalanche margin; not recommended for new 48 V designs.

Compared with IRF9Z14STRLPBF, SiHF9Z14STRL-GE3 offers identical electrical performance with environmental compliance, while IRF9Z34NPbF trades off voltage headroom and efficiency for broader legacy availability-making the original IRF9Z14STRLPBF optimal for cost-sensitive, high-reliability 48 V industrial switching where Pb-free is not mandated.

Availability

IRF9Z14STRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, high-side load switches, and H-bridge motor drivers requiring stable component supply across production lifecycles.

Supply support for IRF9Z14STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF9Z14STRLPBF belongs to Vishay's third-generation power MOSFET family, engineered for high-current, surface-mount power conversion with emphasis on low R_DS(on), rugged avalanche performance, and thermal efficiency in compact D2PAK packaging.

FAQ

What is the maximum continuous drain current for IRF9Z14STRLPBF at 100 °C case temperature?

The IRF9Z14STRLPBF supports -4.7 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package; designers must ensure adequate PCB copper area and airflow to maintain case temperature within this limit during sustained operation. The IRF9Z14STRLPBF datasheet confirms this value under standard test conditions with 1"² FR-4 board mounting.

Does IRF9Z14STRLPBF have a built-in body diode, and what are its key parameters?

Yes, the IRF9Z14STRLPBF integrates a monolithic body diode with typical forward voltage of -5.5 V at -6.7 A and junction temperature of 25 °C. Its reverse recovery time ranges from 80 to 160 ns, and reverse recovery charge is 96–190 nC. These values are measured under standardized conditions (T_J = 25 °C, I_F = -6.7 A, dI/dt = 100 A/μs) and directly impact performance in freewheeling and synchronous rectification applications. The IRF9Z14STRLPBF body diode is fully characterized in the "Drain-Source Body Diode Characteristics" section of the datasheet.

Is IRF9Z14STRLPBF pin-compatible with IRF9Z14L or SiHF9Z14L?

No, IRF9Z14STRLPBF is not pin-compatible with IRF9Z14L or SiHF9Z14L. The IRF9Z14STRLPBF uses the D2PAK (TO-263) surface-mount package with three leads and an exposed drain tab, while IRF9Z14L and SiHF9Z14L use the I2PAK (TO-262) through-hole package with different lead spacing, body dimensions, and mounting geometry. Although both share identical silicon characteristics, their mechanical interfaces differ fundamentally; PCB layout and assembly processes are not interchangeable. The IRF9Z14STRLPBF datasheet explicitly separates these variants under distinct ordering information and package drawings.

What gate drive voltage is required to achieve the specified 0.50 Ω R_DS(on) for IRF9Z14STRLPBF?

The IRF9Z14STRLPBF achieves its specified 0.50 Ω R_DS(on) at V_GS = -10 V, with test condition ID = -4.0 A. Gate threshold voltage ranges from -2.0 V to -4.0 V, meaning the device begins conducting significantly below -10 V, but full enhancement requires the rated gate drive. Driving the IRF9Z14STRLPBF with less than -10 V (e.g., -5 V) increases R_DS(on) substantially-typical values exceed 1.2 Ω at -5 V-so -10 V is essential for low-loss operation. This requirement is documented in the "Static" section of the IRF9Z14STRLPBF specifications table.

Can IRF9Z14STRLPBF be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the IRF9Z14STRLPBF is fully avalanche-rated with a guaranteed single-pulse avalanche energy (E_AS) of 140 mJ, tested under V_DD = -25 V, starting T_J = 25 °C, L = 3.6 mH, R_g = 25 Ω, and I_AS = -6.7 A. This rating validates safe operation during unclamped inductive switching events such as relay coil de-energization or motor phase commutation. Repetitive avalanche energy is limited to 4.3 mJ per pulse. The IRF9Z14STRLPBF datasheet includes detailed test circuit diagrams (Fig. 12a–c) and thermal constraints for reliable avalanche use.

IRF9Z14STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 6.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9Z14STRLPBF FAQ

1.How can I place an order for IRF9Z14STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z14STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z14STRLPBF reliable?

The price and inventory of IRF9Z14STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z14STRLPBF is usually 5 days.

3.What payment methods are accepted for IRF9Z14STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z14STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z14STRLPBF?

IRF9Z14STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z14STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z14STRLPBF?

For technical support, including IRF9Z14STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z14STRLPBF requirements.

6.How does Aetrix verify that IRF9Z14STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF9Z14STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z14STRLPBF meets industry standards.

7.What is the process for return or replacement of IRF9Z14STRLPBF?

All IRF9Z14STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z14STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z14STRLPBF part is unused and in its original packaging.

Return procedure for IRF9Z14STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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