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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9Z20

Name: IRF9Z20
Brand: Vishay Siliconix
SKU: IRF9Z20
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z20

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF9Z20.pdf

Description:: MOSFET P-CH 50V 9.7A TO220AB

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Product details

Overview

IRF9Z20 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -50 V V_DS, 0.28 Ω R_DS(on) at V_GS = -10 V, and -9.7 A continuous drain current at T_C = 25 °C. It serves as a high-side or reverse-polarity switching device in DC-DC converters, motor control H-bridges, and load-switching circuits requiring rugged, temperature-stable conduction.

For engineers reviewing the IRF9Z20 datasheet, IRF9Z20 pinout, IRF9Z20 application, or IRF9Z20 equivalent, this page delivers verified electrical parameters, thermal resistance values, gate charge characteristics, body diode performance metrics, and real-world design context for industrial power stage implementation.

Technical Context

This P-channel MOSFET uses planar vertical DMOS technology with optimized cell geometry to achieve low on-resistance while maintaining high transconductance (3.5 S typical) and robust avalanche capability (2.2 A unclamped inductive current). Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard logic-level drive in negative-rail configurations.

The device features fast switching dynamics (t_d(on) = 12 ns max, t_f = 38 ns max), low total gate charge (26 nC max), and integrated source-drain body diode with 56–280 ns reverse recovery time - enabling efficient operation in synchronous rectification and PWM-driven inductive loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-50 V - Maximum reverse drain-source blocking voltage; defines safe operating range in high-side switch or reverse-battery protection circuits.
R_DS(on)	0.28 Ω @ V_GS = -10 V - On-state resistance directly determines conduction loss and junction temperature rise under load.
I_D (continuous)	-9.7 A @ T_C = 25 °C - Continuous current rating at heatsink-mounted case temperature; derates linearly to -6.1 A at 100 °C.
Q_g	26 nC max - Total gate charge required for full turn-on; impacts driver sizing and switching loss in high-frequency applications.
V_GS(th)	-2.0 to -4.0 V - Gate threshold voltage range; ensures predictable turn-on behavior across temperature and process variation.
t_r/t_f	57–86 ns / 25–38 ns - Rise/fall times measured at V_DD = -25 V, I_D = -9.7 A, R_g = 18 Ω; critical for EMI control and dead-time optimization.
R_thJC	3.1 °C/W max - Junction-to-case thermal resistance; enables accurate thermal modeling when mounted to heatsink with greased interface.

Pinout & Package

IRF9Z20 is housed in a through-hole TO-220AB package with standard three-terminal layout: Drain (D) connected to tab, Source (S) and Gate (G) on leads. The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless circuit topology requires common-drain configuration.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, tied to internal die substrate	Must be electrically isolated from heatsink unless used as common node; contributes to thermal path via case-to-sink interface.
Source	Reference node for gate drive and current return path	Serves as ground reference in high-side switch topologies; body diode anode is internally connected here.
Gate	Control electrode for channel formation	Requires low-impedance drive due to 26 nC Q_g; sensitive to ESD; V_GS must remain within ±20 V absolute maximum rating.

Key Features

Feature	Design Value
P-channel polarity	Enables high-side switching without level-shifting circuitry; simplifies reverse-polarity protection and complementary N/P half-bridge designs.
Low R_DS(on) × Q_g product	0.28 Ω × 26 nC = 7.28 Ω·nC - Balances conduction and switching losses for medium-frequency (<100 kHz) power conversion stages.
Robust body diode	110 ns typical t_rr, 0.34 μC Q_rr - Supports freewheeling in inductive loads and reduces need for external Schottky catch diodes.
Temperature-stable R_DS(on)	Normalized on-resistance remains ≤2.4× at 150 °C - Ensures predictable current handling across automotive and industrial ambient ranges.
Avalanche-rated	Rated for repetitive unclamped inductive switching (IL = -2.2 A); supports energy-absorbing capability in flyback and motor drive snubberless designs.

Applications

Motor Control H-Bridge	Reverse Polarity Protection
Use Scenario: Bidirectional DC motor drive using complementary P/N MOSFETs in half-bridge configuration. IC Role / Device Role / Timing Role: High-side P-channel switch controlling positive rail connection to motor winding; synchronized with low-side N-channel device. Use Value: Eliminates need for bootstrap or isolated gate drivers; leverages -4.0 V V_GS(th) margin for reliable turn-on even with V_CC droop during commutation.	Use Scenario: Input protection circuit preventing damage from accidental battery reversal in 12 V automotive modules. IC Role / Device Role / Timing Role: Series-connected P-channel MOSFET acting as active OR-ing switch; blocks reverse current when V_IN < 0 V. Use Value: Achieves <100 mΩ effective series resistance with 0.28 Ω R_DS(on) and minimal voltage drop; avoids power loss of passive diode solutions.
DC-DC Buck Converter	Audio Amplifier Output Stage
Use Scenario: Synchronous rectification in non-isolated buck regulator delivering 5–12 V at up to 8 A. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by controller's complementary output. Use Value: Reduces conduction loss by >40% vs. 40 V Schottky; enabled by fast t_f (38 ns max) and low Q_gd/Q_gs ratio (1.4).	Use Scenario: Class-AB output stage in mono audio amplifier driving 4 Ω or 8 Ω speakers. IC Role / Device Role / Timing Role: Complementary P-channel device paired with N-channel counterpart in push-pull topology; handles negative half-cycle. Use Value: Maintains linearity across temperature due to stable g_fs (3.5 S typ) and low thermal runaway risk; supports 9.7 A peak current for dynamic bass response.

Motor Control H-Bridge

Reverse Polarity Protection

Use Scenario: Bidirectional DC motor drive using complementary P/N MOSFETs in half-bridge configuration.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling positive rail connection to motor winding; synchronized with low-side N-channel device.

Use Value: Eliminates need for bootstrap or isolated gate drivers; leverages -4.0 V V_GS(th) margin for reliable turn-on even with V_CC droop during commutation.

Use Scenario: Input protection circuit preventing damage from accidental battery reversal in 12 V automotive modules.

IC Role / Device Role / Timing Role: Series-connected P-channel MOSFET acting as active OR-ing switch; blocks reverse current when V_IN < 0 V.

Use Value: Achieves <100 mΩ effective series resistance with 0.28 Ω R_DS(on) and minimal voltage drop; avoids power loss of passive diode solutions.

DC-DC Buck Converter

Audio Amplifier Output Stage

Use Scenario: Synchronous rectification in non-isolated buck regulator delivering 5–12 V at up to 8 A.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by controller's complementary output.

Use Value: Reduces conduction loss by >40% vs. 40 V Schottky; enabled by fast t_f (38 ns max) and low Q_gd/Q_gs ratio (1.4).

Use Scenario: Class-AB output stage in mono audio amplifier driving 4 Ω or 8 Ω speakers.

IC Role / Device Role / Timing Role: Complementary P-channel device paired with N-channel counterpart in push-pull topology; handles negative half-cycle.

Use Value: Maintains linearity across temperature due to stable g_fs (3.5 S typ) and low thermal runaway risk; supports 9.7 A peak current for dynamic bass response.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9Z22	V_DS = -60 V, R_DS(on) = 0.35 Ω @ -10 V, Q_g = 28 nC - higher voltage rating but higher on-resistance and gate charge.	Better suited for 24 V systems requiring extended blocking margin; less efficient in 12 V/50 V-limited designs.	Select IRF9Z22 only if system V_IN exceeds 40 V or transient overvoltage >50 V is expected.
SiHF9Z20	Identical electrical specs and TO-220AB package; Vishay dual-marking variant with same die and qualification - Pb-free, RoHS-compliant.	No functional difference; identical thermal, switching, and ruggedness performance.	SiHF9Z20 is direct form-fit-function replacement; use when lead-free compliance is mandatory per IPC/JEDEC standards.

Compared with IRF9Z20, IRF9Z22 trades higher voltage headroom for increased conduction loss and drive demand, while SiHF9Z20 offers identical performance with certified Pb-free construction - making it the preferred choice for new designs targeting RoHS compliance without redesign.

Availability

IRF9Z20 is available at Aetrix Electronics and suitable for motor control H-bridges, reverse polarity protection circuits, synchronous buck converters, and audio amplifier output stages requiring stable component supply and long-term industrial availability.

Supply support for IRF9Z20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and reliability across automotive, industrial, and computing markets.

The IRF9Z20 belongs to Vishay's legacy "IRF" power MOSFET family designed for cost-sensitive, medium-power switching applications where proven robustness, ease of paralleling, and temperature stability outweigh ultra-high-frequency requirements.

FAQ

What is the maximum continuous drain current rating for IRF9Z20 at 100 °C case temperature?

The IRF9Z20 supports -6.1 A continuous drain current at T_C = 100 °C, derived from its 0.32 W/°C linear derating factor applied to the 40 W maximum power dissipation at 25 °C. This value reflects real thermal limits under heatsink-mounted conditions and must be validated against actual board-level thermal resistance in the target application.

Does IRF9Z20 have avalanche capability, and how is it specified?

Yes, IRF9Z20 is rated for repetitive unclamped inductive switching with an avalanche current (I_L) of -2.2 A, tested under defined conditions (L = 100 μH, V_DD = -25 V, starting T_J = 25 °C). This capability is documented in the Absolute Maximum Ratings table and enables operation in flyback and motor drive circuits without external snubbers.

What is the gate threshold voltage range for IRF9Z20, and why does it matter for drive circuit design?

The IRF9Z20 has a V_GS(th) range of -2.0 V to -4.0 V, meaning the gate must be pulled at least 2 V below the source to initiate conduction. This wide range necessitates sufficient negative gate drive margin - e.g., -10 V - to ensure full enhancement across temperature and unit-to-unit variation, especially in high-side configurations where gate drive voltage is referenced to the switching node.

Can IRF9Z20 be paralleled with other MOSFETs, and what design considerations apply?

Yes, IRF9Z20 is explicitly designed for easy paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. To ensure balanced operation, use matched gate resistors (≤10 Ω), symmetrical PCB layout with equal trace lengths, and individual gate resistors to dampen oscillation - all confirmed in Vishay's application guidance for the IRF9Z20.

Is IRF9Z20 suitable for synchronous rectification in a 12 V input buck converter?

Yes, IRF9Z20 is suitable for low-side synchronous rectification in 12 V-input buck converters, delivering lower conduction loss than Schottky diodes thanks to its 0.28 Ω R_DS(on). Its 26 nC Q_g and 38 ns t_f support efficient operation up to ~100 kHz; however, gate drive must provide clean, low-impedance negative swing to avoid shoot-through in high-duty-cycle operation.

IRF9Z20 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 9.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF9Z20 FAQ

1.How can I place an order for IRF9Z20 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z20 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z20 reliable?

The price and inventory of IRF9Z20 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z20 is usually 5 days.

3.What payment methods are accepted for IRF9Z20?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z20 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z20?

IRF9Z20 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z20 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z20?

For technical support, including IRF9Z20 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z20 requirements.

6.How does Aetrix verify that IRF9Z20 is sourced from the original manufacturer or authorized distributors?

All IRF9Z20 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z20 meets industry standards.

7.What is the process for return or replacement of IRF9Z20?

All IRF9Z20 units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z20, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z20 part is unused and in its original packaging.

Return procedure for IRF9Z20:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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