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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9Z24PBF-BE3

Name: IRF9Z24PBF-BE3
Brand: Vishay Siliconix
SKU: IRF9Z24PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z24PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF9Z24PBF-BE3.pdf

Description:: MOSFET P-CH 60V 11A TO220AB

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Product details

Overview

IRF9Z24PBF-BE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -60 V V_DS, 0.28 Ω R_DS(on) at -10 V V_GS, and -11 A continuous drain current at T_C = 25 °C. It supports repetitive avalanche operation, fast switching, and operates up to +175 °C junction temperature - commonly used in DC-DC converter high-side switches and motor control H-bridge circuits.

For engineers reviewing the IRF9Z24PBF-BE3 datasheet, IRF9Z24PBF-BE3 pinout, IRF9Z24PBF-BE3 application, or IRF9Z24PBF-BE3 equivalent, key selection criteria include verified P-channel polarity, TO-220AB thermal performance (R_thJC = 2.5 °C/W), gate charge profile (Q_g = 19 nC), body diode recovery (t_rr = 100–200 ns), and RoHS/halogen-free compliance per ordering code BE3.

Technical Context

This device belongs to Vishay's third-generation power MOSFET family optimized for ruggedness and cost-effective switching. Its P-channel architecture enables high-side configuration without level-shifting circuitry, and its dynamic dV/dt rating (-4.5 V/ns) ensures robustness against voltage transients during commutation.

The MOSFET features a fully characterized body diode with V_SD = -6.3 V at -11 A and Q_rr = 0.32–0.64 μC, supporting synchronous rectification and inductive load management. Thermal design is facilitated by low R_thJC (2.5 °C/W) and validated mounting torque (1.1 N·m).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage for high-side switch applications up to 48 V bus systems
R_DS(on)	0.28 Ω @ V_GS = -10 V - Enables <1 W conduction loss at -11 A, suitable for medium-power switching
Q_g	19 nC - Determines gate drive power requirement and switching speed in hard-switched topologies
I_D (cont.)	-11 A @ T_C = 25 °C - Continuous current capability with derating to -7.7 A at 100 °C case temperature
E_AS	240 mJ - Single-pulse avalanche energy rating supports unclamped inductive turn-off reliability
t_r/t_f	68 ns / 29 ns - Fast transition times reduce switching losses in PWM frequencies up to ~100 kHz
T_J range	-55 to +175 °C - Extended thermal operating envelope for industrial and automotive under-hood environments

Pinout & Package

IRF9Z24PBF-BE3 uses the industry-standard TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 2.5 °C/W) and mechanical compatibility with standard heatsinks using M3/6-32 screws (1.1 N·m torque).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab; requires insulating washer if mounted to grounded heatsink
Gate	Control input for channel conduction	High-impedance MOS gate requiring ≤±20 V drive; threshold V_GS(th) = -2.0 to -4.0 V
Source	Reference node for gate drive and current return	Common connection point for load return path and gate drive reference in high-side configurations

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports reliable operation under unclamped inductive switching with I_AR = -11 A and E_AR = 6.0 mJ
Dynamic dV/dt rating	-4.5 V/ns - Confirmed immunity to false turn-on during high dv/dt transients in motor drives
Fast switching	td(on)/td(off) = 13/15 ns - Enables efficient operation in SMPS and Class-D audio amplifiers
Simple drive requirements	V_GS(th) range (-2.0 to -4.0 V) allows direct logic-level or microcontroller-compatible gate drive
RoHS/halogen-free	BE3 suffix confirms lead-free and halogen-free construction per JEDEC J-STD-609A Class 1

Applications

DC-DC Buck Converter High-Side Switch	H-Bridge Motor Driver (Upper Arm)
Use Scenario: 24 V input to 5 V/3 A output buck regulator in industrial PLC power supply. IC Role / Device Role / Timing Role: High-side P-channel MOSFET providing synchronous rectification and controlled on/off timing via PWM gate signal. Use Value: Low R_DS(on) (0.28 Ω) minimizes conduction loss; fast t_r/t_f reduces switching loss at 200 kHz operation.	Use Scenario: Bidirectional 12 V brushed DC motor control in automated valve actuator. IC Role / Device Role / Timing Role: Upper-arm switch in half-bridge leg, driven with complementary logic to avoid shoot-through. Use Value: Repetitive avalanche rating protects against inductive kickback during direction reversal; -175 °C T_J supports sealed enclosure operation.
LED Constant-Current Driver	Hot-Swap Controller (OR-ing FET)
Use Scenario: 48 V input LED string driver with analog dimming in outdoor signage. IC Role / Device Role / Timing Role: Series pass element regulating current through feedback-controlled gate voltage. Use Value: Tight V_GS(th) tolerance (-2.0 to -4.0 V) enables stable analog control; low Q_g eases linear-mode thermal management.	Use Scenario: Redundant 24 V power rail OR-ing in telecom shelf backplane. IC Role / Device Role / Timing Role: Reverse-polarity protection and seamless source switchover via gate-controlled conduction. Use Value: Body diode forward voltage (V_SD = -6.3 V) minimized by active conduction; fast turn-off prevents reverse current surge during fault.

DC-DC Buck Converter High-Side Switch

H-Bridge Motor Driver (Upper Arm)

Use Scenario: 24 V input to 5 V/3 A output buck regulator in industrial PLC power supply.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET providing synchronous rectification and controlled on/off timing via PWM gate signal.

Use Value: Low R_DS(on) (0.28 Ω) minimizes conduction loss; fast t_r/t_f reduces switching loss at 200 kHz operation.

Use Scenario: Bidirectional 12 V brushed DC motor control in automated valve actuator.

IC Role / Device Role / Timing Role: Upper-arm switch in half-bridge leg, driven with complementary logic to avoid shoot-through.

Use Value: Repetitive avalanche rating protects against inductive kickback during direction reversal; -175 °C T_J supports sealed enclosure operation.

LED Constant-Current Driver

Hot-Swap Controller (OR-ing FET)

Use Scenario: 48 V input LED string driver with analog dimming in outdoor signage.

IC Role / Device Role / Timing Role: Series pass element regulating current through feedback-controlled gate voltage.

Use Value: Tight V_GS(th) tolerance (-2.0 to -4.0 V) enables stable analog control; low Q_g eases linear-mode thermal management.

Use Scenario: Redundant 24 V power rail OR-ing in telecom shelf backplane.

IC Role / Device Role / Timing Role: Reverse-polarity protection and seamless source switchover via gate-controlled conduction.

Use Value: Body diode forward voltage (V_SD = -6.3 V) minimized by active conduction; fast turn-off prevents reverse current surge during fault.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9Z34NPBF	V_DS = -55 V, R_DS(on) = 0.20 Ω @ -10 V, Q_g = 22 nC - lower on-resistance but higher gate charge	Better conduction efficiency below 40 V, but increased drive power demand	Prefer when minimizing I²R loss dominates over gate drive complexity
DMG2305UVT-7	V_DS = -20 V, R_DS(on) = 0.045 Ω @ -4.5 V, SOT-23 package - logic-level, low-voltage, surface-mount alternative	Not suitable for >30 V systems; limited to low-power portable electronics	Select only for space-constrained, low-voltage (<20 V), low-current (<4.5 A) designs

Compared with IRF9Z24PBF-BE3, IRF9Z34NPBF offers lower conduction loss in 24–48 V systems but demands more gate drive energy, while DMG2305UVT-7 provides compact logic-level operation only in sub-20 V applications - neither is pin-compatible, and both require PCB layout revision.

Availability

IRF9Z24PBF-BE3 is available at Aetrix Electronics and suitable for industrial motor controls, DC-DC power supplies, LED drivers, and hot-swap circuits requiring stable component supply across extended temperature and high-reliability environments.

Supply support for IRF9Z24PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on ruggedness, precision, and long-term reliability.

The IRF9Z24PBF-BE3 belongs to Vishay's third-generation power MOSFET product line, engineered for cost-effective, high-efficiency switching in commercial and industrial power conversion systems where thermal robustness and avalanche capability are critical.

FAQ

What is the maximum junction temperature rating for IRF9Z24PBF-BE3?

The IRF9Z24PBF-BE3 has a specified operating junction temperature range of -55 °C to +175 °C. This rating is confirmed in the Absolute Maximum Ratings table and supported by thermal characterization data including R_thJC = 2.5 °C/W. The device maintains parameter stability across this full range, making IRF9Z24PBF-BE3 suitable for under-hood automotive and industrial environments where ambient temperatures exceed 100 °C.

Is IRF9Z24PBF-BE3 suitable for linear-mode operation?

Yes, IRF9Z24PBF-BE3 can be operated in the linear (ohmic) region, as evidenced by its SOA curve (Fig. 8) and specified safe operating area up to 10 ms pulses. Its low R_DS(on) tolerance and defined thermal resistance allow predictable power dissipation modeling. However, sustained linear operation requires careful heatsinking due to power density limitations - IRF9Z24PBF-BE3 is typically deployed in switching mode, but validated for short-duration analog control such as LED current regulation.

Does IRF9Z24PBF-BE3 have a built-in body diode, and what are its key parameters?

Yes, IRF9Z24PBF-BE3 integrates a parasitic body diode inherent to its vertical P-channel MOSFET structure. Key diode specifications include: continuous forward current I_S = -11 A, pulsed current I_SM = -44 A, forward voltage V_SD = -6.3 V at -11 A and 25 °C, reverse recovery time t_rr = 100–200 ns, and reverse recovery charge Q_rr = 0.32–0.64 μC. These values are measured under standardized conditions and directly impact performance in freewheeling and synchronous rectification applications.

What is the gate threshold voltage range for IRF9Z24PBF-BE3?

The gate-source threshold voltage V_GS(th) for IRF9Z24PBF-BE3 is specified as -2.0 V minimum to -4.0 V maximum at V_DS = V_GS and I_D = -250 μA. This range ensures reliable turn-on with standard -5 V or -10 V gate drive while maintaining noise immunity. The negative polarity confirms its P-channel nature, and the spread reflects process variation - design margin should assume worst-case -2.0 V for guaranteed conduction at light loads.

How does the BE3 suffix affect the environmental compliance of IRF9Z24PBF-BE3?

Per Vishay's ordering information, the BE3 suffix on IRF9Z24PBF-BE3 denotes lead (Pb)-free and halogen-free construction, compliant with JEDEC J-STD-609A Class 1 and RoHS Directive 2011/65/EU. This distinguishes it from the Pb-free-only IRF9Z24PbF variant. The BE3 version uses matte tin plating and halogen-free molding compound, enabling use in environmentally regulated markets without compromising electrical or thermal performance - IRF9Z24PBF-BE3 retains identical absolute maximum ratings and electrical characteristics as non-BE3 variants.

IRF9Z24PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 280mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF9Z24PBF-BE3 FAQ

1.How can I place an order for IRF9Z24PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z24PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z24PBF-BE3 reliable?

The price and inventory of IRF9Z24PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z24PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRF9Z24PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z24PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z24PBF-BE3?

IRF9Z24PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z24PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z24PBF-BE3?

For technical support, including IRF9Z24PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z24PBF-BE3 requirements.

6.How does Aetrix verify that IRF9Z24PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRF9Z24PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z24PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRF9Z24PBF-BE3?

All IRF9Z24PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z24PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z24PBF-BE3 part is unused and in its original packaging.

Return procedure for IRF9Z24PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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