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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9Z24S

Name: IRF9Z24S
Brand: Vishay Siliconix
SKU: IRF9Z24S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z24S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9Z24S.pdf

Description:: MOSFET P-CH 60V 11A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF9Z24S from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -60 V drain-source voltage, 0.28 Ω R_DS(on) at V_GS = -10 V, and -11 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency high-side switch in DC-DC converters, motor control H-bridges, and load switching circuits operating up to 175 °C junction temperature.

For engineers reviewing the IRF9Z24S datasheet, IRF9Z24S pinout, IRF9Z24S application, or IRF9Z24S equivalent, key selection criteria include its fully avalanche-rated capability (240 mJ single-pulse), fast switching performance (13 ns turn-on delay, 68 ns rise time), low gate charge (19 nC total), and compatibility with surface-mount thermal management on FR-4 PCBs.

Technical Context

This device employs third-generation silicon processing to achieve low on-resistance per die area while maintaining ruggedness against repetitive avalanche stress. Its P-channel topology enables simple high-side switching without level-shifting gate drivers in low-voltage systems.

Thermal design leverages the D2PAK's low R_thJC of 2.5 °C/W and supports 60 W power dissipation at T_C = 25 °C. The integral body diode exhibits 100–200 ns reverse recovery time and 320–640 nC Q_rr, making it suitable for synchronous rectification and inductive load commutation where controlled diode conduction is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage for high-side switch in ≤60 V bus systems
R_DS(on) @ V_GS = -10 V	0.28 Ω - Enables ≤0.4 W conduction loss at -6.6 A, critical for thermal budget in compact layouts
Q_g (total)	19 nC - Determines gate driver current requirement and switching loss in PWM applications
I_D (continuous, T_C = 25 °C)	-11 A - Sustains steady-state load current with adequate heatsinking on standard PCB
E_AS (single-pulse)	240 mJ - Withstands unclamped inductive energy during fault events without failure
T_J range	-55 to +175 °C - Supports operation in automotive under-hood and industrial motor drive environments
dV/dt rating	-4.5 V/ns - Resists false triggering from high dv/dt noise in switching nodes

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration (G, D, S) oriented per JEDEC outline; requires minimum 0.420" × 0.355" copper pad per Vishay recommended layout.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives negative V_GS to turn on; 5.4 nC Q_gs defines Miller plateau duration
Drain (D)	High-side switched output	Connected to exposed metal tab; electrically and thermally coupled to PCB ground plane
Source (S)	Power return reference	Provides common node for load current return and gate drive reference in high-side configuration

Key Features

Feature	Design Value
Fully avalanche rated	240 mJ single-pulse E_AS ensures robustness against inductive kickback without external snubbers
175 °C maximum junction temperature	Enables reliable operation in sealed enclosures or high-ambient industrial environments
Low R_DS(on) × Q_g figure-of-merit	0.28 Ω × 19 nC = 5.32 Ω·nC - balances conduction and switching losses in 100–500 kHz SMPS
Fast body diode recovery	100–200 ns t_rr and 320–640 nC Q_rr reduce switching losses when used in synchronous or freewheeling roles
Surface mount (D2PAK)	Supports automated assembly and delivers 2.0 W typical power dissipation without discrete heatsink

Applications

DC-DC Buck Converter High-Side Switch	Brushed DC Motor H-Bridge Upper Arm
Use Scenario: High-efficiency 12 V to 5 V/3.3 V point-of-load converter in telecom power supplies. IC Role / Device Role / Timing Role: P-channel high-side main switch controlling duty cycle and regulating output voltage. Use Value: Low 0.28 Ω R_DS(on) minimizes conduction loss at full load; 19 nC Q_g enables clean 300 kHz switching with standard gate drivers.	Use Scenario: Bidirectional 24 V brushed motor control in industrial actuators with regenerative braking. IC Role / Device Role / Timing Role: Upper-arm switch in half-bridge configuration enabling forward/reverse polarity control. Use Value: Fully avalanche-rated design withstands back-EMF spikes during rapid direction reversal; 175 °C rating supports enclosed motor housing temperatures.
Hot-Swap Load Switch	LED String Power Control
Use Scenario: Inrush-limited 48 V server board insertion into live backplane. IC Role / Device Role / Timing Role: High-side series pass element with gate-controlled soft-start via RC timing network. Use Value: -60 V V_DS provides margin above 48 V nominal; -11 A I_D supports ≥10 A hot-swap loads with derating.	Use Scenario: Constant-current dimming of 3–5 V white LED strings in architectural lighting fixtures. IC Role / Device Role / Timing Role: PWM-controlled high-side current regulator using analog feedback loop. Use Value: Fast 13 ns t_d(on)/29 ns t_f enables precise 1–10 kHz dimming without visible flicker; low Q_g reduces gate drive power overhead.

DC-DC Buck Converter High-Side Switch

Brushed DC Motor H-Bridge Upper Arm

Use Scenario: High-efficiency 12 V to 5 V/3.3 V point-of-load converter in telecom power supplies.

IC Role / Device Role / Timing Role: P-channel high-side main switch controlling duty cycle and regulating output voltage.

Use Value: Low 0.28 Ω R_DS(on) minimizes conduction loss at full load; 19 nC Q_g enables clean 300 kHz switching with standard gate drivers.

Use Scenario: Bidirectional 24 V brushed motor control in industrial actuators with regenerative braking.

IC Role / Device Role / Timing Role: Upper-arm switch in half-bridge configuration enabling forward/reverse polarity control.

Use Value: Fully avalanche-rated design withstands back-EMF spikes during rapid direction reversal; 175 °C rating supports enclosed motor housing temperatures.

Hot-Swap Load Switch

LED String Power Control

Use Scenario: Inrush-limited 48 V server board insertion into live backplane.

IC Role / Device Role / Timing Role: High-side series pass element with gate-controlled soft-start via RC timing network.

Use Value: -60 V V_DS provides margin above 48 V nominal; -11 A I_D supports ≥10 A hot-swap loads with derating.

Use Scenario: Constant-current dimming of 3–5 V white LED strings in architectural lighting fixtures.

IC Role / Device Role / Timing Role: PWM-controlled high-side current regulator using analog feedback loop.

Use Value: Fast 13 ns t_d(on)/29 ns t_f enables precise 1–10 kHz dimming without visible flicker; low Q_g reduces gate drive power overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9Z34N	V_DS = -55 V, R_DS(on) = 0.20 Ω @ -10 V, Q_g = 22 nC, same D2PAK package	Lower voltage rating but lower on-resistance; higher gate charge increases switching loss	Select when system bus ≤55 V and lowest conduction loss is prioritized over gate drive efficiency
SiHF9Z24S	Identical electrical specs; RoHS-compliant, halogen-free variant with GE3 suffix; same D2PAK package	No functional difference; meets environmental compliance requirements for EU/Asia markets	Select for new designs requiring lead-free/halogen-free certification without changing layout or thermal design

Compared with IRF9Z24S, IRF9Z34N offers lower R_DS(on) but reduced voltage margin and higher Q_g, while SiHF9Z24S provides identical performance with enhanced environmental compliance-making it a drop-in replacement for regulated markets without design change.

Availability

IRF9Z24S is available at Aetrix Electronics and suitable for DC-DC converters, motor control H-bridges, and hot-swap load switching applications requiring stable component supply across extended production lifecycles.

Supply support for IRF9Z24S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.

The IRF9Z24S belongs to Vishay's third-generation power MOSFET family engineered for high-current, high-temperature switching in industrial power conversion and motor control systems.

FAQ

What is the maximum continuous drain current for IRF9Z24S at 100 °C case temperature?

The IRF9Z24S supports -7.7 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the D2PAK package under real-world heatsinking conditions and must be verified against actual board layout and ambient airflow in the target application.

Does IRF9Z24S have a built-in body diode, and what are its key parameters?

Yes, the IRF9Z24S integrates a body diode inherent to its MOSFET structure. Key parameters include -11 A continuous source-drain current, -6.3 V forward voltage at -11 A and 25 °C, and 100–200 ns reverse recovery time with 320–640 nC reverse recovery charge-critical for evaluating freewheeling behavior in inductive loads.

Is IRF9Z24S pin-compatible with IRF9Z24 or SiHF9Z24?

Yes, IRF9Z24S shares identical pinout, package (D2PAK), and electrical specifications with IRF9Z24 and SiHF9Z24, as confirmed by Vishay's datasheet notes referencing shared test conditions and device orientation. All three are functionally interchangeable in existing layouts.

What is the gate threshold voltage range for IRF9Z24S, and how does it affect drive circuit design?

The IRF9Z24S has a gate-source threshold voltage (V_GS(th)) range of -2.0 V to -4.0 V at I_D = -250 μA. This wide range necessitates gate drive voltages ≤ -10 V to ensure full enhancement across process and temperature variation, avoiding linear-mode operation and excessive power dissipation during switching transitions.

Can IRF9Z24S be used in avalanche mode repeatedly, and what limits its repetitive avalanche capability?

Yes, IRF9Z24S is fully rated for repetitive avalanche operation with I_AR = -11 A and E_AR = 6.0 mJ per pulse. Repetitive avalanche is limited by junction temperature rise-pulse width and duty cycle must be constrained so that peak T_J remains ≤175 °C, as shown in Figure 11's transient thermal impedance curve.

IRF9Z24S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9Z24S FAQ

1.How can I place an order for IRF9Z24S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z24S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z24S reliable?

The price and inventory of IRF9Z24S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z24S is usually 5 days.

3.What payment methods are accepted for IRF9Z24S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z24S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z24S?

IRF9Z24S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z24S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z24S?

For technical support, including IRF9Z24S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z24S requirements.

6.How does Aetrix verify that IRF9Z24S is sourced from the original manufacturer or authorized distributors?

All IRF9Z24S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z24S meets industry standards.

7.What is the process for return or replacement of IRF9Z24S?

All IRF9Z24S units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z24S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z24S part is unused and in its original packaging.

Return procedure for IRF9Z24S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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