Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9Z24SPBF

Name: IRF9Z24SPBF
Brand: Vishay Siliconix
SKU: IRF9Z24SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF9Z24SPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9Z24SPBF.pdf

Description:: MOSFET P-CH 60V 11A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,327

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF9Z24SPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -60 V drain-source voltage, 0.28 Ω on-resistance at -10 V gate drive, and -11 A continuous drain current at 25 °C. It delivers fast switching, full avalanche ruggedness, and 175 °C junction operation for high-reliability DC-DC converters and motor control circuits.

For engineers reviewing the IRF9Z24SPBF datasheet, IRF9Z24SPBF pinout, IRF9Z24SPBF application, or IRF9Z24SPBF equivalent, key selection criteria include its -60 V V_DS, 0.28 Ω R_DS(on), 19 nC total gate charge, D2PAK thermal performance (R_thJC = 2.5 °C/W), and body diode recovery characteristics (t_rr = 100–200 ns).

Technical Context

This device uses Vishay's third-generation silicon process to achieve low on-resistance per die area while maintaining robust avalanche capability (E_AS = 240 mJ). Its P-channel architecture enables high-side switching without level-shifting circuitry in buck regulators and load switches.

The D2PAK package provides low thermal resistance (R_thJC = 2.5 °C/W) and high power dissipation (60 W at T_C = 25 °C), supporting high-current applications where PCB-mount thermal management is critical. The integral body diode supports synchronous rectification and flyback energy recovery in inductive loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Supports input rails up to 48 V DC systems with margin for transients
R_DS(on) @ V_GS = -10 V	0.28 Ω - Enables <1.0 W conduction loss at -6.6 A, reducing heatsink requirements
Q_g (total)	19 nC - Determines gate driver strength needed for <100 ns switching transitions
I_D (continuous)	-11 A @ T_C = 25 °C - Sustains steady-state load current in high-side switch configurations
E_AS	240 mJ - Withstands unclamped inductive energy during fault conditions without failure
t_rr (body diode)	100–200 ns - Limits reverse recovery losses in hard-switched topologies
T_J max	+175 °C - Allows operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (Drain, Gate, Source); standard JEDEC outline with 2.54 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically and thermally connected to large copper pad; must be soldered to PCB ground plane or heatsink for R_thJC = 2.5 °C/W performance
Gate	Control terminal for channel modulation	Requires negative V_GS (≤ -2.0 V threshold) to turn on; sensitive to ESD; driven via low-impedance source due to 19 nC Q_g
Source	Reference node for gate drive and current return	Connected to system ground or floating rail; defines V_GS reference; carries full load current (-11 A)

Key Features

Feature	Design Value
Fully avalanche rated	240 mJ single-pulse energy handling ensures robustness against inductive kickback without external snubbers
175 °C maximum junction temperature	Enables deployment in automotive under-hood or industrial motor drive environments without derating
Fast switching (t_d(on) = 13 ns, t_f = 29 ns)	Reduces switching losses in high-frequency DC-DC converters (>100 kHz) and PWM motor drivers
Low R_DS(on) × Q_g figure of merit (5.32 Ω·nC)	Optimizes trade-off between conduction and switching loss for medium-power SMPS designs
Surface-mount D2PAK package	Delivers 60 W power dissipation in compact footprint-higher than TO-220 while enabling automated assembly

Applications

High-Side Load Switch	Buck Converter High-Side Switch
Use Scenario: Power sequencing and hot-swap control in telecom line cards and server PSUs. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by simple inverting logic or dedicated load switch controller. Use Value: Eliminates need for bootstrap circuitry or level shifters; leverages -60 V rating and -11 A current to support 12–48 V input rails with minimal BOM count.	Use Scenario: Primary switching element in non-synchronous buck regulators for FPGA core supplies. IC Role / Device Role / Timing Role: High-side power switch operating at 200–500 kHz with body diode conducting freewheeling current during low-side interval. Use Value: 0.28 Ω R_DS(on) limits conduction loss; 100–200 ns t_rr reduces diode recovery loss and EMI compared to slower alternatives.
Motor Driver Half-Bridge	Industrial DC Power Distribution
Use Scenario: Upper switch in H-bridge for 24 V brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: P-channel high-side switch paired with N-channel low-side device; operated with dead-time control to prevent shoot-through. Use Value: Avalanche rating (240 mJ) absorbs inductive energy during rapid direction reversal; 175 °C rating sustains operation during extended stall conditions.	Use Scenario: Overcurrent-protected power distribution in programmable logic controllers (PLCs) and I/O modules. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays or fuses; controlled via microcontroller GPIO with optional current sensing. Use Value: Fast turn-off (<29 ns fall time) enables precise fault current limiting; D2PAK thermal design supports continuous 7.7 A at 100 °C case temperature.

High-Side Load Switch

Buck Converter High-Side Switch

Use Scenario: Power sequencing and hot-swap control in telecom line cards and server PSUs.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by simple inverting logic or dedicated load switch controller.

Use Value: Eliminates need for bootstrap circuitry or level shifters; leverages -60 V rating and -11 A current to support 12–48 V input rails with minimal BOM count.

Use Scenario: Primary switching element in non-synchronous buck regulators for FPGA core supplies.

IC Role / Device Role / Timing Role: High-side power switch operating at 200–500 kHz with body diode conducting freewheeling current during low-side interval.

Use Value: 0.28 Ω R_DS(on) limits conduction loss; 100–200 ns t_rr reduces diode recovery loss and EMI compared to slower alternatives.

Motor Driver Half-Bridge

Industrial DC Power Distribution

Use Scenario: Upper switch in H-bridge for 24 V brushed DC motors in factory automation actuators.

IC Role / Device Role / Timing Role: P-channel high-side switch paired with N-channel low-side device; operated with dead-time control to prevent shoot-through.

Use Value: Avalanche rating (240 mJ) absorbs inductive energy during rapid direction reversal; 175 °C rating sustains operation during extended stall conditions.

Use Scenario: Overcurrent-protected power distribution in programmable logic controllers (PLCs) and I/O modules.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays or fuses; controlled via microcontroller GPIO with optional current sensing.

Use Value: Fast turn-off (<29 ns fall time) enables precise fault current limiting; D2PAK thermal design supports continuous 7.7 A at 100 °C case temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9Z34NPBF	-60 V V_DS, 0.20 Ω R_DS(on), 17 nC Q_g, TO-220 package	Lower R_DS(on) but higher R_thJA (62 °C/W vs. 40 °C/W); no D2PAK thermal pad	Prefer when board space allows TO-220 and lower conduction loss outweighs thermal advantage of D2PAK
SiHF9Z24STRL-GE3	Identical silicon and specs; RoHS-compliant, halogen-free, tape-and-reel packaging	No functional difference; optimized for automated SMT production with Pb-free finish	Select when lead-free compliance and volume reel delivery are required; same thermal and electrical behavior as IRF9Z24SPBF

Compared with IRF9Z24SPBF, IRF9Z34NPBF offers lower on-resistance but sacrifices thermal performance and surface-mount compatibility, while SiHF9Z24STRL-GE3 provides identical electrical behavior with enhanced environmental compliance and packaging for high-volume manufacturing.

Availability

IRF9Z24SPBF is available at Aetrix Electronics and suitable for high-side load switching, buck converter power stages, motor driver half-bridges, and industrial DC power distribution requiring stable component supply and long-term manufacturability.

Supply support for IRF9Z24SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-efficiency power conversion.

The IRF9Z24SPBF belongs to Vishay's third-generation power MOSFET family, engineered for high-current, high-temperature switching in industrial power supplies, motor controls, and telecom infrastructure where avalanche robustness and thermal performance are critical.

FAQ

What is the maximum continuous drain current for IRF9Z24SPBF at 100 °C case temperature?

The IRF9Z24SPBF supports -7.7 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within its 175 °C maximum junction temperature. Designers must verify PCB copper area and airflow to maintain T_C ≤ 100 °C under full load. The IRF9Z24SPBF datasheet confirms this value under "Continuous Drain Current" with footnote "TC = 100 °C".

Does IRF9Z24SPBF have a built-in body diode, and what are its key parameters?

Yes, the IRF9Z24SPBF integrates a body diode inherent to its vertical P-channel MOSFET structure. Key parameters include -11 A continuous forward current (I_S), -6.3 V forward voltage (V_SD) at -11 A and 25 °C, and 100–200 ns reverse recovery time (t_rr). These values are measured with V_GS = 0 V and enable use in freewheeling and clamping roles. The IRF9Z24SPBF body diode is fully characterized in the "Drain-Source Body Diode Characteristics" section of its datasheet.

What is the gate threshold voltage range for IRF9Z24SPBF, and how does it affect drive requirements?

The IRF9Z24SPBF has a gate threshold voltage (V_GS(th)) range of -2.0 V to -4.0 V at I_D = -250 μA, meaning it begins conducting significantly between those voltages. Full enhancement requires V_GS ≤ -10 V to achieve R_DS(on) = 0.28 Ω. This negative threshold mandates a negative gate drive relative to the source, making it suitable for high-side configurations with simple inverting drivers. The IRF9Z24SPBF specification sheet lists this in the "Static" subsection under "Gate-Source Threshold Voltage".

Can IRF9Z24SPBF be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the IRF9Z24SPBF is fully avalanche rated with a single-pulse avalanche energy (E_AS) of 240 mJ under test conditions of V_DD = -25 V, starting T_J = 25 °C, L = 2.3 mH, R_g = 25 Ω, and I_AS = -11 A. This rating allows safe operation during inductive switching events without external protection. The IRF9Z24SPBF datasheet explicitly states "Fully avalanche rated" in Features and provides E_AS in Absolute Maximum Ratings.

What is the thermal resistance from junction to case (R_thJC) for IRF9Z24SPBF, and why is it important?

The IRF9Z24SPBF has a maximum junction-to-case thermal resistance (R_thJC) of 2.5 °C/W, measured from the silicon die to the exposed drain tab. This low value enables efficient heat transfer to an external heatsink or PCB copper plane, supporting up to 60 W power dissipation at T_C = 25 °C. Accurate thermal design using R_thJC is essential to prevent exceeding the 175 °C maximum junction temperature. The IRF9Z24SPBF Thermal Resistance Ratings table specifies this parameter under "Maximum Junction-to-Case (Drain)".

IRF9Z24SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9Z24SPBF FAQ

1.How can I place an order for IRF9Z24SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z24SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z24SPBF reliable?

The price and inventory of IRF9Z24SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z24SPBF is usually 5 days.

3.What payment methods are accepted for IRF9Z24SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z24SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z24SPBF?

IRF9Z24SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z24SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z24SPBF?

For technical support, including IRF9Z24SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z24SPBF requirements.

6.How does Aetrix verify that IRF9Z24SPBF is sourced from the original manufacturer or authorized distributors?

All IRF9Z24SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z24SPBF meets industry standards.

7.What is the process for return or replacement of IRF9Z24SPBF?

All IRF9Z24SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z24SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z24SPBF part is unused and in its original packaging.

Return procedure for IRF9Z24SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …