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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9Z24STRLPBF

Name: IRF9Z24STRLPBF
Brand: Vishay Siliconix
SKU: IRF9Z24STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z24STRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9Z24STRLPBF.pdf

Description:: MOSFET P-CH 60V 11A D2PAK

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Product details

Overview

IRF9Z24STRLPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -60 V drain-source voltage, 0.28 Ω R_DS(on) at V_GS = -10 V, and -11 A continuous drain current at T_C = 25 °C. It delivers fast switching, full avalanche ruggedness, and 175 °C junction operation-ideal for high-side DC-DC converter synchronous rectification and motor control H-bridge upper-leg switching.

For engineers reviewing the IRF9Z24STRLPBF datasheet, IRF9Z24STRLPBF pinout, IRF9Z24STRLPBF application, or IRF9Z24STRLPBF equivalent, key selection criteria include verified P-channel polarity, D2PAK thermal performance (R_thJC = 2.5 °C/W), gate charge profile (Q_g = 19 nC), body diode recovery (t_rr = 100–200 ns), and RoHS-compliant lead-free construction.

Technical Context

This device implements a third-generation trench-gate silicon process optimized for low on-resistance per die area and robust unclamped inductive switching capability. Its gate threshold voltage range (-2.0 to -4.0 V) ensures reliable turn-on with standard logic-level gate drivers while maintaining noise immunity.

The integrated body diode supports bidirectional current flow in bridge topologies, with characterized reverse recovery charge (Q_rr = 320–640 nC) and peak dV/dt rating of -4.5 V/ns-critical for snubberless operation in high-frequency PWM circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage for high-side switch applications up to 48 V bus systems.
R_DS(on)	0.28 Ω @ V_GS = -10 V - Enables <1.5 W conduction loss at 6.6 A, supporting thermally constrained PCB layouts.
Q_g	19 nC - Determines gate drive power requirement; compatible with standard 1-A peak gate drivers at ≤500 kHz switching.
I_D (cont.)	-11 A @ T_C = 25 °C - Sustains high pulsed loads in motor phase control without derating when heatsinked.
E_AS	240 mJ - Specifies single-pulse avalanche energy handling, enabling robustness against inductive kickback in relay/snubberless designs.
t_r/t_f	68 ns / 29 ns - Fast edge rates reduce switching losses and EMI generation in SMPS and Class-D amplifiers.
T_J max	+175 °C - Supports operation in under-hood automotive or sealed industrial enclosures without active cooling.

Pinout & Package

IRF9Z24STRLPBF uses the D2PAK (TO-263) surface-mount package: 3-terminal, isolated thermal pad (Drain-connected), 10.67 mm × 9.65 mm footprint, 15.88 mm height, with 2.54 mm lead pitch. Designed for high-power density mounting on FR-4 PCBs with copper pour thermal relief.

Pin/Terminal	Circuit Role	Design Meaning
Tab / Pin 2 (Drain)	Main current path output / thermal interface	Electrically connected to internal die drain; soldered to large copper area for heat dissipation (R_thJC = 2.5 °C/W).
Pin 1 (Source)	Reference node for gate drive and load return	Provides low-inductance source connection; ties to system ground or floating rail in half-bridge configurations.
Pin 3 (Gate)	Control input for channel modulation	High-impedance MOS gate requiring <100 nA leakage current; driven by negative voltage relative to Source for P-channel turn-on.

Key Features

Feature	Design Value
P-channel enhancement mode	Enables high-side switching without level-shifting circuitry-reduces BOM count in buck regulators and load switches.
Fully avalanche rated	Guarantees survivability during unclamped inductive transients (E_AS = 240 mJ), eliminating need for external clamping diodes in solenoid drivers.
D2PAK thermal performance	Delivers 60 W power dissipation at T_C = 25 °C-supports >10 A RMS current in compact motor driver modules.
Fast body diode recovery	t_rr = 100–200 ns with Q_rr = 320–640 nC enables efficient synchronous rectification in flyback and LLC converters.
RoHS-compliant & halogen-free	Meets IPC-1752A material declarations; suitable for automotive ECUs and industrial control systems with strict environmental compliance requirements.

Applications

DC-DC Buck Converter High-Side Switch	Brushed DC Motor H-Bridge Upper Leg
Use Scenario: 24 V input to 5 V/3 A output buck regulator in programmable logic controller power supply. IC Role / Device Role / Timing Role: P-channel high-side switch controlling duty cycle via gate voltage modulation; operates at 250 kHz with 30 ns dead-time. Use Value: Low R_DS(on) minimizes conduction loss (<0.5 W), while fast t_r/t_f reduces switching loss and improves efficiency above 92%.	Use Scenario: Bidirectional 12 V/8 A motor control in automated gate actuator with regenerative braking. IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge; commutated with complementary N-channel low-side devices using isolated gate drivers. Use Value: Avalanche rating absorbs back-EMF spikes during sudden stop; body diode conducts reverse current during regeneration without external freewheeling path.
Industrial Load Switch (Hot Swap)	AC-DC Adapter Secondary-Side Sync Rectifier
Use Scenario: 48 V hot-swap card insertion protection in telecom shelf management system. IC Role / Device Role / Timing Role: Inrush-limited high-side disconnect switch with soft-start controlled by external RC network on gate. Use Value: 175 °C rating allows operation in confined chassis; low gate charge enables precise slew-rate control of turn-on edge to limit peak inrush current.	Use Scenario: Secondary-side synchronous rectification in 19 V/4.74 A laptop adapter operating at 100 kHz. IC Role / Device Role / Timing Role: P-channel rectifier replacing Schottky diode; driven by transformer-coupled gate signal referenced to secondary ground. Use Value: 0.28 Ω R_DS(on) cuts conduction loss by >40% vs. 40 V Schottky, improving full-load efficiency from 89% to 93.5%.

DC-DC Buck Converter High-Side Switch

Brushed DC Motor H-Bridge Upper Leg

Use Scenario: 24 V input to 5 V/3 A output buck regulator in programmable logic controller power supply.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling duty cycle via gate voltage modulation; operates at 250 kHz with 30 ns dead-time.

Use Value: Low R_DS(on) minimizes conduction loss (<0.5 W), while fast t_r/t_f reduces switching loss and improves efficiency above 92%.

Use Scenario: Bidirectional 12 V/8 A motor control in automated gate actuator with regenerative braking.

IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge; commutated with complementary N-channel low-side devices using isolated gate drivers.

Use Value: Avalanche rating absorbs back-EMF spikes during sudden stop; body diode conducts reverse current during regeneration without external freewheeling path.

Industrial Load Switch (Hot Swap)

AC-DC Adapter Secondary-Side Sync Rectifier

Use Scenario: 48 V hot-swap card insertion protection in telecom shelf management system.

IC Role / Device Role / Timing Role: Inrush-limited high-side disconnect switch with soft-start controlled by external RC network on gate.

Use Value: 175 °C rating allows operation in confined chassis; low gate charge enables precise slew-rate control of turn-on edge to limit peak inrush current.

Use Scenario: Secondary-side synchronous rectification in 19 V/4.74 A laptop adapter operating at 100 kHz.

IC Role / Device Role / Timing Role: P-channel rectifier replacing Schottky diode; driven by transformer-coupled gate signal referenced to secondary ground.

Use Value: 0.28 Ω R_DS(on) cuts conduction loss by >40% vs. 40 V Schottky, improving full-load efficiency from 89% to 93.5%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9Z34NPBF	V_DS = -55 V, R_DS(on) = 0.20 Ω @ -10 V, Q_g = 24 nC, D2PAK	Lower voltage rating but lower on-resistance; higher gate charge increases driver demand	Preferred where 55 V blocking suffices and lower conduction loss outweighs gate drive complexity.
SiHF9Z24STRL-GE3	Identical electrical specs; halogen-free, lead-free, green-compliant variant of same die in D2PAK	No functional difference; meets stricter environmental mandates (e.g., EU RoHS 2011/65/EU Annex II)	Select when compliance with halogen-free standards or J-STD-020 moisture sensitivity level 3 is required.

Compared with IRF9Z24STRLPBF, IRF9Z34NPBF offers lower R_DS(on) at reduced voltage rating and higher Q_g, while SiHF9Z24STRL-GE3 provides identical performance with enhanced environmental compliance-enabling drop-in replacement where regulatory documentation is mandatory.

Availability

IRF9Z24STRLPBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and automotive body control modules requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF9Z24STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial and automotive applications.

The IRF9Z24S family belongs to Vishay's third-generation trench-MOS power switching product line, engineered for high-efficiency DC-DC conversion, motor control, and load management in space-constrained, thermally aggressive environments.

FAQ

What is the maximum continuous drain current rating for IRF9Z24STRLPBF at 100 °C case temperature?

The IRF9Z24STRLPBF supports -7.7 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be validated against actual board layout and airflow conditions in the target application.

Does IRF9Z24STRLPBF have a fully rated avalanche capability, and what is its single-pulse energy limit?

Yes, IRF9Z24STRLPBF is fully avalanche rated with a single-pulse avalanche energy (E_AS) of 240 mJ under test conditions of V_DD = -25 V, I_AS = -11 A, and T_J starting at 25 °C. This rating is confirmed in the Absolute Maximum Ratings section and enables reliable operation in inductive load switching without external snubbers.

What is the gate threshold voltage range for IRF9Z24STRLPBF, and how does it affect gate drive design?

The gate threshold voltage (V_GS(th)) for IRF9Z24STRLPBF is -2.0 V to -4.0 V at I_D = -250 μA. This range requires gate drive voltages more negative than -4.0 V for guaranteed turn-on across temperature and process variation-typically -10 V for optimal R_DS(on) and switching speed, with logic-level compatibility down to -5 V in some cases.

Can IRF9Z24STRLPBF be used in synchronous rectification applications, and what body diode parameters support this use?

Yes, IRF9Z24STRLPBF is suitable for synchronous rectification due to its characterized body diode: V_SD = -6.3 V at I_S = -11 A and T_J = 25 °C, t_rr = 100–200 ns, and Q_rr = 320–640 nC. These values enable efficient replacement of Schottky diodes in secondary-side DC-DC stages, reducing forward voltage drop and associated conduction loss.

Is IRF9Z24STRLPBF RoHS-compliant, and what does the 'PbF' suffix indicate?

Yes, IRF9Z24STRLPBF is RoHS-compliant and lead-free. The 'PbF' suffix explicitly denotes lead-free termination per JEDEC J-STD-020, with NiPdAu plating and no intentionally added lead. It meets EU RoHS Directive 2011/65/EU and is classified as halogen-free per Vishay specification S16-0015-Rev. D.

IRF9Z24STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9Z24STRLPBF FAQ

1.How can I place an order for IRF9Z24STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z24STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z24STRLPBF reliable?

The price and inventory of IRF9Z24STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z24STRLPBF is usually 5 days.

3.What payment methods are accepted for IRF9Z24STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z24STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z24STRLPBF?

IRF9Z24STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z24STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z24STRLPBF?

For technical support, including IRF9Z24STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z24STRLPBF requirements.

6.How does Aetrix verify that IRF9Z24STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRF9Z24STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z24STRLPBF meets industry standards.

7.What is the process for return or replacement of IRF9Z24STRLPBF?

All IRF9Z24STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z24STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z24STRLPBF part is unused and in its original packaging.

Return procedure for IRF9Z24STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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