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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9Z24STRRPBF

Name: IRF9Z24STRRPBF
Brand: Vishay Siliconix
SKU: IRF9Z24STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z24STRRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9Z24STRRPBF.pdf

Description:: MOSFET P-CH 60V 11A D2PAK

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Product details

Overview

IRF9Z24STRRPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -60 V drain-source voltage, 0.28 Ω R_DS(on) at V_GS = -10 V, and -11 A continuous drain current at T_C = 25 °C. It delivers fast switching, full avalanche ruggedness, and 175 °C operating junction temperature for high-reliability DC-DC converter high-side switches and motor control H-bridge legs.

For engineers reviewing the IRF9Z24STRRPBF datasheet, IRF9Z24STRRPBF pinout, IRF9Z24STRRPBF application, or IRF9Z24STRRPBF equivalent, key selection criteria include verified -60 V V_DS, confirmed 0.28 Ω R_DS(on) at -10 V gate drive, documented 19 nC total gate charge, and D2PAK thermal performance enabling 60 W dissipation at T_C = 25 °C.

Technical Context

This device implements a planar silicon-gate process optimized for low on-resistance per die area and robust unclamped inductive switching capability. Its P-channel architecture enables high-side switching without level-shifting circuitry in buck regulators and load-switch applications.

Thermal design leverages the D2PAK's low 2.5 °C/W junction-to-case resistance and 40 °C/W junction-to-ambient rating on FR-4 PCBs. Avalanche energy rating of 240 mJ (single-pulse) and repetitive 6.0 mJ support reliable operation under transient overloads in industrial motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage for 48 V bus systems with 20 % margin
R_DS(on)	0.28 Ω @ V_GS = -10 V - Enables ≤ 3.4 W conduction loss at -6.6 A DC load
Q_g	19 nC - Determines gate driver current requirement for < 20 ns turn-on delay
I_D (cont.)	-11 A @ T_C = 25 °C - Supports 10 A load with 10 % derating in thermally constrained layouts
E_AS	240 mJ - Withstands single inductive energy spikes up to 240 mJ without failure
T_J max	+175 °C - Allows operation in sealed enclosures or high-ambient industrial environments
C_iss	570 pF - Impacts gate drive loop stability and EMI filtering requirements

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab for thermal conduction and mechanical anchoring. Dimensions: 10.67 mm × 9.65 mm × 4.83 mm (L × W × H), 3-pin configuration, JEDEC-compliant outline.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain (D)	Electrically and thermally connected to large copper pad; primary heat path to PCB
Pin 2	Gate (G)	High-impedance MOSFET control input requiring < 100 nA leakage current handling
Pin 3	Source (S)	Reference node for gate drive; carries full load current and body diode reverse recovery charge

Key Features

Feature	Design Value
Fully avalanche rated	240 mJ single-pulse E_AS validated per JEDEC JESD24-11 - eliminates need for external snubbers in inductive switching
175 °C maximum junction temperature	Enables use in sealed automotive engine compartments or industrial PLCs without forced air cooling
Fast switching (t_r = 68 ns, t_f = 29 ns)	Reduces switching losses in 100–500 kHz DC-DC converters, improving efficiency > 2 % at 10 A
Low R_DS(on) × Q_g figure of merit	5.32 Ω·nC - balances conduction and switching loss trade-off for medium-frequency power stages
D2PAK package thermal performance	2.5 °C/W R_thJC - allows 60 W power dissipation with minimal heatsink in compact designs

Applications

DC-DC Buck Converter High-Side Switch	Industrial Motor Control H-Bridge
Use Scenario: 48 V input to 12 V/10 A output synchronous buck regulator in telecom power supply. IC Role / Device Role / Timing Role: High-side P-channel MOSFET providing main power switch with no bootstrap complexity. Use Value: Eliminates gate driver level shifter; 0.28 Ω R_DS(on) limits conduction loss to 2.8 W at full load.	Use Scenario: Bidirectional 24 V brushed DC motor drive in factory automation actuator. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge topology controlling motor direction and braking. Use Value: 240 mJ E_AS withstands inductive kickback during PWM reversal without clamping diodes.
Hot-Swap Load Switch	Overvoltage Protection Circuit
Use Scenario: 36 V battery-powered medical device requiring inrush-limited hot-plug insertion. IC Role / Device Role / Timing Role: Series pass element controlled by dedicated load switch IC for soft-start sequencing. Use Value: -60 V V_DS provides 24 V headroom above nominal bus; 175 °C rating supports sealed enclosure operation.	Use Scenario: Input protection for sensitive 24 V industrial controller against accidental 48 V misconnection. IC Role / Device Role / Timing Role: Clamping switch activated by overvoltage detector to short excess voltage to ground. Use Value: Fast 29 ns fall time ensures sub-microsecond response to transients; body diode V_SD = -6.3 V defines clamping threshold.

DC-DC Buck Converter High-Side Switch

Industrial Motor Control H-Bridge

Use Scenario: 48 V input to 12 V/10 A output synchronous buck regulator in telecom power supply.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET providing main power switch with no bootstrap complexity.

Use Value: Eliminates gate driver level shifter; 0.28 Ω R_DS(on) limits conduction loss to 2.8 W at full load.

Use Scenario: Bidirectional 24 V brushed DC motor drive in factory automation actuator.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge topology controlling motor direction and braking.

Use Value: 240 mJ E_AS withstands inductive kickback during PWM reversal without clamping diodes.

Hot-Swap Load Switch

Overvoltage Protection Circuit

Use Scenario: 36 V battery-powered medical device requiring inrush-limited hot-plug insertion.

IC Role / Device Role / Timing Role: Series pass element controlled by dedicated load switch IC for soft-start sequencing.

Use Value: -60 V V_DS provides 24 V headroom above nominal bus; 175 °C rating supports sealed enclosure operation.

Use Scenario: Input protection for sensitive 24 V industrial controller against accidental 48 V misconnection.

IC Role / Device Role / Timing Role: Clamping switch activated by overvoltage detector to short excess voltage to ground.

Use Value: Fast 29 ns fall time ensures sub-microsecond response to transients; body diode V_SD = -6.3 V defines clamping threshold.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHF9Z24STRR-GE3	Same silicon die, RoHS-compliant halogen-free construction; identical R_DS(on), Q_g, and avalanche ratings	No functional difference; preferred where lead-free/halogen-free compliance is mandatory	Select SiHF9Z24STRR-GE3 for new designs targeting IEC 61249-2-21 or IPC-1752A material declarations
IRF9Z34NPbF	Higher R_DS(on) (0.35 Ω), lower Q_g (14 nC), same -60 V rating and D2PAK package	Slightly higher conduction loss but faster switching; less suitable for high-current continuous loads	Choose IRF9Z34NPbF only when switching frequency > 300 kHz dominates loss budget over conduction loss

Compared with IRF9Z24STRRPBF, SiHF9Z24STRR-GE3 offers identical electrical performance with enhanced environmental compliance, while IRF9Z34NPbF trades 25 % higher on-resistance for reduced gate charge-making IRF9Z24STRRPBF optimal for thermally constrained 10–20 A DC applications.

Availability

IRF9Z24STRRPBF is available at Aetrix Electronics and suitable for industrial motor control, DC-DC power conversion, and hot-swap load switching requiring stable component supply across multi-year production cycles.

Supply support for IRF9Z24STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with vertical manufacturing and reliability validation.

The IRF9Z24S family targets high-efficiency, high-reliability power switching in industrial and automotive systems, emphasizing rugged avalanche performance and thermal robustness in surface-mount packages.

FAQ

What is the maximum continuous drain current for IRF9Z24STRRPBF at 100 °C case temperature?

The IRF9Z24STRRPBF supports -7.7 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be applied when ambient or board temperatures exceed 25 °C. Designers should verify junction temperature using R_thJC = 2.5 °C/W and actual power dissipation to ensure T_J remains ≤ 175 °C. The IRF9Z24STRRPBF datasheet confirms this value under standard test conditions with 1"² FR-4 PCB mounting.

Does IRF9Z24STRRPBF have a built-in body diode, and what are its key parameters?

Yes, IRF9Z24STRRPBF integrates a parasitic body diode inherent to its vertical P-channel MOSFET structure. Key parameters include -11 A continuous source-drain current, -6.3 V forward voltage at -11 A and 25 °C, and 100–200 ns reverse recovery time with 320–640 nC recovered charge. These values are measured with V_GS = 0 V and define freewheeling behavior in bridge topologies. The IRF9Z24STRRPBF body diode enables synchronous rectification in certain configurations but is not optimized for ultra-fast recovery.

Can IRF9Z24STRRPBF be used in avalanche mode, and what is its rated energy?

Yes, IRF9Z24STRRPBF is fully avalanche rated per JEDEC JESD24-11. It guarantees 240 mJ single-pulse avalanche energy (E_AS) under specified test conditions (V_DD = -25 V, I_AS = -11 A, T_J = 25 °C), and 6.0 mJ repetitive avalanche energy (E_AR). This ruggedness allows safe operation during inductive switching transients without external protection. The IRF9Z24STRRPBF datasheet validates these ratings with waveform plots and test circuit details in Figures 12a–c.

What is the gate threshold voltage range for IRF9Z24STRRPBF, and how does it affect drive requirements?

The IRF9Z24STRRPBF has a gate-source threshold voltage (V_GS(th)) range of -2.0 V to -4.0 V at I_D = -250 μA. This means reliable enhancement-mode turn-on begins near -2.0 V, but full R_DS(on) specification requires V_GS ≤ -10 V. Designers must ensure gate drivers deliver ≥ -10 V swing with sufficient current to charge 19 nC total gate charge within required switching times. The IRF9Z24STRRPBF's negative threshold simplifies high-side drive but mandates negative or referenced gate bias in some topologies.

Is IRF9Z24STRRPBF RoHS-compliant, and what does the 'PbF' suffix indicate?

Yes, IRF9Z24STRRPBF is RoHS-compliant and lead-free ('PbF' = lead-free). The 'PbF' suffix denotes termination finish compliant with EU Directive 2011/65/EU, with lead content < 0.1 wt% and full halogen-free packaging. This version uses matte tin plating and meets JEDEC J-STD-020 moisture sensitivity level 1. The IRF9Z24STRRPBF conforms to Vishay's material categorization per document 99912 and is suitable for consumer, industrial, and automotive applications requiring environmental compliance.

IRF9Z24STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9Z24STRRPBF FAQ

1.How can I place an order for IRF9Z24STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z24STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z24STRRPBF reliable?

The price and inventory of IRF9Z24STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z24STRRPBF is usually 5 days.

3.What payment methods are accepted for IRF9Z24STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z24STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z24STRRPBF?

IRF9Z24STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z24STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z24STRRPBF?

For technical support, including IRF9Z24STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z24STRRPBF requirements.

6.How does Aetrix verify that IRF9Z24STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF9Z24STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z24STRRPBF meets industry standards.

7.What is the process for return or replacement of IRF9Z24STRRPBF?

All IRF9Z24STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z24STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z24STRRPBF part is unused and in its original packaging.

Return procedure for IRF9Z24STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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