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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9Z30PBF-BE3

Name: IRF9Z30PBF-BE3
Brand: Vishay Siliconix
SKU: IRF9Z30PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z30PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF9Z30PBF-BE3.pdf

Description:: MOSFET P-CH 50V 18A TO220AB

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Product details

Overview

IRF9Z30PBF-BE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -50 V V_DS, 18 A continuous drain current at 25 °C, and 0.14 Ω R_DS(on) at V_GS = -10 V. It delivers fast switching (t_d(off) ≤ 32 ns), low gate charge (Q_g = 39 nC max), and rugged avalanche capability for high-reliability DC-DC converter high-side switches.

For engineers reviewing the IRF9Z30PBF-BE3 datasheet, IRF9Z30PBF-BE3 pinout, IRF9Z30PBF-BE3 application, or IRF9Z30PBF-BE3 equivalent, key selection criteria include verified -50 V blocking voltage, confirmed TO-220AB thermal resistance (R_thJC = 1.7 °C/W), body diode recovery time (t_rr = 120 ns typ), gate threshold range (-2.0 to -4.0 V), and RoHS-compliant lead-free termination.

Technical Context

This device operates as a voltage-controlled unidirectional switch with reverse polarity capability, enabling simplified high-side drive in buck converters and H-bridge motor control without level-shifting circuitry. Its transconductance (g_fs = 4.7 S typ) and low input capacitance (C_iss = 900 pF) support stable gate drive under high-frequency PWM conditions up to 500 kHz.

The integrated body diode exhibits t_rr = 120 ns and Q_rr = 0.47 μC, making it suitable for synchronous rectification replacement where controlled turn-off timing is critical. Thermal design relies on direct case-to-heatsink conduction via the TO-220AB drain-tab mounting surface.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-50 V - Supports 48 V rail systems with 20 % derating margin
R_DS(on) @ V_GS = -10 V	0.14 Ω max - Limits conduction loss to ≤ 46 W at 18 A continuous
Q_g	39 nC max - Enables <1 μs switching with 40 mA gate driver
t_rr	120 ns typ - Reduces cross-conduction risk in synchronous topologies
P_D @ T_C = 25 °C	74 W - Requires heatsink for >5 A sustained operation
T_J Range	-55 to +150 °C - Qualified for industrial ambient environments
I_D @ T_C = 100 °C	-11 A - Defines practical current limit under thermally constrained PCB layout

Pinout & Package

TO-220AB package with isolated tab (drain-connected), 3-pin vertical through-hole configuration. Mounting requires insulating washer when heatsink is grounded.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-current output path / thermal interface	Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits
Gate	Voltage-controlled switch terminal	Receives logic-level or driver signal; requires 20 V absolute max rating protection
Source	Reference node for gate drive and load return	Serves as common return for load current and gate drive loop; defines V_GS reference

Key Features

Feature	Design Value
P-channel topology	Enables high-side switching without bootstrap or isolated gate drive circuitry
Low R_DS(on) × Q_g product	5.46 Ω·nC - Optimized trade-off between conduction and switching losses
Robust avalanche rating	Unclamped inductive energy rating of 3.1 A peak supports motor flyback handling
Body diode softness factor	Q_rr/t_rr = 3.9 A/ns - Minimizes voltage overshoot during diode commutation
RoHS-compliant termination	Lead-free matte tin plating per JEDEC J-STD-609A Class 1

Applications

Motor Control	DC-DC Converters
Use Scenario: Bidirectional 24 V brushed DC motor drive in industrial actuators. IC Role / Device Role / Timing Role: High-side P-channel switch in half-bridge configuration, controlling motor direction via source-follower logic-level gating. Use Value: Eliminates need for high-side level shifter; R_DS(on) ensures <1.5 W conduction loss at 12 A stall current.	Use Scenario: Synchronous buck regulator for FPGA core supply (1.2 V @ 15 A). IC Role / Device Role / Timing Role: High-side switch operating at 300 kHz with 30 ns dead-time control. Use Value: Low Q_g enables clean 10 ns rise/fall edges; t_rr prevents shoot-through during low-side turn-on.
Audio Amplifiers	Power Distribution
Use Scenario: Class-D amplifier output stage driving 4 Ω speakers in automotive infotainment. IC Role / Device Role / Timing Role: Complementary high-side switch paired with N-channel low-side device. Use Value: Matched thermal coefficient ensures balanced channel bias; V_GS(th) tolerance avoids crossover distortion.	Use Scenario: Hot-swap controller for redundant 48 V telecom power feeds. IC Role / Device Role / Timing Role: Inrush-limiting series switch with controlled turn-on via gate resistor network. Use Value: Avalanche rating withstands 50 V transient surges; R_thJC = 1.7 °C/W allows direct heatsink mounting for 100 % duty-cycle operation.

Motor Control

DC-DC Converters

Use Scenario: Bidirectional 24 V brushed DC motor drive in industrial actuators.

IC Role / Device Role / Timing Role: High-side P-channel switch in half-bridge configuration, controlling motor direction via source-follower logic-level gating.

Use Value: Eliminates need for high-side level shifter; R_DS(on) ensures <1.5 W conduction loss at 12 A stall current.

Use Scenario: Synchronous buck regulator for FPGA core supply (1.2 V @ 15 A).

IC Role / Device Role / Timing Role: High-side switch operating at 300 kHz with 30 ns dead-time control.

Use Value: Low Q_g enables clean 10 ns rise/fall edges; t_rr prevents shoot-through during low-side turn-on.

Audio Amplifiers

Power Distribution

Use Scenario: Class-D amplifier output stage driving 4 Ω speakers in automotive infotainment.

IC Role / Device Role / Timing Role: Complementary high-side switch paired with N-channel low-side device.

Use Value: Matched thermal coefficient ensures balanced channel bias; V_GS(th) tolerance avoids crossover distortion.

Use Scenario: Hot-swap controller for redundant 48 V telecom power feeds.

IC Role / Device Role / Timing Role: Inrush-limiting series switch with controlled turn-on via gate resistor network.

Use Value: Avalanche rating withstands 50 V transient surges; R_thJC = 1.7 °C/W allows direct heatsink mounting for 100 % duty-cycle operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9Z34PBF	V_DS = -60 V, R_DS(on) = 0.095 Ω @ -10 V, Q_g = 45 nC	Better voltage margin but higher gate drive demand; same TO-220AB footprint	Select when system transients exceed -50 V or lower R_DS(on) is prioritized over switching speed
SiHF9Z30-E3	Identical electrical specs; SnPb termination instead of matte tin	Not RoHS-compliant; restricted to legacy military/aerospace programs with exemption approval	Choose only if SnPb solder process is mandated and lead-free compliance is waived

Compared with IRF9Z30PBF-BE3, IRF9Z34PBF offers higher voltage rating and lower on-resistance but increases gate drive burden, while SiHF9Z30-E3 provides identical performance with non-RoHS termination-neither is pin-compatible drop-in replacements due to differing qualification and marking requirements.

Availability

IRF9Z30PBF-BE3 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, audio amplifiers, and power distribution systems requiring stable component supply across industrial and telecom equipment lifecycles.

Supply support for IRF9Z30PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal efficiency, and reliability.

The IRF9Z30PBF-BE3 belongs to Vishay's legacy silicon power MOSFET product line, engineered for cost-sensitive industrial power conversion where proven robustness and wide temperature operation outweigh cutting-edge integration.

FAQ

What is the maximum continuous drain current for IRF9Z30PBF-BE3 at 100 °C case temperature?

The IRF9Z30PBF-BE3 supports -11 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-220AB package and must be used for thermal design validation when ambient or heatsink conditions prevent maintaining T_C ≤ 25 °C. The IRF9Z30PBF-BE3 datasheet confirms this rating applies under steady-state conduction with proper heatsinking.

Does IRF9Z30PBF-BE3 have avalanche capability, and how is it rated?

Yes, the IRF9Z30PBF-BE3 is rated for unclamped inductive switching with I_L = -3.1 A peak, defined by its single-pulse avalanche energy capability. This rating is validated per JEDEC JESD24-11 test conditions and ensures survivability during inductive load turn-off without external snubbers. The IRF9Z30PBF-BE3 specification sheet lists this parameter explicitly in the Absolute Maximum Ratings section.

What is the gate threshold voltage range for IRF9Z30PBF-BE3, and why does it matter for logic-level drive?

The IRF9Z30PBF-BE3 has a gate threshold voltage range of -2.0 V to -4.0 V, meaning reliable turn-on begins near -2.0 V and full enhancement occurs above -4.0 V. This range ensures compatibility with standard 5 V and 3.3 V microcontroller outputs when used with appropriate pull-up/pull-down networks. The IRF9Z30PBF-BE3's V_GS(th) spread directly impacts minimum gate drive voltage needed to achieve target R_DS(on).

Can IRF9Z30PBF-BE3 be paralleled with identical units, and what design considerations apply?

Yes, the IRF9Z30PBF-BE3 supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing as junction temperature rises. Key design practices include matched gate drive impedance, symmetrical PCB layout, and individual gate resistors to damp oscillation. The IRF9Z30PBF-BE3 datasheet highlights "Ease of Paralleling" as a key feature, validated across production lots.

Is IRF9Z30PBF-BE3 RoHS-compliant, and what does the '-BE3' suffix indicate?

Yes, IRF9Z30PBF-BE3 is RoHS-compliant with lead-free matte tin plating per JEDEC J-STD-609A Class 1. The '-BE3' suffix denotes Vishay's internal packaging code for tape-and-reel delivery of the Pb-free variant in TO-220AB, distinct from the '-PbF' suffix used for bulk packaging. The IRF9Z30PBF-BE3 part number appears in Vishay's official ordering information tables as the RoHS-compliant version.

IRF9Z30PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 140mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF9Z30PBF-BE3 FAQ

1.How can I place an order for IRF9Z30PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z30PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z30PBF-BE3 reliable?

The price and inventory of IRF9Z30PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z30PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRF9Z30PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z30PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z30PBF-BE3?

IRF9Z30PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z30PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z30PBF-BE3?

For technical support, including IRF9Z30PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z30PBF-BE3 requirements.

6.How does Aetrix verify that IRF9Z30PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRF9Z30PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z30PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRF9Z30PBF-BE3?

All IRF9Z30PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z30PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z30PBF-BE3 part is unused and in its original packaging.

Return procedure for IRF9Z30PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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