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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9Z34

Name: IRF9Z34
Brand: Vishay Siliconix
SKU: IRF9Z34
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z34

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF9Z34.pdf

Description:: MOSFET P-CH 60V 18A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF9Z34 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -60 V drain-source voltage, 18 A continuous drain current at 25 °C, and 0.14 Ω R_DS(on) at V_GS = -10 V. It features repetitive avalanche rating (8.8 mJ), fast switching (18 ns turn-on delay), and 175 °C maximum junction temperature - used in DC-DC synchronous buck converters, motor control H-bridges, and industrial power supply load switches.

For engineers reviewing the IRF9Z34 datasheet, IRF9Z34 pinout, IRF9Z34 application, or IRF9Z34 equivalent, key selection criteria include verified P-channel polarity, TO-220AB thermal performance (R_thJC = 1.7 °C/W), body diode recovery time (100–200 ns), gate charge profile (Q_g = 34 nC), and avalanche energy capability under unclamped inductive switching.

Technical Context

This device operates as a high-side switch in low-voltage DC power systems, leveraging its negative threshold voltage (-2.0 to -4.0 V) and low gate drive requirements. Its dynamic dV/dt rating (-4.5 V/ns) and ruggedized die design support reliable operation in noisy industrial environments with inductive loads.

The MOSFET integrates a co-packaged body diode with V_SD = -6.3 V at -18 A and reverse recovery charge Q_rr = 0.28–0.52 μC, enabling use in freewheeling paths without external diodes in half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage for 24–48 V bus applications
R_DS(on)	0.14 Ω @ V_GS = -10 V - Enables <1.5 W conduction loss at 11 A
Q_g	34 nC - Determines gate driver current requirement (~1.7 A peak for 20 ns rise)
I_D (cont.)	-18 A @ T_C = 25 °C - Supports high-current load switching with heatsink
E_AS	370 mJ - Withstands single-pulse inductive energy without failure
T_J max	+175 °C - Allows operation in sealed enclosures or high-ambient environments
dV/dt	-4.5 V/ns - Resists false triggering during fast voltage transients

Pinout & Package

IRF9Z34 uses the industry-standard TO-220AB package with isolated tab (drain-connected), 3-pin through-hole configuration, and 1.7 °C/W junction-to-case thermal resistance. Mounting torque: 10 lbf·in (1.1 N·m) for M3/6-32 screw.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; requires insulating washer if mounted to grounded heatsink
Gate	Control input for channel inversion	High-impedance node; driven by logic-level or dedicated gate driver with <3.9 Ω internal R_g
Source	Reference terminal for gate drive and current return	Common node for load return path; body diode anode connects here

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 18 A repetitive avalanche current (I_AR) - enables robust short-circuit protection without external crowbar
Dynamic dV/dt rating	-4.5 V/ns immunity - prevents spurious turn-on in high-noise motor drive or SMPS environments
Fast switching	18 ns turn-on delay + 120 ns rise time - reduces switching losses in 100–500 kHz power stages
175 °C operating temperature	Enables derated operation up to 13 A at 100 °C case temperature - suitable for convection-cooled industrial designs
Low R_DS(on)	0.14 Ω at -10 V gate drive - minimizes I²R losses in high-current load-switching applications

Applications

Industrial Motor Control	DC-DC Synchronous Buck Converter
Use Scenario: H-bridge phase-leg switching in 24 V brushless DC motor drivers. IC Role / Device Role / Timing Role: High-side P-channel MOSFET providing controlled current sourcing to motor windings. Use Value: Avalanche rating (8.8 mJ) absorbs inductive kickback during PWM commutation without snubbers.	Use Scenario: Upper switch in non-isolated 12 V → 5 V/3.3 V synchronous buck regulator. IC Role / Device Role / Timing Role: Main power switch controlling duty-cycle-dependent energy transfer to output inductor. Use Value: Low Q_g (34 nC) and fast tr/tf enable efficient 300 kHz operation with minimal gate drive loss.
Programmable Load Switch	Overvoltage Protection Circuit
Use Scenario: Controlled power-up sequencing for FPGA or microcontroller subsystems. IC Role / Device Role / Timing Role: High-side disconnect switch activated via microcontroller GPIO. Use Value: Simple gate drive (V_GS(th) = -2.0 to -4.0 V) allows direct connection to 3.3 V/5 V logic with pull-up resistor.	Use Scenario: Reverse-polarity and overvoltage clamp in 48 V telecom power distribution. IC Role / Device Role / Timing Role: Clamping element triggered by external comparator to shunt excess voltage. Use Value: 175 °C T_J max and 370 mJ E_AS sustain transient surges without thermal runaway.

Industrial Motor Control

DC-DC Synchronous Buck Converter

Use Scenario: H-bridge phase-leg switching in 24 V brushless DC motor drivers.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET providing controlled current sourcing to motor windings.

Use Value: Avalanche rating (8.8 mJ) absorbs inductive kickback during PWM commutation without snubbers.

Use Scenario: Upper switch in non-isolated 12 V → 5 V/3.3 V synchronous buck regulator.

IC Role / Device Role / Timing Role: Main power switch controlling duty-cycle-dependent energy transfer to output inductor.

Use Value: Low Q_g (34 nC) and fast tr/tf enable efficient 300 kHz operation with minimal gate drive loss.

Programmable Load Switch

Overvoltage Protection Circuit

Use Scenario: Controlled power-up sequencing for FPGA or microcontroller subsystems.

IC Role / Device Role / Timing Role: High-side disconnect switch activated via microcontroller GPIO.

Use Value: Simple gate drive (V_GS(th) = -2.0 to -4.0 V) allows direct connection to 3.3 V/5 V logic with pull-up resistor.

Use Scenario: Reverse-polarity and overvoltage clamp in 48 V telecom power distribution.

IC Role / Device Role / Timing Role: Clamping element triggered by external comparator to shunt excess voltage.

Use Value: 175 °C T_J max and 370 mJ E_AS sustain transient surges without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540N	R_DS(on) = 0.20 Ω @ -10 V; Q_g = 54 nC; lower avalanche energy (E_AS = 270 mJ)	Slightly higher conduction loss and slower switching - acceptable where efficiency is secondary to cost	Prefer IRF9Z34 when lower R_DS(on) and faster switching are required in space-constrained layouts.
SiHF9Z34-E3	Same die and specs; lead-free (PbF) variant with matte tin plating per JEDEC J-STD-020	Identical electrical behavior; RoHS-compliant assembly required for EU/China export	Select SiHF9Z34-E3 for new designs requiring RoHS compliance; IRF9Z34 remains valid for legacy SnPb reflow.

Compared with IRF9540N, IRF9Z34 delivers 30 % lower R_DS(on) and 37 % less gate charge - reducing both conduction and switching losses in high-frequency power stages. Against SiHF9Z34-E3, it shares identical silicon but differs only in termination finish and regulatory compliance status.

Availability

IRF9Z34 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC synchronous buck converters, and programmable load switching requiring stable component supply across long-lifecycle production programs.

Supply support for IRF9Z34 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF9Z34 belongs to Vishay's third-generation power MOSFET family, engineered for optimal balance of fast switching, rugged avalanche performance, and low on-resistance in commercial-industrial power conversion.

FAQ

What is the maximum continuous drain current rating for IRF9Z34 at 100 °C case temperature?

The IRF9Z34 supports -13 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits imposed by R_thJC = 1.7 °C/W and package dissipation capacity. Designers must ensure heatsink interface resistance and ambient conditions maintain junction temperature ≤175 °C. The IRF9Z34 datasheet specifies linear derating beyond 25 °C at 0.59 W/°C.

Does IRF9Z34 have a specified body diode reverse recovery time?

Yes, the IRF9Z34 body diode reverse recovery time (t_rr) is specified as 100–200 ns at T_J = 25 °C, I_F = -18 A, and dI/dt = 100 A/μs. This parameter is critical for half-bridge and synchronous rectifier applications where diode commutation losses impact efficiency. The IRF9Z34 also specifies Q_rr = 0.28–0.52 μC, enabling accurate loss estimation in SPICE simulations.

Can IRF9Z34 be driven directly from a 3.3 V microcontroller GPIO?

No - the IRF9Z34 has a gate threshold voltage range of -2.0 to -4.0 V, requiring a negative gate-source bias for full enhancement. A 3.3 V GPIO cannot produce the necessary -10 V gate drive for low R_DS(on). To use IRF9Z34 with 3.3 V logic, a level-shifting gate driver (e.g., TC4427-based inverting stage) or charge pump circuit is required. The IRF9Z34 is not a logic-level MOSFET.

What is the avalanche energy rating of IRF9Z34, and how is it tested?

The IRF9Z34 is rated for 370 mJ single-pulse avalanche energy (E_AS) under test condition: V_DD = -25 V, starting T_J = 25 °C, L = 1.3 mH, R_g = 25 Ω, I_AS = -18 A. This validates safe operation during unclamped inductive switching events like motor stall or relay de-energization. The IRF9Z34 also supports repetitive avalanche at 8.8 mJ per pulse, confirmed per Figure 12c in its datasheet.

Is IRF9Z34 RoHS-compliant?

The base IRF9Z34 ordering variant uses SnPb terminations and is not RoHS-compliant. For RoHS-compliant alternatives, specify IRF9Z34PbF or SiHF9Z34-E3 - both feature lead-free matte tin plating and meet JEDEC J-STD-020 reflow standards. Compliance documentation for IRF9Z34 is detailed in Vishay document 91092, including material categorization per doc# 99912.

IRF9Z34 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 140mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF9Z34 FAQ

1.How can I place an order for IRF9Z34 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z34 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z34 reliable?

The price and inventory of IRF9Z34 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z34 is usually 5 days.

3.What payment methods are accepted for IRF9Z34?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z34 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z34?

IRF9Z34 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z34 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z34?

For technical support, including IRF9Z34 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z34 requirements.

6.How does Aetrix verify that IRF9Z34 is sourced from the original manufacturer or authorized distributors?

All IRF9Z34 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z34 meets industry standards.

7.What is the process for return or replacement of IRF9Z34?

All IRF9Z34 units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z34, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z34 part is unused and in its original packaging.

Return procedure for IRF9Z34:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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