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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9Z34PBF-BE3

Name: IRF9Z34PBF-BE3
Brand: Vishay Siliconix
SKU: IRF9Z34PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z34PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF9Z34PBF-BE3.pdf

Description:: MOSFET P-CH 60V 18A TO220AB

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Product details

Overview

IRF9Z34PBF-BE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -60 V V_DS, 0.14 Ω R_DS(on) at V_GS = -10 V, and -18 A continuous drain current at T_C = 25 °C. It delivers fast switching, repetitive avalanche capability, and operates up to +175 °C junction temperature - ideal for DC-DC synchronous buck converters and high-side load switches in industrial power supplies.

For engineers reviewing the IRF9Z34PBF-BE3 datasheet, IRF9Z34PBF-BE3 pinout, IRF9Z34PBF-BE3 application, or IRF9Z34PBF-BE3 equivalent, key selection criteria include its -60 V blocking voltage, low gate charge (34 nC), robust body diode (t_rr = 100–200 ns), thermal resistance (R_thJC = 1.7 °C/W), and RoHS-compliant lead-free construction.

Technical Context

This device uses third-generation trench-gate silicon technology optimized for low conduction loss and controlled switching behavior. Its negative threshold voltage (-2.0 to -4.0 V) ensures reliable turn-on with standard logic-level gate drivers, while the integrated body diode supports freewheeling in inductive loads without external components.

The IRF9Z34PBF-BE3 features dynamic dV/dt immunity (-4.5 V/ns), enabling stable operation in noisy high-speed switching environments. Its 1.7 °C/W junction-to-case thermal resistance and TO-220AB mechanical design support direct heatsink mounting for sustained 88 W power dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - supports high-side switching in 48 V industrial bus systems with margin
R_DS(on) @ V_GS = -10 V	0.14 Ω - enables <1.5 W conduction loss at -11 A, reducing heatsink requirements
Q_g	34 nC - balances switching speed and driver stress in 100–500 kHz SMPS designs
I_D (continuous)	-18 A @ T_C = 25 °C - suitable for medium-power motor control and hot-swap circuits
E_AS	370 mJ - withstands unclamped inductive energy in relay/snubberless flyback applications
T_J range	-55 to +175 °C - certified for under-hood automotive auxiliary modules and industrial PLCs
t_rr	100–200 ns - limits reverse recovery loss during synchronous rectification

Pinout & Package

IRF9Z34PBF-BE3 is housed in a through-hole TO-220AB package with standard three-terminal layout: Drain (tab), Source (pin 1), Gate (pin 2). The metal tab is electrically connected to the Drain and serves as primary thermal path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-current output terminal / heat sink interface	Electrically tied to metal tab; requires isolation washer when mounted to grounded heatsink
Source (Pin 1)	Reference node for gate drive and current return path	Connected to system ground or floating rail; defines V_GS reference for P-channel operation
Gate (Pin 2)	Control input for channel modulation	Low-input-capacitance node (C_iss = 1100 pF); driven by -10 V for full enhancement

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 8.8 mJ per pulse without derating - eliminates need for external snubbers in inductive switching
Dynamic dV/dt rating	-4.5 V/ns - prevents false turn-on in high-noise motor drive and UPS inverters
Fast switching	td(on) = 18 ns, tr = 120 ns - enables >300 kHz operation in isolated DC-DC converters
175 °C operating temperature	Enables sealed enclosure use without forced air cooling in industrial automation controllers
Low R_thJC	1.7 °C/W - allows 88 W dissipation with ≤50 °C case-to-ambient rise using standard TO-220 heatsink

Applications

Industrial Power Supply	Automotive Body Control Module
Use Scenario: High-side switch for 24 V battery-fed auxiliary loads (e.g., HVAC actuators, lighting relays). IC Role / Device Role / Timing Role: P-channel MOSFET used as load disconnect switch with active-low enable control. Use Value: -60 V rating provides 150 % overvoltage margin against load dump transients; body diode handles inductive kickback without external clamp.	Use Scenario: Reverse-polarity protection and hot-swap control in 12 V infotainment power rails. IC Role / Device Role / Timing Role: High-side protection switch placed between battery and downstream DC-DC converter. Use Value: R_DS(on) = 0.14 Ω limits voltage drop to <2.5 V at 15 A, preserving input regulation; 175 °C rating survives under-dash ambient conditions.
Synchronous Buck Converter	Programmable Current Sink
Use Scenario: Upper switch in non-isolated 48 V → 12 V step-down converter for telecom shelf power. IC Role / Device Role / Timing Role: High-side synchronous rectifier controlled by dedicated gate driver IC. Use Value: Q_g = 34 nC and C_oss = 620 pF enable efficient 250 kHz switching with <1.2 W total gate loss at 15 V drive.	Use Scenario: Precision constant-current source for LED array dimming in architectural lighting controls. IC Role / Device Role / Timing Role: Linear-mode current regulator with op-amp feedback controlling V_GS. Use Value: Low V_GS(th) tolerance (-2.0 to -4.0 V) ensures tight current matching across units; 175 °C rating supports enclosed fixture operation.

Industrial Power Supply

Automotive Body Control Module

Use Scenario: High-side switch for 24 V battery-fed auxiliary loads (e.g., HVAC actuators, lighting relays).

IC Role / Device Role / Timing Role: P-channel MOSFET used as load disconnect switch with active-low enable control.

Use Value: -60 V rating provides 150 % overvoltage margin against load dump transients; body diode handles inductive kickback without external clamp.

Use Scenario: Reverse-polarity protection and hot-swap control in 12 V infotainment power rails.

IC Role / Device Role / Timing Role: High-side protection switch placed between battery and downstream DC-DC converter.

Use Value: R_DS(on) = 0.14 Ω limits voltage drop to <2.5 V at 15 A, preserving input regulation; 175 °C rating survives under-dash ambient conditions.

Synchronous Buck Converter

Programmable Current Sink

Use Scenario: Upper switch in non-isolated 48 V → 12 V step-down converter for telecom shelf power.

IC Role / Device Role / Timing Role: High-side synchronous rectifier controlled by dedicated gate driver IC.

Use Value: Q_g = 34 nC and C_oss = 620 pF enable efficient 250 kHz switching with <1.2 W total gate loss at 15 V drive.

Use Scenario: Precision constant-current source for LED array dimming in architectural lighting controls.

IC Role / Device Role / Timing Role: Linear-mode current regulator with op-amp feedback controlling V_GS.

Use Value: Low V_GS(th) tolerance (-2.0 to -4.0 V) ensures tight current matching across units; 175 °C rating supports enclosed fixture operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9Z34NPBF	Same die, but in Pb-free TO-220AB with NiPdAu plating; identical R_DS(on), Q_g, and avalanche specs	No functional difference; selected where JEDEC J-STD-020 moisture sensitivity level (MSL) compliance is required	Drop-in replacement if board assembly uses lead-free reflow profile and MSL-1 handling
SiHF9Z34-E3	Identical electrical specs; same TO-220AB package but Vishay's alternate part numbering and tape-and-reel packaging	Designed for automated SMT placement lines; same thermal and switching performance	Preferred for high-volume production requiring reel-fed pick-and-place; no layout change needed

Compared with IRF9Z34PBF-BE3, IRF9Z34NPBF offers identical performance with enhanced surface finish for solderability, while SiHF9Z34-E3 provides identical functionality in tape-and-reel format - both eliminate redesign effort but differ in packaging logistics and assembly process compatibility.

Availability

IRF9Z34PBF-BE3 is available at Aetrix Electronics and suitable for industrial power supplies, automotive body electronics, and synchronous DC-DC converters requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for IRF9Z34PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal efficiency, and reliability across automotive, industrial, and computing markets.

The IRF9Z34PBF-BE3 belongs to Vishay's third-generation power MOSFET family engineered for high-efficiency, high-reliability switching in commercial and industrial power conversion - prioritizing low R_DS(on), fast switching, and robust avalanche performance.

FAQ

What is the maximum continuous drain current for IRF9Z34PBF-BE3 at 100 °C case temperature?

The IRF9Z34PBF-BE3 supports -13 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied when heatsink ambient exceeds 50 °C. Designers should verify junction temperature using R_thJC = 1.7 °C/W and actual power dissipation to ensure safe operation within the -55 to +175 °C range.

Does IRF9Z34PBF-BE3 have a built-in body diode, and what are its key parameters?

Yes, IRF9Z34PBF-BE3 integrates a parasitic body diode inherent to its vertical P-channel MOSFET structure. Key parameters include V_SD = -6.3 V at I_S = -18 A and T_J = 25 °C, t_rr = 100–200 ns, and Q_rr = 0.28–0.52 μC. These values enable use in freewheeling paths without external diodes, though designers must account for reverse recovery loss in high-frequency applications.

Is IRF9Z34PBF-BE3 suitable for linear-mode operation, such as in constant-current sinks?

Yes, IRF9Z34PBF-BE3 supports linear-mode operation due to its specified Safe Operating Area (SOA) curve and 175 °C maximum junction temperature. Its R_DS(on) stability over temperature and low gate threshold variation (-2.0 to -4.0 V) allow precise current regulation when used with op-amp feedback. However, power dissipation must remain within SOA limits - e.g., ≤10 W at V_DS = -20 V and I_D = -0.5 A.

What is the gate threshold voltage range for IRF9Z34PBF-BE3, and how does it affect drive requirements?

The gate threshold voltage (V_GS(th)) for IRF9Z34PBF-BE3 is -2.0 V to -4.0 V at I_D = 250 μA. This range ensures reliable turn-on with -5 V logic-level drivers while maintaining noise immunity. For full enhancement and minimal R_DS(on), -10 V gate drive is recommended - achieving 0.14 Ω conduction resistance. Designers must ensure gate driver can sink sufficient current to discharge 34 nC total gate charge quickly.

How does the avalanche rating of IRF9Z34PBF-BE3 impact circuit protection design?

The IRF9Z34PBF-BE3 is repetitively avalanche-rated with E_AR = 8.8 mJ and I_AR = -18 A, allowing it to absorb inductive energy without failure during switching events like relay coil de-energization or motor phase commutation. This eliminates need for external TVS or RC snubbers in many applications, simplifying layout and improving reliability - provided pulse width and duty cycle stay within fig. 11 limits.

IRF9Z34PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 140mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF9Z34PBF-BE3 FAQ

1.How can I place an order for IRF9Z34PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z34PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z34PBF-BE3 reliable?

The price and inventory of IRF9Z34PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z34PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRF9Z34PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z34PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z34PBF-BE3?

IRF9Z34PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z34PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z34PBF-BE3?

For technical support, including IRF9Z34PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z34PBF-BE3 requirements.

6.How does Aetrix verify that IRF9Z34PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRF9Z34PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z34PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRF9Z34PBF-BE3?

All IRF9Z34PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z34PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z34PBF-BE3 part is unused and in its original packaging.

Return procedure for IRF9Z34PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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