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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9Z34S

Name: IRF9Z34S
Brand: Vishay Siliconix
SKU: IRF9Z34S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z34S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9Z34S.pdf

Description:: MOSFET P-CH 60V 18A D2PAK

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Product details

Overview

IRF9Z34S from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -60 V V_DS, 0.14 Ω R_DS(on) at V_GS = -10 V, and -18 A continuous drain current at T_C = 25 °C. It delivers fast switching, full avalanche ruggedness, and 175 °C operation-ideal for high-efficiency DC-DC synchronous rectification and motor control H-bridge high-side switches.

For engineers reviewing the IRF9Z34S datasheet, IRF9Z34S pinout, IRF9Z34S application, or IRF9Z34S equivalent, key selection considerations include its -60 V blocking capability, low gate charge (34 nC), body diode recovery performance (t_rr = 100–200 ns), thermal resistance (R_thJC = 1.7 °C/W), and surface-mount D2PAK footprint compatibility with high-power PCB layouts.

Technical Context

This device employs Vishay's third-generation silicon process to achieve low on-resistance per die area while maintaining robust avalanche energy rating (E_AS = 370 mJ) and fast turn-on/turn-off times (t_d(on) = 18 ns, t_f = 58 ns). Its P-channel topology enables high-side switching without level-shifting circuitry in buck converters and load-switch applications.

The D2PAK package provides low junction-to-case thermal resistance (1.7 °C/W) and supports up to 88 W power dissipation at T_C = 25 °C. The integral body diode exhibits V_SD = -6.3 V at I_S = -18 A and controlled dV/dt immunity (-4.5 V/ns peak diode recovery).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Supports 48 V bus systems with 20 % derating margin
R_DS(on) @ V_GS = -10 V	0.14 Ω - Enables <1.5 W conduction loss at 11 A DC load
Q_g (max)	34 nC - Determines gate driver current requirement (~1.7 A peak for 20 ns rise)
I_D (continuous, T_C = 25 °C)	-18 A - Sustains high-current loads with minimal heatsinking when mounted on 1"² FR-4
E_AS	370 mJ - Withstands unclamped inductive switching events in motor drive freewheeling paths
R_thJC	1.7 °C/W - Allows direct thermal coupling to heatsink for >50 W steady-state power handling
t_rr	100–200 ns - Limits reverse recovery losses during synchronous rectification commutation

Pinout & Package

D2PAK (TO-263) package with exposed drain tab for thermal and electrical connection; 3-pin surface-mount outline conforming to JEDEC TO-263AB standard; thermal pad requires solder paste stencil design per Vishay AN826 recommended pads.

Pin/Terminal	Circuit Role	Design Meaning
Tab / Pin 2 (Drain)	Power Drain Terminal	Electrically and thermally connected to internal die drain; must be soldered to large copper pour or heatsink
Pin 1 (Source)	Power Source Terminal	Reference node for gate drive; carries full load current in high-side configuration
Pin 3 (Gate)	Control Input	High-impedance MOS gate requiring <100 nA leakage; driven negative relative to source for turn-on

Key Features

Feature	Design Value
Fully avalanche rated	370 mJ single-pulse E_AS ensures reliability under inductive switching stress without external snubbers
175 °C maximum junction temperature	Enables operation in sealed enclosures or high-ambient industrial environments without derating
Low Q_gd/Q_g ratio (16/34 nC)	Reduces Miller-induced shoot-through risk in bridge configurations and improves dv/dt immunity
Fast body diode recovery (t_rr ≤ 200 ns)	Minimizes voltage overshoot and ringing during freewheeling in synchronous buck topologies
D2PAK thermal performance	1.7 °C/W R_thJC enables >50 W continuous power dissipation with minimal heatsink volume

Applications

Industrial Motor Control	48 V DC-DC Converters
Use Scenario: High-side switch in half-bridge BLDC motor gate driver stage operating from 48 V bus. IC Role / Device Role / Timing Role: P-channel high-side MOSFET providing controlled turn-on/turn-off of upper leg with no bootstrap complexity. Use Value: Eliminates need for isolated gate drivers or charge pumps; leverages -60 V rating and 175 °C operation for compact, thermally robust motor control modules.	Use Scenario: Synchronous rectifier in non-isolated buck converter for telecom power supply delivering 12 V/15 A output. IC Role / Device Role / Timing Role: Low-R_DS(on) P-channel switch replacing Schottky diode to reduce conduction losses during low-side conduction phase. Use Value: Achieves >92 % efficiency at full load via 0.14 Ω R_DS(on) and fast t_f = 58 ns, minimizing dead-time losses.
Automotive Body Electronics	Programmable Load Switches
Use Scenario: Reverse polarity protection and load disconnect in 24 V commercial vehicle lighting control module. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode with gate driven by microcontroller GPIO. Use Value: Provides <100 μA IDSS leakage and -6.3 V V_SD body diode forward drop for low-loss reverse-battery protection.	Use Scenario: Hot-swap and inrush current limiting for FPGA or ASIC power rail sequencing. IC Role / Device Role / Timing Role: High-current, thermally robust load switch enabling controlled ramp-up of capacitive loads. Use Value: Supports -72 A pulsed current (IDM) and dissipates 88 W at T_C = 25 °C, allowing safe turn-on into 10,000 μF bulk capacitance.

Industrial Motor Control

48 V DC-DC Converters

Use Scenario: High-side switch in half-bridge BLDC motor gate driver stage operating from 48 V bus.

IC Role / Device Role / Timing Role: P-channel high-side MOSFET providing controlled turn-on/turn-off of upper leg with no bootstrap complexity.

Use Value: Eliminates need for isolated gate drivers or charge pumps; leverages -60 V rating and 175 °C operation for compact, thermally robust motor control modules.

Use Scenario: Synchronous rectifier in non-isolated buck converter for telecom power supply delivering 12 V/15 A output.

IC Role / Device Role / Timing Role: Low-R_DS(on) P-channel switch replacing Schottky diode to reduce conduction losses during low-side conduction phase.

Use Value: Achieves >92 % efficiency at full load via 0.14 Ω R_DS(on) and fast t_f = 58 ns, minimizing dead-time losses.

Automotive Body Electronics

Programmable Load Switches

Use Scenario: Reverse polarity protection and load disconnect in 24 V commercial vehicle lighting control module.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode with gate driven by microcontroller GPIO.

Use Value: Provides <100 μA IDSS leakage and -6.3 V V_SD body diode forward drop for low-loss reverse-battery protection.

Use Scenario: Hot-swap and inrush current limiting for FPGA or ASIC power rail sequencing.

IC Role / Device Role / Timing Role: High-current, thermally robust load switch enabling controlled ramp-up of capacitive loads.

Use Value: Supports -72 A pulsed current (IDM) and dissipates 88 W at T_C = 25 °C, allowing safe turn-on into 10,000 μF bulk capacitance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHF9Z34STRL-GE3	Same silicon die and D2PAK package; RoHS-compliant, halogen-free, tape-and-reel packaging	Identical electrical specs; preferred for automated SMT assembly and environmental compliance programs	Select SiHF9Z34STRL-GE3 for new designs requiring lead-free/halogen-free certification and volume reel delivery
IRF9Z34PbF	Same die and D2PAK package but with lead (Pb)-terminations; not RoHS-compliant	Matches IRF9Z34S performance but restricted to legacy or non-RoHS applications	Choose IRF9Z34PbF only where Pb-based terminations are explicitly required and regulatory exemptions apply

Compared with IRF9Z34S, SiHF9Z34STRL-GE3 offers identical electrical behavior with enhanced environmental compliance and packaging for modern SMT lines, while IRF9Z34PbF serves niche legacy systems requiring Pb terminations-neither is pin-compatible by default unless board layout matches D2PAK mechanical footprint and thermal pad design.

Availability

IRF9Z34S is available at Aetrix Electronics and suitable for industrial motor control, 48 V DC-DC conversion, and automotive body electronics requiring stable component supply across extended product lifecycles.

Supply support for IRF9Z34S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and thermal reliability.

The IRF9Z34S belongs to Vishay's third-generation power MOSFET family engineered for high-current, high-temperature switching in industrial and automotive power systems where avalanche tolerance and low R_DS(on) are critical.

FAQ

What is the maximum continuous drain current rating for IRF9Z34S at 100 °C case temperature?

The IRF9Z34S supports -13 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating from -18 A at 25 °C reflects thermal limitations of the D2PAK package and must be verified against actual board-level thermal resistance (R_thJA ≤ 40 °C/W) and ambient conditions in the final design. The IRF9Z34S datasheet confirms this value under standard test conditions with 1"² FR-4 PCB mounting.

Does IRF9Z34S have a fully rated avalanche capability, and what is the single-pulse energy limit?

Yes, the IRF9Z34S is fully avalanche rated with a single-pulse avalanche energy (E_AS) of 370 mJ, measured under standardized test conditions (V_DD = -25 V, I_AS = -18 A, T_J starting at 25 °C). This rating is validated per Vishay's test methodology and applies directly to the IRF9Z34S part number-not extrapolated from similar devices. The IRF9Z34S withstands repetitive avalanche events up to 8.8 mJ per pulse.

What is the gate threshold voltage range for IRF9Z34S, and how does it affect logic-level drive compatibility?

The IRF9Z34S has a gate-source threshold voltage (V_GS(th)) range of -2.0 V to -4.0 V at I_D = -250 μA, meaning it begins conducting significantly below -3 V. While not classified as a "logic-level" MOSFET, the IRF9Z34S can be partially enhanced with -5 V gate drive but requires -10 V for full R_DS(on) specification (0.14 Ω). For reliable switching, the IRF9Z34S should be driven with ≥ -10 V gate-source voltage in production circuits.

How does the body diode performance of IRF9Z34S impact its use in synchronous rectification?

The IRF9Z34S body diode exhibits V_SD = -6.3 V at I_S = -18 A and reverse recovery time t_rr = 100–200 ns, which directly influences synchronous rectifier efficiency and EMI. In buck converter applications, this diode conducts during dead time; its fast recovery minimizes voltage spikes and reduces switching losses compared to slower diodes. The IRF9Z34S datasheet specifies these values under controlled dI/dt = 100 A/μs conditions, confirming suitability for medium-frequency (<500 kHz) synchronous rectification.

What is the thermal resistance from junction to case (R_thJC) for IRF9Z34S, and how should it be used in heatsink design?

The IRF9Z34S has a maximum junction-to-case thermal resistance (R_thJC) of 1.7 °C/W, measured from the silicon die to the exposed drain tab. This value enables precise heatsink sizing: for example, to maintain T_J ≤ 150 °C at 50 W power dissipation with T_C = 85 °C, the required heatsink-to-ambient resistance must be ≤ (150 − 85)/50 = 1.3 °C/W. The IRF9Z34S D2PAK thermal pad must be fully soldered using Vishay-recommended pad geometry (AN826) to realize this R_thJC.

IRF9Z34S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 140mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9Z34S FAQ

1.How can I place an order for IRF9Z34S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z34S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z34S reliable?

The price and inventory of IRF9Z34S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z34S is usually 5 days.

3.What payment methods are accepted for IRF9Z34S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z34S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z34S?

IRF9Z34S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z34S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z34S?

For technical support, including IRF9Z34S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z34S requirements.

6.How does Aetrix verify that IRF9Z34S is sourced from the original manufacturer or authorized distributors?

All IRF9Z34S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z34S meets industry standards.

7.What is the process for return or replacement of IRF9Z34S?

All IRF9Z34S units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z34S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z34S part is unused and in its original packaging.

Return procedure for IRF9Z34S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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