Vishay Siliconix IRF9Z34SPBF

Overview

IRF9Z34SPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -60 V V_DS, 18 A continuous drain current at T_C = 25 °C, 0.14 Ω R_DS(on) at V_GS = -10 V, and fully avalanche-rated to 370 mJ. It serves as a high-efficiency high-side switch in DC-DC converters, motor control H-bridges, and industrial power supplies.

For engineers reviewing the IRF9Z34SPBF datasheet, IRF9Z34SPBF pinout, IRF9Z34SPBF application, or IRF9Z34SPBF equivalent, key selection criteria include its -60 V blocking capability, low gate charge (34 nC), fast switching (18 ns turn-on delay), rugged unclamped inductive switching performance, and 175 °C junction temperature rating for thermally demanding environments.

Technical Context

This device uses Vishay's third-generation silicon process to achieve low on-resistance per die area while maintaining fast switching and robust avalanche energy handling. Its P-channel topology enables high-side configuration without level-shifting circuitry in buck regulators and load switches.

The D2PAK package provides low thermal resistance (R_thJC = 1.7 °C/W) and high power dissipation (88 W at T_C = 25 °C), supporting high-current operation with minimal heatsinking. The integral body diode has t_rr = 100–200 ns and Q_rr = 280–520 nC, suitable for synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (Drain, Gate, Source) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper pour.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IRF9Z34SPBF, IRF9Z34NLPBF trades surface-mount convenience and lower thermal resistance for through-hole robustness, while SiHF9Z34STRL-GE3 delivers identical electrical and thermal performance with environmentally compliant packaging-making it the preferred drop-in replacement for RoHS-aligned production.

Availability

IRF9Z34SPBF is available at Aetrix Electronics and suitable for industrial motor control, DC-DC power conversion, and hot-swap power distribution requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF9Z34SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRF9Z34SPBF belongs to Vishay's third-generation power MOSFET family, engineered for high-current, high-temperature switching in space-constrained industrial power systems where avalanche ruggedness and thermal stability are critical.

FAQ

What is the maximum continuous drain current rating for IRF9Z34SPBF at 100 °C case temperature?

The IRF9Z34SPBF supports -13 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be verified against actual PCB copper area and airflow conditions. Designers should reference Figure 9 ("Maximum Drain Current vs. Case Temperature") in the Vishay datasheet S21-0943 for precise derating curves. The IRF9Z34SPBF maintains full functionality across this range without parameter shift.

Does IRF9Z34SPBF have a built-in body diode, and what are its key parameters?

Yes, the IRF9Z34SPBF integrates a parasitic body diode inherent to its vertical P-channel MOSFET structure. Key parameters include V_SD = -6.3 V at I_S = -18 A and T_J = 25 °C, reverse recovery time t_rr = 100–200 ns, and Q_rr = 280–520 nC. These values are measured under standardized conditions (I_F = -18 A, dI/dt = 100 A/μs) and enable predictable freewheeling behavior in half-bridge and synchronous rectifier topologies using the IRF9Z34SPBF.

Is IRF9Z34SPBF suitable for avalanche energy handling in inductive load switching?

Yes, the IRF9Z34SPBF is fully avalanche rated with a single-pulse avalanche energy (E_AS) of 370 mJ under defined test conditions (V_DD = -25 V, I_AS = -18 A). This specification is validated per JEDEC standards and allows safe operation in relay driving, solenoid control, and motor commutation where inductive kickback occurs. The IRF9Z34SPBF does not require external clamping circuits for these applications when operated within its rated E_AS envelope.

What is the gate threshold voltage range for IRF9Z34SPBF, and how does it affect drive requirements?

The IRF9Z34SPBF has a gate-source threshold voltage (V_GS(th)) range of -2.0 V to -4.0 V at I_D = -250 μA, indicating it is a standard-level P-channel MOSFET requiring negative gate bias for turn-on. Full enhancement (R_DS(on) = 0.14 Ω) is achieved at V_GS = -10 V. Drive circuits must deliver sufficient negative voltage swing and current (Q_g = 34 nC) to ensure fast, low-loss switching-confirming that the IRF9Z34SPBF is not logic-level compatible without level-shifting.

How does the D2PAK package of IRF9Z34SPBF compare thermally to TO-220 alternatives?

The D2PAK package of the IRF9Z34SPBF achieves a maximum junction-to-case thermal resistance (R_thJC) of 1.7 °C/W, compared to ~2.0–2.5 °C/W for typical TO-220 packages. This 15–30 % improvement enables higher power density and reduced heatsink size in surface-mount designs. The exposed drain pad in the D2PAK allows direct thermal coupling to PCB copper, making the IRF9Z34SPBF especially effective in thermally constrained industrial layouts where TO-220 alternatives would require additional mechanical mounting hardware.