Vishay Siliconix IRF9Z34STRL

Overview

IRF9Z34STRL from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -60 V drain-source voltage, 18 A continuous drain current at 25 °C, and 0.14 Ω R_DS(on) at V_GS = -10 V. It operates up to 175 °C junction temperature and is fully avalanche rated, designed for high-efficiency DC-DC conversion and motor control in industrial power supplies.

For engineers reviewing the IRF9Z34STRL datasheet, IRF9Z34STRL pinout, IRF9Z34STRL application, or IRF9Z34STRL equivalent, key selection criteria include its -60 V rating, low on-resistance with fast switching (18 ns turn-on delay), rugged unclamped inductive switching capability (370 mJ E_AS), and surface-mount D2PAK thermal performance (R_thJC = 1.7 °C/W).

Technical Context

This device uses Vishay's third-generation silicon process to achieve low R_DS(on) per die area while maintaining fast switching (t_r = 120 ns, t_f = 58 ns) and robust avalanche energy handling (E_AS = 370 mJ). Its gate charge profile (Q_g = 34 nC, Q_gd = 16 nC) supports efficient hard-switching in synchronous buck and H-bridge topologies.

The integrated body diode exhibits t_rr = 100–200 ns and Q_rr = 280–520 nC at 25 °C, enabling moderate-frequency freewheeling in non-synchronous converters. Thermal design leverages the D2PAK's low junction-to-case resistance (1.7 °C/W) and 88 W power dissipation capability at T_C = 25 °C.

Key Specifications

Pinout & Package

D2PAK (TO-263) package with exposed drain tab for thermal and electrical connection; 3-pin surface-mount outline conforming to JEDEC TO-263AB standard; thermal pad requires soldered PCB copper area for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IRF9Z34STRL, SiHF9Z34STRL-GE3 offers identical performance with environmental compliance, while IRF9Z34PbF maintains legacy solderability at minor thermal cost-neither is pin-compatible with non-D2PAK variants like TO-220 versions.

Availability

IRF9Z34STRL is available at Aetrix Electronics and suitable for industrial DC-DC converters, high-side load switches, and motor drive half-bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF9Z34STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF9Z34STRL belongs to Vishay's third-generation power MOSFET family, engineered for high-efficiency, high-power-density switching in demanding power conversion and load management applications.

FAQ

What is the maximum continuous drain current rating for IRF9Z34STRL at 100 °C case temperature?

The IRF9Z34STRL supports -13 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package; designers must ensure adequate heatsinking to maintain case temperature below this threshold for sustained operation. The IRF9Z34STRL's 1.7 °C/W junction-to-case thermal resistance enables this current level with ≤22 °C temperature rise across the thermal interface.

Does IRF9Z34STRL have a built-in body diode, and what are its key recovery characteristics?

Yes, the IRF9Z34STRL integrates a parasitic body diode inherent to its vertical P-channel MOSFET structure. At T_J = 25 °C, its reverse recovery time (t_rr) is 100–200 ns and reverse recovery charge (Q_rr) is 280–520 nC under IF = -18 A and dI/dt = 100 A/μs conditions. These values are critical for snubberless operation in non-synchronous buck converters and must be accounted for in gate driver timing to avoid shoot-through.

What is the gate threshold voltage range for IRF9Z34STRL, and how does it affect drive requirements?

The IRF9Z34STRL has a gate-source threshold voltage (V_GS(th)) range of -2.0 V to -4.0 V at I_D = -250 μA. This means the device begins conducting significantly above -2.0 V and is fully enhanced near -4.0 V. To achieve specified R_DS(on) = 0.14 Ω, a V_GS of -10 V is required. Therefore, the IRF9Z34STRL is not a logic-level MOSFET and needs a dedicated gate driver or level-shifting circuit when driven from 3.3 V or 5 V microcontrollers.

Can IRF9Z34STRL be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the IRF9Z34STRL is fully avalanche rated with a specified single-pulse avalanche energy (E_AS) of 370 mJ under test conditions of V_DD = -25 V, starting T_J = 25 °C, L = 1.3 mH, and R_g = 25 Ω. This rating validates its use in circuits subject to inductive energy dissipation-such as relay driving or motor phase switching-without requiring external clamping diodes, provided pulse width and duty cycle remain within safe operating area limits defined in the datasheet.

What is the recommended PCB layout for thermal management of IRF9Z34STRL in D2PAK package?

For optimal thermal performance, the IRF9Z34STRL's exposed drain tab must be soldered to a minimum 1.0" × 1.0" (25.4 mm × 25.4 mm) copper area on the PCB, preferably with ≥4 thermal vias (0.3 mm diameter, spaced ≤2 mm apart) connecting to inner or backside ground planes. The recommended pad dimensions per Vishay AN826 are 0.420" × 0.355" (10.67 mm × 9.02 mm) for the main tab, with 0.135" (3.43 mm) clearance to adjacent traces. This layout achieves the specified R_thJC = 1.7 °C/W and prevents localized overheating during 18 A operation.