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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFB11N50A

Name: IRFB11N50A
Brand: Vishay Siliconix
SKU: IRFB11N50A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB11N50A

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB11N50A.pdf

Description:: MOSFET N-CH 500V 11A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB11N50A from Vishay Siliconix is a 500 V, 11 A N-channel power MOSFET in TO-220AB package, featuring 0.52 Ω R_DS(on) at V_GS = 10 V, 52 nC total gate charge, and 275 mJ single-pulse avalanche energy - designed for high-voltage switching in offline SMPS topologies including two-transistor forward and PFC boost converters.

For engineers reviewing the IRFB11N50A datasheet, IRFB11N50A pinout, IRFB11N50A application, or IRFB11N50A equivalent, key selection criteria include its 500 V V_DS, rugged avalanche capability, low Q_g/Q_gd ratio for fast switching, and validated performance under dV/dt stress up to 6.9 V/ns in high-speed power conversion designs.

Technical Context

This MOSFET employs planar vertical DMOS technology with fully characterized C_iss (1423 pF), C_oss (208 pF), and C_rss (8.1 pF) enabling accurate snubber and gate drive design. Its 2.0–4.0 V gate threshold voltage ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

The device integrates an intrinsic body diode with 510–770 ns reverse recovery time and 3.4–5.1 µC Q_rr, supporting hard-switched topologies where diode commutation is critical. Thermal resistance R_thJC of 0.75 °C/W enables high-power operation with proper heatsinking at TC = 100 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in 400 V DC bus applications without derating
R_DS(on)	0.52 Ω @ V_GS = 10 V - limits conduction loss to ≤ 38 W at 11 A continuous drain current
Q_g	52 nC - determines gate driver current requirement (~5.2 mA avg. for 1 MHz switching)
E_AS	275 mJ - enables unclamped inductive switching survival up to I_AS = 11 A with L = 4.5 mH
dV/dt rating	6.9 V/ns - withstands high dv/dt transients during hard switching without spurious turn-on
T_J range	−55 to +150 °C - supports industrial and telecom power supply operation across full ambient range

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, 1.6 mm creepage distance, and 10 lbf·in (1.1 N·m) mounting torque specification.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal requiring ≤ ±30 V bias; 13 nC Q_gs defines Miller plateau duration
D	Drain	Main high-side power terminal; electrically connected to metal tab for thermal path and EMI shielding
S	Source	Power return and reference node for gate drive; ties to PCB ground plane for low-inductance switching

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio	52 nC / 18 nC = 2.89 - reduces Miller-induced switching delay and improves controllability in high-dV/dt environments
Fully characterized C_oss	208 pF @ V_DS = 25 V, 55 pF @ V_DS = 400 V - enables precise resonant timing and ZVS design in LLC converters
Avalanche-rated	275 mJ single-pulse, 17 mJ repetitive - eliminates need for external clamping in flyback and forward converter snubbers
Body diode Q_rr	3.4–5.1 µC - minimizes commutation loss during synchronous rectification or freewheeling phases

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in 500 W offline two-transistor forward converter operating from 375 V DC bus. IC Role / Device Role / Timing Role: High-voltage power switch controlling transformer energy transfer during PWM on-time. Use Value: 500 V V_DS and 275 mJ E_AS ensure safe operation during line surges and transformer leakage inductance spikes.	Use Scenario: Inverter stage H-bridge switch in 3 kVA double-conversion UPS with 400 V DC link. IC Role / Device Role / Timing Role: Fast-turning N-channel switch handling bidirectional power flow during battery backup mode. Use Value: 6.9 V/ns dV/dt rating prevents false triggering during rapid bus polarity reversal under load transients.
Power Factor Correction (PFC) Boost	High-Speed Industrial Motor Drive
Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for server PSU. IC Role / Device Role / Timing Role: High-duty-cycle switching element shaping input current waveform to match AC voltage. Use Value: 0.52 Ω R_DS(on) limits conduction loss at 11 A RMS, while 52 nC Q_g enables efficient 100 kHz operation.	Use Scenario: Half-bridge high-side switch in 2 kW servo drive with regenerative braking. IC Role / Device Role / Timing Role: Controlled turn-off device managing inductive kickback during dynamic braking. Use Value: Body diode t_rr = 510–770 ns and Q_rr = 3.4–5.1 µC reduce voltage overshoot and snubber losses during regeneration.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in 500 W offline two-transistor forward converter operating from 375 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch controlling transformer energy transfer during PWM on-time.

Use Value: 500 V V_DS and 275 mJ E_AS ensure safe operation during line surges and transformer leakage inductance spikes.

Use Scenario: Inverter stage H-bridge switch in 3 kVA double-conversion UPS with 400 V DC link.

IC Role / Device Role / Timing Role: Fast-turning N-channel switch handling bidirectional power flow during battery backup mode.

Use Value: 6.9 V/ns dV/dt rating prevents false triggering during rapid bus polarity reversal under load transients.

Power Factor Correction (PFC) Boost

High-Speed Industrial Motor Drive

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for server PSU.

IC Role / Device Role / Timing Role: High-duty-cycle switching element shaping input current waveform to match AC voltage.

Use Value: 0.52 Ω R_DS(on) limits conduction loss at 11 A RMS, while 52 nC Q_g enables efficient 100 kHz operation.

Use Scenario: Half-bridge high-side switch in 2 kW servo drive with regenerative braking.

IC Role / Device Role / Timing Role: Controlled turn-off device managing inductive kickback during dynamic braking.

Use Value: Body diode t_rr = 510–770 ns and Q_rr = 3.4–5.1 µC reduce voltage overshoot and snubber losses during regeneration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK50ZFP	500 V, 12 A, R_DS(on) = 0.52 Ω, Q_g = 45 nC, Zener-protected gate	Lower Q_g improves efficiency at >200 kHz but lacks specified dV/dt rating	Preferred for high-frequency PFC where gate drive loss dominates; verify layout immunity to oscillation without dV/dt spec
IXTH12N50L	500 V, 12 A, R_DS(on) = 0.48 Ω, Q_g = 58 nC, logic-level compatible (V_GS(th) = 2.0–3.5 V)	Lower R_DS(on) reduces conduction loss but higher Q_g increases switching loss above 100 kHz	Better for low-frequency, high-current SMPS; requires gate driver capable of ≥ 12 V for full enhancement

Compared with STP12NK50ZFP and IXTH12N50L, the IRFB11N50A offers superior dV/dt ruggedness (6.9 V/ns) and documented avalanche energy (275 mJ), making it more suitable for unclamped inductive switching in offline topologies where transient robustness is prioritized over ultra-high-frequency efficiency.

Availability

IRFB11N50A is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed industrial motor drives requiring stable component supply and long-term lifecycle support.

Supply support for IRFB11N50A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRFB11N50A belongs to Vishay's high-voltage planar MOSFET product line, engineered for rugged offline power conversion where avalanche capability, dV/dt immunity, and consistent parametric stability across temperature are critical.

FAQ

What is the maximum continuous drain current for IRFB11N50A at 100 °C case temperature?

The IRFB11N50A supports 7.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating from the 11 A rating at 25 °C reflects thermal limitations of the TO-220AB package and must be applied when heatsink temperature exceeds 25 °C. Designers should verify junction temperature using R_thJC = 0.75 °C/W and actual power dissipation in their layout.

Does IRFB11N50A have a built-in gate protection diode?

No, the IRFB11N50A does not integrate a gate protection Zener diode. Its gate-source voltage rating is ±30 V, and external gate clamping (e.g., 18 V Zener) is recommended in noisy environments or when driving with high-impedance sources. The datasheet specifies only gate leakage current (±100 nA at ±30 V), confirming absence of internal protection circuitry.

Can IRFB11N50A be used in synchronous rectification applications?

The IRFB11N50A is not optimized for synchronous rectification due to its body diode's relatively high V_SD (1.5 V) and Q_rr (3.4–5.1 µC), which increase conduction and switching losses compared to dedicated SR MOSFETs. While functional in low-frequency freewheeling roles, its 500 V rating and 0.52 Ω R_DS(on) make it better suited for primary-side switching than secondary-side rectification in most designs.

What is the typical output capacitance C_oss of IRFB11N50A at 400 V drain-source voltage?

The typical output capacitance C_oss of IRFB11N50A is 55 pF at V_DS = 400 V and f = 1.0 MHz, per the Specifications table on page 2 of the datasheet. This value is critical for calculating turn-off loss and designing resonant tanks in LLC or soft-switching topologies, where C_oss directly affects dead-time requirements and ZVS boundary conditions.

Is IRFB11N50A RoHS-compliant and halogen-free?

Yes, the ordering variant IRFB11N50APbF-BE3 is both RoHS-compliant and halogen-free, as confirmed in the Ordering Information section. The "-BE3" suffix denotes lead (Pb)-free and halogen-free construction, while "PbF" alone indicates Pb-free only. Both variants meet JEDEC JS709B and IPC-1752A material declarations for restricted substances.

IRFB11N50A Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 520mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1423 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB11N50A FAQ

1.How can I place an order for IRFB11N50A through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB11N50A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB11N50A reliable?

The price and inventory of IRFB11N50A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB11N50A is usually 5 days.

3.What payment methods are accepted for IRFB11N50A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB11N50A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB11N50A?

IRFB11N50A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB11N50A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB11N50A?

For technical support, including IRFB11N50A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB11N50A requirements.

6.How does Aetrix verify that IRFB11N50A is sourced from the original manufacturer or authorized distributors?

All IRFB11N50A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB11N50A meets industry standards.

7.What is the process for return or replacement of IRFB11N50A?

All IRFB11N50A units undergo pre-shipment inspection (PSI). If there is an issue with IRFB11N50A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB11N50A part is unused and in its original packaging.

Return procedure for IRFB11N50A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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