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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFB11N50APBF-BE3

Name: IRFB11N50APBF-BE3
Brand: Vishay Siliconix
SKU: IRFB11N50APBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB11N50APBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB11N50APBF-BE3.pdf

Description:: MOSFET N-CH 500V 11A TO220AB

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Product details

Overview

IRFB11N50APBF-BE3 from Vishay Siliconix is a 500 V, 11 A N-channel power MOSFET in TO-220AB package, featuring 0.52 Ω R_DS(on) at V_GS = 10 V, 52 nC total gate charge, and 275 mJ single-pulse avalanche energy - designed for high-voltage switching in offline SMPS topologies including PFC boost and full-bridge converters.

For engineers reviewing the IRFB11N50APBF-BE3 datasheet, IRFB11N50APBF-BE3 pinout, IRFB11N50APBF-BE3 application, or IRFB11N50APBF-BE3 equivalent, key selection criteria include its 500 V V_DS, robust dV/dt ruggedness (6.9 V/ns), low Q_g/Q_gd ratio for fast switching, and validated unclamped inductive avalanche capability up to 11 A.

Technical Context

This MOSFET employs planar vertical DMOS technology with fully characterized C_iss (1423 pF), C_oss (208 pF), and Cr_ss (8.1 pF) to support precise snubber design and EMI prediction in hard-switched topologies. Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

The device integrates a co-packaged body diode with 510–770 ns reverse recovery time and 3.4–5.1 μC Q_rr, enabling operation in synchronous rectification and freewheeling roles where controlled diode recovery is critical. Thermal resistance R_thJC is specified at 0.75 °C/W, supporting 170 W continuous dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports 400 V DC bus designs with 25 % margin for line surges and ringing in offline SMPS
R_DS(on) @ 10 V	0.52 Ω - enables ≤ 0.6 W conduction loss at 11 A, suitable for medium-power PFC stages
Q_g / Q_gd	52 nC / 18 nC - low Q_gd/Q_g ratio (34.6 %) improves switching speed and reduces Miller-induced shoot-through risk
E_AS	275 mJ - validated single-pulse avalanche energy allows safe operation during inductive turn-off transients without external clamping
dV/dt rating	6.9 V/ns - ensures stable operation under high dv/dt stress in bridge configurations without spurious turn-on
T_J range	−55 to +150 °C - supports industrial and telecom power supplies operating in extended ambient environments

Pinout & Package

IRFB11N50APBF-BE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), optimized for heatsink mounting and high-current PCB routing. The package meets JEDEC TO-220 standards and supports 10 lbf·in (1.1 N·m) mounting torque.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; 13 nC Q_gs enables simple gate driver sizing with <3.2 Ω R_g
D (Drain)	High-side power switch node	Connected to TO-220 tab; electrically isolated but thermally coupled - requires insulating pad when mounted to common heatsink
S (Source)	Power return and reference	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery current

Key Features

Feature	Design Value
Low Q_g (52 nC)	Reduces gate drive power and enables use of low-cost, low-current drivers in high-frequency SMPS
Fully characterized C_oss & Cr_ss	Enables accurate calculation of turn-off losses and snubber component selection across 1–400 V V_DS range
Improved dynamic dV/dt ruggedness	Prevents false turn-on during high-speed switching in half/full-bridge circuits without requiring negative gate bias
Validated avalanche capability	Supports reliable operation in unclamped inductive switching (e.g., relay driving, motor phase control) without external protection

Applications

Power Factor Correction Boost Converter	Two-Transistor Forward Converter
Use Scenario: High-efficiency AC/DC front-end stage converting universal input (85–265 VAC) to 400 V DC bus with >95 % efficiency. IC Role / Device Role / Timing Role: Main switching element handling 11 A peak current at 50–200 kHz, synchronized to PFC controller. Use Value: 0.52 Ω R_DS(on) minimizes conduction loss at high duty cycles; 275 mJ E_AS absorbs boost inductor energy during fault conditions.	Use Scenario: Isolated DC/DC converter for telecom systems delivering 48 V/20 A output from 380–400 V DC input. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in forward topology, operating at 100–500 kHz with zero-voltage switching assistance. Use Value: 6.9 V/ns dV/dt rating prevents parasitic turn-on during transformer reset; TO-220 thermal performance sustains 170 W dissipation at T_C = 25 °C.
Uninterruptible Power Supply Inverter	Industrial Motor Drive Half-Bridge
Use Scenario: Online UPS output stage converting 400 V DC bus to clean 230 VAC sine wave via SPWM modulation. IC Role / Device Role / Timing Role: High-side switch in full-bridge inverter leg, conducting 11 A RMS with 44 A pulsed current capability. Use Value: Body diode t_rr (510–770 ns) and Q_rr (3.4–5.1 μC) enable efficient freewheeling during dead-time; 150 °C max T_J supports sealed enclosure operation.	Use Scenario: 1 kW BLDC motor drive for HVAC compressors, operating from 300–450 V DC bus with 10–20 kHz PWM. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutating motor phase current with fast turn-off (28 ns fall time). Use Value: 18 nC Q_gd ensures crisp turn-off edge; R_thJC = 0.75 °C/W allows direct heatsink mounting for compact thermal design.

Power Factor Correction Boost Converter

Two-Transistor Forward Converter

Use Scenario: High-efficiency AC/DC front-end stage converting universal input (85–265 VAC) to 400 V DC bus with >95 % efficiency.

IC Role / Device Role / Timing Role: Main switching element handling 11 A peak current at 50–200 kHz, synchronized to PFC controller.

Use Value: 0.52 Ω R_DS(on) minimizes conduction loss at high duty cycles; 275 mJ E_AS absorbs boost inductor energy during fault conditions.

Use Scenario: Isolated DC/DC converter for telecom systems delivering 48 V/20 A output from 380–400 V DC input.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in forward topology, operating at 100–500 kHz with zero-voltage switching assistance.

Use Value: 6.9 V/ns dV/dt rating prevents parasitic turn-on during transformer reset; TO-220 thermal performance sustains 170 W dissipation at T_C = 25 °C.

Uninterruptible Power Supply Inverter

Industrial Motor Drive Half-Bridge

Use Scenario: Online UPS output stage converting 400 V DC bus to clean 230 VAC sine wave via SPWM modulation.

IC Role / Device Role / Timing Role: High-side switch in full-bridge inverter leg, conducting 11 A RMS with 44 A pulsed current capability.

Use Value: Body diode t_rr (510–770 ns) and Q_rr (3.4–5.1 μC) enable efficient freewheeling during dead-time; 150 °C max T_J supports sealed enclosure operation.

Use Scenario: 1 kW BLDC motor drive for HVAC compressors, operating from 300–450 V DC bus with 10–20 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutating motor phase current with fast turn-off (28 ns fall time).

Use Value: 18 nC Q_gd ensures crisp turn-off edge; R_thJC = 0.75 °C/W allows direct heatsink mounting for compact thermal design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK50ZFP	500 V, 12 A, R_DS(on) = 0.58 Ω, Q_g = 45 nC, TO-220FP package (full-pack, non-isolated tab)	Lower Q_g but higher R_DS(on); tab is source-connected - requires isolation only if source ≠ heatsink potential	Preferred where gate drive power is constrained and source-referenced heatsinking is acceptable
IXTH12N50L	500 V, 12 A, R_DS(on) = 0.55 Ω, Q_g = 58 nC, TO-247 package with isolated tab	Higher Q_g and larger footprint; superior R_thJC (0.45 °C/W) for higher power density	Selected when thermal budget is tighter and board space allows TO-247 mounting

Compared with STP12NK50ZFP and IXTH12N50L, the IRFB11N50APBF-BE3 offers the lowest R_DS(on) among TO-220 isolatable devices in this voltage class, balanced by moderate Q_g and industry-standard thermal metrics - making it optimal for cost-sensitive, medium-power SMPS where tab isolation and 0.52 Ω on-resistance are prioritized.

Availability

IRFB11N50APBF-BE3 is available at Aetrix Electronics and suitable for switch mode power supply (SMPS), uninterruptible power supply (UPS), and high-speed power switching applications requiring stable component supply, RoHS-compliant and halogen-free construction, and long-term industrial availability.

Supply support for IRFB11N50APBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFB11N50APBF-BE3 belongs to Vishay's high-voltage power MOSFET product line, engineered for demanding offline power conversion applications where avalanche robustness, low gate charge, and thermal stability are essential.

FAQ

What is the maximum continuous drain current for IRFB11N50APBF-BE3 at 100 °C case temperature?

The IRFB11N50APBF-BE3 supports 7.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures junction temperature remains within −55 to +150 °C range. At T_C = 25 °C, the rating increases to 11 A with 170 W power dissipation capability.

Does IRFB11N50APBF-BE3 have a fully characterized body diode, and what are its key recovery parameters?

Yes, the IRFB11N50APBF-BE3 features a fully characterized intrinsic body diode with t_rr = 510–770 ns and Q_rr = 3.4–5.1 μC at T_J = 25 °C, I_F = 11 A, and dI/dt = 100 A/μs. These values are measured and documented in the datasheet, enabling accurate modeling of reverse recovery losses in hard-switched topologies like two-transistor forward converters.

Is IRFB11N50APBF-BE3 pin-compatible with earlier IRFB11N50A variants?

Yes, IRFB11N50APBF-BE3 maintains identical pinout, package outline, and electrical specifications as the base IRFB11N50A, differing only in material content: it is lead-free and halogen-free per Vishay's "BE3" designation. No PCB layout changes are required when upgrading from IRFB11N50A or IRFB11N50APbF to IRFB11N50APBF-BE3.

What is the gate-source threshold voltage range for IRFB11N50APBF-BE3, and how does it affect drive requirements?

The IRFB11N50APBF-BE3 has a V_GS(th) range of 2.0–4.0 V at I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while providing sufficient margin against noise-induced conduction. The relatively narrow threshold window supports consistent switching behavior across temperature and unit-to-unit variation in SMPS control loops.

Can IRFB11N50APBF-BE3 be used in avalanche-mode operation, and what is its rated single-pulse energy?

Yes, the IRFB11N50APBF-BE3 is fully rated for unclamped inductive switching with a guaranteed single-pulse avalanche energy (E_AS) of 275 mJ at I_AS = 11 A, L = 4.5 mH, and R_G = 25 Ω. This capability is validated per JEDEC JESD24-1 and enables robust operation in relay drivers, solenoid controls, and fault-tolerant power stages without external snubbers.

IRFB11N50APBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 520mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1423 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB11N50APBF-BE3 FAQ

1.How can I place an order for IRFB11N50APBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB11N50APBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB11N50APBF-BE3 reliable?

The price and inventory of IRFB11N50APBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB11N50APBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFB11N50APBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB11N50APBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB11N50APBF-BE3?

IRFB11N50APBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB11N50APBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB11N50APBF-BE3?

For technical support, including IRFB11N50APBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB11N50APBF-BE3 requirements.

6.How does Aetrix verify that IRFB11N50APBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFB11N50APBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB11N50APBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFB11N50APBF-BE3?

All IRFB11N50APBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFB11N50APBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB11N50APBF-BE3 part is unused and in its original packaging.

Return procedure for IRFB11N50APBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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