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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFB13N50A

Name: IRFB13N50A
Brand: Vishay Siliconix
SKU: IRFB13N50A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB13N50A

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB13N50A.pdf

Description:: MOSFET N-CH 500V 14A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB13N50A from Vishay Siliconix is a 500 V, 14 A N-channel power MOSFET in TO-220AB package, featuring 0.45 Ω R_DS(on) at V_GS = 10 V, 81 nC total gate charge, and 560 mJ single-pulse avalanche energy - optimized for high-voltage SMPS and UPS main switch applications.

For engineers reviewing the IRFB13N50A datasheet, IRFB13N50A pinout, IRFB13N50A application, or IRFB13N50A equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJC = 0.50 °C/W), body diode recovery metrics (t_rr = 370–550 ns), and real-world switching timing (t_d(on) = 15 ns, t_f = 31 ns) critical for hard-switched converter design.

Technical Context

The IRFB13N50A employs planar vertical DMOS technology with fully characterized C_iss (1910 pF), C_oss (290 pF), and C_rss (11 pF) to support accurate snubber and gate drive loss calculation. Its gate threshold voltage (2.0–4.0 V) and low Q_gd/Q_g ratio (36/81 = 44.4%) enable robust dV/dt immunity and reduced Miller-induced turn-off risk.

Designed for unclamped inductive switching, it sustains repetitive avalanche current up to 14 A and single-pulse energy up to 560 mJ under defined test conditions (L = 5.7 mH, I_AS = 14 A). The integral body diode exhibits V_SD = 1.5 V at 14 A and Q_rr = 4.4–6.5 μC, supporting synchronous rectification evaluation in flyback or LLC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports 400 V DC bus designs with 25 % margin for transient overvoltage
R_DS(on)	0.45 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 14 A continuous drain current
Q_g	81 nC - determines gate driver peak current requirement (~10.8 A for 7.5 Ω R_g and 15 ns t_d(on))
E_AS	560 mJ - allows safe operation during single-event inductive fault without device failure
t_r/t_f	39 ns / 31 ns - defines minimum practical switching frequency before excessive switching loss dominates
R_thJC	0.50 °C/W - permits 250 W dissipation with ≤125 °C junction rise above 25 °C case temperature
trr / Qrr	370–550 ns / 4.4–6.5 μC - sets diode reverse recovery loss and EMI generation level in hard-commutated circuits

Pinout & Package

IRFB13N50A is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standard 2.54 mm lead pitch, and 1.6 mm lead-to-case clearance per JEDEC MS-001. The package provides 250 W maximum power dissipation at T_C = 25 °C and requires flat, greased mounting surface for optimal thermal transfer (R_thCS = 0.50 °C/W).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; 20 nC Q_gs defines Miller plateau duration and gate resistor sizing
D (Drain)	High-side power terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless system ground referenced
S (Source)	Power return and reference node	Serves as local ground for gate drive; carries full load current and body diode reverse recovery current

Key Features

Feature	Design Value
Lower gate charge (Q_g = 81 nC)	Reduces gate driver power demand and simplifies discrete or IC-based drive circuitry
Improved dynamic dV/dt ruggedness	Enables reliable operation in high dv/dt environments (tested to 7.6 V/ns) without spurious turn-on
Fully characterized avalanche performance	Guarantees 560 mJ single-pulse and 25 mJ repetitive avalanche energy handling capability
Low Crss (11 pF)	Minimizes Miller feedback effect, improving switching stability and reducing gate oscillation risk
RoHS-compliant Pb-free variant available	IRFB13N50APbF meets EU RoHS Directive 2011/65/EU with lead-free terminations

Applications

Server SMPS Primary Switch	Industrial UPS Inverter Stage
Use Scenario: High-efficiency 3.3 kW telecom rectifier operating at 100 kHz with 380–400 V DC input. IC Role / Device Role / Timing Role: Main switching transistor in active-clamp forward topology; handles 14 A RMS primary current with 500 V blocking. Use Value: 0.45 Ω R_DS(on) limits conduction loss to <1.0 W; 560 mJ E_AS absorbs leakage inductance spikes during clamp reset.	Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from 48 V DC battery bank via 400 V DC link. IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT/MOSFET inverter bridge; commutates 14 A load current at 8 kHz PWM. Use Value: 14 A I_D rating and 9.2 V/ns peak diode recovery dV/dt ensure stable operation during fast polarity reversal of motor loads.
EV Onboard Charger PFC Stage	Medical Imaging Power Supply
Use Scenario: 6.6 kW bidirectional OBC using interleaved boost PFC with 400 V DC bus. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM); switches at 65–100 kHz with 14 A peak current. Use Value: Low Q_gd/Q_g ratio (44.4 %) suppresses Miller-induced shoot-through; 370–550 ns t_rr minimizes reverse recovery loss in critical conduction mode transitions.	Use Scenario: High-reliability 1.2 kW X-ray generator supply requiring zero failure-in-time (FIT) operation over 10-year service life. IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC converter powering high-voltage filament supply. Use Value: Fully characterized R_thJC = 0.50 °C/W and -55 to +150 °C T_J range support derating models for MTBF prediction; 500 V V_DS accommodates 400 V nominal bus with safety margin.

Server SMPS Primary Switch

Industrial UPS Inverter Stage

Use Scenario: High-efficiency 3.3 kW telecom rectifier operating at 100 kHz with 380–400 V DC input.

IC Role / Device Role / Timing Role: Main switching transistor in active-clamp forward topology; handles 14 A RMS primary current with 500 V blocking.

Use Value: 0.45 Ω R_DS(on) limits conduction loss to <1.0 W; 560 mJ E_AS absorbs leakage inductance spikes during clamp reset.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from 48 V DC battery bank via 400 V DC link.

IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT/MOSFET inverter bridge; commutates 14 A load current at 8 kHz PWM.

Use Value: 14 A I_D rating and 9.2 V/ns peak diode recovery dV/dt ensure stable operation during fast polarity reversal of motor loads.

EV Onboard Charger PFC Stage

Medical Imaging Power Supply

Use Scenario: 6.6 kW bidirectional OBC using interleaved boost PFC with 400 V DC bus.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM); switches at 65–100 kHz with 14 A peak current.

Use Value: Low Q_gd/Q_g ratio (44.4 %) suppresses Miller-induced shoot-through; 370–550 ns t_rr minimizes reverse recovery loss in critical conduction mode transitions.

Use Scenario: High-reliability 1.2 kW X-ray generator supply requiring zero failure-in-time (FIT) operation over 10-year service life.

IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC converter powering high-voltage filament supply.

Use Value: Fully characterized R_thJC = 0.50 °C/W and -55 to +150 °C T_J range support derating models for MTBF prediction; 500 V V_DS accommodates 400 V nominal bus with safety margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK50ZFP	Zener-protected gate; higher R_DS(on) = 0.52 Ω; lower Q_g = 60 nC; same 500 V rating	Better gate transient immunity but higher conduction loss; suited for lower-current, high-safety-margin designs	Select when enhanced gate protection outweighs efficiency penalty in cost-sensitive industrial SMPS
IXTH14N50L	Lower V_GS(th) = 2.0–3.5 V; higher C_iss = 2200 pF; identical R_DS(on) = 0.45 Ω and E_AS = 560 mJ	Improved gate drive compatibility with 5 V controllers but slower switching due to higher input capacitance	Prefer when interfacing with legacy 5 V microcontrollers or where gate drive simplicity trumps switching speed

Compared with STP14NK50ZFP and IXTH14N50L, the IRFB13N50A offers balanced trade-offs: lowest Q_gd/Q_g ratio for dV/dt immunity, fully specified avalanche metrics, and proven thermal performance in TO-220AB - making it optimal for high-reliability 400 V bus converters demanding predictable ruggedness.

Availability

IRFB13N50A is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed power switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFB13N50A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific characterization.

The IRFB13N50A belongs to Vishay's high-voltage power MOSFET product line, engineered for industrial and computing power conversion systems where avalanche capability, thermal stability, and repeatable switching behavior are mission-critical.

FAQ

What is the maximum continuous drain current for IRFB13N50A at 100 °C case temperature?

The IRFB13N50A supports 9.1 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures junction temperature remains within the -55 to +150 °C operating range. At 25 °C case temperature, the rating rises to 14 A.

Does IRFB13N50A have an integrated body diode, and what are its key recovery parameters?

Yes, the IRFB13N50A includes an intrinsic body diode rated for 14 A continuous and 56 A pulsed forward current. Its reverse recovery time (t_rr) is 370–550 ns at T_J = 25–125 °C with dI/dt = 100 A/μs, and reverse recovery charge (Q_rr) is 4.4–6.5 μC - critical parameters for estimating diode-related switching losses in hard-commutated topologies.

What is the gate-source threshold voltage range for IRFB13N50A, and how does it affect drive requirements?

The IRFB13N50A has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drive while avoiding unintended conduction from noise; the relatively narrow spread improves consistency across production lots in high-volume SMPS manufacturing.

How is the avalanche capability of IRFB13N50A validated, and what test conditions apply?

The IRFB13N50A's avalanche performance is validated per JEDEC JESD24-1: single-pulse energy (E_AS) is 560 mJ at L = 5.7 mH, I_AS = 14 A, and R_g = 25 Ω; repetitive avalanche current (I_AR) is 14 A. These values are measured with starting T_J = 25 °C and define safe operating limits during inductive fault events.

Is IRFB13N50A RoHS-compliant, and which variant carries that designation?

Yes, the IRFB13N50APbF variant is RoHS-compliant with lead-free terminations, as confirmed in the Ordering Information section of the Vishay datasheet (S21-0340-Rev. C). The base part number IRFB13N50A may refer to legacy Pb-containing versions; always specify IRFB13N50APbF for RoHS-conforming designs.

IRFB13N50A Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 81 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1910 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB13N50A FAQ

1.How can I place an order for IRFB13N50A through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB13N50A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB13N50A reliable?

The price and inventory of IRFB13N50A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB13N50A is usually 5 days.

3.What payment methods are accepted for IRFB13N50A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB13N50A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB13N50A?

IRFB13N50A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB13N50A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB13N50A?

For technical support, including IRFB13N50A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB13N50A requirements.

6.How does Aetrix verify that IRFB13N50A is sourced from the original manufacturer or authorized distributors?

All IRFB13N50A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB13N50A meets industry standards.

7.What is the process for return or replacement of IRFB13N50A?

All IRFB13N50A units undergo pre-shipment inspection (PSI). If there is an issue with IRFB13N50A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB13N50A part is unused and in its original packaging.

Return procedure for IRFB13N50A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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