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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFB13N50APBF

Name: IRFB13N50APBF
Brand: Vishay Siliconix
SKU: IRFB13N50APBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB13N50APBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB13N50APBF.pdf

Description:: MOSFET N-CH 500V 14A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB13N50APBF from Vishay Siliconix is a 500 V, 14 A N-channel power MOSFET in TO-220AB package, featuring 0.45 Ω R_DS(on) at V_GS = 10 V, 81 nC total gate charge, and 560 mJ single-pulse avalanche energy-designed for high-voltage switching in SMPS and UPS systems.

For engineers reviewing the IRFB13N50APBF datasheet, IRFB13N50APBF pinout, IRFB13N50APBF application, or IRFB13N50APBF equivalent, key selection criteria include its 500 V blocking capability, thermal resistance (R_thJC = 0.50 °C/W), body diode recovery time (370–550 ns), and RoHS-compliant Pb-free lead finish.

Technical Context

This discrete power MOSFET uses planar silicon technology with fully characterized avalanche ruggedness and dynamic dV/dt immunity up to 9.2 V/ns. Its gate drive is simplified by low Q_g (81 nC) and moderate Q_gd/Q_gs ratio (36/20 nC), supporting fast switching in hard-switched topologies.

The device integrates a robust intrinsic body diode rated for 14 A continuous source-drain current and 56 A pulsed current, with reverse recovery charge (Q_rr) of 4.4–6.5 μC and peak recovery current (I_RRM) up to 31 A-critical for snubberless flyback and resonant converter designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in 400 V DC bus and universal AC-input SMPS
R_DS(on)	0.45 Ω @ V_GS = 10 V - enables <1.3 W conduction loss at 8.4 A, reducing heatsink requirements
Q_g	81 nC - determines gate driver current demand (~10 mA avg. for 100 kHz, 10 V swing)
E_AS	560 mJ - allows unclamped inductive switching without failure under 14 A, 5.7 mH load
t_rr	370–550 ns - defines minimum dead-time needed to prevent shoot-through in half-bridge configurations
R_thJC	0.50 °C/W - enables 250 W dissipation with ≤125 °C case-to-junction rise, supporting high-power density layouts
I_D (T_C=100°C)	9.1 A - sets practical continuous current limit in thermally constrained enclosures

Pinout & Package

IRFB13N50APBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standard mounting hole (6-32 or M3), and 10 lbf·in (1.1 N·m) torque rating. The package provides low thermal resistance and mechanical stability for industrial power stages.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; ±30 V absolute max rating prevents ESD damage during handling
D (Drain)	High-side power terminal	Connected to internal die backside and metal tab; requires electrical isolation when mounted to heatsink
S (Source)	Power return and reference	Serves as local ground reference for gate drive; carries full load current and body diode conduction

Key Features

Feature	Design Value
Lower gate charge (Q_g)	Reduces gate driver power loss and simplifies drive circuitry-no need for high-current buffer stages
Improved avalanche ruggedness	Guarantees 560 mJ single-pulse energy survival, eliminating external clamping in many flyback designs
Fully characterized C_iss/C_oss/C_rss	Enables accurate snubber design and predictive EMI modeling across 1–400 V V_DS range
Peak diode recovery dV/dt rating	9.2 V/ns ensures reliable commutation in high-dI/dt circuits without parasitic turn-on
RoHS-compliant Pb-free finish	Meets global environmental compliance without sacrificing solderability or thermal cycling reliability

Applications

Server SMPS Primary Switch	Industrial UPS Inverter Stage
Use Scenario: High-efficiency 1–3 kW server power supply operating from 380 V DC bus with active clamp forward topology. IC Role / Device Role / Timing Role: Main high-side switching element handling 14 A peak drain current at 500 V blocking, synchronized to 100–300 kHz PWM. Use Value: 0.45 Ω R_DS(on) minimizes conduction loss; 560 mJ E_AS absorbs leakage inductance spikes without snubber.	Use Scenario: Online double-conversion UPS delivering clean 230 V AC output during grid failure, using IGBT/MOSFET hybrid inverter. IC Role / Device Role / Timing Role: Low-side switch in H-bridge output stage, conducting bidirectional current during battery discharge mode. Use Value: Body diode t_rr ≤ 550 ns and Q_rr ≤ 6.5 μC reduce cross-conduction losses and EMI during polarity reversal.
Telecom Rectifier Module	EV Charger Auxiliary Power Supply
Use Scenario: 48 V telecom rectifier converting -54 V DC input to +12 V system rail via forward converter with synchronous rectification. IC Role / Device Role / Timing Role: Primary-side MOSFET switching at 200 kHz with 50% duty cycle, subjected to repetitive 500 V transient surges. Use Value: 9.2 V/ns dV/dt rating prevents false turn-on during line transients; R_thJC = 0.50 °C/W sustains 250 W dissipation with forced air cooling.	Use Scenario: 15 W auxiliary supply in 22 kW on-board EV charger, deriving control power from 800 V DC link via flyback converter. IC Role / Device Role / Timing Role: Primary switch operating in discontinuous conduction mode (DCM) with 500 V V_DS stress and 14 A peak current. Use Value: Fully characterized C_oss (82 pF @ 400 V) enables precise resonant timing; 150 °C max T_J rating supports operation in sealed, high-ambient environments.

Server SMPS Primary Switch

Industrial UPS Inverter Stage

Use Scenario: High-efficiency 1–3 kW server power supply operating from 380 V DC bus with active clamp forward topology.

IC Role / Device Role / Timing Role: Main high-side switching element handling 14 A peak drain current at 500 V blocking, synchronized to 100–300 kHz PWM.

Use Value: 0.45 Ω R_DS(on) minimizes conduction loss; 560 mJ E_AS absorbs leakage inductance spikes without snubber.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output during grid failure, using IGBT/MOSFET hybrid inverter.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge output stage, conducting bidirectional current during battery discharge mode.

Use Value: Body diode t_rr ≤ 550 ns and Q_rr ≤ 6.5 μC reduce cross-conduction losses and EMI during polarity reversal.

Telecom Rectifier Module

EV Charger Auxiliary Power Supply

Use Scenario: 48 V telecom rectifier converting -54 V DC input to +12 V system rail via forward converter with synchronous rectification.

IC Role / Device Role / Timing Role: Primary-side MOSFET switching at 200 kHz with 50% duty cycle, subjected to repetitive 500 V transient surges.

Use Value: 9.2 V/ns dV/dt rating prevents false turn-on during line transients; R_thJC = 0.50 °C/W sustains 250 W dissipation with forced air cooling.

Use Scenario: 15 W auxiliary supply in 22 kW on-board EV charger, deriving control power from 800 V DC link via flyback converter.

IC Role / Device Role / Timing Role: Primary switch operating in discontinuous conduction mode (DCM) with 500 V V_DS stress and 14 A peak current.

Use Value: Fully characterized C_oss (82 pF @ 400 V) enables precise resonant timing; 150 °C max T_J rating supports operation in sealed, high-ambient environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK50ZFP	Zener-protected gate; higher R_DS(on) (0.52 Ω); lower Q_g (65 nC); same 500 V rating	Better ESD immunity but reduced conduction efficiency at >10 A	Prefer when gate drive noise immunity is critical and thermal margin allows higher R_DS(on)
IXTH12N50L	Logic-level gate (V_GS(th) = 2.0–3.5 V); higher R_DS(on) (0.55 Ω); same TO-247 package	Enables direct microcontroller drive but requires larger heatsink at full load	Choose when 3.3 V/5 V logic compatibility outweighs conduction loss penalty

Compared with STP14NK50ZFP and IXTH12N50L, the IRFB13N50APBF delivers optimal balance of low R_DS(on), proven avalanche robustness, and industry-standard TO-220AB footprint-making it preferred for cost-sensitive, thermally demanding 500 V SMPS where gate drive voltage exceeds 10 V.

Availability

IRFB13N50APBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and high-speed power switching applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFB13N50APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFB13N50APBF belongs to Vishay's high-voltage power MOSFET product line, engineered for ruggedized operation in off-line AC-DC conversion, UPS inverters, and telecom rectifiers where avalanche energy handling and thermal stability are critical.

FAQ

What is the maximum continuous drain current for IRFB13N50APBF at 100 °C case temperature?

The IRFB13N50APBF supports 9.1 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and must be validated against actual board layout, heatsink interface, and ambient conditions in the final design.

Does IRFB13N50APBF have avalanche capability, and how is it rated?

Yes, the IRFB13N50APBF is fully rated for avalanche operation: single-pulse energy E_AS = 560 mJ (tested per Fig. 12a), repetitive avalanche current I_AR = 14 A, and repetitive avalanche energy E_AR = 25 mJ. These values are measured under standardized conditions and confirm ruggedness in inductive switching applications.

What is the gate-source threshold voltage range for IRFB13N50APBF?

The gate-source threshold voltage V_GS(th) for IRFB13N50APBF is specified from 2.0 V to 4.0 V at T_J = 25 °C and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drive while maintaining noise immunity against spurious gate excursions.

How does the body diode performance of IRFB13N50APBF impact synchronous rectifier designs?

The IRFB13N50APBF body diode has t_rr = 370–550 ns and Q_rr = 4.4–6.5 μC at T_J = 25–125 °C, enabling use in quasi-resonant and LLC converters where body diode conduction occurs during dead-time. Its low V_SD (1.5 V max) reduces forward loss but requires careful dead-time optimization to avoid overlap conduction.

Is IRFB13N50APBF RoHS-compliant, and what does the 'PbF' suffix indicate?

Yes, IRFB13N50APBF is RoHS-compliant. The 'PbF' suffix explicitly denotes lead (Pb)-free terminations, meeting EU RoHS Directive 2011/65/EU requirements. Per Vishay documentation, this part contains no intentionally added lead and complies with material categorization standard 99912.

IRFB13N50APBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 81 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1910 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB13N50APBF FAQ

1.How can I place an order for IRFB13N50APBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB13N50APBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB13N50APBF reliable?

The price and inventory of IRFB13N50APBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB13N50APBF is usually 5 days.

3.What payment methods are accepted for IRFB13N50APBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB13N50APBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB13N50APBF?

IRFB13N50APBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB13N50APBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB13N50APBF?

For technical support, including IRFB13N50APBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB13N50APBF requirements.

6.How does Aetrix verify that IRFB13N50APBF is sourced from the original manufacturer or authorized distributors?

All IRFB13N50APBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB13N50APBF meets industry standards.

7.What is the process for return or replacement of IRFB13N50APBF?

All IRFB13N50APBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB13N50APBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB13N50APBF part is unused and in its original packaging.

Return procedure for IRFB13N50APBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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