Vishay Siliconix IRFB16N50K

Overview

IRFB16N50K from Vishay Siliconix is a 500 V, 17 A N-channel power MOSFET in TO-220 package, featuring 0.285 Ω R_DS(on) at V_GS = 10 V, 89 nC total gate charge, and 310 mJ single-pulse avalanche energy - designed for hard-switched SMPS and UPS output stages.

For engineers reviewing the IRFB16N50K datasheet, IRFB16N50K pinout, IRFB16N50K application, or IRFB16N50K equivalent, key selection criteria include its 500 V blocking rating, 280 W power dissipation at T_C = 25 °C, 11 V/ns peak diode recovery dV/dt capability, and RoHS-compliant Pb-free variant IRFB16N50KPbF.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage switching with enhanced dynamic ruggedness. Its gate charge profile (Q_g = 89 nC max, Q_gd = 43 nC) supports efficient 100–500 kHz operation in flyback and forward converters while maintaining low conduction loss via 0.285 Ω R_DS(on).

The device integrates a fully characterized body diode with t_rr = 490–730 ns and Q_rr = 5710–8560 nC, enabling reliable unclamped inductive switching up to I_AS = 17 A. Thermal resistance R_thJC = 0.44 °C/W ensures effective heat transfer to heatsinks in high-power density designs.

Key Specifications

Pinout & Package

IRFB16N50K uses a standard TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, and 1.1 N·m screw torque rating. The case-to-sink thermal resistance is 0.50 °C/W with greased flat interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP16NF50 and IXTH16N50L, the IRFB16N50K delivers optimal balance of conduction loss, switching loss, and thermal resistance in TO-220 form factor - making it preferred for space-constrained 1–5 kW industrial power supplies where both efficiency and layout compatibility matter.

Availability

IRFB16N50K is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-frequency hard-switched circuits requiring stable component supply across production lifecycles.

Supply support for IRFB16N50K includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The IRFB16N50K belongs to Vishay's high-voltage Power MOSFET family engineered for rugged, high-efficiency switching in industrial and telecom power conversion - emphasizing avalanche robustness, low gate charge, and thermal stability.

FAQ

What is the maximum continuous drain current for IRFB16N50K at 100 °C case temperature?

The IRFB16N50K supports 11 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 package and ensures safe operation within the 150 °C maximum junction temperature. The IRFB16N50K must be mounted on an adequately sized heatsink to maintain case temperature at or below this threshold during sustained load conditions.

Does IRFB16N50K have a fully rated body diode for synchronous rectification?

Yes, the IRFB16N50K features a fully characterized intrinsic body diode with documented parameters: V_SD ≤ 1.5 V at I_S = 17 A and T_J = 25 °C, t_rr = 490–730 ns, and Q_rr = 5710–8560 nC. These values are measured under controlled conditions and enable predictable performance in quasi-resonant or synchronous rectifier applications where the body diode conducts during dead time.

Is IRFB16N50K pin-compatible with IRFP150 or other legacy 500 V MOSFETs in TO-220?

No, IRFB16N50K is not pin-compatible with IRFP150. While both use TO-220 packages, the IRFB16N50K has different gate charge characteristics (Q_g = 89 nC vs. IRFP150's 120 nC), R_DS(on) (0.285 Ω vs. 0.055 Ω), and voltage rating (500 V vs. 100 V). Substitution would require full circuit revalidation due to mismatched switching behavior and conduction loss profiles.

What is the recommended gate resistor value for IRFB16N50K in a 200 kHz flyback converter?

For a 200 kHz flyback converter, a gate resistor of 8.8 Ω is validated in the IRFB16N50K datasheet (Fig. 10a/b), yielding t_d(on) = 20 ns and t_r = 77 ns. This value balances switching speed against ringing and EMI. Lower values (e.g., 4.7 Ω) may increase dV/dt stress; higher values (e.g., 22 Ω) reduce EMI but raise switching losses - actual selection must consider driver capability and layout parasitics.

Can IRFB16N50K be used in avalanche mode for clamping without external components?

Yes, the IRFB16N50K is fully characterized for repetitive avalanche operation: I_AR = 17 A and E_AR = 28 mJ per pulse. Its 310 mJ single-pulse avalanche energy (E_AS) allows safe clamping of inductive spikes in RCD or active clamp circuits. However, thermal management remains critical - avalanche duty cycle must stay below 2 % and junction temperature must not exceed 150 °C during operation.