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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFB16N50KPBF

Name: IRFB16N50KPBF
Brand: Vishay Siliconix
SKU: IRFB16N50KPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB16N50KPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB16N50KPBF.pdf

Description:: MOSFET N-CH 500V 17A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB16N50KPBF from Vishay Siliconix is a 500 V, 17 A N-channel power MOSFET in TO-220 package, featuring 0.285 Ω R_DS(on) at V_GS = 10 V, 89 nC total gate charge, and 310 mJ single-pulse avalanche energy-designed for hard-switched SMPS and UPS output stages.

For engineers reviewing the IRFB16N50KPBF datasheet, IRFB16N50KPBF pinout, IRFB16N50KPBF application, or IRFB16N50KPBF equivalent, key selection criteria include its 500 V blocking rating, low Q_g/Q_gd ratio for fast switching with reduced Miller effect, robust dV/dt immunity (11 V/ns), and validated unclamped inductive switching performance under 17 A I_AS.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage power conversion. Its gate structure delivers low Q_g (60–89 nC) and moderate Q_gd/Q_g ratio (~48 %), enabling efficient 100–500 kHz operation in flyback and forward converters without excessive drive loss.

Thermally, it features R_thJC = 0.44 °C/W and supports continuous 17 A drain current at T_C = 25 °C, derating linearly to 11 A at 100 °C. The integrated body diode exhibits t_rr = 490–730 ns and Q_rr = 5.7–8.6 µC, suitable for non-synchronous rectification where recovery behavior is managed externally.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports 400 V DC bus designs with 25 % margin for transients
R_DS(on)	0.285 Ω max at V_GS = 10 V - enables <1 W conduction loss at 17 A
Q_g	89 nC max - determines gate driver current requirement (e.g., 1.8 A peak for 50 ns rise)
E_AS	310 mJ - withstands unclamped inductive energy in primary-side switching without failure
I_D (T_C = 25 °C)	17 A - defines maximum continuous current with heatsink at case temperature ≤25 °C
dV/dt Rating	11 V/ns - ensures reliable operation during fast voltage transitions without spurious turn-on
R_thJC	0.44 °C/W - allows direct thermal path to heatsink; junction-to-case delta = 123 °C at 280 W dissipation

Pinout & Package

TO-220AB package with isolated tab (drain-connected). Standard 3-lead through-hole mounting; tab electrically connected to drain for low-inductance heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; threshold 3.0–5.0 V; ±30 V absolute max rating
D (Drain)	High-side power terminal	Connected to tab; carries full load current and withstands 500 V transient spikes
S (Source)	Power return / reference node	Common return for gate drive and load current; referenced to system ground in low-side configuration

Key Features

Feature	Design Value
Low Q_g	89 nC max enables simple gate driving with standard 1 A drivers at 200–500 kHz
Enhanced dV/dt ruggedness	11 V/ns rating prevents false triggering during fast voltage transients in SMPS
Full avalanche characterization	310 mJ E_AS and 28 mJ E_AR support reliable operation in inductive switching faults
Low R_DS(on)	0.285 Ω at 10 V reduces conduction loss by >20 % vs. legacy 500 V MOSFETs of similar size
RoHS-compliant lead-free	Pb-free terminations meet EU RoHS Directive 2011/65/EU without exemptions

Applications

Switch Mode Power Supply	Uninterruptible Power Supply
Use Scenario: Primary-side switch in 500 W offline flyback converter with 400 V DC bus. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding. Use Value: 500 V rating and 310 mJ E_AS ensure safe operation during line surges and startup overloads.	Use Scenario: Inverter stage in 1 kVA double-conversion UPS delivering clean 230 V AC output. IC Role / Device Role / Timing Role: Bridge-leg switching device in full-bridge DC–AC inverter operating at 20 kHz. Use Value: Low Q_g and 0.285 Ω R_DS(on) minimize switching + conduction losses at high RMS currents.
Hard-Switched Motor Drive	Industrial DC–DC Converter
Use Scenario: High-side switch in 48 V input, 300 V output boost converter for servo amplifier supply. IC Role / Device Role / Timing Role: Unidirectional power switch in non-isolated boost topology with fixed 50–100 kHz frequency. Use Value: Robust dV/dt immunity (11 V/ns) prevents shoot-through during rapid bus voltage transitions.	Use Scenario: Isolated forward converter in programmable DC power supply (0–60 V, 20 A). IC Role / Device Role / Timing Role: Primary-side synchronous rectifier control switch in self-driven or external-gated configuration. Use Value: Characterized C_oss (240 pF typ) and C_rss (26 pF) enable accurate snubber design and ZVS optimization.

Switch Mode Power Supply

Uninterruptible Power Supply

Use Scenario: Primary-side switch in 500 W offline flyback converter with 400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding.

Use Value: 500 V rating and 310 mJ E_AS ensure safe operation during line surges and startup overloads.

Use Scenario: Inverter stage in 1 kVA double-conversion UPS delivering clean 230 V AC output.

IC Role / Device Role / Timing Role: Bridge-leg switching device in full-bridge DC–AC inverter operating at 20 kHz.

Use Value: Low Q_g and 0.285 Ω R_DS(on) minimize switching + conduction losses at high RMS currents.

Hard-Switched Motor Drive

Industrial DC–DC Converter

Use Scenario: High-side switch in 48 V input, 300 V output boost converter for servo amplifier supply.

IC Role / Device Role / Timing Role: Unidirectional power switch in non-isolated boost topology with fixed 50–100 kHz frequency.

Use Value: Robust dV/dt immunity (11 V/ns) prevents shoot-through during rapid bus voltage transitions.

Use Scenario: Isolated forward converter in programmable DC power supply (0–60 V, 20 A).

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier control switch in self-driven or external-gated configuration.

Use Value: Characterized C_oss (240 pF typ) and C_rss (26 pF) enable accurate snubber design and ZVS optimization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF50	R_DS(on) = 0.30 Ω (typ), Q_g = 72 nC, E_AS = 250 mJ, TO-220	Lower gate charge but reduced avalanche capability; less margin for inductive fault handling	Preferred where gate drive simplicity outweighs need for highest ruggedness
IXTH16N50L	R_DS(on) = 0.32 Ω, Q_g = 65 nC, E_AS = 280 mJ, TO-247	Larger TO-247 package offers better thermal performance but requires PCB layout change	Chosen when higher power dissipation (>300 W) demands lower R_thJC than TO-220 allows

Compared with STP16NF50 and IXTH16N50L, the IRFB16N50KPBF provides the highest single-pulse avalanche energy (310 mJ) in TO-220, making it optimal for cost-sensitive, space-constrained 500 V SMPS where fault robustness is critical without changing footprint.

Availability

IRFB16N50KPBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and industrial DC–DC converters requiring stable component supply across multi-year production cycles.

Supply support for IRFB16N50KPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedness.

The IRFB16N50KPBF belongs to Vishay's "IR" high-voltage power MOSFET family, engineered for demanding hard-switched power conversion in industrial and telecom infrastructure where voltage margin and avalanche survivability are essential.

FAQ

What is the maximum continuous drain current for IRFB16N50KPBF at 100 °C case temperature?

The IRFB16N50KPBF supports 11 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the TO-220 package and silicon die; operation above this current requires active cooling or pulse-width limitation to maintain T_J ≤ 150 °C. The IRFB16N50KPBF datasheet specifies linear derating beyond 25 °C at 2.3 W/°C.

Does IRFB16N50KPBF have a fully characterized body diode for synchronous rectification?

No-the IRFB16N50KPBF body diode is characterized for reverse recovery (t_rr = 490–730 ns, Q_rr = 5.7–8.6 µC) but is not optimized for synchronous rectification. It lacks low Q_rr and soft recovery traits required for high-efficiency SR. The IRFB16N50KPBF is intended for hard-switched topologies where the diode conducts only during dead time or fault conditions.

Is IRFB16N50KPBF pin-compatible with earlier IRFB16N50K (SnPb) version?

Yes-IRFB16N50KPBF is the RoHS-compliant, lead-free variant of IRFB16N50K and shares identical TO-220 mechanical dimensions, pinout, and electrical specifications. The "PbF" suffix denotes Pb-free terminations; no PCB or schematic changes are needed when upgrading from IRFB16N50K to IRFB16N50KPBF.

What is the typical gate threshold voltage range for IRFB16N50KPBF?

The IRFB16N50KPBF has a gate-source threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V at T_J = 25 °C and I_D = 250 µA. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while maintaining noise immunity against spurious gate excursions below 3 V.

Can IRFB16N50KPBF be used in zero-voltage switching (ZVS) circuits?

Yes-the IRFB16N50KPBF's well-characterized C_iss (2210 pF typ), C_oss (240 pF typ), and C_rss (26 pF typ) enable precise resonant timing in ZVS half-bridge or LLC converters. Its low Q_gd/Q_g ratio supports clean turn-off, and the 500 V rating accommodates resonant voltage peaks up to 400 V bus + 100 V margin.

IRFB16N50KPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 350mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 89 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2210 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 280W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB16N50KPBF FAQ

1.How can I place an order for IRFB16N50KPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB16N50KPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB16N50KPBF reliable?

The price and inventory of IRFB16N50KPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB16N50KPBF is usually 5 days.

3.What payment methods are accepted for IRFB16N50KPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB16N50KPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB16N50KPBF?

IRFB16N50KPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB16N50KPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB16N50KPBF?

For technical support, including IRFB16N50KPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB16N50KPBF requirements.

6.How does Aetrix verify that IRFB16N50KPBF is sourced from the original manufacturer or authorized distributors?

All IRFB16N50KPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB16N50KPBF meets industry standards.

7.What is the process for return or replacement of IRFB16N50KPBF?

All IRFB16N50KPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB16N50KPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB16N50KPBF part is unused and in its original packaging.

Return procedure for IRFB16N50KPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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