My Inquiry
My Account
Vishay Siliconix IRFB16N60LPBF
- Part No.:
- IRFB16N60LPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRFB16N60LPBF.pdf
- Description:
- MOSFET N-CH 600V 16A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,935
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFB16N60LPBF from Vishay Siliconix is a 600 V, 16 A N-channel power MOSFET in TO-220 package, optimized for zero-voltage switching (ZVS) topologies with ultra-fast body diode recovery (trr ≤ 200 ns at 125 °C), low RDS(on) of 0.385 Ω at VGS = 10 V, and high dV/dt ruggedness (11 V/ns). It serves as the main switching device in telecom server PSUs and UPS inverters.
For engineers reviewing the IRFB16N60LPBF datasheet, IRFB16N60LPBF pinout, IRFB16N60LPBF application, or IRFB16N60LPBF equivalent, key selection criteria include avalanche energy rating (EAS = 310 mJ), gate charge profile (Qg = 100 nC, Qgd = 46 nC), body diode reverse recovery performance (Qrr = 670 nC at 125 °C), and thermal resistance (RthJC = 0.4 °C/W).
Technical Context
This MOSFET employs a planar stripe silicon process with enhanced body diode design to achieve fast, soft reverse recovery-critical for ZVS operation in phase-shifted full-bridge and LLC resonant converters. Its elevated gate threshold voltage (VGS(th) = 3.0–5.0 V) improves noise immunity in high-noise power systems.
The device operates with fixed single-channel configuration and supports unclamped inductive switching up to 16 A avalanche current (IAR), with linear derating above 25 °C case temperature (2.5 W/°C). Junction-to-case thermal resistance enables high-power dissipation (PD = 310 W at TC = 25 °C) when mounted on heatsinks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Withstands DC bus voltages up to 480 V in 400 V nominal telecom supplies with margin. |
| RDS(on) | 0.385 Ω @ VGS = 10 V - Enables <1.0 W conduction loss at 16 A ID, reducing heatsink requirements. |
| Qg / Qgd | 100 nC / 46 nC - High Qgd ratio supports robust Miller immunity during high dV/dt transitions. |
| trr / Qrr | 200 ns / 670 nC @ TJ = 125 °C - Enables ZVS without external anti-parallel diodes in resonant topologies. |
| EAS | 310 mJ - Sustains single-pulse inductive energy in hard-switched motor control or UPS hold-up stages. |
| RthJC | 0.4 °C/W - Allows 310 W power dissipation with ≤124 °C junction rise over 25 °C case temperature. |
| dV/dt | 11 V/ns - Resists false turn-on during fast voltage transients in high-frequency SMPS layouts. |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.6 mm creepage distance, RoHS-compliant matte tin lead finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Receives 10 V logic-level drive; threshold range 3.0–5.0 V ensures noise margin in noisy environments. |
| D (Drain) | High-side switch node | Connected to heatsink via isolated tab; rated for 600 V blocking and 60 A pulsed drain current. |
| S (Source) | Power return / reference | Serves as local ground reference for gate driver; carries full load current and body diode reverse recovery current. |
Key Features
| Feature | Design Value |
|---|---|
| Super-fast body diode | trr ≤ 200 ns at 125 °C eliminates need for external anti-parallel diodes in ZVS converters. |
| Enhanced dV/dt ruggedness | 11 V/ns rating prevents spurious turn-on during high-speed switching transitions. |
| Elevated gate threshold | VGS(th) = 3.0–5.0 V improves immunity to EMI-induced gate glitches in industrial power systems. |
| Low gate charge | Qg = 100 nC reduces driver power loss and simplifies gate drive circuitry for 100–500 kHz operation. |
| Avalanche-rated | EAS = 310 mJ supports reliable unclamped inductive switching in motor drives and UPS hold-up circuits. |
Applications
| Telecom Server Power Supply | Uninterruptible Power Supply (UPS) |
|---|---|
Use Scenario: Primary-side switching in 3.3 kW phase-shifted full-bridge DC-DC converter for 48 V intermediate bus. IC Role / Device Role / Timing Role: Main high-side switching MOSFET with synchronous rectification support via integrated body diode. Use Value: Fast trr (200 ns) enables true ZVS across full load range, reducing switching losses by >35% vs. standard MOSFETs. | Use Scenario: Inverter stage in online double-conversion UPS delivering clean 230 VAC output during grid failure. IC Role / Device Role / Timing Role: Bridge-leg switching device handling bidirectional power flow and battery charging cycles. Use Value: 310 mJ avalanche energy rating ensures safe operation during short-circuit events and line surges without external snubbers. |
| Motor Control Drive | Industrial SMPS |
Use Scenario: Half-bridge leg in 5 kW servo drive powering PMSM motors in CNC machinery. IC Role / Device Role / Timing Role: High-side power switch managing PWM-controlled torque delivery with regenerative braking. Use Value: 11 V/ns dV/dt capability prevents false triggering during rapid bus voltage transitions in regen mode. | Use Scenario: Primary switch in 1.2 kW open-frame industrial SMPS for PLC I/O modules and sensors. IC Role / Device Role / Timing Role: Hard-switched flyback or forward converter transistor operating at 100 kHz with wide input range (90–264 VAC). Use Value: 0.385 Ω RDS(on) minimizes conduction loss at full load, enabling >92% efficiency without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP16NF60 | RDS(on) = 0.42 Ω (higher), Qg = 75 nC (lower), trr = 250 ns (slower), EAS = 280 mJ (lower) | Less suitable for ZVS due to slower body diode; better for lower-frequency hard-switched designs | Prefer IRFB16N60LPBF where ZVS efficiency or avalanche robustness is critical. |
| IXFH16N60P | RDS(on) = 0.39 Ω (similar), Qg = 110 nC (higher), trr = 180 ns (faster), EAS = 350 mJ (higher) | Better for high-reliability UPS/inverter applications requiring extended avalanche endurance | Choose IXFH16N60P if system-level testing confirms need for >310 mJ EAS margin. |
Compared with STP16NF60 and IXFH16N60P, the IRFB16N60LPBF delivers optimal balance of ZVS-enabling body diode speed, gate drive simplicity (moderate Qg), and proven ruggedness in telecom-grade power supplies-making it the preferred choice for cost-sensitive, high-efficiency ZVS designs.
Availability
IRFB16N60LPBF is available at Aetrix Electronics and suitable for telecom server power supplies, uninterruptible power supplies, and motor control drives requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRFB16N60LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power management solutions for industrial, computing, and telecom infrastructure.
The IRFB16N60LPBF belongs to Vishay's "L" series of low-charge, fast-body-diode MOSFETs designed specifically for zero-voltage switching and high-efficiency resonant power conversion topologies.
FAQ
What is the maximum continuous drain current rating for the IRFB16N60LPBF at 100 °C case temperature?
The IRFB16N60LPBF has a continuous drain current rating of 10 A at TC = 100 °C, derated linearly from 16 A at TC = 25 °C using a factor of 2.5 W/°C. This reflects thermal limitations of the TO-220 package under real-world heatsink conditions, not silicon capability alone. The IRFB16N60LPBF maintains safe operation within its SOA curve up to this limit when properly mounted.
Does the IRFB16N60LPBF require an external freewheeling diode in ZVS applications?
No-the IRFB16N60LPBF features a super-fast intrinsic body diode with trr ≤ 200 ns at 125 °C and soft recovery characteristics, explicitly designed to eliminate the need for external anti-parallel diodes in zero-voltage switching topologies. This is confirmed in the Vishay datasheet feature list and validated by measured Qrr and dV/dt performance. The IRFB16N60LPBF achieves reliable ZVS without added component count or layout complexity.
What is the gate threshold voltage range for the IRFB16N60LPBF, and why does it matter?
The IRFB16N60LPBF has a gate threshold voltage range of 3.0 V to 5.0 V at TJ = 25 °C and ID = 250 µA. This elevated VGS(th) improves noise immunity in electrically noisy power systems, reducing risk of spurious turn-on during EMI events. Unlike logic-level MOSFETs, the IRFB16N60LPBF requires ≥10 V gate drive for full enhancement, ensuring stable operation in industrial SMPS where gate drive margins must withstand ripple and transients. This specification is critical for robust system-level design of the IRFB16N60LPBF.
Can the IRFB16N60LPBF be used in avalanche-mode operation, and what is its rated energy?
Yes-the IRFB16N60LPBF is fully rated for repetitive and single-pulse avalanche operation. Its single-pulse avalanche energy (EAS) is 310 mJ, and repetitive avalanche energy (EAR) is 31 mJ, both tested per JEDEC standards. These ratings are validated in the datasheet's absolute maximum ratings table and supported by unclamped inductive test waveforms. Designers may rely on the IRFB16N60LPBF for controlled avalanche in motor drive freewheeling or UPS hold-up stages without derating.
What is the thermal resistance from junction to case (RthJC) for the IRFB16N60LPBF, and how does it impact heatsink design?
The IRFB16N60LPBF has a maximum junction-to-case thermal resistance (RthJC) of 0.4 °C/W, measured from die to TO-220 drain tab. This low value enables high-power dissipation-up to 310 W at TC = 25 °C-when mounted on a properly sized heatsink with low thermal interface resistance. For example, at 100 W dissipation and 50 °C ambient, a heatsink with ≤0.5 °C/W total resistance (including interface) keeps TJ below 150 °C. This thermal performance is integral to the IRFB16N60LPBF's suitability in high-density power supplies.
IRFB16N60LPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 460mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2720 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 310W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRFB16N60LPBF FAQ
1.How can I place an order for IRFB16N60LPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFB16N60LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFB16N60LPBF reliable?
The price and inventory of IRFB16N60LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB16N60LPBF is usually 5 days.
3.What payment methods are accepted for IRFB16N60LPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB16N60LPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFB16N60LPBF?
IRFB16N60LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFB16N60LPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFB16N60LPBF?
For technical support, including IRFB16N60LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB16N60LPBF requirements.
6.How does Aetrix verify that IRFB16N60LPBF is sourced from the original manufacturer or authorized distributors?
All IRFB16N60LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB16N60LPBF meets industry standards.
7.What is the process for return or replacement of IRFB16N60LPBF?
All IRFB16N60LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB16N60LPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFB16N60LPBF part is unused and in its original packaging.
Return procedure for IRFB16N60LPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFB16N60LPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
