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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFB17N50L

Name: IRFB17N50L
Brand: Vishay Siliconix
SKU: IRFB17N50L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB17N50L

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB17N50L.pdf

Description:: MOSFET N-CH 500V 16A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB17N50L from Vishay Siliconix is a 500 V, 16 A N-channel power MOSFET in TO-220AB package, featuring 0.28 Ω R_DS(on) at V_GS = 10 V, 130 nC total gate charge, and low trr (170–250 ns) for high-frequency switching in SMPS and ZVS circuits.

For engineers reviewing the IRFB17N50L datasheet, IRFB17N50L pinout, IRFB17N50L application, or IRFB17N50L equivalent, key selection criteria include avalanche ruggedness (390 mJ E_AS), soft body diode recovery, dV/dt immunity (13 V/ns), thermal resistance (R_thJC = 0.56 °C/W), and RoHS-compliant Pb-free variant IRFB17N50LPbF.

Technical Context

This MOSFET employs planar vertical DMOS technology optimized for high-voltage, medium-current switching with fully characterized dynamic parameters including C_iss (2760 pF), C_oss (325 pF at V_DS = 25 V), and C_rss (37 pF).

It supports repetitive avalanche operation up to 16 A (I_AR) and single-pulse avalanche energy of 390 mJ (E_AS), with body diode reverse recovery charge Q_rr specified at 470–710 nC (T_J = 25 °C) and rated for operation from –55 °C to +150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Withstands DC bus voltages up to 400 V in hard-switched SMPS and inverters without breakdown.
R_DS(on)	0.28 Ω @ V_GS = 10 V - Enables <1.8 W conduction loss at 9.9 A, supporting thermally constrained 220 W continuous dissipation at T_C = 25 °C.
Q_g	130 nC - Requires moderate gate drive strength; compatible with standard 1–2 A peak gate drivers for ≤500 kHz operation.
E_AS	390 mJ - Sustains unclamped inductive switching events in UPS and motor drives without failure under defined test conditions (L = 3.0 mH, I_AS = 16 A).
trr	170–250 ns @ T_J = 25 °C - Enables soft-recovery operation in phase-shifted full-bridge and LLC resonant converters, reducing EMI and voltage overshoot.
dV/dt rating	13 V/ns - Resists false turn-on during high dV/dt transients in bridge-leg configurations without external snubbing.
T_J range	–55 to +150 °C - Qualified for industrial and telecom power systems operating under wide ambient and thermal cycling conditions.

Pinout & Package

IRFB17N50L is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standard mounting hole, and 1.1 N·m screw torque rating. Thermal resistance from junction to case is 0.56 °C/W, enabling direct heatsink mounting with thermal grease.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level gate drive; input capacitance C_iss = 2760 pF shapes Miller plateau timing and driver sizing.
D (Drain)	High-side power terminal	Connected to internal die substrate and metal tab; electrically isolated from mounting surface per TO-220AB spec; carries full load current and avalanche energy.
S (Source)	Power return and reference node	Serves as local ground reference for gate drive; source inductance impacts switching speed and ringing; bonded directly to leadframe for low L_S.

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio	Q_gd = 59 nC of 130 nC total enables stable Miller-effect immunity and predictable turn-off timing in high-side configurations.
Fully characterized avalanche performance	Specified E_AS = 390 mJ and I_AR = 16 A allow reliable use in non-zero-voltage-switching topologies without derating assumptions.
Soft-recovery body diode	Q_rr = 470–710 nC and trr = 170–250 ns reduce diode-induced voltage spikes and EMI in synchronous rectification and bidirectional converters.
Enhanced dV/dt ruggedness	Rated 13 V/ns ensures robustness against parasitic coupling in high-density power stages, minimizing risk of spurious turn-on.
Thermally optimized package	R_thJC = 0.56 °C/W enables >150 W sustained power handling with modest heatsinking-critical for compact 1U server PSUs and telecom rectifiers.

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in 500–1000 W offline flyback or forward converters with universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer; operates at 65–130 kHz with hard switching and partial ZVS. Use Value: 500 V V_DS margin accommodates reflected transients; 0.28 Ω R_DS(on) limits conduction loss below 2.5 W at full load; soft diode reduces snubber losses.	Use Scenario: Inverter stage H-bridge switch in line-interactive UPS delivering 1 kVA output with battery backup. IC Role / Device Role / Timing Role: Bidirectional power switch handling 16 A RMS output current; subjected to repetitive avalanche during battery discharge transitions. Use Value: 390 mJ E_AS withstands inductive kickback from transformer leakage; 13 V/ns dV/dt rating prevents false triggering during fast polarity reversal.
ZVS Resonant Converter	PWM Motor Inverter
Use Scenario: Lagging-leg switch in phase-shifted full-bridge (PSFB) converter for telecom rectifier with 48 V output. IC Role / Device Role / Timing Role: Zero-voltage switched device turning on under near-zero V_DS; body diode conducts prior to turn-on. Use Value: Low trr (170 ns) and soft recovery minimize diode reverse recovery loss and associated voltage stress during ZVS transition.	Use Scenario: Upper-arm switch in 3-phase IGBT/MOSFET inverter driving 1–3 HP induction motors in HVAC compressors. IC Role / Device Role / Timing Role: High-side switching element in 60–120 Hz PWM output stage; experiences repeated commutation with inductive load. Use Value: Rated 16 A continuous drain current at T_C = 100 °C supports thermal design margin; avalanche rating handles motor regeneration spikes.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in 500–1000 W offline flyback or forward converters with universal AC input (85–265 VAC).

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer; operates at 65–130 kHz with hard switching and partial ZVS.

Use Value: 500 V V_DS margin accommodates reflected transients; 0.28 Ω R_DS(on) limits conduction loss below 2.5 W at full load; soft diode reduces snubber losses.

Use Scenario: Inverter stage H-bridge switch in line-interactive UPS delivering 1 kVA output with battery backup.

IC Role / Device Role / Timing Role: Bidirectional power switch handling 16 A RMS output current; subjected to repetitive avalanche during battery discharge transitions.

Use Value: 390 mJ E_AS withstands inductive kickback from transformer leakage; 13 V/ns dV/dt rating prevents false triggering during fast polarity reversal.

ZVS Resonant Converter

PWM Motor Inverter

Use Scenario: Lagging-leg switch in phase-shifted full-bridge (PSFB) converter for telecom rectifier with 48 V output.

IC Role / Device Role / Timing Role: Zero-voltage switched device turning on under near-zero V_DS; body diode conducts prior to turn-on.

Use Value: Low trr (170 ns) and soft recovery minimize diode reverse recovery loss and associated voltage stress during ZVS transition.

Use Scenario: Upper-arm switch in 3-phase IGBT/MOSFET inverter driving 1–3 HP induction motors in HVAC compressors.

IC Role / Device Role / Timing Role: High-side switching element in 60–120 Hz PWM output stage; experiences repeated commutation with inductive load.

Use Value: Rated 16 A continuous drain current at T_C = 100 °C supports thermal design margin; avalanche rating handles motor regeneration spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF50	R_DS(on) = 0.32 Ω (higher), Q_g = 110 nC (lower), E_AS = 250 mJ (lower), TO-220FP package (no isolated tab)	Limited to lower-power SMPS (<800 W); requires heatsink isolation due to non-isolated tab; less robust in unclamped inductive switching.	Prefer IRFB17N50L where avalanche margin, thermal interface simplicity, or conduction efficiency above 10 A is critical.
IXTH16N50L	R_DS(on) = 0.30 Ω, Q_g = 125 nC, E_AS = 350 mJ, TO-247AC package (larger footprint, lower R_thJC = 0.45 °C/W)	Better thermal performance but larger PCB area; higher cost; same voltage/current class but different gate threshold (2–4 V vs. 3–5 V).	Choose IRFB17N50L for TO-220AB footprint compatibility, cost-sensitive designs, or where 0.56 °C/W R_thJC meets thermal targets.

Compared with STP16NF50 and IXTH16N50L, the IRFB17N50L delivers superior avalanche energy margin (390 mJ), lower on-resistance (0.28 Ω), and a thermally efficient isolated-tab TO-220AB package-making it optimal for space-constrained, high-reliability 500 V power stages requiring robust unclamped switching behavior.

Availability

IRFB17N50L is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-frequency ZVS converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRFB17N50L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRFB17N50L belongs to Vishay's high-voltage power MOSFET family engineered for industrial-grade SMPS, UPS, and resonant converters demanding high avalanche capability, low gate charge, and consistent parametric stability across temperature.

FAQ

What is the maximum continuous drain current rating for IRFB17N50L at 100 °C case temperature?

The IRFB17N50L is rated for 11 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied in thermal design calculations alongside R_thJC = 0.56 °C/W to ensure junction temperature remains ≤150 °C under actual operating conditions. The IRFB17N50L maintains safe operation within this limit when mounted on an adequately sized heatsink with proper thermal interface.

Does IRFB17N50L have a fully isolated drain tab in the TO-220AB package?

Yes, the IRFB17N50L uses a TO-220AB package with electrically isolated drain tab, meaning the metal tab (connected to the drain) is insulated from the mounting surface. This allows direct heatsink attachment without requiring insulating hardware, simplifying thermal design and reducing system cost. The IRFB17N50L datasheet confirms this configuration in the package outline and thermal resistance specifications (R_thCS = 0.50 °C/W).

What is the typical body diode reverse recovery time (trr) of IRFB17N50L at 125 °C junction temperature?

The IRFB17N50L exhibits a typical body diode reverse recovery time (trr) of 220–330 ns at T_J = 125 °C, as specified in the "Drain-Source Body Diode Characteristics" table. This elevated trr versus room temperature (170–250 ns) reflects increased minority carrier lifetime at high temperature and must be accounted for in ZVS timing margins and snubber design. The IRFB17N50L maintains soft recovery behavior across its full operating range.

Is IRFB17N50L suitable for use in avalanche-mode switching applications?

Yes, the IRFB17N50L is explicitly characterized for repetitive and single-pulse avalanche operation, with documented ratings of I_AR = 16 A (repetitive) and E_AS = 390 mJ (single-pulse). These values are measured under standardized conditions (L = 3.0 mH, I_AS = 16 A) and validated per JEDEC guidelines. The IRFB17N50L is routinely deployed in UPS and motor drive inverters where controlled avalanche is part of normal operation.

What is the gate-source threshold voltage (V_GS(th)) range for IRFB17N50L?

The IRFB17N50L has a gate-source threshold voltage range of 3.0 V to 5.0 V, measured at V_DS = V_GS and I_D = 250 μA. This places it in the standard-gate-drive category-not logic-level-requiring ≥10 V gate drive for full enhancement and minimal R_DS(on). The IRFB17N50L achieves its specified 0.28 Ω R_DS(on) only at V_GS = 10 V, confirming its intended use with conventional gate drivers.

IRFB17N50L Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 320mOhm @ 9.9A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2760 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 220W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB17N50L FAQ

1.How can I place an order for IRFB17N50L through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB17N50L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB17N50L reliable?

The price and inventory of IRFB17N50L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB17N50L is usually 5 days.

3.What payment methods are accepted for IRFB17N50L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB17N50L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB17N50L?

IRFB17N50L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB17N50L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB17N50L?

For technical support, including IRFB17N50L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB17N50L requirements.

6.How does Aetrix verify that IRFB17N50L is sourced from the original manufacturer or authorized distributors?

All IRFB17N50L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB17N50L meets industry standards.

7.What is the process for return or replacement of IRFB17N50L?

All IRFB17N50L units undergo pre-shipment inspection (PSI). If there is an issue with IRFB17N50L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB17N50L part is unused and in its original packaging.

Return procedure for IRFB17N50L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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