Vishay Siliconix IRFB17N50LPBF
- Part No.:
- IRFB17N50LPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRFB17N50LPBF.pdf
- Description:
- MOSFET N-CH 500V 16A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:1,547
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Product details
Overview
IRFB17N50LPBF from Vishay Siliconix is a 500 V, 16 A N-channel power MOSFET in TO-220AB package, featuring RDS(on) = 0.28 Ω at VGS = 10 V, Qg = 130 nC, and low trr (170–250 ns) for high-frequency switching in SMPS and ZVS circuits.
For engineers reviewing the IRFB17N50LPBF datasheet, IRFB17N50LPBF pinout, IRFB17N50LPBF application, or IRFB17N50LPBF equivalent, this device is selected for robust avalanche energy handling (EAS = 390 mJ), fast soft-recovery body diode, and stable RDS(on) over temperature in industrial power converters.
Technical Context
This MOSFET employs planar silicon technology with fully characterized avalanche capability and dynamic dV/dt ruggedness up to 13 V/ns. Its gate charge profile (Qgs = 33 nC, Qgd = 59 nC) supports predictable turn-on/turn-off timing in hard-switched topologies.
The device integrates a low-loss body diode with reverse recovery charge Qrr = 470–710 nC (TJ = 25 °C) and exhibits linear SOA behavior up to 10 μs pulses, enabling reliable operation in unclamped inductive switching and PWM inverters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Withstands DC bus voltages up to 400 V in 400 V-class SMPS designs with margin. |
| RDS(on) | 0.28 Ω max at VGS = 10 V - Enables <1.8 W conduction loss at 16 A continuous drain current. |
| Qg | 130 nC - Requires moderate gate drive strength; compatible with standard 1–2 A peak gate drivers. |
| EAS | 390 mJ single-pulse - Supports unclamped inductive switching without external snubbers in UPS and motor drives. |
| trr | 170–250 ns - Soft recovery reduces voltage overshoot and EMI in high-dI/dt (>347 A/μs) applications. |
| RthJC | 0.56 °C/W - Allows 220 W power dissipation at TC = 25 °C with minimal heatsink requirement. |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), through-hole mounting, and 3-pin vertical configuration. Standard lead spacing (2.54 mm) and screw-mount compatibility (6-32/M3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Accepts 0–10 V logic-level drive; ±30 V absolute max rating ensures ESD robustness. |
| D (Drain) | High-side power output | Internally connected to metal tab; requires electrical isolation when mounted to heatsink. |
| S (Source) | Power return/reference node | Serves as local ground reference for gate drive; carries full load current and body diode conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg/Qgd ratio | Qgd/Qg ≈ 45 % - Improves Miller immunity and enables stable operation at high dV/dt rates. |
| Fully characterized Ciss/Coss/Crss | Ciss = 2760 pF, Crss = 37 pF - Enables accurate snubber design and predictive switching loss modeling. |
| Soft-recovery body diode | trr = 170–250 ns, Qrr = 470–710 nC - Reduces switching stress and eliminates need for external anti-parallel diodes in bridge legs. |
| Avalanche-rated | EAS = 390 mJ, IAR = 16 A - Permits operation in non-zero-current-switching (NZCS) and fault-tolerant topologies without derating. |
Applications
| Switch Mode Power Supply (SMPS) | Uninterruptible Power Supply (UPS) |
|---|---|
|
Use Scenario: Primary-side switching in 500 W–1 kW offline flyback and forward converters. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer across transformer primary winding. Use Value: 500 V VDS rating and 390 mJ EAS support safe operation during line surges and startup transients. |
Use Scenario: Inverter stage in online double-conversion UPS delivering clean 230 VAC output. IC Role / Device Role / Timing Role: Half-bridge leg switch managing bidirectional power flow between battery bank and AC output. Use Value: Low trr and soft recovery minimize shoot-through risk and reduce EMI filter burden in high-frequency PWM stages. |
| ZVS Resonant Converters | PWM Motor Inverters |
|
Use Scenario: Lagging-leg switch in phase-shifted full-bridge (PSFB) converters operating at 100–300 kHz. IC Role / Device Role / Timing Role: Zero-voltage switched power transistor synchronized to resonant tank zero-crossings. Use Value: 13 V/ns dV/dt ruggedness and low Coss (84 pF at 400 V) enable reliable ZVS transition under high bus voltage. |
Use Scenario: Output stage in 3-phase BLDC inverter for HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: High-side and low-side switching element in each inverter leg driving motor windings. Use Value: 16 A continuous ID and 64 A pulsed IDM support 1.5 kW motor loads with thermal headroom at 100 °C case temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP16NF50 | RDS(on) = 0.30 Ω, Qg = 110 nC, EAS = 290 mJ, TO-220FP package (shorter leads) | Lower gate charge but reduced avalanche energy; less suitable for unclamped inductive loads. | Preferable where gate drive current is limited and avalanche stress is minimal. |
| IXTH16N50L | RDS(on) = 0.27 Ω, Qg = 145 nC, EAS = 420 mJ, TO-247AC package (higher thermal performance) | Higher thermal resistance to ambient but superior RthJC (0.45 °C/W); larger footprint. | Preferred for >250 W continuous conduction mode designs requiring extended thermal margin. |
Compared with STP16NF50 and IXTH16N50L, the IRFB17N50LPBF offers balanced trade-offs: higher avalanche robustness than STP16NF50 and lower gate drive demand than IXTH16N50L, while maintaining TO-220AB compatibility for legacy board layouts.
Availability
IRFB17N50LPBF is available at Aetrix Electronics and suitable for switch mode power supply (SMPS), uninterruptible power supply (UPS), and high-frequency PWM inverter applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for IRFB17N50LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFB17N50LPBF belongs to Vishay's "L"-series high-voltage power MOSFET family, engineered for ruggedness in hard-switched and resonant converter topologies demanding high dV/dt immunity and repeatable avalanche performance.
FAQ
What is the maximum continuous drain current rating for IRFB17N50LPBF at 100 °C case temperature?
The IRFB17N50LPBF has a continuous drain current rating of 11 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures junction temperature remains within the -55 °C to +150 °C operating range under sustained load conditions. The IRFB17N50LPBF maintains stable RDS(on) performance across this temperature span.
Does IRFB17N50LPBF have a fully rated avalanche capability, and what is its single-pulse energy limit?
Yes, the IRFB17N50LPBF is fully characterized for repetitive and single-pulse avalanche operation. Its single-pulse avalanche energy (EAS) is rated at 390 mJ under test conditions of L = 3.0 mH, Rg = 25 Ω, and IAS = 16 A. This specification is validated per Figure 12 in the official Vishay datasheet S21-0340-Rev. C, confirming robustness in unclamped inductive switching events. The IRFB17N50LPBF supports such operation without degradation when applied within datasheet limits.
What is the typical reverse recovery time (trr) of the body diode in IRFB17N50LPBF, and how does it vary with temperature?
The IRFB17N50LPBF body diode exhibits a typical reverse recovery time (trr) of 170–250 ns at TJ = 25 °C and 220–330 ns at TJ = 125 °C, measured at IF = 16 A and dI/dt = 100 A/μs. This soft recovery behavior minimizes voltage spikes and EMI generation during commutation. The IRFB17N50LPBF's trr increase with junction temperature is consistent with silicon physics and is fully characterized in the datasheet's "Drain-Source Body Diode Characteristics" section.
Is IRFB17N50LPBF RoHS-compliant, and what does the 'PbF' suffix indicate?
Yes, IRFB17N50LPBF is RoHS-compliant. The 'PbF' suffix denotes lead (Pb)-free terminations, confirming compliance with EU RoHS Directive 2011/65/EU and related regional regulations. Vishay explicitly states this in the Ordering Information section of datasheet S21-0340-Rev. C, and the device carries no exemptions for lead content. The IRFB17N50LPBF meets material categorization requirements defined in Vishay document 99912.
What is the gate-source threshold voltage (VGS(th)) range for IRFB17N50LPBF, and how does it affect drive circuit design?
The IRFB17N50LPBF has a gate-source threshold voltage (VGS(th)) range of 3.0 V to 5.0 V at ID = 250 μA, per the datasheet's Static Specifications table. This confirms standard-level (not logic-level) gate drive compatibility, requiring ≥10 V for full enhancement. Drive circuits must ensure stable VGS ≥ 12 V to maintain low RDS(on) and avoid linear-mode operation. The IRFB17N50LPBF's VGS(th) stability over temperature supports predictable turn-on behavior in wide-temperature-range applications.
IRFB17N50LPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 320mOhm @ 9.9A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2760 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 220W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRFB17N50LPBF FAQ
1.How can I place an order for IRFB17N50LPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFB17N50LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFB17N50LPBF reliable?
The price and inventory of IRFB17N50LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB17N50LPBF is usually 5 days.
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IRFB17N50LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFB17N50LPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFB17N50LPBF?
For technical support, including IRFB17N50LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB17N50LPBF requirements.
6.How does Aetrix verify that IRFB17N50LPBF is sourced from the original manufacturer or authorized distributors?
All IRFB17N50LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB17N50LPBF meets industry standards.
7.What is the process for return or replacement of IRFB17N50LPBF?
All IRFB17N50LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB17N50LPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFB17N50LPBF part is unused and in its original packaging.
Return procedure for IRFB17N50LPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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