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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFB17N60K

Name: IRFB17N60K
Brand: Vishay Siliconix
SKU: IRFB17N60K
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB17N60K

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB17N60K.pdf

Description:: MOSFET N-CH 600V 17A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB17N60K from Vishay Siliconix is a 600 V, 17 A N-channel power MOSFET in TO-220 package, featuring R_DS(on) = 0.35 Ω at V_GS = 10 V, Q_g = 99 nC, and rated for repetitive avalanche energy of 34 mJ. It serves as a high-voltage switching element in hard-switched SMPS and UPS inverters.

For engineers reviewing the IRFB17N60K datasheet, IRFB17N60K pinout, IRFB17N60K application, or IRFB17N60K equivalent, key selection criteria include its 600 V blocking capability, 0.35 Ω on-resistance at 10 V gate drive, 99 nC total gate charge, avalanche ruggedness (E_AS = 330 mJ), and TO-220 thermal performance (R_thJC = 0.37 °C/W).

Technical Context

This MOSFET employs planar silicon technology with fully characterized avalanche and dynamic dV/dt ruggedness, enabling reliable operation in unclamped inductive switching. Its gate threshold voltage (3.0–5.0 V) and low Q_gd/Q_g ratio (47/99 nC) support stable hard-switching control under high dV/dt stress up to 11 V/ns.

The device integrates a robust body diode with t_rr = 520–780 ns and Q_rr = 5620–8430 nC at 25 °C, optimized for snubberless flyback and resonant converter topologies where reverse recovery behavior directly impacts switching loss and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V DC bus and universal-input offline SMPS
R_DS(on)	0.35 Ω @ V_GS = 10 V - enables ≤1.2 W conduction loss at 17 A continuous drain current
Q_g	99 nC - determines gate driver current requirement (~10 mA avg. for 100 kHz, 10 V swing)
E_AS	330 mJ - withstands single-pulse inductive energy without failure in UPS hold-up circuits
R_thJC	0.37 °C/W - allows 340 W max power dissipation with minimal case-to-heatsink thermal penalty
t_rr	520–780 ns @ T_J = 25 °C - defines minimum dead-time setting to avoid shoot-through in half-bridge configurations
dV/dt rating	11 V/ns - ensures immunity to parasitic turn-on during high-speed voltage transients in PFC stages

Pinout & Package

IRFB17N60K uses a standard TO-220AB package with isolated tab (drain-connected). The leadframe design provides mechanical stability and direct heatsinking capability through the metal tab.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; threshold 3.0–5.0 V; ±30 V absolute max rating
D (Drain)	High-side power output	Connected to TO-220 tab; 600 V blocking; carries full load current and avalanche energy
S (Source)	Power return / reference	Common node for gate drive return and current sensing; ties to PCB ground plane

Key Features

Feature	Design Value
Low gate charge	Q_g = 99 nC reduces driver complexity and switching loss in 50–200 kHz SMPS
Avalanche ruggedness	Rated for 330 mJ single-pulse and 34 mJ repetitive avalanche energy per cycle
Dynamic dV/dt immunity	11 V/ns rating prevents spurious turn-on in high-di/dt hard-switched converters
Body diode characterization	Q_rr = 5620–8430 nC and t_rr = 520–780 ns enable predictable snubber design
Thermal resistance	R_thJC = 0.37 °C/W supports high-power density layouts with minimal heatsink mass

Applications

Server PSU Primary Switch	Industrial UPS Inverter
Use Scenario: High-efficiency 3.3 kW server power supply operating at 100 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main switch handling 400 V DC input, conducting 17 A peak, switching at 100 kHz with zero-voltage transition assistance. Use Value: 0.35 Ω R_DS(on) minimizes conduction loss; 99 nC Q_g enables clean turn-on with low-cost gate drivers; 330 mJ E_AS absorbs leakage inductance spikes.	Use Scenario: 5 kVA online double-conversion UPS delivering clean sine-wave output during grid outage. IC Role / Device Role / Timing Role: Output inverter switch in full-bridge configuration, switching at 8–12 kHz with 17 A RMS load current. Use Value: 600 V rating accommodates 450 V DC bus; 34 mJ repetitive avalanche rating sustains fault currents during battery-mode overload; TO-220 thermal path supports forced-air cooling.
Telecom Rectifier Module	EV Charger PFC Stage
Use Scenario: -48 V telecom rectifier with boost PFC front-end operating at 150 kHz and 3 kW output. IC Role / Device Role / Timing Role: Boost switch subjected to 400 V DC link, 17 A peak current, and high dV/dt stress during turn-off. Use Value: 11 V/ns dV/dt immunity prevents false triggering; fully characterized C_iss/C_oss/C_rss enables accurate loss modeling; R_thJC = 0.37 °C/W simplifies thermal interface design.	Use Scenario: 11 kW AC/DC on-board charger using two-phase interleaved boost PFC with 600 V bus. IC Role / Device Role / Timing Role: High-side boost switch in each phase, conducting 17 A average, switching at 65 kHz with synchronous rectification. Use Value: Low Q_gd/Q_g ratio (47/99 nC) improves Miller immunity; body diode t_rr < 800 ns limits reverse recovery loss; RoHS-compliant Pb-free variant available for automotive qualification.

Server PSU Primary Switch

Industrial UPS Inverter

Use Scenario: High-efficiency 3.3 kW server power supply operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch handling 400 V DC input, conducting 17 A peak, switching at 100 kHz with zero-voltage transition assistance.

Use Value: 0.35 Ω R_DS(on) minimizes conduction loss; 99 nC Q_g enables clean turn-on with low-cost gate drivers; 330 mJ E_AS absorbs leakage inductance spikes.

Use Scenario: 5 kVA online double-conversion UPS delivering clean sine-wave output during grid outage.

IC Role / Device Role / Timing Role: Output inverter switch in full-bridge configuration, switching at 8–12 kHz with 17 A RMS load current.

Use Value: 600 V rating accommodates 450 V DC bus; 34 mJ repetitive avalanche rating sustains fault currents during battery-mode overload; TO-220 thermal path supports forced-air cooling.

Telecom Rectifier Module

EV Charger PFC Stage

Use Scenario: -48 V telecom rectifier with boost PFC front-end operating at 150 kHz and 3 kW output.

IC Role / Device Role / Timing Role: Boost switch subjected to 400 V DC link, 17 A peak current, and high dV/dt stress during turn-off.

Use Value: 11 V/ns dV/dt immunity prevents false triggering; fully characterized C_iss/C_oss/C_rss enables accurate loss modeling; R_thJC = 0.37 °C/W simplifies thermal interface design.

Use Scenario: 11 kW AC/DC on-board charger using two-phase interleaved boost PFC with 600 V bus.

IC Role / Device Role / Timing Role: High-side boost switch in each phase, conducting 17 A average, switching at 65 kHz with synchronous rectification.

Use Value: Low Q_gd/Q_g ratio (47/99 nC) improves Miller immunity; body diode t_rr < 800 ns limits reverse recovery loss; RoHS-compliant Pb-free variant available for automotive qualification.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP17NK60ZFP	600 V, 17 A, R_DS(on) = 0.38 Ω, Q_g = 85 nC, D²PAK package	Higher thermal resistance (R_thJC = 0.55 °C/W); lower gate charge but larger footprint	Preferred where board space permits and lower Q_g is prioritized over thermal density
IXTH17N60L2	600 V, 17 A, R_DS(on) = 0.32 Ω, Q_g = 110 nC, TO-247 package	Lower on-resistance but higher gate charge and larger TO-247 footprint; no specified E_AS rating	Selected when lowest conduction loss is critical and layout accommodates TO-247 mounting

Compared with STP17NK60ZFP and IXTH17N60L2, the IRFB17N60K offers the best balance of thermal performance (R_thJC = 0.37 °C/W), avalanche robustness (330 mJ E_AS), and industry-standard TO-220 compatibility-making it optimal for space-constrained, high-reliability industrial power supplies where thermal management and fault tolerance are prioritized.

Availability

IRFB17N60K is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-frequency industrial inverters requiring stable component supply and long-term manufacturability.

Supply support for IRFB17N60K includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific characterization.

The IRFB17N60K belongs to Vishay's "K-series" high-voltage power MOSFET family, engineered for demanding hard-switched and avalanche-prone applications such as telecom rectifiers, server PSUs, and UPS systems.

FAQ

What is the maximum continuous drain current rating for IRFB17N60K at 100 °C case temperature?

The IRFB17N60K has a continuous drain current rating of 11 A at T_C = 100 °C, derated linearly from 17 A at 25 °C using a derating factor of 2.7 W/°C. This reflects thermal limitations of the TO-220 package under sustained high-temperature operation, and must be verified against actual heatsink performance in the target application layout.

Does IRFB17N60K support logic-level gate drive?

No, IRFB17N60K is not a logic-level MOSFET. Its gate threshold voltage range is 3.0–5.0 V, and it is specified for R_DS(on) at V_GS = 10 V. Driving it reliably requires a 10 V gate-source voltage; operation below 8 V risks incomplete turn-on and excessive conduction loss. For true 5 V logic compatibility, consider Vishay's SiHF series or dedicated logic-level alternatives.

What is the significance of the "K" suffix in IRFB17N60K?

The "K" suffix in IRFB17N60K denotes Vishay's enhanced ruggedness grade: improved gate oxide integrity, tighter dynamic dV/dt immunity (11 V/ns), fully characterized avalanche performance (E_AS = 330 mJ), and extended body diode reverse recovery specification. It distinguishes this variant from earlier "A" or "U" versions with less stringent stress testing and parameter validation.

Can IRFB17N60K be used in synchronous rectification topologies?

No, IRFB17N60K is not optimized for synchronous rectification. Its body diode exhibits relatively high Q_rr (5620–8430 nC) and t_rr (520–780 ns), resulting in significant reverse recovery loss and EMI when used as a freewheeling diode. Synchronous rectifier designs require MOSFETs with ultra-low Q_rr, fast t_rr, and optimized body diode softness-features not emphasized in the IRFB17N60K datasheet.

Is IRFB17N60K RoHS compliant and what does "PbF" indicate in the ordering code?

Yes, the IRFB17N60KPbF variant is RoHS compliant and lead (Pb)-free. "PbF" explicitly indicates lead-free termination per JEDEC J-STD-609, with matte tin plating. The non-PbF version (IRFB17N60K) contains SnPb terminations and is not RoHS compliant unless exempted. Both share identical electrical and thermal specifications; only the finish differs.

IRFB17N60K Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 420mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 99 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 340W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB17N60K FAQ

1.How can I place an order for IRFB17N60K through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB17N60K on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB17N60K reliable?

The price and inventory of IRFB17N60K are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB17N60K is usually 5 days.

3.What payment methods are accepted for IRFB17N60K?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB17N60K transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB17N60K?

IRFB17N60K orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB17N60K order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB17N60K?

For technical support, including IRFB17N60K datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB17N60K requirements.

6.How does Aetrix verify that IRFB17N60K is sourced from the original manufacturer or authorized distributors?

All IRFB17N60K products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB17N60K meets industry standards.

7.What is the process for return or replacement of IRFB17N60K?

All IRFB17N60K units undergo pre-shipment inspection (PSI). If there is an issue with IRFB17N60K, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB17N60K part is unused and in its original packaging.

Return procedure for IRFB17N60K:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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