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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFB20N50KPBF

Name: IRFB20N50KPBF
Brand: Vishay Siliconix
SKU: IRFB20N50KPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB20N50KPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB20N50KPBF.pdf

Description:: MOSFET N-CH 500V 20A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB20N50KPBF from Vishay Siliconix is a 500 V, 20 A N-channel power MOSFET in TO-220AB package with R_DS(on) = 0.21 Ω at V_GS = 10 V, Q_g = 110 nC, and E_AS = 330 mJ - engineered for hard-switched SMPS, UPS inverters, and high-frequency DC-DC converters requiring robust avalanche capability and low conduction loss.

For engineers reviewing the IRFB20N50KPBF datasheet, IRFB20N50KPBF pinout, IRFB20N50KPBF application, or IRFB20N50KPBF equivalent, key selection criteria include its 500 V blocking rating, 0.21 Ω on-resistance at 10 V gate drive, 110 nC total gate charge, avalanche ruggedness (330 mJ single-pulse), and TO-220AB thermal performance (R_thJC = 0.45 °C/W).

Technical Context

This device employs planar V-groove silicon technology optimized for high-voltage switching with enhanced dV/dt immunity and fully characterized dynamic parameters including C_iss = 2870 pF, C_oss = 320 pF, and C_rss = 34 pF at V_DS = 25 V. Its gate threshold voltage (3.0–5.0 V) ensures compatibility with standard 10 V logic-level drivers.

The integrated body diode supports synchronous rectification and freewheeling in bridge topologies, with t_rr = 520–780 ns and Q_rr = 5.3–8.0 μC at I_F = 20 A and dI/dt = 100 A/μs - enabling reliable operation in high-di/dt hard-switched circuits without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in offline 400 V DC bus and 380 V AC input SMPS designs
R_DS(on) max	0.25 Ω at V_GS = 10 V, T_J = 100 °C - enables <2.5 W conduction loss at 12 A continuous current
Q_g max	110 nC - determines gate driver power requirement (~1.1 mW per MHz at 10 V swing)
E_AS	330 mJ (single-pulse) - withstands unclamped inductive energy in flyback and LLC resonant converters
t_r/t_f	74 ns / 33 ns - supports >500 kHz switching in ZVS/ZCS topologies with minimal overlap loss
T_J range	-55 to +150 °C - qualified for industrial and telecom power systems with extended ambient requirements

Pinout & Package

IRFB20N50KPBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), offering 280 W maximum power dissipation at T_C = 25 °C and 0.45 °C/W junction-to-case thermal resistance for direct heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 0–10 V logic-level drive; 33 nC gate-source charge requires ≥1 A peak driver capability
D (Drain)	High-side power output	Connected to TO-220 tab; electrically isolated but thermally coupled - must be insulated from heatsink unless referenced to system ground
S (Source)	Power return/reference node	Serves as local ground reference for gate drive; source inductance must be minimized to prevent oscillation during fast switching

Key Features

Feature	Design Value
Low Q_g/R_DS(on) ratio	524 nC/Ω - reduces gate drive complexity and improves efficiency in high-frequency SMPS vs. legacy 500 V MOSFETs
Fully characterized avalanche	330 mJ single-pulse E_AS with validated I_AR = 20 A repetitive rating - eliminates need for external clamping in transformer-coupled topologies
Enhanced dV/dt immunity	10 V/ns rated peak diode recovery dV/dt - prevents false turn-on in high-noise bridge configurations
Optimized body diode	t_rr = 520–780 ns and Q_rr = 5.3–8.0 μC - minimizes reverse recovery loss and EMI in hard-switched PFC and half-bridge stages

Applications

Server PSU Primary Switch	Industrial UPS Inverter
Use Scenario: High-efficiency 3 kW server power supply operating from 90–264 VAC input with active clamp forward topology. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 500 V DC link voltage and 20 A peak drain current at 100–300 kHz. Use Value: 0.21 Ω R_DS(on) limits conduction loss to <4.2 W at full load; 330 mJ E_AS absorbs leakage inductance spikes without snubber.	Use Scenario: Online double-conversion UPS delivering clean 230 VAC output during grid failure, using full-bridge inverter stage. IC Role / Device Role / Timing Role: Low-loss switching element in 500 V DC bus inverter leg, operating at 16 kHz PWM with bidirectional current flow. Use Value: Robust body diode (t_rr ≤ 780 ns) enables efficient freewheeling; TO-220AB package allows direct bolt-down heatsinking for 280 W thermal capacity.
Telecom Rectifier Module	EV Charger Auxiliary Supply
Use Scenario: 48 V telecom rectifier converting -54 VDC input to +48 VDC output via phase-shifted full-bridge with synchronous rectification. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch in high-current, high-frequency (500 kHz) LLC resonant converter. Use Value: Low Q_gd/Q_g ratio (54/110 nC) improves Miller immunity; 10 V/ns dV/dt rating prevents spurious turn-on during fast voltage transitions.	Use Scenario: 12 V auxiliary power supply inside EV on-board charger, deriving power from 800 V battery rail via flyback converter. IC Role / Device Role / Timing Role: Primary-side switch in isolated flyback topology operating at 150 kHz with wide input voltage range (400–900 V). Use Value: 500 V V_DS rating provides 20% margin over 800 V bus; 0.45 °C/W R_thJC enables stable operation at 12 A continuous with passive heatsinking.

Server PSU Primary Switch

Industrial UPS Inverter

Use Scenario: High-efficiency 3 kW server power supply operating from 90–264 VAC input with active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 500 V DC link voltage and 20 A peak drain current at 100–300 kHz.

Use Value: 0.21 Ω R_DS(on) limits conduction loss to <4.2 W at full load; 330 mJ E_AS absorbs leakage inductance spikes without snubber.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output during grid failure, using full-bridge inverter stage.

IC Role / Device Role / Timing Role: Low-loss switching element in 500 V DC bus inverter leg, operating at 16 kHz PWM with bidirectional current flow.

Use Value: Robust body diode (t_rr ≤ 780 ns) enables efficient freewheeling; TO-220AB package allows direct bolt-down heatsinking for 280 W thermal capacity.

Telecom Rectifier Module

EV Charger Auxiliary Supply

Use Scenario: 48 V telecom rectifier converting -54 VDC input to +48 VDC output via phase-shifted full-bridge with synchronous rectification.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch in high-current, high-frequency (500 kHz) LLC resonant converter.

Use Value: Low Q_gd/Q_g ratio (54/110 nC) improves Miller immunity; 10 V/ns dV/dt rating prevents spurious turn-on during fast voltage transitions.

Use Scenario: 12 V auxiliary power supply inside EV on-board charger, deriving power from 800 V battery rail via flyback converter.

IC Role / Device Role / Timing Role: Primary-side switch in isolated flyback topology operating at 150 kHz with wide input voltage range (400–900 V).

Use Value: 500 V V_DS rating provides 20% margin over 800 V bus; 0.45 °C/W R_thJC enables stable operation at 12 A continuous with passive heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50	R_DS(on) = 0.25 Ω (typ), Q_g = 90 nC, E_AS = 250 mJ, same TO-220 package	Lower gate charge reduces driver burden but reduced avalanche energy limits use in unclamped inductive loads	Prefer STP20NM50 where gate drive power is constrained and circuit includes external clamping
IXTH20N50L	R_DS(on) = 0.22 Ω (typ), Q_g = 125 nC, E_AS = 380 mJ, TO-247 package	Higher avalanche rating and TO-247 thermal performance suit higher-power (>5 kW) designs but require PCB layout change	Choose IXTH20N50L when upgrading thermal headroom or avalanche margin beyond TO-220 limits

Compared with STP20NM50 and IXTH20N50L, IRFB20N50KPBF delivers optimal balance of avalanche ruggedness (330 mJ), gate drive simplicity (110 nC), and TO-220 thermal capability (280 W), making it ideal for cost-sensitive 1–3 kW industrial and telecom power supplies without layout revision.

Availability

IRFB20N50KPBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-frequency DC-DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRFB20N50KPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The IRFB20N50KPBF belongs to Vishay's high-voltage Power MOSFET family designed specifically for ruggedized industrial and telecom power conversion, emphasizing avalanche endurance, dynamic parameter consistency, and thermal reliability in TO-220 packages.

FAQ

What is the maximum continuous drain current for IRFB20N50KPBF at 100 °C case temperature?

The IRFB20N50KPBF supports 12 A continuous drain current at T_C = 100 °C, derated linearly from 20 A at 25 °C using a 2.2 W/°C factor. This rating assumes proper heatsinking and accounts for R_DS(on) increase with junction temperature - actual current capability depends on layout, airflow, and thermal interface quality in the final design.

Does IRFB20N50KPBF have a fully characterized body diode, and what are its key recovery parameters?

Yes, IRFB20N50KPBF features a fully characterized intrinsic body diode with t_rr = 520–780 ns and Q_rr = 5.3–8.0 μC at I_F = 20 A, dI/dt = 100 A/μs, and T_J = 25 °C. These values are measured and guaranteed in the datasheet, enabling accurate loss modeling in hard-switched bridge and PFC circuits where reverse recovery behavior directly impacts efficiency and EMI.

Is IRFB20N50KPBF RoHS-compliant, and what does the 'PbF' suffix indicate?

Yes, IRFB20N50KPBF is RoHS-compliant - the 'PbF' suffix denotes lead (Pb)-free terminations per EU Directive 2011/65/EU. The device uses matte tin plating on leads and meets all substance restrictions, including cadmium, hexavalent chromium, mercury, PBB, and PBDE. Full compliance documentation is available in Vishay's material declaration portal.

What is the gate threshold voltage range for IRFB20N50KPBF, and how does it affect drive circuit design?

The gate threshold voltage (V_GS(th)) for IRFB20N50KPBF is specified from 3.0 V to 5.0 V at I_D = 250 μA. This range confirms compatibility with standard 10 V gate drivers while allowing partial enhancement near 5 V - however, full enhancement requires ≥10 V to achieve rated R_DS(on), so drive circuits must deliver stable 10–15 V with sufficient peak current to charge 110 nC gate capacitance rapidly.

Can IRFB20N50KPBF be used in avalanche mode, and what is its rated single-pulse avalanche energy?

Yes, IRFB20N50KPBF is fully rated for repetitive and single-pulse avalanche operation, with E_AS = 330 mJ (single-pulse) and I_AR = 20 A (repetitive) under defined test conditions. This capability is validated per JEDEC standards and enables safe operation in circuits with unclamped inductive energy, such as flyback transformers and motor drive freewheel paths - no external protection is required if within datasheet limits.

IRFB20N50KPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 250mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2870 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 280W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB20N50KPBF FAQ

1.How can I place an order for IRFB20N50KPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB20N50KPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB20N50KPBF reliable?

The price and inventory of IRFB20N50KPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB20N50KPBF is usually 5 days.

3.What payment methods are accepted for IRFB20N50KPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB20N50KPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB20N50KPBF?

IRFB20N50KPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB20N50KPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB20N50KPBF?

For technical support, including IRFB20N50KPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB20N50KPBF requirements.

6.How does Aetrix verify that IRFB20N50KPBF is sourced from the original manufacturer or authorized distributors?

All IRFB20N50KPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB20N50KPBF meets industry standards.

7.What is the process for return or replacement of IRFB20N50KPBF?

All IRFB20N50KPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB20N50KPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB20N50KPBF part is unused and in its original packaging.

Return procedure for IRFB20N50KPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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