Infineon Technologies IRFB3206GPBF

Overview

IRFB3206GPBF from Infineon Technologies (formerly International Rectifier) is a 60V, 2.4 mΩ typ. N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-current synchronous rectification and hard-switched SMPS topologies. It delivers 210A silicon-limited continuous drain current at 25°C, features 120 nC total gate charge, and incorporates an enhanced body diode with 33 ns typical reverse recovery time (TJ = 25°C, VR = 51 V, IF = 75 A).

For engineers reviewing the IRFB3206GPBF datasheet, IRFB3206GPBF pinout, IRFB3206GPBF application, or IRFB3206GPBF equivalent, key selection criteria include its 0.50 °C/W junction-to-case thermal resistance, avalanche-rated 300 mJ single-pulse energy, and validated dV/dt ruggedness for high-frequency power conversion stages in UPS and telecom rectifiers.

Technical Context

This MOSFET employs planar vertical DMOS cell architecture with optimized gate oxide thickness and trench-assisted field shaping to achieve improved dynamic dV/dt immunity and reduced Miller capacitance (Crss = 360 pF). Its body diode is engineered for fast, soft recovery-critical for minimizing switching losses in synchronous buck converters operating above 200 kHz.

The device's SOA is thermally limited by RθJC = 0.50 °C/W and defined up to 100 µs pulse width at 210A, with avalanche capability characterized under unclamped inductive switching (UIS) conditions using L = 0.023 mH, RG = 25 Ω, and IAS = 120 A. Gate threshold voltage exhibits a positive temperature coefficient (0.07 V/°C), supporting stable parallel operation.

Key Specifications

Pinout & Package

IRFB3206GPBF uses the standard TO-220AB package with isolated tab (drain-connected), featuring three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the drain and must be insulated from chassis unless drain is at ground potential.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60 V power MOSFET applications.

Compared with STP210N6F6 and IXFH32N60X3, IRFB3206GPBF uniquely balances isolated-tab mechanical safety, 210 A silicon-limited current, and 300 mJ avalanche energy-making it optimal for high-reliability 48 V industrial SMPS where thermal, electrical, and safety margins are simultaneously constrained.

Availability

IRFB3206GPBF is available at Aetrix Electronics and suitable for high-efficiency telecom rectifiers, uninterruptible power supplies (UPS), and industrial motor drive inverters requiring stable component supply across extended production lifecycles.

Supply support for IRFB3206GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-current, high-frequency power conversion in industrial-grade power supplies, UPS systems, and motor drives demanding ruggedness and thermal stability.

FAQ

What is the maximum continuous drain current for IRFB3206GPBF at 100°C case temperature?

The maximum continuous drain current at TC = 100°C is 150 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating from the 210 A rating at 25°C and reflects the device's ability to sustain high current under elevated thermal conditions when properly heatsinked.

Does IRFB3206GPBF have a fully rated body diode for synchronous rectification?

Yes-the integrated body diode is characterized for ISD ≤ 75 A and di/dt ≤ 360 A/µs at TJ ≤ 175°C, with trr = 33 ns (TJ = 25°C) and Qrr = 41 nC. These parameters are validated for use in synchronous rectification, though external Schottky diodes may still be preferred in ultra-high-frequency (>1 MHz) designs.

Can IRFB3206GPBF be used in surface-mount assemblies?

No-IRFB3206GPBF uses the TO-220AB through-hole package and is explicitly not recommended for surface-mount applications per the manufacturer's note on page 8 of the datasheet. Its mechanical design, thermal path, and lead geometry require through-hole mounting with screw-down heatsink attachment.

What is the gate threshold voltage range and how does it vary with temperature?

VGS(th) ranges from 2.0 V to 4.0 V at 25°C, with a positive temperature coefficient of 0.07 V/°C. As junction temperature rises, threshold voltage increases-e.g., from ~2.8 V at 25°C to ~3.5 V at 125°C-improving short-circuit immunity and enabling stable parallel operation without current hogging.