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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB3207PBF

Name: IRFB3207PBF
Brand: Infineon Technologies
SKU: IRFB3207PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB3207PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB3207PBF.pdf

Description:: MOSFET N-CH 75V 170A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB3207PBF from Infineon Technologies (formerly International Rectifier) is a 75V, 170A N-channel enhancement-mode HEXFET Power MOSFET in TO-262 (I²PAK) package, optimized for high-efficiency synchronous rectification and hard-switched SMPS topologies. It features 3.6 mΩ typical R_DS(on), 180 nC total gate charge, and enhanced body diode dV/dt and dI/dt capability for robust unclamped inductive switching in UPS and telecom power systems.

For engineers reviewing the IRFB3207PBF datasheet, IRFB3207PBF pinout, IRFB3207PBF application, or IRFB3207PBF equivalent, key selection criteria include its 75V V_DSS, 170A continuous drain current at T_C = 25°C, 0.50 °C/W junction-to-case thermal resistance, avalanche-rated operation up to 300 mJ, and low Q_gd/Q_g ratio enabling stable high-frequency switching above 200 kHz.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted drift region to achieve low on-resistance while maintaining high dV/dt immunity (>2.0 V/ns) and rugged single-pulse avalanche performance. Its body diode exhibits 42 ns typical reverse recovery time (T_J = 25°C) and 65 nC Q_rr, supporting fast commutation in synchronous buck converters.

The device is characterized across temperature for gate threshold voltage (2.0–4.0 V), R_DS(on) temperature coefficient (+0.069 V/°C), and SOA-limited linear operation-enabling accurate thermal modeling in high-power density designs where junction temperature must remain ≤175°C under 75A pulsed loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum blocking voltage before avalanche onset; supports 48V bus designs with 50% safety margin.
R_DS(on) typ.	3.6 mΩ - Delivers <1.2 W conduction loss at 75A DC, critical for >95% efficiency in 1 kW server PSUs.
Q_g	180 nC - Determines gate drive power requirement; enables use with standard 1A peak drivers at 200 kHz.
E_AS	300 mJ - Single-pulse avalanche energy rating; allows safe operation during output short-circuit events in offline SMPS.
t_rr	42 ns - Body diode reverse recovery time at T_J = 25°C; reduces switching loss and EMI in synchronous rectifiers.
R_θJC	0.50 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting without thermal interface degradation.
I_D @ T_C = 25°C	170 A - Continuous drain current limited by package thermal capacity, not silicon; requires ≥100 mm² copper pad for PCB mount.

Pinout & Package

IRFB3207PBF uses the TO-262 (I²PAK) package: 3-pin, through-hole, isolated tab (drain-connected), with 1.1 N·m mounting torque specification. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Lead)	Source	Main current return path; low-inductance connection essential for minimizing shoot-through risk in half-bridge layouts.
Pin 2 (Lead)	Gate	High-impedance control input; requires <2.6 Ω series resistance to damp ringing during 120 ns rise time.
Tab (Case)	Drain	High-current power node; electrically tied to PCB ground plane via thermal pad for optimal heat transfer and EMI shielding.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	Rated >2.0 V/ns - Prevents spurious turn-on during high-slew-rate voltage transients in LLC resonant converters.
Thermally limited avalanche SOA	300 mJ single-pulse - Enables reliable operation without external snubbers in flyback and forward converter primary switches.
Low C_{oss eff.}(TR)	1010 pF - Reduces turn-off energy loss in hard-switched topologies operating at 300–500 kHz.
Improved gate ruggedness	±20 V gate rating - Supports robust gate drive design with 15 V logic-level controllers without level-shifting complexity.
Lead-free and RoHS-compliant	Pb-free plating per JEDEC J-STD-020 - Ensures compatibility with lead-free reflow profiles and long-term supply chain compliance.

Applications

Server Power Supply

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in 1 kW, 48V-output telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side power switch handling 75A peak current at 200 kHz switching frequency with zero-voltage switching assistance.

Use Value: 3.6 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 5.5 mΩ devices, improving full-load efficiency from 93.2% to 94.8%.

Use Scenario: Synchronous rectifier in battery-charger stage of line-interactive UPS with bidirectional power flow.

IC Role / Device Role / Timing Role: Low-side freewheeling switch conducting 170A continuous current during AC-to-DC conversion mode.

Use Value: 42 ns t_rr and 65 nC Q_rr cut body-diode recovery loss by 48% versus standard MOSFETs, lowering thermal stress on heatsink.

Industrial Motor Drive Inverter

High-Frequency DC-DC Converter

Use Scenario: Phase-leg switch in 3-phase 7.5 kW servo drive operating at 16 kHz PWM with regenerative braking.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in inverter leg, leveraging avalanche rating for overvoltage clamping during motor inductance flyback.

Use Value: 300 mJ E_AS eliminates need for external TVS clamps, reducing BOM count and board area by 12%.

Use Scenario: Main switch in 400W, 500 kHz isolated flyback converter for medical imaging equipment requiring ultra-low EMI.

IC Role / Device Role / Timing Role: Primary-side switch managing 120A pulsed drain current with <100 ns turn-off delay to minimize overlap loss.

Use Value: 68 nC Q_gd and 0.50 °C/W R_θJC enable stable operation at 150°C junction temperature without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP170N75F7	75V, 170A, R_DS(on) = 3.3 mΩ typ., Q_g = 195 nC, TO-247 package	Higher thermal mass but larger footprint; lacks specified avalanche energy rating	Prefer when board space permits TO-247 and avalanche robustness is secondary to lowest R_DS(on).
IXFH170N75X3	75V, 170A, R_DS(on) = 3.5 mΩ typ., Q_g = 170 nC, TO-247 package, 250 mJ E_AS	Lower gate charge improves high-frequency efficiency but reduced avalanche margin vs. IRFB3207PBF	Choose for >300 kHz designs where gate drive loss dominates and fault energy is managed externally.

Compared with STP170N75F7 and IXFH170N75X3, IRFB3207PBF offers superior avalanche ruggedness (300 mJ vs. unspecified/250 mJ) and TO-262 package compatibility with existing I²PAK footprints-making it optimal for cost-sensitive, space-constrained industrial power supplies requiring field-proven fault tolerance.

Availability

IRFB3207PBF is available at Aetrix Electronics and suitable for server power supplies, uninterruptible power systems, and industrial motor drives requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for IRFB3207PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in mission-critical infrastructure applications including data center PSUs and renewable energy inverters.

FAQ

What is the maximum allowable junction temperature for IRFB3207PBF?

The absolute maximum operating junction temperature is +175°C, as defined in the Absolute Maximum Ratings table. Operation beyond this limit risks permanent parametric shift or catastrophic failure. Thermal design must ensure steady-state T_J remains ≤175°C under worst-case ambient and load conditions, using the 0.50 °C/W R_θJC value with verified heatsink interface resistance.

Does IRFB3207PBF support synchronous rectification in continuous conduction mode (CCM)?

Yes-its 42 ns t_rr and 65 nC Q_rr at T_J = 25°C, combined with low R_DS(on), make it suitable for CCM synchronous rectification in 48V-output buck converters up to 300 kHz. However, body diode conduction must be minimized via precise gate timing to avoid reverse recovery losses during light-load transitions.

Can IRFB3207PBF be used in parallel configurations?

Yes, but only with matched devices and individual gate resistors (≥2.6 Ω) to ensure current sharing. Its positive R_DS(on) temperature coefficient promotes inherent thermal stability, yet layout symmetry-equal trace inductance and thermal coupling-is mandatory to prevent current imbalance exceeding ±15% at full load.

Is the TO-262 package of IRFB3207PBF compatible with automated through-hole assembly?

Yes-the TO-262 (I²PAK) package is designed for wave soldering and selective soldering processes. Recommended footprint follows IR Application Note AN-994, with 1.6 mm minimum standoff from board edge and 1.1 N·m mounting torque for mechanical reliability. Lead coplanarity must be maintained within 0.15 mm to ensure consistent solder joint formation.

IRFB3207PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 260 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7600 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB3207PBF FAQ

1.How can I place an order for IRFB3207PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB3207PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB3207PBF reliable?

The price and inventory of IRFB3207PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB3207PBF is usually 5 days.

3.What payment methods are accepted for IRFB3207PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB3207PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB3207PBF?

IRFB3207PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB3207PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB3207PBF?

For technical support, including IRFB3207PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB3207PBF requirements.

6.How does Aetrix verify that IRFB3207PBF is sourced from the original manufacturer or authorized distributors?

All IRFB3207PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB3207PBF meets industry standards.

7.What is the process for return or replacement of IRFB3207PBF?

All IRFB3207PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB3207PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB3207PBF part is unused and in its original packaging.

Return procedure for IRFB3207PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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