Infineon Technologies IRFB3256PBF

Overview

IRFB3256PBF from Infineon Technologies is a 60V, 2.7mΩ (typ), 206A silicon-limited N-channel HEXFET Power MOSFET in TO-220AB package, optimized for high-current synchronous rectification and hard-switched SMPS topologies. It features enhanced avalanche ruggedness (EAS = 820 mJ), low Coss eff. (TR) = 1400 pF, and fast body diode recovery (trr = 43 ns at 25°C) enabling efficient operation in UPS and telecom power systems.

For engineers reviewing the IRFB3256PBF datasheet, IRFB3256PBF pinout, IRFB3256PBF application, or IRFB3256PBF equivalent, key selection criteria include its 0.50°C/W junction-to-case thermal resistance, gate charge profile (Qg = 130–195 nC), avalanche-rated pulse current (IAS = 75 A), and SOA compliance up to 100 μs at 100 A and 48 V.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted body diode design to achieve simultaneous low RDS(on), high dV/dt immunity (>2.0 V/ns), and robust unclamped inductive switching capability. Its gate threshold voltage (VGS(th) = 2.0–4.0 V) and forward transconductance (gfs = 88 S) support stable drive under wide temperature range (−55°C to +175°C).

The device integrates a monolithic intrinsic p-n body diode with characterized reverse recovery (Qrr = 58 nC, IRRM = 2.4 A) and dI/dt capability (≤890 A/μs), making it suitable for synchronous rectifier control where diode conduction and commutation losses dominate efficiency.

Key Specifications

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard through-hole mounting, and 340 °C max soldering temperature (10 s). Not recommended for surface-mount use.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Compared with STP110N6F6 and IXTH100N60L2, IRFB3256PBF delivers optimal balance of ultra-low RDS(on), validated 820 mJ avalanche robustness, and TO-220AB compatibility-making it the preferred choice for space-constrained, high-reliability 48–60 V power stages where thermal density and transient resilience are co-critical.

Availability

IRFB3256PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply inverters, and high-frequency hard-switched power converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFB3256PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-current, high-ruggedness switching in server, telecom, and industrial power supplies where conduction loss, thermal management, and unclamped inductive reliability are primary design constraints.

FAQ

What is the maximum continuous drain current for IRFB3256PBF at 100°C case temperature?

At TC = 100°C, the continuous drain current is 172 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value reflects derating from the 206 A rating at 25°C due to thermal constraints, and assumes VGS = 10 V and proper heatsinking with RθJC = 0.50°C/W maintained.

Can IRFB3256PBF be used in parallel configurations?

Yes-its positive RDS(on) temperature coefficient (see Fig. 4) ensures inherent current sharing when paralleled. Designers must match gate drive loop inductance and use individual gate resistors (≥2.7 Ω) to suppress oscillation; layout symmetry and thermal coupling between devices are critical to avoid thermal runaway.

Is the body diode suitable for reverse recovery in ZVS circuits?

Yes-the body diode is fully characterized with trr = 43 ns (25°C) and Qrr = 58 nC, and supports dI/dt ≤ 890 A/μs. These parameters enable reliable zero-voltage switching in phase-shifted full-bridge and LLC topologies when paired with appropriate gate timing and snubbing.

Does IRFB3256PBF require gate protection against voltage transients?

While VGS(max) = ±20 V provides margin, the device benefits from external gate protection-especially in noisy environments-using a 12–15 V Zener clamp (e.g., BZX84-C12) between gate and source. This prevents gate oxide stress from Miller-induced spikes exceeding 10 V during high-dV/dt switching.