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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB3306PBFXKMA1

Name: IRFB3306PBFXKMA1
Brand: Infineon Technologies
SKU: IRFB3306PBFXKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB3306PBFXKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IRFB3306PBFXKMA1.pdf

Description:: TRENCH 40<-<100V

Quantity:: RFQ Add To RFQ list

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Inventory:988

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Product details

Overview

IRFB3306PBFXKMA1 from Infineon Technologies (formerly International Rectifier) is a 60V, 3.3mΩ typ. N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, rated for 120A continuous drain current (package-limited) and 160A silicon-limited, optimized for high-frequency hard-switched SMPS and synchronous rectification with enhanced body diode dV/dt and dI/dt capability.

For engineers reviewing the IRFB3306PBFXKMA1 datasheet, IRFB3306PBFXKMA1 pinout, IRFB3306PBFXKMA1 application, or IRFB3306PBFXKMA1 equivalent, key selection criteria include its 4.2mΩ max. R_DS(on), 85nC typical total gate charge, 720pF effective output capacitance (energy-related), 1.3V body diode forward voltage, and avalanche-rated 620mJ single-pulse energy - critical for UPS and high-reliability power conversion designs.

Technical Context

This MOSFET employs planar stripe cell technology with optimized gate oxide and source metallization to improve dynamic ruggedness. Its low Q_gd/Q_g ratio (26nC/85nC ≈ 30.6%) supports fast, controllable switching in hard-switched topologies while maintaining robust dv/dt immunity up to 1.5V/ns under specified conditions.

The integrated body diode is characterized for reverse recovery (t_rr = 31ns @ T_J = 25°C, Q_rr = 34nC), enabling reliable operation in synchronous rectifier configurations without external Schottky supplementation. Thermal resistance R_θJC is 0.65°C/W, validated for junction-to-case conduction in forced-air or heatsink-mounted deployments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48V systems.
R_DS(on) typ.	3.3mΩ - Conduction loss at 10V V_GS; yields ~3W dissipation at 100A, enabling high-efficiency power stages.
I_D (pkg-limited)	120A - Continuous safe operating current with case temperature ≤25°C and adequate heatsinking.
Q_g typ.	85nC - Total gate charge determining driver strength requirement; enables <100ns turn-on with 1A driver.
C_{oss eff.} (ER)	720pF - Energy-related output capacitance governing turn-off loss in hard-switched converters.
E_AS	620mJ - Single-pulse avalanche energy rating; supports unclamped inductive switching in UPS and motor drives.
V_SD	1.3V - Body diode forward voltage at 75A; impacts conduction loss during freewheeling in synchronous rectifiers.

Pinout & Package

IRFB3306PBFXKMA1 is housed in a TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole configuration, and RoHS-compliant lead-free finish. Mounting torque: 10 lb·in (1.1 N·m).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path to high-side switch node	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink.
Source	Reference node for gate drive and current sensing	Low-inductance return path; used for shunt-based current monitoring in half-bridge legs.
Gate	Control terminal for channel modulation	High-impedance input requiring <85nC charge; sensitive to ESD; must be driven with low-impedance path to minimize ringing.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	620mJ single-pulse E_AS with thermal failure margin verified per JEDEC JESD24-11.
Optimized body diode recovery	31ns t_rr and 34nC Q_rr at 25°C enable clean commutation in synchronous rectifier mode.
Low gate charge ratio	Q_gd/Q_g = 30.6% reduces Miller-induced switching instability in high-dV/dt environments.
Thermally robust packaging	R_θJC = 0.65°C/W allows 120A operation with ΔT_J-C ≤78°C under 25°C case ambient.
Lead-free & halogen-free	Complies with RoHS Directive 2011/65/EU and IEC 61249-2-21 for green manufacturing.

Applications

Server PSU Synchronous Rectification

Industrial UPS Inverter Stage

Use Scenario: Secondary-side synchronous rectification in 48V-output server PSUs operating at 300–500kHz.

IC Role / Device Role / Timing Role: Low-side power switch replacing Schottky diodes to reduce conduction loss and improve efficiency >96%.

Use Value: 3.3mΩ R_DS(on) cuts conduction loss by ~65% vs. 40V Schottky, directly increasing full-load efficiency by 0.8–1.2%.

Use Scenario: High-current DC-AC inverter stage in 3kVA industrial uninterruptible power supplies.

IC Role / Device Role / Timing Role: Hard-switched N-channel switch in H-bridge output stage handling 120A peak load currents.

Use Value: 620mJ E_AS rating ensures reliable operation during short-circuit events and line transients without derating.

Telecom Rectifier Modules

High-Frequency DC-DC Converters

Use Scenario: Primary-side switching in telecom rectifier modules converting -48V DC to intermediate bus voltages.

IC Role / Device Role / Timing Role: High-speed power switch in phase-shifted full-bridge topology operating at 200kHz.

Use Value: 720pF C_{oss eff.}(ER) minimizes turn-off energy loss, reducing switching loss by ~22% versus comparable 4.5mΩ devices.

Use Scenario: Output-stage switch in isolated 12V–1V point-of-load converters for AI accelerators.

IC Role / Device Role / Timing Role: Low-R_DS(on) high-current switch in synchronous buck converter with 100A+ output.

Use Value: 120A package-limited current supports single-device 100A designs without paralleling, simplifying layout and reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFS3306PbF (D2Pak)	Same die, but D2Pak package; R_θJA = 40°C/W (PCB mount) vs. 62°C/W for TO-220AB; higher parasitic inductance.	Better PCB thermal performance; unsuitable for through-hole legacy boards or heatsink mounting.	Select for surface-mount designs where board-level heat spreading is prioritized over mechanical robustness.
IRFSL3306PbF (TO-262)	Identical die and specs; TO-262 offers same isolation as TO-220AB but with surface-mount footprint and no mounting hole.	Eliminates screw mounting; requires reflow-compatible pad design and thermal via strategy.	Choose when transitioning from through-hole to SMT while retaining identical electrical behavior and thermal interface.

Compared with IRFS3306PbF and IRFSL3306PbF, IRFB3306PBFXKMA1 provides optimal mechanical stability and heatsink compatibility in legacy TO-220AB layouts, with proven reliability in high-vibration industrial UPS and telecom infrastructure - where mounting torque control and tab isolation are critical.

Availability

IRFB3306PBFXKMA1 is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply inverters, and high-frequency hard-switched DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IRFB3306PBFXKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET innovation dating to the HEXFET architecture introduced by International Rectifier.

This device belongs to the legacy HEXFET Power MOSFET product line, engineered specifically for high-current, high-ruggedness power conversion in industrial, telecom, and computing infrastructure - emphasizing avalanche survivability, body diode dynamics, and thermal predictability.

FAQ

What is the maximum continuous drain current for IRFB3306PBFXKMA1 at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 110A, as specified in the Absolute Maximum Ratings table. This value reflects silicon-limited conduction capacity under thermal constraint, distinct from the 120A rating at 25°C case temperature. Operation above this current risks exceeding T_Jmax = 175°C even with ideal heatsinking.

Is IRFB3306PBFXKMA1 suitable for avalanche operation in unclamped inductive switching?

Yes - it is fully characterized for single-pulse avalanche with E_AS = 620mJ at T_J = 25°C. Repetitive avalanche is permitted only if average power dissipation stays within thermal limits and junction temperature remains below 175°C, per AN-1005 guidelines. Pulse width and duty cycle must be strictly controlled per Figures 14 and 15.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

At 75A, its V_SD = 1.3V exceeds typical Schottky forward voltage (~0.5V), but its 31ns t_rr and low Q_rr eliminate reverse recovery losses. In high-frequency operation (>200kHz), net system efficiency improves due to absence of Schottky leakage and thermal runaway risk - especially at elevated temperatures where Schottky V_F degrades.

What is the recommended gate resistor value for hard-switched 200kHz operation?

A 10Ω gate resistor is recommended to balance switching speed and ringing suppression. With Q_g = 85nC and typical 12V gate drive, this yields ~1μs turn-on time - sufficient to minimize overlap loss while containing dv/dt-induced shoot-through in half-bridge configurations. Layout-dependent parasitics may require empirical tuning between 5–15Ω.

IRFB3306PBFXKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tube

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IRFB3306PBFXKMA1 FAQ

1.How can I place an order for IRFB3306PBFXKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB3306PBFXKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB3306PBFXKMA1 reliable?

The price and inventory of IRFB3306PBFXKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB3306PBFXKMA1 is usually 5 days.

3.What payment methods are accepted for IRFB3306PBFXKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB3306PBFXKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB3306PBFXKMA1?

IRFB3306PBFXKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB3306PBFXKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB3306PBFXKMA1?

For technical support, including IRFB3306PBFXKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB3306PBFXKMA1 requirements.

6.How does Aetrix verify that IRFB3306PBFXKMA1 is sourced from the original manufacturer or authorized distributors?

All IRFB3306PBFXKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB3306PBFXKMA1 meets industry standards.

7.What is the process for return or replacement of IRFB3306PBFXKMA1?

All IRFB3306PBFXKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRFB3306PBFXKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB3306PBFXKMA1 part is unused and in its original packaging.

Return procedure for IRFB3306PBFXKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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