Infineon Technologies IRFB4137PBF

Overview

IRFB4137PBF from Infineon Technologies (formerly International Rectifier) is a 300 V, 38 A N-channel enhancement-mode power MOSFET in TO-220AB package, optimized for high-frequency hard-switched and synchronous rectification applications. It delivers 56 mΩ typical R_DS(on) at V_GS = 10 V, supports 152 A pulsed drain current, and features enhanced body diode dV/dt (8.9 V/ns) and dI/dt capability-enabling robust operation in UPS and SMPS secondary-side rectification.

For engineers reviewing the IRFB4137PBF datasheet, IRFB4137PBF pinout, IRFB4137PBF application, or IRFB4137PBF equivalent, key selection criteria include its 300 V V_DS, 56 mΩ R_DS(on), 83 nC total gate charge, 341 W P_D at T_C = 25°C, and validated avalanche energy rating of 414 mJ-critical for reliability in unclamped inductive switching and high-reliability industrial power systems.

Technical Context

This HEXFET® device uses planar stripe silicon technology with optimized cell pitch and gate oxide thickness to balance conduction loss and switching speed. Its dynamic parameters-including 26–39 nC Q_gd, 23 ns rise time, and 20 ns fall time at I_D = 24 A-are characterized under 195 V V_DD and 2.2 Ω gate resistance, supporting >200 kHz operation in resonant and phase-shifted topologies.

The MOSFET integrates a fast, soft-recovery body diode with 302 ns t_rr (T_J = 25°C), 1739 nC Q_rr, and 13 A I_RRM, enabling efficient synchronous rectification without external Schottky diodes. Thermal design is supported by R_θJC = 0.44 °C/W and linear derating of 2.3 W/°C above 25°C case temperature.

Key Specifications

Pinout & Package

IRFB4137PBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), rated for 300°C soldering (10 s, 1.6 mm from case) and 10 lbf·in mounting torque. The package provides low thermal resistance (R_θJC = 0.44 °C/W) and mechanical stability for high-power industrial mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STW30NM50FD and IXFH30N30P, IRFB4137PBF offers the lowest R_DS(on) (69 mΩ max) and highest continuous current (38 A) in TO-220AB, making it optimal for space-constrained, high-current 300 V applications where thermal performance and switching speed are prioritized over ultra-high voltage headroom.

Availability

IRFB4137PBF is available at Aetrix Electronics and suitable for uninterruptible power supplies, server SMPS synchronous rectification, and industrial motor drive inverters requiring stable component supply across extended production lifecycles.

Supply support for IRFB4137PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support its high-performance power MOSFET portfolio, including the HEXFET® family.

The IRFB4137PBF belongs to the industrial-grade HEXFET® power MOSFET product line, engineered specifically for high-reliability, high-efficiency switching in SMPS, UPS, and motor control applications demanding rugged avalanche performance and fast body diode recovery.

FAQ

Is IRFB4137PBF suitable for surface-mount assembly?

No. IRFB4137PBF uses the TO-220AB package, which is explicitly not recommended for surface-mount applications per the manufacturer's package outline documentation. It requires through-hole mounting with mechanical screw attachment and thermal interface to a heatsink. Surface-mount alternatives would require different package types such as D²PAK or LFPAK.

What is the maximum safe operating temperature for continuous operation?

The IRFB4137PBF has a maximum operating junction temperature of +175°C and a storage temperature range of –55°C to +175°C. For continuous operation, case temperature must be limited to ensure junction temperature remains within spec-derating begins at T_C = 25°C with 2.3 W/°C linear reduction, allowing ~27 A continuous current at T_C = 100°C per the datasheet curve (Fig. 9).

Does IRFB4137PBF require a negative gate voltage for reliable turn-off?

No. The gate threshold voltage is specified from 3.0 V to 5.0 V, and the device is fully enhanced at V_GS = 10 V. While V_GS rating extends to ±20 V, a negative gate bias is not required for turn-off. However, applying –5 V to –10 V can improve noise immunity in high-dV/dt environments, though it is not mandatory per datasheet operation conditions.

Can IRFB4137PBF replace IRFP4110 in existing designs?

IRFB4137PBF is not a direct replacement for IRFP4110: the latter is a 400 V, 28 A device with higher R_DS(on) (85 mΩ) and different gate charge profile. Substitution requires verification of voltage margin, thermal performance, and gate driver compatibility. IRFB4137PBF offers lower R_DS(on) and higher current but reduced V_DS rating-making it unsuitable for 400 V bus applications without redesign.