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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB7734PBF

Name: IRFB7734PBF
Brand: Infineon Technologies
SKU: IRFB7734PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB7734PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB7734PBF.pdf

Description:: MOSFET N-CH 75V 183A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB7734PBF from Infineon Technologies (formerly International Rectifier) is a 75V, 183A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-current switching in motor drives and DC/DC converters. It delivers typ. R_DS(on) of 2.8 mΩ at V_GS = 10 V, supports 650 A pulsed drain current, and features enhanced body diode dV/dt and dI/dt capability for robust synchronous rectification.

For engineers reviewing the IRFB7734PBF datasheet, IRFB7734PBF pinout, IRFB7734PBF application, or IRFB7734PBF equivalent, key selection criteria include its 75 V V_DS, 2.8 mΩ on-resistance, 183 A continuous drain rating at T_C = 25°C, avalanche energy rating of 350 mJ (single-pulse), and TO-220AB thermal resistance of 0.51 °C/W junction-to-case.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted gate structure to achieve low R_DS(on) while maintaining high dV/dt immunity (>5.1 V/ns) and fully characterized avalanche SOA. Its gate threshold voltage (2.1–3.7 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers.

The device integrates a fast, soft-recovery body diode with t_rr = 47 ns (T_J = 25°C), Q_rr = 76 nC, and I_RRM = 2.8 A - enabling efficient operation in hard-switched half-bridge and resonant topologies without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage for 48 V bus systems with 50% safety margin against transients.
R_DS(on) typ.	2.8 mΩ at V_GS = 10 V, I_D = 100 A - Enables <1.4 W conduction loss at 100 A, critical for high-efficiency motor inverters.
I_D cont.	183 A at T_C = 25°C - Supports high-power brushed/BLDC motor drive stages without parallel devices.
E_AS	350 mJ single-pulse avalanche energy - Withstands unclamped inductive switching stress in bridge configurations without snubbers.
Q_g	180–270 nC - Dictates gate driver power requirement; compatible with 2–3 A peak gate drivers for <100 ns switching transitions.
t_r/t_f	123 ns / 100 ns - Enables >100 kHz PWM operation in DC/DC converters with controlled EMI profile.
dv/dt rating	5.1 V/ns - Ensures noise-immune operation in high-dV/dt environments like inverter outputs and OR-ing circuits.

Pinout & Package

IRFB7734PBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), offering mechanical robustness and direct heatsink mounting via M3 screw (1.1 N·m torque). Thermal resistance R_θJC is 0.51 °C/W, enabling high-power dissipation with minimal thermal derating.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab; must be electrically isolated from heatsink unless system design requires common-drain topology.
Source	Reference node for gate control and current return	Low-inductance connection point for sense resistors and gate driver ground; defines local power ground in half-bridge leg.
Gate	Control input for channel modulation	High-impedance MOS gate requiring <2.0 Ω series resistance to damp ringing; sensitive to ESD (±20 V max rating).

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	5.1 V/ns - Reduces risk of false turn-on during high-speed commutation in synchronous rectifiers and H-bridges.
Fully characterized avalanche SOA	350 mJ single-pulse, 670 mJ thermally limited - Allows safe operation under unclamped inductive switching without external protection.
Low gate charge asymmetry	Q_gd/Q_gs ≈ 55/45 nC - Improves Miller immunity and enables predictable, fast turn-off even with moderate gate resistance.
Thermally rugged construction	R_θJC = 0.51 °C/W - Supports 290 W power dissipation at T_C = 25°C, reducing need for oversized heatsinks in industrial motor drives.
Lead-free, RoHS-compliant packaging	TO-220AB Pb-free finish - Meets global environmental compliance requirements without compromising solder joint reliability or thermal performance.

Applications

Brushed Motor Drive

BLDC Inverter Stage

Use Scenario: High-current H-bridge for cordless power tools operating from 36–48 V battery packs.

IC Role / Device Role / Timing Role: Main switching element in low-side and high-side legs, handling bidirectional current up to 183 A peak.

Use Value: Low 2.8 mΩ R_DS(on) minimizes I²R losses during stall conditions, extending runtime and reducing thermal stress on PCB traces.

Use Scenario: Six-step commutation stage in 1–3 kW e-bike or drone propulsion inverters.

IC Role / Device Role / Timing Role: High-current phase-leg switch with integrated body diode used for freewheeling during PWM off-time.

Use Value: 47 ns reverse recovery time and soft recovery behavior reduce voltage overshoot and EMI during diode commutation.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side switching in 48 V input telecom DC/DC modules (e.g., 48 V to 12 V, 100 A).

IC Role / Device Role / Timing Role: Active replacement for Schottky diode in forward or LLC converter secondary, driven synchronously with primary.

Use Value: 2.8 mΩ on-resistance cuts conduction loss by >60% vs. 40 V/100 A Schottky, improving efficiency from 92% to >95%.

Use Scenario: Redundant 48 V power supply backplane where two supplies feed a common load.

IC Role / Device Role / Timing Role: Unidirectional power path controller that blocks reverse current while passing forward current with minimal drop.

Use Value: V_SD = 1.2 V at 100 A enables <120 mW forward loss per device - lower than discrete ideal diode IC solutions at same current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N7F7	75 V, 220 A, R_DS(on) = 2.0 mΩ (typ.), D²PAK package, higher Q_g (320 nC)	Requires stronger gate driver; better suited for space-constrained PCBs needing surface-mount assembly	Select when board area is constrained and thermal interface allows D²PAK mounting; avoid if gate drive capability is limited to ≤2 A peak.
IXTH180N075	75 V, 180 A, R_DS(on) = 3.2 mΩ (max), TO-247 package, lower dv/dt rating (3.5 V/ns)	Larger footprint, higher R_DS(on), reduced noise immunity in fast-switching bridges	Prefer for legacy designs using TO-247 sockets or where lower cost outweighs marginal efficiency loss and reduced ruggedness.

Compared with STL220N7F7 and IXTH180N075, IRFB7734PBF offers optimal balance of low R_DS(on), proven avalanche ruggedness, and TO-220AB mechanical compatibility - making it preferred for new industrial motor drive and high-reliability OR-ing designs where gate drive headroom and thermal management are well-controlled.

Availability

IRFB7734PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverter stages, and synchronous rectifier circuits requiring stable component supply across production lifecycles.

Supply support for IRFB7734PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices since acquiring International Rectifier in 2015.

IRFB7734PBF belongs to the StrongIRFET™ family - engineered specifically for high-current, high-ruggedness switching in industrial motor control, UPS, and telecom power systems where reliability under transient stress is non-negotiable.

FAQ

What is the maximum allowable gate-to-source voltage for IRFB7734PBF?

The absolute maximum V_GS rating is ±20 V. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to +15 V / –5 V using Zener diodes or dedicated gate drivers with rail-to-rail compliance. The typical threshold voltage range is 2.1–3.7 V, so 10 V is the recommended nominal drive level for full enhancement.

Can IRFB7734PBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (normalized resistance increases with junction temperature) enables inherent current sharing. However, layout symmetry (matched gate and source inductance), individual gate resistors (≥1 Ω), and thermal coupling between devices are mandatory to prevent thermal runaway. Derate total current by 15% versus sum of individual ratings.

Is the TO-220AB package electrically isolated?

No - the metal tab is internally connected to the Drain terminal. Electrical isolation from the heatsink must be achieved using insulating hardware (e.g., silicone washer + nylon shoulder washer) and dielectric thermal compound. Failure to isolate will short the drain to chassis ground, causing immediate device failure and potential system damage.

What is the significance of the "PbF" suffix in IRFB7734PBF?

"PbF" denotes lead-free (Pb-free) and RoHS-compliant construction. The device uses matte tin plating on leads and Pb-free solder-compatible terminations, meeting EU Directive 2011/65/EU. No lead content is present in die attach, molding compound, or external finishes - verified per JEDEC J-STD-020 moisture sensitivity and IPC/JEDEC J-STD-033 handling standards.

IRFB7734PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 183A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 270 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10150 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 290W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB7734PBF FAQ

1.How can I place an order for IRFB7734PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB7734PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB7734PBF reliable?

The price and inventory of IRFB7734PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB7734PBF is usually 5 days.

3.What payment methods are accepted for IRFB7734PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB7734PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB7734PBF?

IRFB7734PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB7734PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB7734PBF?

For technical support, including IRFB7734PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB7734PBF requirements.

6.How does Aetrix verify that IRFB7734PBF is sourced from the original manufacturer or authorized distributors?

All IRFB7734PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB7734PBF meets industry standards.

7.What is the process for return or replacement of IRFB7734PBF?

All IRFB7734PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB7734PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB7734PBF part is unused and in its original packaging.

Return procedure for IRFB7734PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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