Vishay Siliconix IRFB9N30A

Overview

IRFB9N30A from Vishay Siliconix is a 300 V, 9.3 A N-channel power MOSFET in TO-220 package, featuring 0.45 Ω R_DS(on) at V_GS = 10 V, 33 nC total gate charge, and repetitive avalanche rating up to 9.3 A - designed for hard-switched SMPS, motor control, and DC-DC converter primary-side switching.

For engineers reviewing the IRFB9N30A datasheet, IRFB9N30A pinout, IRFB9N30A application, or IRFB9N30A equivalent, key selection criteria include its 300 V V_DS, 0.45 Ω on-resistance at 10 V drive, 9.3 A continuous drain current at T_C = 25 °C, avalanche ruggedness (E_AS = 160 mJ), and TO-220 thermal performance (R_thJC = 1.3 °C/W).

Technical Context

This third-generation planar VDMOS device uses silicon process optimization to balance low conduction loss and fast switching. Its 33 nC gate charge and 12 nC Q_gd support efficient hard-switching at moderate frequencies, while the integral body diode (t_rr = 280–420 ns, Q_rr = 1.5–2.3 µC) enables synchronous rectification-capable topologies.

The IRFB9N30A operates with ±30 V gate-source voltage tolerance and exhibits positive V_DS temperature coefficient (0.38 V/°C), supporting stable parallel operation. Its 1.3 °C/W junction-to-case thermal resistance and 96 W maximum power dissipation at T_C = 25 °C enable robust thermal management in convection-cooled industrial designs.

Key Specifications

Pinout & Package

IRFB9N30A is housed in a standard TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 1.3 °C/W) and mechanical compatibility with industry-standard heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP9NK30Z and IXTH9N30P, the IRFB9N30A offers optimal balance of gate drive simplicity (2.0–4.0 V V_GS(th)), moderate gate charge (33 nC), and TO-220 manufacturability - making it ideal for cost-sensitive, medium-power industrial power supplies where layout space and driver complexity are constrained.

Availability

IRFB9N30A is available at Aetrix Electronics and suitable for switch-mode power supplies, DC motor drives, uninterruptible power supplies, and industrial control systems requiring stable component supply and long-term production continuity.

Supply support for IRFB9N30A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The IRFB9N30A belongs to Vishay's third-generation power MOSFET family, engineered for high-voltage industrial switching applications demanding avalanche robustness, thermal efficiency, and ease of paralleling in convection-cooled enclosures.

FAQ

What is the maximum continuous drain current rating for the IRFB9N30A at 100 °C case temperature?

The IRFB9N30A supports 5.9 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 package and must be applied when heatsink temperature exceeds 25 °C. The linear derating factor is 0.77 W/°C beyond T_C = 25 °C.

Does the IRFB9N30A have a built-in body diode, and what are its key recovery characteristics?

Yes, the IRFB9N30A integrates a monolithic body diode with typical reverse recovery time (t_rr) of 280–420 ns and reverse recovery charge (Q_rr) of 1.5–2.3 µC at T_J = 25 °C. These values are measured under IF = 9.3 A, di/dt = 100 A/µs, and define switching loss contributions during commutation in bridge topologies.

Is the IRFB9N30A RoHS-compliant, and which variant meets this requirement?

The IRFB9N30APbF variant is RoHS-compliant per Directive 2011/65/EU, using lead-free terminations. The base part number IRFB9N30A carries SnPb terminations and is not RoHS-compliant unless exempted under Annex III. Always verify the suffix (PbF vs. blank) on order documentation and reels.

What is the gate threshold voltage range for the IRFB9N30A, and how does it affect drive circuit design?

The IRFB9N30A has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 µA. This wide range ensures reliable turn-on with 10 V gate drive while providing noise immunity in electrically noisy industrial environments - no level-shifting or specialized gate drivers are required for standard 12 V logic interfaces.

Can the IRFB9N30A be used in parallel configurations, and what design considerations apply?

Yes, the IRFB9N30A is explicitly designed for paralleling, supported by positive V_DS temperature coefficient (0.38 V/°C) and low gate charge variation. To ensure current sharing, use matched gate resistors (≤12 Ω), symmetrical PCB layout, individual source resistors for current sensing, and thermally coupled mounting to maintain uniform junction temperatures across devices.