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Vishay Siliconix IRFB9N30APBF
- Part No.:
- IRFB9N30APBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRFB9N30APBF.pdf
- Description:
- MOSFET N-CH 300V 9.3A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,423
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Product details
Overview
IRFB9N30APBF from Vishay Siliconix is a 300 V, 9.3 A N-channel enhancement-mode power MOSFET in TO-220 package, featuring 0.45 Ω RDS(on) at VGS = 10 V, 33 nC total gate charge, and repetitive avalanche rating-designed for hard-switched SMPS, motor drives, and DC-DC converters requiring ruggedness and fast switching.
For engineers reviewing the IRFB9N30APBF datasheet, IRFB9N30APBF pinout, IRFB9N30APBF application, or IRFB9N30APBF equivalent, key selection criteria include its 160 mJ single-pulse avalanche energy, 4.6 V/ns peak diode recovery dV/dt capability, TO-220 thermal resistance (RthJC = 1.3 °C/W), and RoHS-compliant lead-free termination.
Technical Context
This third-generation TrenchFET® MOSFET employs optimized cell layout and process to achieve low Qgd/Qg ratio (12/33 nC), supporting high-efficiency hard-switching operation. Its body diode exhibits 280–420 ns reverse recovery time (trr) and 1.5–2.3 µC Qrr under standardized 100 A/µs di/dt conditions.
The device is rated for continuous drain current up to 9.3 A at TC = 25 °C and derates linearly at 0.77 W/°C above 25 °C case temperature. It supports unclamped inductive switching with IAR = 9.3 A and EAR = 9.6 mJ under repetitive avalanche conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 300 V - Maximum blocking voltage before avalanche onset; enables use in 240 V AC rectified bus applications. |
| RDS(on) | 0.45 Ω @ VGS = 10 V - Determines conduction loss at 5.6 A ID; yields ~14.2 W max I²R loss at full rated current. |
| Qg | 33 nC - Total gate charge required for full turn-on; defines driver strength requirement and switching loss trade-off. |
| EAS | 160 mJ - Single-pulse avalanche energy handling capacity; critical for inductive load switching reliability. |
| RthJC | 1.3 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting with predictable thermal rise. |
| trr | 280–420 ns - Body diode reverse recovery time; impacts commutation losses and EMI in freewheeling paths. |
| VGS(th) | 2.0–4.0 V - Gate threshold voltage range; ensures reliable turn-on with standard 10 V gate drivers while avoiding false triggering. |
Pinout & Package
IRFB9N30APBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected). The package features low thermal resistance (RthJC = 1.3 °C/W), 10 lbf·in mounting torque rating, and RoHS-compliant matte tin (Sn) lead finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current-carrying terminal connected to MOSFET die substrate | Electrically and thermally coupled to metal tab; requires insulating washer if mounted to grounded heatsink. |
| Gate | Control electrode modulating channel conductivity | High-impedance input (IGSS ≤ ±100 nA); driven by 10 V logic-level signal for full enhancement. |
| Source | Reference node for gate drive and current return path | Common connection point for source resistor sensing and gate driver return; internal inductance LS = 7.5 nH affects switching waveform fidelity. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports 9.3 A IAR and 9.6 mJ EAR without degradation-enables robust operation in inductive switching circuits without snubbers. |
| Dynamic dv/dt rated | 4.6 V/ns peak diode recovery dV/dt tolerance-reduces risk of spurious turn-on during high-speed commutation. |
| Low Qgd/Qg ratio | 12/33 nC (36%)-improves Miller immunity and enables faster, more controllable turn-off in hard-switched topologies. |
| Fast switching performance | td(on) = 10 ns, tr = 25 ns, td(off) = 35 ns, tf = 29 ns @ VDD = 150 V, ID = 9.3 A-minimizes transition losses in high-frequency SMPS. |
| Lead (Pb)-free construction | RoHS-compliant matte tin plating on leads and tab-meets environmental compliance requirements without sacrificing solderability or thermal performance. |
Applications
| AC-DC Power Supplies | DC-DC Converters |
|---|---|
Use Scenario: Primary-side switch in 100–300 W offline flyback or forward converters with universal AC input. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via PWM duty cycle modulation. Use Value: 300 V VDS rating accommodates 375 V DC bus with margin; 0.45 Ω RDS(on) limits conduction loss at 9.3 A peak current. |
Use Scenario: Synchronous rectifier or high-side switch in isolated 12 V–48 V input telecom or industrial DC-DC modules. IC Role / Device Role / Timing Role: Low-loss power stage element operating at 100–500 kHz switching frequency. Use Value: 33 nC Qg enables efficient gate driving with standard 1-A peak drivers; TO-220 package simplifies thermal management. |
| Motor Control Drivers | Uninterruptible Power Systems |
Use Scenario: Half-bridge leg in 1–3 kW BLDC or stepper motor inverters for HVAC and industrial automation. IC Role / Device Role / Timing Role: Fast-switching power switch subjected to repetitive inductive stress and body diode conduction. Use Value: Repetitive avalanche rating (9.3 A IAR) and 280–420 ns trr ensure reliable freewheeling and fault tolerance during phase commutation. |
Use Scenario: Battery charger switch or inverter output stage in line-interactive UPS systems with 24–48 V battery banks. IC Role / Device Role / Timing Role: High-reliability power switch managing bidirectional energy flow and surge transients. Use Value: 160 mJ EAS and 4.6 V/ns dV/dt rating protect against line surges and battery reversal events without external clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP9NK30ZFP | 300 V, 9 A, RDS(on) = 0.45 Ω, but uses SuperMESH™ Zener-protected gate; Qg = 32 nC, trr = 350 ns. | Higher gate robustness against overvoltage; slightly slower body diode recovery than IRFB9N30APBF. | Preferred where gate transient immunity is prioritized over minimal trr. |
| IXTP9N30P | 300 V, 9 A, RDS(on) = 0.45 Ω, but TO-220FP (full-pack) variant; Qg = 30 nC, trr = 320 ns, RthJC = 1.5 °C/W. | Same electrical specs but higher thermal resistance; non-isolated tab requires insulated mounting. | Acceptable when isolation is not required and board space allows full-pack footprint. |
Compared with STP9NK30ZFP and IXTP9N30P, IRFB9N30APBF offers superior thermal performance (RthJC = 1.3 °C/W), tighter trr distribution (280–420 ns), and industry-standard isolated-tab TO-220AB mechanical compatibility-making it optimal for thermally constrained, high-reliability industrial power stages.
Availability
IRFB9N30APBF is available at Aetrix Electronics and suitable for AC-DC power supplies, motor control drivers, and uninterruptible power systems requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.
Supply support for IRFB9N30APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.
The IRFB9N30APBF belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for high-voltage switching applications demanding low conduction loss, fast switching, and repeatable avalanche capability in commercial and industrial environments.
FAQ
What is the maximum continuous drain current rating for IRFB9N30APBF at 100 °C case temperature?
The IRFB9N30APBF has a continuous drain current rating of 5.9 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 package and must be applied in thermal design calculations alongside RthJC = 1.3 °C/W and ambient conditions. The IRFB9N30APBF maintains safe operation only within this current limit at elevated case temperatures.
Does IRFB9N30APBF have a built-in gate protection diode?
No, the IRFB9N30APBF does not integrate a gate protection Zener diode. Its gate-source voltage rating is ±30 V, and gate-source leakage is specified at ±100 nA at ±30 V. External gate protection (e.g., 15 V Zener clamp) is recommended in noisy or high-dV/dt environments. This differs from alternatives like STP9NK30ZFP, which includes integrated gate Zener protection.
What is the typical body diode forward voltage of IRFB9N30APBF at 9.3 A and 25 °C junction temperature?
The typical body diode forward voltage (VSD) of IRFB9N30APBF is 1.5 V at IS = 9.3 A and TJ = 25 °C with VGS = 0 V, per the "Drain-Source Body Diode Characteristics" section. This value increases with temperature and current-designers should reference Fig. 7 in the datasheet for full VSD vs. ISD curves across operating conditions.
Can IRFB9N30APBF be paralleled with identical units for higher current handling?
Yes, IRFB9N30APBF is explicitly designed for ease of paralleling, as noted in its FEATURES list. Its positive RDS(on) temperature coefficient (shown in Fig. 4) promotes current sharing between paralleled devices. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling-verified in Vishay's application notes for multi-MOSFET configurations.
Is IRFB9N30APBF suitable for use in automotive applications?
The IRFB9N30APBF is not AEC-Q101 qualified and is intended for commercial and industrial applications only. While its absolute maximum ratings (e.g., TJ = –55 to +150 °C) meet some automotive temperature ranges, Vishay does not certify or characterize IRFB9N30APBF for automotive use. For automotive-grade equivalents, consult Vishay's AEC-Q101-qualified power MOSFET portfolio.
IRFB9N30APBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 300 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 450mOhm @ 5.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 920 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 96W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRFB9N30APBF FAQ
1.How can I place an order for IRFB9N30APBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFB9N30APBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFB9N30APBF reliable?
The price and inventory of IRFB9N30APBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB9N30APBF is usually 5 days.
3.What payment methods are accepted for IRFB9N30APBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB9N30APBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFB9N30APBF?
IRFB9N30APBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFB9N30APBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFB9N30APBF?
For technical support, including IRFB9N30APBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB9N30APBF requirements.
6.How does Aetrix verify that IRFB9N30APBF is sourced from the original manufacturer or authorized distributors?
All IRFB9N30APBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB9N30APBF meets industry standards.
7.What is the process for return or replacement of IRFB9N30APBF?
All IRFB9N30APBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB9N30APBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFB9N30APBF part is unused and in its original packaging.
Return procedure for IRFB9N30APBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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