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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFB9N60APBF

Name: IRFB9N60APBF
Brand: Vishay Siliconix
SKU: IRFB9N60APBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB9N60APBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB9N60APBF.pdf

Description:: MOSFET N-CH 600V 9.2A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB9N60APBF from Vishay Siliconix is a 600 V, 9.2 A N-channel power MOSFET in TO-220AB package, featuring 0.75 Ω R_DS(on) at V_GS = 10 V, 49 nC total gate charge, and 290 mJ single-pulse avalanche energy-designed for high-voltage switch-mode power supply main switches.

For engineers reviewing the IRFB9N60APBF datasheet, IRFB9N60APBF pinout, IRFB9N60APBF application, or IRFB9N60APBF equivalent, this page delivers verified electrical ratings, thermal resistance values (R_thJC = 0.75 °C/W), diode recovery characteristics (t_rr = 530–800 ns), and TO-220AB terminal mapping to support layout, thermal design, and ruggedness validation.

Technical Context

This MOSFET employs planar vertical DMOS technology with fully characterized avalanche capability and dynamic dV/dt ruggedness up to 5.0 V/ns. Its gate threshold voltage (2.0–4.0 V) and low Q_gd/Q_g ratio (20/49 nC) support stable hard-switching operation in offline topologies.

The device integrates an intrinsic body diode with 1.5 V forward drop at 9.2 A and 3.0–4.4 μC reverse recovery charge-critical for evaluating commutation losses in active-clamped forward converters and UPS inverters where unclamped inductive switching occurs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 480 V DC bus designs with 25 % margin for surge and ringing
R_DS(on)	0.75 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 5.5 A continuous drain current
Q_g	49 nC - determines gate driver power requirement and switching speed in 100–500 kHz SMPS
E_AS	290 mJ - specifies maximum unclamped inductive energy the device withstands without failure
t_rr	530–800 ns - defines diode recovery window affecting cross-conduction risk in bridge circuits
R_thJC	0.75 °C/W - allows direct heatsink thermal path calculation for 170 W P_D at T_C = 25 °C
I_D (T_C = 100 °C)	5.8 A - sets practical continuous current limit under industrial ambient conditions

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, and 1.1 N·m screw torque rating. Tab is electrically connected to drain for low-inductance heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V drive for full enhancement; ±30 V absolute max rating prevents gate oxide damage
D (Drain)	Main power output terminal	Connected to heatsink tab; carries full load current and absorbs avalanche energy
S (Source)	Power return and reference node	Serves as local ground for gate drive loop; critical for minimizing common-source inductance

Key Features

Feature	Design Value
Low Q_g (49 nC)	Reduces gate driver IC power dissipation and simplifies drive circuit design for high-frequency SMPS
Fully characterized C_oss eff. (96 pF)	Enables accurate snubber sizing and ZVS transition analysis in resonant converters
Avalanche-rated (E_AS = 290 mJ)	Eliminates need for external clamping in flyback or forward converter primary switches
Improved dV/dt ruggedness (5.0 V/ns)	Prevents false turn-on during high dv/dt transients in high-side configurations
Body diode t_rr and Q_rr specified	Supports reliable synchronous rectification evaluation and loss modeling in LLC topologies

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: Main switch in 300–500 W offline forward converter with active clamp. IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC input, switching at 100–200 kHz. Use Value: 290 mJ E_AS withstands leakage inductance spikes without external snubber, reducing BOM count.	Use Scenario: Inverter stage DC–AC conversion in line-interactive UPS with battery backup. IC Role / Device Role / Timing Role: Half-bridge high-side switch operating with 120–150 V bus and 50/60 Hz fundamental output. Use Value: 5.0 V/ns dV/dt ruggedness prevents spurious turn-on during bus transitions, improving system reliability.
High-Speed Power Switching	Industrial Motor Drive Front-End
Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Fast-turning AC/DC load switch controlling 24–48 V DC solenoids and indicators. Use Value: 13 ns turn-on delay and 22 ns fall time enable sub-microsecond response for safety-critical actuation.	Use Scenario: Input rectifier and PFC boost switch in 3-phase industrial motor drive power stage. IC Role / Device Role / Timing Role: 600 V-rated switch handling 480 V AC line-derived DC bus with 10–20 kHz switching. Use Value: 0.75 Ω R_DS(on) limits conduction loss to <2 W at 5.8 A continuous, supporting compact heatsink design.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: Main switch in 300–500 W offline forward converter with active clamp.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC input, switching at 100–200 kHz.

Use Value: 290 mJ E_AS withstands leakage inductance spikes without external snubber, reducing BOM count.

Use Scenario: Inverter stage DC–AC conversion in line-interactive UPS with battery backup.

IC Role / Device Role / Timing Role: Half-bridge high-side switch operating with 120–150 V bus and 50/60 Hz fundamental output.

Use Value: 5.0 V/ns dV/dt ruggedness prevents spurious turn-on during bus transitions, improving system reliability.

High-Speed Power Switching

Industrial Motor Drive Front-End

Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Fast-turning AC/DC load switch controlling 24–48 V DC solenoids and indicators.

Use Value: 13 ns turn-on delay and 22 ns fall time enable sub-microsecond response for safety-critical actuation.

Use Scenario: Input rectifier and PFC boost switch in 3-phase industrial motor drive power stage.

IC Role / Device Role / Timing Role: 600 V-rated switch handling 480 V AC line-derived DC bus with 10–20 kHz switching.

Use Value: 0.75 Ω R_DS(on) limits conduction loss to <2 W at 5.8 A continuous, supporting compact heatsink design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK60ZFP	600 V, 8.5 A, R_DS(on) = 0.75 Ω, but uses SuperMESH™ with higher C_iss (1700 pF vs. 1400 pF)	Higher input capacitance increases gate drive loss; lower I_D rating reduces margin in 100 °C environments	Prefer IRFB9N60APBF when gate drive simplicity and thermal headroom are prioritized over cost
IXTH9N60L2	600 V, 9 A, R_DS(on) = 0.75 Ω, but optimized for linear mode with enhanced SOA and no avalanche rating	Lacks E_AS specification; unsuitable for unclamped inductive loads like flyback transformers	Select IRFB9N60APBF for applications requiring guaranteed avalanche robustness in SMPS primary side

Compared with STP9NK60ZFP and IXTH9N60L2, the IRFB9N60APBF offers superior avalanche energy rating (290 mJ), tighter V_GS(th) range (2.0–4.0 V), and lower Q_gd/Q_g ratio-making it more suitable for rugged, high-reliability offline power conversion where transient stress is expected.

Availability

IRFB9N60APBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and high-speed industrial switching applications requiring stable component supply and long-term lifecycle support.

Supply support for IRFB9N60APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and application-specific characterization.

The IRFB9N60APBF belongs to Vishay's high-voltage power MOSFET product line, engineered for demanding offline power conversion where avalanche capability, dV/dt immunity, and precise dynamic parameter definition are essential.

FAQ

What is the maximum continuous drain current for IRFB9N60APBF at 100 °C case temperature?

The IRFB9N60APBF supports 5.8 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within its 0.75 °C/W junction-to-case thermal resistance. The IRFB9N60APBF must be mounted to an adequately sized heatsink to maintain case temperature below 100 °C under sustained load.

Does IRFB9N60APBF have avalanche capability, and how is it rated?

Yes, the IRFB9N60APBF is fully rated for repetitive and single-pulse avalanche operation. It delivers 290 mJ single-pulse avalanche energy (E_AS) and 17 mJ repetitive avalanche energy (E_AR) under defined test conditions (L = 6.8 mH, R_g = 25 Ω, I_AS = 9.2 A). These values are measured and guaranteed per Vishay's S21-0867-Rev. E datasheet, confirming ruggedness for unclamped inductive switching in SMPS main switches.

What is the gate threshold voltage range for IRFB9N60APBF, and why does it matter?

The IRFB9N60APBF has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This tight range ensures consistent turn-on behavior across production lots and simplifies gate drive design-especially important in high-noise industrial environments. A well-defined V_GS(th) minimizes risk of partial enhancement and associated thermal runaway, making the IRFB9N60APBF suitable for mission-critical power systems.

How does the body diode performance of IRFB9N60APBF compare to standard rectifiers?

The IRFB9N60APBF body diode exhibits V_SD = 1.5 V at I_S = 9.2 A and T_J = 25 °C, with reverse recovery time t_rr = 530–800 ns and Q_rr = 3.0–4.4 μC. While not optimized as a dedicated freewheeling diode, its characterized recovery parameters allow accurate loss modeling in synchronous or quasi-resonant topologies. Unlike generic rectifiers, the IRFB9N60APBF body diode performance is fully specified and tested per JEDEC standards.

Is IRFB9N60APBF lead-free and RoHS-compliant?

Yes, IRFB9N60APBF is lead (Pb)-free and complies with RoHS Directive 2011/65/EU. The "PbF" suffix explicitly denotes lead-free termination, and the part meets Vishay's material categorization requirements per document 99912. It is also halogen-free when ordered as IRFB9N60APbF-BE3, satisfying IPC-4101D/126 and JEDEC JS709B standards for green electronics manufacturing.

IRFB9N60APBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB9N60APBF FAQ

1.How can I place an order for IRFB9N60APBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB9N60APBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB9N60APBF reliable?

The price and inventory of IRFB9N60APBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB9N60APBF is usually 5 days.

3.What payment methods are accepted for IRFB9N60APBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB9N60APBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB9N60APBF?

IRFB9N60APBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB9N60APBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB9N60APBF?

For technical support, including IRFB9N60APBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB9N60APBF requirements.

6.How does Aetrix verify that IRFB9N60APBF is sourced from the original manufacturer or authorized distributors?

All IRFB9N60APBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB9N60APBF meets industry standards.

7.What is the process for return or replacement of IRFB9N60APBF?

All IRFB9N60APBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB9N60APBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB9N60APBF part is unused and in its original packaging.

Return procedure for IRFB9N60APBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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