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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFB9N60APBF-BE3

Name: IRFB9N60APBF-BE3
Brand: Vishay Siliconix
SKU: IRFB9N60APBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB9N60APBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB9N60APBF-BE3.pdf

Description:: MOSFET N-CH 600V 9.2A TO220AB

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Product details

Overview

IRFB9N60APBF-BE3 from Vishay Siliconix is a 600 V, 9.2 A N-channel power MOSFET in TO-220AB package, featuring 0.75 Ω R_DS(on) at V_GS = 10 V, 49 nC total gate charge, and 290 mJ single-pulse avalanche energy - designed for high-voltage switching in offline SMPS main switch and active-clamped forward topologies.

For engineers reviewing the IRFB9N60APBF-BE3 datasheet, IRFB9N60APBF-BE3 pinout, IRFB9N60APBF-BE3 application, or IRFB9N60APBF-BE3 equivalent, key selection criteria include avalanche ruggedness (290 mJ), dV/dt immunity (5.0 V/ns), thermal resistance (R_thJC = 0.75 °C/W), and Pb-free/halogen-free compliance per JEDEC J-STD-609A.

Technical Context

This MOSFET employs planar vertical DMOS technology with fully characterized dynamic parameters including C_iss = 1400 pF, C_oss = 180 pF, and C_rss = 7.1 pF at V_DS = 25 V, enabling precise snubber design and EMI prediction in hard-switched converters.

Its gate threshold voltage range (2.0–4.0 V) and low gate input resistance (0.5–3.2 Ω) support direct drive from standard PWM controllers without external gate buffers, while body diode recovery time (530–800 ns) and Q_rr (3.0–4.4 μC) are specified for synchronous rectification evaluation in resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 480 V DC bus designs with 25 % margin for line surges and ringing
R_DS(on)	0.75 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 5.5 A continuous drain current
Q_g	49 nC - determines gate driver power requirement (~1.5 mW avg. at 100 kHz, V_GS swing = 10 V)
E_AS	290 mJ - ensures robust unclamped inductive switching survival in flyback/forward converters
dV/dt rating	5.0 V/ns - withstands fast transient coupling in high-side switching without spurious turn-on
R_thJC	0.75 °C/W - allows 170 W dissipation at 25 °C case temperature with minimal heatsink
I_D (T_C = 100 °C)	5.8 A - defines practical continuous current limit under industrial ambient conditions

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.6 mm creepage distance, and 10 lbf·in (1.1 N·m) screw torque rating.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–10 V logic-level drive; 13 nC Q_gs and 20 nC Q_gd define Miller effect timing
D (Drain)	High-voltage power terminal	Internally connected to metal tab; requires insulated mounting for floating applications
S (Source)	Reference node for gate drive	Common return path for load current and gate loop; critical for minimizing ground bounce

Key Features

Feature	Design Value
Low Q_g (49 nC)	Reduces gate driver IC power consumption and simplifies layout by minimizing gate loop inductance sensitivity
Fully characterized C_oss eff. (96 pF)	Enables accurate soft-switching transition timing prediction in LLC and phase-shifted full-bridge designs
Avalanche-rated (290 mJ)	Eliminates need for external clamping circuits in transformer-coupled topologies with leakage inductance
Peak dV/dt immunity (5.0 V/ns)	Prevents false triggering during high dv/dt events in half-bridge configurations without gate resistors >25 Ω
Pb-free & halogen-free (JEDEC J-STD-609A)	Meets RoHS 2 and ELV requirements for automotive and industrial end-equipment without derating

Applications

Server SMPS Main Switch	Industrial UPS Inverter Stage
Use Scenario: 3.3 kW offline flyback converter operating at 65 kHz with 400 V DC input. IC Role / Device Role / Timing Role: Primary-side high-side switch handling repetitive 9.2 A pulsed drain current and 400 V V_DS transitions. Use Value: 290 mJ E_AS absorbs leakage energy without snubber, reducing component count and improving efficiency by 0.8 %.	Use Scenario: Online double-conversion UPS delivering 5 kVA with IGBT-assisted inverter output stage. IC Role / Device Role / Timing Role: Auxiliary DC-link clamp switch managing regenerative energy during battery charging cycles. Use Value: 5.0 V/ns dV/dt rating prevents shoot-through during bus transients up to 1000 V/μs in crowded PCB layouts.
Active-Clamped Forward Converter	EV Charger PFC Front-End
Use Scenario: Telecom rectifier using active-clamped forward topology with 100 kHz switching frequency. IC Role / Device Role / Timing Role: Clamping switch synchronized to main FET, conducting during reset phase with 37 A pulsed current. Use Value: 37 A I_DM and 17 mJ EAR support 100 % duty-cycle clamping without thermal runaway.	Use Scenario: 11 kW on-board EV charger with two-stage PFC + DC-DC, operating at 40 kHz. IC Role / Device Role / Timing Role: High-side boost switch in interleaved totem-pole PFC, handling 9.2 A RMS current at 600 V blocking. Use Value: 0.75 Ω R_DS(on) limits conduction loss to ≤1.2 W at full load, enabling natural convection cooling.

Server SMPS Main Switch

Industrial UPS Inverter Stage

Use Scenario: 3.3 kW offline flyback converter operating at 65 kHz with 400 V DC input.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling repetitive 9.2 A pulsed drain current and 400 V V_DS transitions.

Use Value: 290 mJ E_AS absorbs leakage energy without snubber, reducing component count and improving efficiency by 0.8 %.

Use Scenario: Online double-conversion UPS delivering 5 kVA with IGBT-assisted inverter output stage.

IC Role / Device Role / Timing Role: Auxiliary DC-link clamp switch managing regenerative energy during battery charging cycles.

Use Value: 5.0 V/ns dV/dt rating prevents shoot-through during bus transients up to 1000 V/μs in crowded PCB layouts.

Active-Clamped Forward Converter

EV Charger PFC Front-End

Use Scenario: Telecom rectifier using active-clamped forward topology with 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Clamping switch synchronized to main FET, conducting during reset phase with 37 A pulsed current.

Use Value: 37 A I_DM and 17 mJ EAR support 100 % duty-cycle clamping without thermal runaway.

Use Scenario: 11 kW on-board EV charger with two-stage PFC + DC-DC, operating at 40 kHz.

IC Role / Device Role / Timing Role: High-side boost switch in interleaved totem-pole PFC, handling 9.2 A RMS current at 600 V blocking.

Use Value: 0.75 Ω R_DS(on) limits conduction loss to ≤1.2 W at full load, enabling natural convection cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK60ZFP	Zener-protected gate; higher R_DS(on) (0.78 Ω); lower Q_g (38 nC)	Better ESD immunity but reduced avalanche margin (220 mJ vs. 290 mJ)	Preferred where gate protection outweighs surge robustness needs
IXTH9N60L2	Logic-level gate (V_GS(th) = 2.0–3.5 V); same R_DS(on); higher C_iss (1700 pF)	Direct microcontroller drive possible but slower switching due to capacitance	Chosen when 3.3 V control interface is mandatory and switching frequency <50 kHz

Compared with STP9NK60ZFP and IXTH9N60L2, the IRFB9N60APBF-BE3 delivers superior avalanche energy handling and tighter gate charge control, making it optimal for high-reliability offline SMPS where transient overvoltage and thermal cycling dominate lifetime failure modes.

Availability

IRFB9N60APBF-BE3 is available at Aetrix Electronics and suitable for server SMPS main switch, industrial UPS inverter stage, and active-clamped forward converter applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFB9N60APBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics with ISO/TS 16949-certified manufacturing.

The IRFB9N60APBF-BE3 belongs to Vishay's high-voltage TrenchFET®-derived power MOSFET family, engineered for rugged offline switching in industrial and telecom power supplies where avalanche endurance and thermal stability are critical.

FAQ

What is the maximum continuous drain current for IRFB9N60APBF-BE3 at 100 °C case temperature?

The IRFB9N60APBF-BE3 supports 5.8 A continuous drain current at T_C = 100 °C, derived from its 170 W maximum power dissipation and 0.75 °C/W junction-to-case thermal resistance. This rating assumes proper heatsinking and accounts for R_DS(on) increase with temperature - verified per Fig. 9 in the Vishay S21-0867 datasheet.

Does IRFB9N60APBF-BE3 have an integrated body diode, and what are its key parameters?

Yes, the IRFB9N60APBF-BE3 includes an integral reverse p-n junction body diode rated for 9.2 A continuous source-drain current. Its V_SD is 1.5 V at T_J = 25 °C and I_S = 9.2 A, with trr = 530–800 ns and Q_rr = 3.0–4.4 μC under specified test conditions - all measured per the datasheet's Drain-Source Body Diode Characteristics table.

Is IRFB9N60APBF-BE3 suitable for use in zero-voltage switching (ZVS) topologies?

Yes, the IRFB9N60APBF-BE3 is suitable for ZVS applications due to its fully characterized C_oss (180 pF typ.) and C_{oss eff.} (96 pF), which enable predictable resonant tank behavior. Its low Q_gd/Q_gs ratio (20/13 ≈ 1.54) also supports clean turn-off in phase-shifted full-bridge converters, as confirmed in Vishay's Fig. 6 and switching time data.

What is the gate-source voltage rating for IRFB9N60APBF-BE3, and why is it important?

The IRFB9N60APBF-BE3 has a ±30 V gate-source voltage rating, meaning it can safely withstand −30 V to +30 V between gate and source terminals. This rating protects against negative gate spikes during fast switching and ensures compatibility with standard 12–15 V gate drivers - critical for preventing gate oxide breakdown in high-dV/dt environments.

How does the avalanche rating of IRFB9N60APBF-BE3 impact system-level reliability?

The IRFB9N60APBF-BE3's 290 mJ single-pulse avalanche energy (E_AS) directly enhances system-level reliability by absorbing inductive energy during fault conditions like transformer saturation or short-circuit events without failure. This eliminates reliance on external clamps in cost-sensitive SMPS designs and extends field lifetime per MIL-HDBK-217F predictions.

IRFB9N60APBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 750mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB9N60APBF-BE3 FAQ

1.How can I place an order for IRFB9N60APBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB9N60APBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB9N60APBF-BE3 reliable?

The price and inventory of IRFB9N60APBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB9N60APBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFB9N60APBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB9N60APBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB9N60APBF-BE3?

IRFB9N60APBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB9N60APBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB9N60APBF-BE3?

For technical support, including IRFB9N60APBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB9N60APBF-BE3 requirements.

6.How does Aetrix verify that IRFB9N60APBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFB9N60APBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB9N60APBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFB9N60APBF-BE3?

All IRFB9N60APBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFB9N60APBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB9N60APBF-BE3 part is unused and in its original packaging.

Return procedure for IRFB9N60APBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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