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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFB9N65A

Name: IRFB9N65A
Brand: Vishay Siliconix
SKU: IRFB9N65A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB9N65A

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB9N65A.pdf

Description:: MOSFET N-CH 650V 8.5A TO220AB

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Product details

Overview

IRFB9N65A from Vishay Siliconix is a 650 V, 8.5 A (T_C = 25 °C), N-channel power MOSFET in TO-220AB package with R_DS(on) = 0.93 Ω at V_GS = 10 V and total gate charge Q_g = 48 nC - designed for high-voltage, medium-current switching in flyback and forward SMPS topologies.

For engineers reviewing the IRFB9N65A datasheet, IRFB9N65A pinout, IRFB9N65A application, or IRFB9N65A equivalent, key selection considerations include its 325 mJ unclamped avalanche energy rating, 2.8 V/ns peak diode recovery dV/dt capability, and validated performance in 520 V DC bus environments with TJ ≤ 150 °C operation.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for ruggedness in repetitive avalanche and fast dV/dt conditions. Its gate structure supports stable turn-on/turn-off with low Q_gd/Q_g ratio (19/48 = 39.6%), reducing Miller-induced shoot-through risk in hard-switched converters.

The device integrates a body diode with t_rr = 493–739 ns and Q_rr = 2.1–3.2 μC at I_F = 5.2 A, enabling reliable freewheeling in single-transistor forward converters without external snubbing under specified dI/dt ≤ 90 A/μs conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 520 V DC bus designs with 25 % voltage margin for transient spikes in industrial SMPS.
R_DS(on)	0.93 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 5.1 A continuous drain current (T_C = 25 °C).
Q_g	48 nC - determines gate driver power requirement; compatible with standard 1-A peak drivers at ≤100 kHz switching.
E_AS	325 mJ - allows safe operation during unclamped inductive switching events up to I_AS = 5.2 A with L = 24 mH.
t_r/t_f	20 ns / 18 ns - enables efficient hard-switching in 100–200 kHz SMPS with minimal overlap loss.
T_J Range	−55 °C to +150 °C - qualified for extended temperature operation in UPS and telecom rectifier modules.

Pinout & Package

IRFB9N65A uses the industry-standard TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, and thermal resistance R_thJC = 0.75 °C/W for heatsink interface.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; requires <48 nC charge for full enhancement; gate leakage <±100 nA at ±30 V.
D (Drain)	High-side power output	Connected to TO-220 tab; rated for 650 V blocking; carries main load current and avalanche energy path.
S (Source)	Power return reference	Common node for gate drive return and current sensing; body diode anode; tied to system ground in low-side switch configuration.

Key Features

Feature	Design Value
Low Q_g / Q_gd ratio	48 nC total gate charge with only 19 nC Miller charge - reduces susceptibility to false turn-on during high dV/dt transitions.
Characterized avalanche ruggedness	325 mJ single-pulse and 16 mJ repetitive avalanche energy - enables robust operation in inductive load switching without external clamping.
Controlled body diode recovery	Q_rr = 2.1–3.2 μC and t_rr = 493–739 ns - minimizes reverse recovery losses in forward converter freewheeling paths.
Thermal stability	R_DS(on) exhibits positive temperature coefficient; normalized on-resistance increases only ~2.5× from 25 °C to 150 °C - supports current sharing in parallel configurations.

Applications

Server PSU Flyback Converter	Industrial UPS Inverter Stage
Use Scenario: Primary-side switch in 500 W server auxiliary power supply using single-transistor flyback topology with 375–400 V DC input. IC Role / Device Role / Timing Role: High-voltage power switch operating at 65–100 kHz with ZVS-assisted turn-on and unclamped inductive turn-off. Use Value: 650 V rating provides headroom above 400 V nominal bus; 325 mJ E_AS absorbs leakage inductance energy without snubber.	Use Scenario: DC-AC inverter half-bridge switch in 3 kVA online UPS handling battery backup and grid-synchronized output. IC Role / Device Role / Timing Role: Medium-power switching element in hard-switched H-bridge with bidirectional body diode conduction during dead-time. Use Value: Body diode t_rr < 740 ns and dV/dt capability of 2.8 V/ns ensure clean commutation and prevent cross-conduction in 10 kHz PWM.
Telecom Rectifier Module	EV Charger Auxiliary Supply
Use Scenario: Primary switch in 1 kW telecom rectifier PFC+LLC stage with 380–400 V DC link and 150 kHz resonant frequency. IC Role / Device Role / Timing Role: High-efficiency switching device in LLC primary side where low Q_g reduces gate drive loss and improves light-load efficiency. Use Value: 48 nC Q_g enables use of low-cost integrated gate drivers; R_DS(on) = 0.93 Ω limits conduction loss to <2.5 W at 5 A RMS.	Use Scenario: Isolated auxiliary power supply switch in 22 kW EV on-board charger, powering control circuitry from 400 V battery rail. IC Role / Device Role / Timing Role: Flyback primary switch operating at 100 kHz with 520 V reflected output voltage and 150 °C junction temperature limit. Use Value: 150 °C max T_J and R_thJC = 0.75 °C/W support compact heatsinking; RoHS-compliant Pb-free terminations meet automotive qualification requirements.

Server PSU Flyback Converter

Industrial UPS Inverter Stage

Use Scenario: Primary-side switch in 500 W server auxiliary power supply using single-transistor flyback topology with 375–400 V DC input.

IC Role / Device Role / Timing Role: High-voltage power switch operating at 65–100 kHz with ZVS-assisted turn-on and unclamped inductive turn-off.

Use Value: 650 V rating provides headroom above 400 V nominal bus; 325 mJ E_AS absorbs leakage inductance energy without snubber.

Use Scenario: DC-AC inverter half-bridge switch in 3 kVA online UPS handling battery backup and grid-synchronized output.

IC Role / Device Role / Timing Role: Medium-power switching element in hard-switched H-bridge with bidirectional body diode conduction during dead-time.

Use Value: Body diode t_rr < 740 ns and dV/dt capability of 2.8 V/ns ensure clean commutation and prevent cross-conduction in 10 kHz PWM.

Telecom Rectifier Module

EV Charger Auxiliary Supply

Use Scenario: Primary switch in 1 kW telecom rectifier PFC+LLC stage with 380–400 V DC link and 150 kHz resonant frequency.

IC Role / Device Role / Timing Role: High-efficiency switching device in LLC primary side where low Q_g reduces gate drive loss and improves light-load efficiency.

Use Value: 48 nC Q_g enables use of low-cost integrated gate drivers; R_DS(on) = 0.93 Ω limits conduction loss to <2.5 W at 5 A RMS.

Use Scenario: Isolated auxiliary power supply switch in 22 kW EV on-board charger, powering control circuitry from 400 V battery rail.

IC Role / Device Role / Timing Role: Flyback primary switch operating at 100 kHz with 520 V reflected output voltage and 150 °C junction temperature limit.

Use Value: 150 °C max T_J and R_thJC = 0.75 °C/W support compact heatsinking; RoHS-compliant Pb-free terminations meet automotive qualification requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK65ZFP	650 V, 8.5 A, R_DS(on) = 0.95 Ω, Q_g = 42 nC, SuperMESH™ Zener-protected gate	Lower Q_g reduces gate loss but lacks published E_AS rating; lower dV/dt ruggedness (2.0 V/ns)	Preferable where gate drive loss dominates and avalanche stress is minimal; not recommended for unclamped inductive loads.
IXTH9N65X2	650 V, 9 A, R_DS(on) = 0.85 Ω, Q_g = 52 nC, HiPerFET™ Gen. 2 with enhanced dv/dt immunity	Higher current rating and better dV/dt immunity (4.0 V/ns), but larger die size increases cost and capacitance	Better suited for higher-power forward converters requiring >5.4 A continuous current at T_C = 100 °C.

Compared with STP9NK65ZFP and IXTH9N65X2, the IRFB9N65A offers balanced trade-offs: superior avalanche energy (325 mJ vs. unspecified / 220 mJ), moderate Q_g, and proven reliability in TO-220AB-based SMPS designs - making it optimal for cost-sensitive, medium-power industrial flyback and forward converters.

Availability

IRFB9N65A is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed power switching applications requiring stable component supply across multi-year production cycles.

Supply support for IRFB9N65A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, computing, and telecom infrastructure.

The IRFB9N65A belongs to Vishay's high-voltage power MOSFET product line engineered for rugged, high-efficiency switching in offline AC-DC converters and UPS systems operating up to 650 V.

FAQ

What is the maximum continuous drain current rating for IRFB9N65A at 100 °C case temperature?

The IRFB9N65A has a continuous drain current rating of 5.4 A at T_C = 100 °C, derated linearly from 8.5 A at 25 °C using a 1.3 W/°C factor. This value reflects thermal limitations of the TO-220AB package and must be verified against actual heatsink performance and ambient conditions in the final design. The IRFB9N65A datasheet specifies this limit in the Absolute Maximum Ratings table under "Continuous drain current".

Does IRFB9N65A support logic-level gate drive?

No, the IRFB9N65A is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, and it is fully enhanced at V_GS = 10 V with R_DS(on) = 0.93 Ω. Driving the IRFB9N65A with only 5 V may result in incomplete turn-on and excessive conduction loss. A 10 V gate drive is required for specified performance.

What is the body diode reverse recovery charge (Q_rr) of IRFB9N65A and why does it matter?

The IRFB9N65A body diode has Q_rr = 2.1–3.2 μC at T_J = 25 °C, I_F = 5.2 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss and EMI in topologies where the body diode conducts (e.g., forward converters). Lower Q_rr reduces reverse recovery current spikes and associated losses - a key advantage of the IRFB9N65A over older 650 V MOSFETs.

Can IRFB9N65A be used in parallel configurations?

Yes, the IRFB9N65A supports parallel operation due to its positive R_DS(on) temperature coefficient - resistance increases with junction temperature, promoting current sharing. However, matched gate drive layout, source inductance balancing, and individual gate resistors are required. The IRFB9N65A datasheet confirms this behavior in Fig. 4 (Normalized On-Resistance vs. Temperature).

Is IRFB9N65A RoHS-compliant and halogen-free?

The ordering variant IRFB9N65APbF-BE3 is both lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and JEDEC JS709B requirements. Standard IRFB9N65APbF is Pb-free but not halogen-free. Always verify compliance status using the full part number - IRFB9N65A itself is not a compliant designation; only the suffix-defined variants carry compliance attributes.

IRFB9N65A Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 8.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 930mOhm @ 5.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1417 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB9N65A FAQ

1.How can I place an order for IRFB9N65A through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB9N65A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB9N65A reliable?

The price and inventory of IRFB9N65A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB9N65A is usually 5 days.

3.What payment methods are accepted for IRFB9N65A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB9N65A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB9N65A?

IRFB9N65A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB9N65A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB9N65A?

For technical support, including IRFB9N65A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB9N65A requirements.

6.How does Aetrix verify that IRFB9N65A is sourced from the original manufacturer or authorized distributors?

All IRFB9N65A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB9N65A meets industry standards.

7.What is the process for return or replacement of IRFB9N65A?

All IRFB9N65A units undergo pre-shipment inspection (PSI). If there is an issue with IRFB9N65A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB9N65A part is unused and in its original packaging.

Return procedure for IRFB9N65A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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