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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFB9N65APBF

Name: IRFB9N65APBF
Brand: Vishay Siliconix
SKU: IRFB9N65APBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB9N65APBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB9N65APBF.pdf

Description:: MOSFET N-CH 650V 8.5A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB9N65APBF from Vishay Siliconix is a 650 V, 8.5 A N-channel power MOSFET in TO-220AB package, featuring 0.93 Ω R_DS(on) at V_GS = 10 V, 48 nC total gate charge, and 325 mJ single-pulse avalanche energy-designed for high-voltage SMPS topologies including flyback and forward converters.

For engineers reviewing the IRFB9N65APBF datasheet, IRFB9N65APBF pinout, IRFB9N65APBF application, or IRFB9N65APBF equivalent, key selection criteria include its 650 V blocking rating, low Q_g/Q_gd ratio for fast switching with reduced Miller effect, rugged body diode (t_rr = 493–739 ns), and validated unclamped inductive switching performance up to 5.2 A.

Technical Context

This device employs planar stripe silicon technology optimized for high-voltage hard-switching operation. Its gate threshold voltage (2.0–4.0 V) ensures compatibility with standard 10 V gate drivers, while the 0.75 °C/W junction-to-case thermal resistance supports high-power dissipation in convection-cooled TO-220AB mounting.

The MOSFET integrates a fully characterized intrinsic body diode with specified reverse recovery charge (Q_rr = 2.1–3.2 μC) and peak diode recovery dV/dt rating of 2.8 V/ns-critical for minimizing voltage overshoot in discontinuous conduction mode (DCM) flyback designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports primary-side switching in 400 V DC bus SMPS and universal-input offline converters
R_DS(on)	0.93 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 5.2 A continuous drain current
Q_g	48 nC - determines gate drive power requirement; compatible with common 1 A peak gate drivers
E_AS	325 mJ - validates robustness against unclamped inductive energy during startup/fault conditions
t_rr	493–739 ns - defines body diode recovery window affecting snubber design and EMI in DCM operation
R_thJC	0.75 °C/W - allows ~125 W power dissipation at ΔT = 94 °C case-to-junction rise under heatsinked conditions
I_D (T_C = 100 °C)	5.4 A - sets practical continuous current limit in thermally constrained industrial enclosures

Pinout & Package

IRFB9N65APBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), rated for 167 W maximum power dissipation at T_C = 25 °C and 10 lbf·in mounting torque.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal; 12 nC Q_gs defines turn-on timing and driver sizing
D (Drain)	High-side power terminal	Connected to TO-220 tab; electrically isolated but thermally coupled-requires insulating washer if mounted to grounded heatsink
S (Source)	Reference node / return path	Common connection point for gate driver return, current sense resistor, and controller ground-must minimize parasitic inductance

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio (48/19)	Reduces Miller plateau duration and improves immunity to false turn-on during high dV/dt commutation
Characterized C_{oss eff.} (84 pF)	Enables accurate soft-switching timing prediction in resonant LLC or active clamp flyback designs
Specified avalanche current I_AR (5.2 A)	Confirms repeatable energy handling capability without derating in overcurrent-limited UPS inverters
RoHS-compliant Pb-free terminations	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for standard SMT reflow compatibility in hybrid assemblies
150 °C max junction temperature	Supports operation in sealed industrial enclosures with ambient up to 85 °C and forced-air cooling

Applications

Server SMPS Primary Switch	Industrial UPS Inverter Stage
Use Scenario: 1 kW telecom rectifier operating from 90–264 VAC input with active PFC front-end and LLC resonant secondary. IC Role / Device Role / Timing Role: High-side main switch in asymmetric half-bridge topology, switching at 100–300 kHz with ZVS-assisted turn-on. Use Value: 650 V rating accommodates reflected transients from 400 V DC bus; 325 mJ E_AS prevents failure during output short-circuit recovery.	Use Scenario: Online double-conversion UPS delivering clean 230 VAC output during grid outage, with battery-fed DC link. IC Role / Device Role / Timing Role: Low-side switch in full-bridge inverter stage, conducting 5.2 A RMS with 50 Hz fundamental and high-frequency PWM modulation. Use Value: Body diode t_rr ≤ 739 ns ensures minimal cross-conduction loss during synchronous rectification; 5.4 A @ 100 °C enables compact heatsink design.
EV Onboard Charger PFC	Medical Imaging Power Supply
Use Scenario: 6.6 kW bidirectional OBC using interleaved boost PFC with digital control and SiC diode output rectification. IC Role / Device Role / Timing Role: Boost switch in 650 V-rated interleaved phase, operating at 65–130 kHz with critical conduction mode (CrM). Use Value: 0.93 Ω R_DS(on) limits conduction loss to <1.2 W per phase at 12 A peak; Q_gd = 19 nC minimizes dead-time sensitivity.	Use Scenario: High-reliability X-ray generator supply requiring >99.99% uptime and zero field failures over 10-year service life. IC Role / Device Role / Timing Role: Main switching element in capacitor-charging flyback converter, cycling between standby and pulsed 50 kV output bursts. Use Value: Specified 2.8 V/ns dV/dt rating prevents spurious turn-on during rapid voltage transitions; 150 °C T_J(max) supports derated operation for extended MTBF.

Server SMPS Primary Switch

Industrial UPS Inverter Stage

Use Scenario: 1 kW telecom rectifier operating from 90–264 VAC input with active PFC front-end and LLC resonant secondary.

IC Role / Device Role / Timing Role: High-side main switch in asymmetric half-bridge topology, switching at 100–300 kHz with ZVS-assisted turn-on.

Use Value: 650 V rating accommodates reflected transients from 400 V DC bus; 325 mJ E_AS prevents failure during output short-circuit recovery.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output during grid outage, with battery-fed DC link.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge inverter stage, conducting 5.2 A RMS with 50 Hz fundamental and high-frequency PWM modulation.

Use Value: Body diode t_rr ≤ 739 ns ensures minimal cross-conduction loss during synchronous rectification; 5.4 A @ 100 °C enables compact heatsink design.

EV Onboard Charger PFC

Medical Imaging Power Supply

Use Scenario: 6.6 kW bidirectional OBC using interleaved boost PFC with digital control and SiC diode output rectification.

IC Role / Device Role / Timing Role: Boost switch in 650 V-rated interleaved phase, operating at 65–130 kHz with critical conduction mode (CrM).

Use Value: 0.93 Ω R_DS(on) limits conduction loss to <1.2 W per phase at 12 A peak; Q_gd = 19 nC minimizes dead-time sensitivity.

Use Scenario: High-reliability X-ray generator supply requiring >99.99% uptime and zero field failures over 10-year service life.

IC Role / Device Role / Timing Role: Main switching element in capacitor-charging flyback converter, cycling between standby and pulsed 50 kV output bursts.

Use Value: Specified 2.8 V/ns dV/dt rating prevents spurious turn-on during rapid voltage transitions; 150 °C T_J(max) supports derated operation for extended MTBF.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK65ZFP	650 V, 8.5 A, R_DS(on) = 0.95 Ω, Q_g = 42 nC, Superjunction Zener-protected	Integrated gate-source Zener clamps ±30 V; lower Q_g reduces driver stress but lacks published E_AS data	Preferred where gate protection is prioritized over avalanche validation; not drop-in due to different SOA curve shape
IXTH9N65X2	650 V, 9 A, R_DS(on) = 0.85 Ω, Q_g = 45 nC, HiPerFET Gen 2 with enhanced dV/dt immunity	Higher ID rating and lower R_DS(on); 3.5 V V_GS(th) requires tighter gate drive margin control	Selected when higher continuous current headroom is needed; same TO-220AB footprint but different thermal profile

Compared with STP9NK65ZFP and IXTH9N65X2, IRFB9N65APBF offers the only published 325 mJ E_AS value among the three-making it the preferred choice for unclamped inductive load applications where fault energy absorption is mission-critical.

Availability

IRFB9N65APBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed power switching applications requiring stable component supply across automotive, industrial, and medical production programs.

Supply support for IRFB9N65APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial and computing environments.

The IRFB9N65APBF belongs to Vishay's high-voltage planar MOSFET product line, engineered specifically for ruggedized offline AC/DC conversion where avalanche endurance and body diode performance are non-negotiable.

FAQ

What is the maximum continuous drain current for IRFB9N65APBF at 100 °C case temperature?

The IRFB9N65APBF supports 5.4 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 8.5 A rating at 25 °C and must be applied when designing for enclosed or convection-limited environments. The IRFB9N65APBF's R_thJC = 0.75 °C/W enables this current level with appropriate heatsinking.

Does IRFB9N65APBF have a fully characterized body diode, and what are its key parameters?

Yes, the IRFB9N65APBF features a fully characterized intrinsic body diode with documented reverse recovery time (t_rr = 493–739 ns), reverse recovery charge (Q_rr = 2.1–3.2 μC), and forward voltage (V_SD = 1.5 V at 5.2 A, 25 °C). These parameters are measured under standardized conditions and directly impact snubber design and EMI in flyback and resonant topologies using the IRFB9N65APBF.

Is IRFB9N65APBF RoHS-compliant and halogen-free?

IRFB9N65APBF is RoHS-compliant with lead-free terminations. The ordering variant IRFB9N65APbF-BE3 adds halogen-free compliance per IEC 61249-2-21. Both variants meet JEDEC J-STD-020 MSL-1 requirements and are suitable for lead-free reflow assembly. The IRFB9N65APBF datasheet explicitly confirms Pb-free construction and material categorization per Vishay document 99912.

What is the gate threshold voltage range for IRFB9N65APBF, and how does it affect drive design?

The IRFB9N65APBF has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This wide range necessitates gate drive voltages ≥10 V to ensure full enhancement across process variation and temperature extremes. Drive circuits must deliver ≥12 nC (Q_gs) with low impedance to minimize Miller-induced delay-critical for reliable operation of the IRFB9N65APBF in high-frequency SMPS.

Can IRFB9N65APBF be used in avalanche-mode operation, and what energy rating is guaranteed?

Yes, the IRFB9N65APBF is fully characterized for repetitive and single-pulse avalanche operation. It guarantees 325 mJ single-pulse avalanche energy (E_AS) and 16 mJ repetitive avalanche energy (E_AR) under defined test conditions (L = 24 mH, R_g = 25 Ω, I_AS = 5.2 A). These values are measured and published in the datasheet, enabling confident use of the IRFB9N65APBF in circuits subject to inductive switching stress.

IRFB9N65APBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 8.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 930mOhm @ 5.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1417 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB9N65APBF FAQ

1.How can I place an order for IRFB9N65APBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB9N65APBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB9N65APBF reliable?

The price and inventory of IRFB9N65APBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB9N65APBF is usually 5 days.

3.What payment methods are accepted for IRFB9N65APBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB9N65APBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB9N65APBF?

IRFB9N65APBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB9N65APBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB9N65APBF?

For technical support, including IRFB9N65APBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB9N65APBF requirements.

6.How does Aetrix verify that IRFB9N65APBF is sourced from the original manufacturer or authorized distributors?

All IRFB9N65APBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB9N65APBF meets industry standards.

7.What is the process for return or replacement of IRFB9N65APBF?

All IRFB9N65APBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB9N65APBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB9N65APBF part is unused and in its original packaging.

Return procedure for IRFB9N65APBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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