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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBA22N50APBF

Name: IRFBA22N50APBF
Brand: Vishay Siliconix
SKU: IRFBA22N50APBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFBA22N50APBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: Super-220™

Datasheet:: IRFBA22N50APBF.pdf

Description:: MOSFET N-CH 500V 24A SUPER-220

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Product details

Overview

IRFBA22N50APBF from Infineon Technologies is a 500 V, 24 A, 0.23 Ω N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-voltage SMPS, PFC boost stages, and full-bridge converters where low gate charge (115 nC) and rugged avalanche performance (1200 mJ single-pulse) are critical.

For engineers reviewing the IRFBA22N50APBF datasheet, IRFBA22N50APBF pinout, IRFBA22N50APBF application, or IRFBA22N50APBF equivalent, key selection criteria include its validated 500 V breakdown voltage, 24 A continuous drain current at 25°C, 0.23 Ω R_DS(on) at V_GS = 10 V, and effective output capacitance of 150 pF for hard-switching efficiency.

Technical Context

This device employs planar stripe silicon process with optimized cell geometry to achieve low R_DS(on) while maintaining robust dv/dt immunity (3.4 V/ns) and fully characterized avalanche energy rating. Its gate charge profile (Q_gd = 50 nC, Q_gs = 30 nC) supports clean switching in high-frequency power topologies.

The integrated body diode exhibits 1.5 V forward voltage at 23 A and 500–750 ns reverse recovery time, enabling reliable operation in synchronous rectification and bidirectional power flow applications without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Withstands up to 500 V drain-source blocking voltage before avalanche conduction begins.
R_DS(on) max	0.23 Ω @ V_GS = 10 V, I_D = 13.8 A - Enables low conduction loss in 24 A continuous power stages.
I_D @ T_C = 25°C	24 A - Maximum continuous drain current under heatsink-cooled conditions at room temperature.
Q_g total	115 nC - Determines gate driver strength requirement; enables simple drive with standard 12 V logic-level sources.
E_AS	1200 mJ - Single-pulse avalanche energy rating ensures reliability during inductive turn-off transients.
C_{oss eff.}	150 pF - Effective output capacitance used for calculating switching loss during V_DS rise from 0 to 400 V.
R_θJC	0.37 °C/W - Junction-to-case thermal resistance defines minimum heatsink interface requirement for thermal management.

Pinout & Package

IRFBA22N50APBF is housed in a through-hole TO-220AB package with isolated tab, rated for 300 °C soldering (10 s, 1.6 mm from case). The package provides mechanical stability and thermal path via mounting screw (recommended clip force: 20 N).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main power output terminal	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink.
Source	Power return / reference node	Serves as common return for load current and gate drive reference; connects to power ground plane.
Gate	Control input	High-impedance MOS control terminal; requires <115 nC charge for full enhancement; sensitive to ESD.

Key Features

Feature	Design Value
Low gate charge	115 nC total gate charge reduces driver complexity and switching losses in 100–500 kHz SMPS designs.
Improved dv/dt ruggedness	3.4 V/ns peak diode recovery dv/dt rating prevents spurious turn-on in high-noise bridge configurations.
Characterized avalanche capability	1200 mJ single-pulse avalanche energy allows safe operation under unclamped inductive switching stress.
Effective C_oss specification	150 pF effective output capacitance enables accurate hard-switching loss calculation across 0–400 V V_DS swing.
Body diode performance	500–750 ns t_rr and 6.4–9.6 µC Q_rr support reliable freewheeling in PFC and LLC resonant converters.

Applications

Server SMPS Primary Switch	PFC Boost Stage
Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100–300 kHz with 48 V output and 3.3 kW capacity. IC Role / Device Role / Timing Role: Main switching transistor in asymmetric half-bridge primary side, handling 24 A peak current at 500 V bus. Use Value: 0.23 Ω R_DS(on) minimizes conduction loss; 115 nC Q_g enables clean 200 ns turn-on with low-side gate driver IC.	Use Scenario: Active boost PFC front-end in industrial UPS systems requiring >98% efficiency at 10 kW. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter operating at 65–100 kHz. Use Value: 500 V V_DSS headroom accommodates 400 V DC bus + 100 V transient; 1200 mJ E_AS withstands line surge events.
Full-Bridge DC-DC Converter	Uninterruptible Power Supply Inverter
Use Scenario: Isolated 48 V to 12 V bi-directional DC-DC converter for telecom energy storage systems. IC Role / Device Role / Timing Role: Upper-leg switch in full-bridge topology with synchronous rectification on secondary side. Use Value: Low C_{oss eff.} (150 pF) reduces dead-time loss; rugged dv/dt immunity prevents false triggering during cross-conduction transitions.	Use Scenario: Online double-conversion UPS delivering clean 230 V AC output during grid failure with <10 ms switchover. IC Role / Device Role / Timing Role: Output H-bridge inverter stage converting 400 V DC bus to sinusoidal 230 V AC using SPWM. Use Value: Body diode t_rr ≤ 750 ns ensures minimal shoot-through risk during PWM dead-time; 24 A I_D supports 5 kVA continuous output.

Server SMPS Primary Switch

PFC Boost Stage

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100–300 kHz with 48 V output and 3.3 kW capacity.

IC Role / Device Role / Timing Role: Main switching transistor in asymmetric half-bridge primary side, handling 24 A peak current at 500 V bus.

Use Value: 0.23 Ω R_DS(on) minimizes conduction loss; 115 nC Q_g enables clean 200 ns turn-on with low-side gate driver IC.

Use Scenario: Active boost PFC front-end in industrial UPS systems requiring >98% efficiency at 10 kW.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter operating at 65–100 kHz.

Use Value: 500 V V_DSS headroom accommodates 400 V DC bus + 100 V transient; 1200 mJ E_AS withstands line surge events.

Full-Bridge DC-DC Converter

Uninterruptible Power Supply Inverter

Use Scenario: Isolated 48 V to 12 V bi-directional DC-DC converter for telecom energy storage systems.

IC Role / Device Role / Timing Role: Upper-leg switch in full-bridge topology with synchronous rectification on secondary side.

Use Value: Low C_{oss eff.} (150 pF) reduces dead-time loss; rugged dv/dt immunity prevents false triggering during cross-conduction transitions.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output during grid failure with <10 ms switchover.

IC Role / Device Role / Timing Role: Output H-bridge inverter stage converting 400 V DC bus to sinusoidal 230 V AC using SPWM.

Use Value: Body diode t_rr ≤ 750 ns ensures minimal shoot-through risk during PWM dead-time; 24 A I_D supports 5 kVA continuous output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW56N60M2	600 V V_DSS, 0.065 Ω R_DS(on), 56 A I_D, TO-247 package	Higher voltage rating and current capacity; larger footprint and higher gate charge (160 nC)	Preferred for 600 V systems requiring higher current density; requires upgraded gate driver and heatsinking.
IXFH32N50P	500 V V_DSS, 0.15 Ω R_DS(on), 32 A I_D, TO-247 package	Lower R_DS(on) and higher current rating; same voltage class but different thermal resistance (R_θJC = 0.33 °C/W)	Offers lower conduction loss in high-duty-cycle applications; TO-247 improves thermal margin over TO-220AB.

Compared with IRFBA22N50APBF, STW56N60M2 trades higher voltage margin and current for increased layout area and gate drive demand, while IXFH32N50P delivers lower R_DS(on) in a thermally superior package-both require PCB redesign due to TO-247 footprint mismatch.

Availability

IRFBA22N50APBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and high-speed power switching applications requiring stable component supply and long-term industrial-grade availability.

Supply support for IRFBA22N50APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

The IRFBA22N50APBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-reliability industrial power conversion where ruggedness, repeatable avalanche performance, and thermal stability are design-critical.

FAQ

What is the maximum junction temperature rating for IRFBA22N50APBF?

The IRFBA22N50APBF has a specified operating junction temperature range of –55 °C to +150 °C. This wide range supports deployment in demanding industrial environments such as UPS enclosures and server power supplies where ambient temperatures exceed 70 °C. Thermal derating begins above 25 °C case temperature at 2.7 W/°C, and the device must be mounted with recommended 20 N clip force to maintain R_θJC = 0.37 °C/W.

Does IRFBA22N50APBF have a fully characterized body diode?

Yes, the IRFBA22N50APBF includes a fully characterized intrinsic body diode with documented V_SD = 1.5 V at 23 A and T_J = 25 °C, reverse recovery time t_rr = 500–750 ns, and Q_rr = 6.4–9.6 µC. These parameters are measured under standardized conditions (di/dt = 100 A/µs, I_F = 23 A), enabling accurate loss modeling in PFC and bridge topologies where the body diode conducts during dead time.

Is IRFBA22N50APBF suitable for surface-mount assembly?

No, IRFBA22N50APBF is not recommended for surface-mount application. The datasheet explicitly states "not recommended for surface mount application" due to its TO-220AB through-hole package and thermal/mechanical design optimized for screw-mounted heatsinks. Attempting reflow or wave soldering risks delamination, bond wire damage, and compromised thermal performance. It must be assembled using through-hole insertion and mechanical fastening.

What gate voltage is required to fully enhance IRFBA22N50APBF?

The IRFBA22N50APBF achieves its specified R_DS(on) of 0.23 Ω at V_GS = 10 V, with gate threshold voltage V_GS(th) ranging from 2.0 V to 4.0 V. For reliable enhancement across temperature and process variation, a minimum gate drive of 12 V is recommended. Gate-to-source voltage must remain within ±30 V absolute maximum rating to prevent oxide damage.

How is the effective output capacitance (C_{oss eff.}) defined for IRFBA22N50APBF?

The effective output capacitance C_{oss eff.} = 150 pF for IRFBA22N50APBF is a fixed-value capacitance calibrated to replicate the actual energy stored in C_oss during V_DS ramp from 0 V to 400 V (80% of V_DSS). Unlike typical C_oss values measured at fixed V_DS, this parameter enables accurate switching loss calculation in hard-switched converters per Application Note AN1001, and is validated across temperature and bias conditions.

IRFBA22N50APBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: Super-220™

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 230mOhm @ 13.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 115 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 340W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-220™ (TO-273AA)

IRFBA22N50APBF FAQ

1.How can I place an order for IRFBA22N50APBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBA22N50APBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBA22N50APBF reliable?

The price and inventory of IRFBA22N50APBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBA22N50APBF is usually 5 days.

3.What payment methods are accepted for IRFBA22N50APBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBA22N50APBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBA22N50APBF?

IRFBA22N50APBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBA22N50APBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBA22N50APBF?

For technical support, including IRFBA22N50APBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBA22N50APBF requirements.

6.How does Aetrix verify that IRFBA22N50APBF is sourced from the original manufacturer or authorized distributors?

All IRFBA22N50APBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBA22N50APBF meets industry standards.

7.What is the process for return or replacement of IRFBA22N50APBF?

All IRFBA22N50APBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFBA22N50APBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBA22N50APBF part is unused and in its original packaging.

Return procedure for IRFBA22N50APBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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