Vishay Siliconix IRFBC20

Overview

IRFBC20 from Vishay Siliconix is a 200 V, 5.2 A N-channel power MOSFET in TO-220AB package, rated for repetitive avalanche and logic-level gate drive (V_GS(th) = 1.0–2.0 V), with R_DS(on) = 0.80 Ω at V_GS = 5 V, Q_g = 16 nC, and optimized for hard-switched DC-DC converters and motor control stages.

For engineers reviewing the IRFBC20 datasheet, IRFBC20 pinout, IRFBC20 application, or IRFBC20 equivalent, key selection considerations include its 200 V V_DS, 5.2 A continuous drain current at T_C = 25 °C, 2.5 °C/W junction-to-case thermal resistance, fast switching (t_r = 31 ns, t_f = 17 ns), and body diode recovery time (t_rr = 180–270 ns) in industrial power conversion designs.

Technical Context

The IRFBC20 employs a third-generation planar vertical DMOS structure enabling robust unclamped inductive switching with E_AS = 125 mJ and I_AR = 5.2 A. Its gate threshold voltage range (1.0–2.0 V) ensures reliable turn-on with 4–5 V logic drivers, while low Q_gd/Q_g ratio (9.6/16 nC) supports stable high-speed operation under varying load conditions.

Thermal design is enabled by R_thJC = 2.5 °C/W and R_thCS = 0.50 °C/W, allowing 50 W dissipation at T_C = 25 °C. The integral body diode exhibits V_SD = 1.8 V at 5.2 A and t_rr = 180–270 ns with controlled dI/dt = 100 A/μs, making it suitable for freewheeling paths where reverse recovery behavior must be predictable.

Key Specifications

Pinout & Package

IRFBC20 is housed in a TO-220AB package with isolated tab (drain-connected), standard mounting hole, and 1.1 N·m screw torque rating. Thermal interface requires flat, greased heatsink surface for optimal R_thCS = 0.50 °C/W performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFBC20, IRFBC30 offers higher voltage headroom at the cost of increased conduction and switching losses, while STP20NM20 delivers superior R_DS(on) but demands more gate drive strength and provides reduced unclamped inductive ruggedness - making IRFBC20 the balanced choice for cost-sensitive, logic-driven 200 V industrial power switches.

Availability

IRFBC20 is available at Aetrix Electronics and suitable for switch-mode power supplies, DC motor drives, and inductive load switching requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRFBC20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFBC20 belongs to Vishay's legacy power MOSFET family designed for cost-effective, ruggedized switching in commercial and industrial power conversion - emphasizing logic-level drive, avalanche robustness, and TO-220AB thermal performance.

FAQ

What is the maximum continuous drain current for IRFBC20 at 100 °C case temperature?

The IRFBC20 supports 3.3 A continuous drain current at T_C = 100 °C, derived from its linear derating factor of 0.40 W/°C and 50 W P_D rating at 25 °C. This value reflects thermal limitation rather than semiconductor current capacity, and must be validated against actual heatsink performance in the target application layout.

Does IRFBC20 have a specified body diode reverse recovery charge (Q_rr)?

Yes, the IRFBC20 specifies Q_rr = 1.1–1.7 μC under test conditions of T_J = 25 °C, I_F = 5.2 A, and dI/dt = 100 A/μs. This parameter is critical for estimating commutation loss in freewheeling paths and must be used with t_rr = 180–270 ns to model diode recovery behavior accurately.

Is IRFBC20 suitable for use with 3.3 V microcontroller GPIOs?

Yes, the IRFBC20 is logic-level rated with V_GS(th) = 1.0–2.0 V and R_DS(on) = 1.0 Ω at V_GS = 4 V, enabling full enhancement from 3.3 V sources. However, gate capacitance (C_iss = 360 pF) requires careful attention to rise/fall time control to avoid excessive switching loss at high frequencies.

What is the thermal resistance from junction to case (R_thJC) for IRFBC20?

The IRFBC20 has a maximum junction-to-case thermal resistance (R_thJC) of 2.5 °C/W, measured from die to TO-220AB drain tab. This value assumes proper mechanical mounting with thermal grease and flat heatsink surface, and is essential for calculating maximum allowable power dissipation under real-world thermal conditions.

Are there halogen-free versions of IRFBC20 available?

Yes, the IRFBC20PbF-BE3 variant is both lead-free and halogen-free, compliant with Vishay's material categorization standard (document 99912). It shares identical electrical and thermal specifications with the standard IRFBC20PbF, differing only in termination plating and packaging materials.