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Vishay Siliconix IRFBC20SPBF
- Part No.:
- IRFBC20SPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFBC20SPBF.pdf
- Description:
- MOSFET N-CH 600V 2.2A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,665
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Product details
Overview
IRFBC20SPBF from Vishay Siliconix is a 600 V, 2.2 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 4.4 Ω RDS(on) at VGS = 10 V, 18 nC total gate charge, and full avalanche rating-designed for high-voltage flyback and offline SMPS primary-side switching.
For engineers reviewing the IRFBC20SPBF datasheet, IRFBC20SPBF pinout, IRFBC20SPBF application, or IRFBC20SPBF equivalent, key selection criteria include its 600 V blocking capability, 150 °C junction rating, dynamic dV/dt tolerance of 3.0 V/ns, and compatibility with compact surface-mount PCB layouts requiring robust unclamped inductive switching performance.
Technical Context
This device implements a third-generation planar vertical DMOS structure optimized for high-voltage hard-switching topologies. Its design integrates low gate charge (Qg = 18 nC) with fast switching (tr = 23 ns, tf = 25 ns) and controlled body diode recovery (trr = 290–580 ns, Qrr = 0.67–1.3 μC), enabling efficient operation in discontinuous conduction mode (DCM) flyback converters.
The IRFBC20SPBF uses a fully rated avalanche architecture supporting single-pulse EAS = 84 mJ and repetitive EAR = 5.0 mJ, with thermal resistance RthJC = 2.5 °C/W enabling high-power density mounting on FR-4 PCBs. Its gate threshold voltage range (2.0–4.0 V) ensures reliable turn-on under standard 10 V gate drive while maintaining noise immunity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Supports universal-input offline AC/DC designs up to 265 VAC with margin for surge and ringing. |
| RDS(on) | 4.4 Ω @ VGS = 10 V - Enables low conduction loss in <2.2 A primary-side current applications. |
| Qg | 18 nC - Reduces gate driver power demand and enables use with low-current controllers like UC384x. |
| EAS | 84 mJ - Withstands unclamped inductive energy during startup or overload without failure. |
| TJ max | +150 °C - Allows operation in sealed or thermally constrained industrial power supplies. |
| dV/dt rating | 3.0 V/ns - Resists false triggering due to parasitic coupling in high-dV/dt switch-node environments. |
| ID cont. | 2.2 A @ TC = 25 °C - Defines maximum continuous current with heatsinking via PCB copper pour. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with G and S on gull-wing leads, D on underside thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives 10 V logic-level drive; input capacitance Ciss = 350 pF shapes gate resistor selection for EMI vs. switching loss trade-off. |
| D (Drain) | High-voltage output node | Connected to transformer primary and AC line; electrically and thermally tied to exposed backside metal pad. |
| S (Source) | Reference node / return path | Forms common reference for gate drive and current sensing; internal source inductance LS = 7.5 nH affects diode reverse recovery behavior. |
Key Features
| Feature | Design Value |
|---|---|
| Surface-mount D2PAK package | Enables automated assembly and high power density; thermal pad dissipates up to 2.0 W in typical PCB layout. |
| Dynamic dV/dt rating | 3.0 V/ns ensures stable operation without spurious turn-on in noisy high-frequency switch-node environments. |
| Full avalanche rating | Single-pulse EAS = 84 mJ supports robustness against transformer leakage inductance energy spikes. |
| Fast body diode recovery | trr = 290–580 ns and Qrr = 0.67–1.3 μC reduce switching loss and EMI in DCM flyback snubberless designs. |
| 150 °C operating temperature | Permits extended lifetime in enclosed industrial power supplies without forced air cooling. |
Applications
| AC/DC Adapter Primary Switch | Industrial Flyback Power Supply |
|---|---|
Use Scenario: 12–24 W universal-input wall adapter powering IoT sensors and smart home devices. IC Role / Device Role / Timing Role: Primary-side high-side switch in DCM flyback topology, driven by UC3842-based controller. Use Value: Low RDS(on) and fast switching minimize no-load power and improve efficiency across load range. |
Use Scenario: 36 W isolated auxiliary supply in PLC I/O modules operating in ambient up to 70 °C. IC Role / Device Role / Timing Role: Main switching element handling 600 V transient surges per IEC 61000-4-5 Level 3. Use Value: 150 °C TJ rating and full avalanche capability ensure reliability under sustained overvoltage stress. |
| LED Driver Secondary-Side Sync Rectifier | Offline SMPS Standby Converter |
Use Scenario: High-efficiency secondary-side synchronous rectification in constant-current LED drivers. IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode; body diode used for freewheeling before gate activation. Use Value: Controlled Qrr and low VSD = 1.6 V reduce reverse recovery loss and forward conduction loss simultaneously. |
Use Scenario: Auxiliary 5 V/100 mA standby supply in ATX PSUs, active during system sleep states. IC Role / Device Role / Timing Role: Primary-side switch operating at fixed 65 kHz with burst-mode control during light load. Use Value: Low Qg = 18 nC minimizes gate drive loss during frequent burst-mode transitions, improving no-load efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP6NK60ZFP | 600 V, 5.5 Ω RDS(on), 16 nC Qg, TO-220FP package | Through-hole mounting; higher RDS(on) increases conduction loss but lower Qg eases gate drive | Preferred where board space allows through-hole and thermal mass improves transient thermal response |
| FQP6N60C | 600 V, 5.0 Ω RDS(on), 22 nC Qg, TO-220 package | Higher gate charge increases driver loss; lacks specified dV/dt rating and avalanche data | Acceptable for cost-sensitive non-safety-critical designs where full avalanche ruggedness is not required |
Compared with STP6NK60ZFP and FQP6N60C, the IRFBC20SPBF offers superior surface-mount integration, lower on-resistance, and documented dynamic dV/dt and avalanche performance-making it the preferred choice for space-constrained, high-reliability offline SMPS where PCB real estate and surge robustness are critical.
Availability
IRFBC20SPBF is available at Aetrix Electronics and suitable for AC/DC adapters, industrial flyback supplies, LED drivers, and standby converters requiring stable component supply and long-term manufacturability.
Supply support for IRFBC20SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFBC20SPBF belongs to Vishay's third-generation high-voltage power MOSFET family engineered for rugged, high-efficiency offline switching applications-emphasizing avalanche strength, thermal stability, and surface-mount manufacturability.
FAQ
What is the maximum continuous drain current for IRFBC20SPBF at 100 °C case temperature?
The IRFBC20SPBF supports 1.4 A continuous drain current at TC = 100 °C, derated linearly from 2.2 A at 25 °C using a factor of 0.40 W/°C. This reflects thermal limitations of the D2PAK package when mounted on standard FR-4 PCBs without additional heatsinking. Designers must verify junction temperature rise using RthJC = 2.5 °C/W and actual power dissipation in their layout. The IRFBC20SPBF remains within safe operating area up to 150 °C junction temperature.
Does IRFBC20SPBF have a specified peak diode recovery dv/dt rating?
Yes, the IRFBC20SPBF has a specified peak diode recovery dv/dt rating of 3.0 V/ns under test conditions of ISD ≤ 2.2 A, dI/dt ≤ 40 A/μs, VDD ≤ VDS, and TJ ≤ 150 °C. This parameter quantifies the device's ability to withstand rapid voltage transients across the body diode during commutation without false turn-on. The IRFBC20SPBF achieves this via optimized die structure and internal source inductance (LS = 7.5 nH), making it suitable for snubberless flyback and resonant converter designs.
Is IRFBC20SPBF RoHS-compliant and halogen-free?
Yes, IRFBC20SPBF is lead (Pb)-free and halogen-free, conforming to Vishay's material categorization per document 99912. It carries the "-GE3" suffix designation in Vishay's ordering nomenclature for RoHS-compliant versions. The "PbF" suffix in IRFBC20SPBF indicates lead-free termination with matte tin plating, verified per JEDEC J-STD-609. No exemptions apply, and the device meets EU RoHS Directive 2011/65/EU and China RoHS II requirements. The IRFBC20SPBF is suitable for consumer, industrial, and medical end equipment requiring full environmental compliance.
What is the gate-source threshold voltage range for IRFBC20SPBF?
The gate-source threshold voltage (VGS(th)) for IRFBC20SPBF is specified from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise margin against spurious triggering in electrically noisy power supply environments. The IRFBC20SPBF is not a logic-level MOSFET; it requires ≥ 8 V for full enhancement and minimal RDS(on). Gate drive design must account for this threshold spread to guarantee consistent switching timing across temperature and unit variance.
Can IRFBC20SPBF be used in avalanche mode for energy clamping?
Yes, the IRFBC20SPBF is fully avalanche rated with single-pulse EAS = 84 mJ and repetitive EAR = 5.0 mJ, validated per test condition VDD = 50 V, starting TJ = 25 °C, L = 31 mH, Rg = 25 Ω, and IAS = 2.2 A. This makes it suitable for unclamped inductive switching in flyback transformers and relay drivers where energy from leakage inductance must be safely absorbed. The IRFBC20SPBF's ruggedized die design ensures repeatable avalanche performance without degradation, provided pulse width and duty cycle remain within datasheet limits.
IRFBC20SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.4Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRFBC20SPBF FAQ
1.How can I place an order for IRFBC20SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFBC20SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFBC20SPBF reliable?
The price and inventory of IRFBC20SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBC20SPBF is usually 5 days.
3.What payment methods are accepted for IRFBC20SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBC20SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFBC20SPBF?
IRFBC20SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFBC20SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFBC20SPBF?
For technical support, including IRFBC20SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBC20SPBF requirements.
6.How does Aetrix verify that IRFBC20SPBF is sourced from the original manufacturer or authorized distributors?
All IRFBC20SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBC20SPBF meets industry standards.
7.What is the process for return or replacement of IRFBC20SPBF?
All IRFBC20SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFBC20SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFBC20SPBF part is unused and in its original packaging.
Return procedure for IRFBC20SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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