Vishay Siliconix IRFBC30

Overview

IRFBC30 from Vishay Siliconix is a 600 V, 3.6 A N-channel power MOSFET in TO-220AB package, featuring 2.2 Ω R_DS(on) at V_GS = 10 V, 31 nC total gate charge, and repetitive avalanche rating up to 3.6 A - designed for high-voltage flyback and offline SMPS primary-side switching.

For engineers reviewing the IRFBC30 datasheet, IRFBC30 pinout, IRFBC30 application, or IRFBC30 equivalent, key selection criteria include its 600 V blocking capability, low gate charge for efficient hard-switching, rugged unclamped inductive switching performance, and compatibility with standard through-hole PCB layouts requiring thermal management up to 74 W at T_C = 25 °C.

Technical Context

This third-generation planar vertical power MOSFET uses a robust silicon process optimized for high-voltage operation with controlled dV/dt immunity (3.0 V/ns) and intrinsic body diode recovery (t_rr = 370–810 ns). Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 10 V logic-level drivers.

The device supports linear-mode operation within SOA limits and delivers stable R_DS(on) over temperature (0.62 V/°C V_DS tempco), while its low junction-to-case thermal resistance (1.7 °C/W) enables direct heatsink mounting without isolation washers in industrial power supplies.

Key Specifications

Pinout & Package

IRFBC30 is housed in a TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole footprint, and 1.7 °C/W junction-to-case thermal resistance. Mounting torque: 10 lbf·in (1.1 N·m) for 6-32 or M3 screw.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP6NK60ZFP and FQP6N60C, the IRFBC30 offers balanced trade-offs: moderate gate charge for mid-frequency switching, verified repetitive avalanche robustness for unclamped inductive loads, and industry-standard TO-220AB mechanical compatibility - making it suitable where reliability under transient stress outweighs marginal conduction or switching gains.

Availability

IRFBC30 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial flyback converters, and LED driver power stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFBC30 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRFBC30 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for ruggedized switching in cost-sensitive offline power conversion systems with emphasis on avalanche survivability and thermal performance.

FAQ

What is the maximum continuous drain current for IRFBC30 at 100 °C case temperature?

The IRFBC30 supports 2.3 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied in thermally constrained designs. The IRFBC30 maintains safe operation within its SOA when used with appropriate heatsinking and ambient airflow.

Does IRFBC30 have a fully rated body diode for freewheeling applications?

Yes, the IRFBC30 integrates a robust body diode rated for 3.6 A continuous source-drain current and 14 A pulsed current. Its reverse recovery time (t_rr = 370–810 ns) and charge (Q_rr = 2.0–4.2 μC) are specified under standardized test conditions, enabling predictable performance in freewheeling and synchronous rectification circuits. The IRFBC30 body diode is not optimized for ultra-fast recovery but is fully characterized for general-purpose use.

Is IRFBC30 RoHS-compliant and halogen-free?

The IRFBC30PbF-BE3 variant is both lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and JEDEC JS709B requirements. Standard IRFBC30PbF is Pb-free but not halogen-free. Both variants comply with Vishay's material categorization standards documented in www.vishay.com/doc?99912. The IRFBC30PbF-BE3 is the recommended version for environmentally regulated designs.

Can IRFBC30 be used in linear (active) mode operation?

Yes, the IRFBC30 is characterized for linear-mode operation within its Safe Operating Area (SOA), as shown in Figure 8 of the datasheet. It supports limited DC bias conditions at reduced V_DS and I_D, provided junction temperature remains below 150 °C and power dissipation stays within thermal limits defined by R_thJC = 1.7 °C/W. The IRFBC30 should not be operated continuously in linear mode without active thermal monitoring.

What is the gate-source leakage specification for IRFBC30 at ±20 V?

The IRFBC30 exhibits gate-source leakage current (I_GSS) of ±100 nA maximum at V_GS = ±20 V and T_J = 25 °C, per its specifications table. This low leakage ensures minimal standby power loss and stable gate bias in high-impedance drive circuits. The IRFBC30 maintains this performance across its full operating temperature range, supporting reliable operation in battery-backed or low-power control systems.