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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBC30A

Name: IRFBC30A
Brand: Vishay Siliconix
SKU: IRFBC30A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFBC30A

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFBC30A.pdf

Description:: MOSFET N-CH 600V 3.6A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFBC30A from Vishay Siliconix is a 600 V, 3.6 A N-channel power MOSFET in TO-220AB package, featuring 2.2 Ω R_DS(on) at V_GS = 10 V, 23 nC total gate charge, and 290 mJ single-pulse avalanche energy-designed for high-voltage flyback SMPS topologies requiring rugged unclamped inductive switching.

For engineers reviewing the IRFBC30A datasheet, IRFBC30A pinout, IRFBC30A application, or IRFBC30A equivalent, this device's validated dV/dt ruggedness (7.0 V/ns), characterized C_{oss eff.} (31 pF), body diode recovery time (400–600 ns), and thermal resistance (R_thJC = 1.7 °C/W) are critical for snubberless flyback and UPS design validation.

Technical Context

The IRFBC30A employs a planar vertical DMOS structure optimized for high-voltage blocking and avalanche-rated operation. Its gate threshold voltage (2.0–4.5 V) and low Q_gd/Q_g ratio (11/23 ≈ 48%) support stable hard-switching control with moderate gate drive strength.

It delivers specified linear SOA up to 10 ms pulses and supports repetitive avalanche current (I_AR = 3.6 A) under defined conditions (T_J ≤ 150 °C, dI/dt ≤ 170 A/μs). The integral body diode is characterized for reverse recovery (Q_rr = 1.1–1.7 μC, t_rr = 400–600 ns) and forward conduction (V_SD = 1.6 V at 3.6 A).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 480 V DC bus designs with 25 % margin for transient overvoltage
R_DS(on)	2.2 Ω @ V_GS = 10 V - determines conduction loss in continuous 3.6 A drain current operation
Q_g	23 nC - defines minimum gate driver current requirement for 100 ns switching transitions
E_AS	290 mJ - enables reliable unclamped inductive switching in flyback transformer reset
dV/dt rating	7.0 V/ns - ensures immunity to parasitic turn-on during high-slew-rate voltage transients
R_thJC	1.7 °C/W - allows 74 W dissipation with 127 °C case-to-junction rise at T_C = 25 °C
C_{oss eff.}	31 pF - models actual output capacitance charging behavior from 0–480 V for soft-start and ZVS estimation

Pinout & Package

IRFBC30A is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standard 3-pin layout, and 1.1 N·m mounting torque specification.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; 5.4 nC Q_gs sets Miller plateau timing
D (Drain)	High-side power switch node	Connected to TO-220 tab; electrically isolated but thermally coupled to heatsink
S (Source)	Power return reference	Common return for gate drive and load current; defines local ground for driver IC placement

Key Features

Feature	Design Value
Low Q_g (23 nC)	Reduces gate driver power loss and simplifies selection of low-current drivers (e.g., TC4420)
Specified C_{oss eff.} (31 pF)	Enables accurate prediction of turn-on losses and resonant timing in flyback snubberless designs
Avalanche-rated (E_AS = 290 mJ)	Eliminates need for external clamping in transformer reset, reducing BOM count in cost-sensitive SMPS
Characterized dV/dt ruggedness (7.0 V/ns)	Prevents false triggering during fast drain voltage transitions in high-frequency converters
Body diode t_rr (400–600 ns)	Supports synchronous rectification compatibility in secondary-side active clamp configurations

Applications

Switch Mode Power Supply (Flyback)	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in 60–150 W offline flyback converter with 400 V DC bus. IC Role / Device Role / Timing Role: High-voltage power switch handling transformer reset energy via avalanche conduction. Use Value: 290 mJ E_AS and 3.6 A I_AR allow reliable operation without snubber, reducing component count and board area.	Use Scenario: DC-DC boost stage in line-interactive UPS converting 36–72 V battery to 400 V DC bus. IC Role / Device Role / Timing Role: Fast-switching high-side switch managing bidirectional power flow during transfer mode. Use Value: 7.0 V/ns dV/dt rating prevents spurious turn-on during rapid bus voltage transitions during AC/DC switchover.
High-Speed Power Switching	Industrial Motor Drive Snubber
Use Scenario: Solid-state relay replacement in PLC output modules switching 24–48 V DC loads at 10 kHz. IC Role / Device Role / Timing Role: Low-duty-cycle, high-repetition-rate power switch with minimal gate drive overhead. Use Value: 23 nC Q_g enables full switching with <1 mA average gate current from microcontroller GPIO + buffer.	Use Scenario: Clamping element across relay coils or small DC motors in factory automation controllers. IC Role / Device Role / Timing Role: Avalanche-energy-absorbing switch protecting control circuitry from inductive kickback. Use Value: Validated 290 mJ single-pulse avalanche capability provides deterministic protection without derating.

Switch Mode Power Supply (Flyback)

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in 60–150 W offline flyback converter with 400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch handling transformer reset energy via avalanche conduction.

Use Value: 290 mJ E_AS and 3.6 A I_AR allow reliable operation without snubber, reducing component count and board area.

Use Scenario: DC-DC boost stage in line-interactive UPS converting 36–72 V battery to 400 V DC bus.

IC Role / Device Role / Timing Role: Fast-switching high-side switch managing bidirectional power flow during transfer mode.

Use Value: 7.0 V/ns dV/dt rating prevents spurious turn-on during rapid bus voltage transitions during AC/DC switchover.

High-Speed Power Switching

Industrial Motor Drive Snubber

Use Scenario: Solid-state relay replacement in PLC output modules switching 24–48 V DC loads at 10 kHz.

IC Role / Device Role / Timing Role: Low-duty-cycle, high-repetition-rate power switch with minimal gate drive overhead.

Use Value: 23 nC Q_g enables full switching with <1 mA average gate current from microcontroller GPIO + buffer.

Use Scenario: Clamping element across relay coils or small DC motors in factory automation controllers.

IC Role / Device Role / Timing Role: Avalanche-energy-absorbing switch protecting control circuitry from inductive kickback.

Use Value: Validated 290 mJ single-pulse avalanche capability provides deterministic protection without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 5.5 A, R_DS(on) = 1.2 Ω, Q_g = 27 nC, TO-220FP package (full-pack)	Higher current rating but higher R_DS(on) mismatch in parallel designs due to positive tempco divergence	Preferred where higher continuous current is needed and space permits larger thermal pad footprint
FQP6N60C	600 V, 5.4 A, R_DS(on) = 1.4 Ω, Q_g = 25 nC, TO-220 package, no avalanche rating published	Lacks specified E_AS and dV/dt ruggedness data - requires external clamping in flyback	Acceptable only in non-avalanche-reliant topologies with robust snubbers and lower dV/dt stress

Compared with STP6NK60ZFP and FQP6N60C, the IRFBC30A offers verified avalanche energy (290 mJ) and dV/dt immunity (7.0 V/ns) critical for snubberless flyback, while its 2.2 Ω R_DS(on) balances conduction loss and thermal management in 3–4 A continuous designs.

Availability

IRFBC30A is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and industrial motor control applications requiring stable component supply and long-term lifecycle continuity.

Supply support for IRFBC30A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and application-specific characterization.

The IRFBC30A belongs to Vishay's high-voltage planar MOSFET product line, engineered for demanding offline power conversion where avalanche capability, dV/dt immunity, and consistent SOA performance are mandatory.

FAQ

What is the maximum continuous drain current for IRFBC30A at 100 °C case temperature?

The IRFBC30A supports 2.3 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the TO-220AB package and must be applied when ambient or heatsink conditions prevent maintaining T_C ≤ 25 °C. Designers should verify junction temperature using R_thJC = 1.7 °C/W and actual power dissipation in IRFBC30A.

Does IRFBC30A have a fully characterized body diode for synchronous rectification?

Yes, the IRFBC30A datasheet specifies full body diode parameters: V_SD = 1.6 V at 3.6 A and T_J = 25 °C, t_rr = 400–600 ns, and Q_rr = 1.1–1.7 μC. These values are measured under controlled dI/dt (100 A/μs) and enable accurate modeling of reverse recovery loss in secondary-side synchronous rectifier circuits using IRFBC30A.

Is IRFBC30A RoHS-compliant and halogen-free?

Yes, the ordering variant IRFBC30APbF-BE3 is both lead (Pb)-free and halogen-free, as confirmed in the Vishay datasheet S21-0868-Rev. C. The "BE3" suffix denotes compliance with JEDEC JS709B and IPC-1752A standards. Standard IRFBC30APbF is Pb-free but not halogen-free.

What is the gate threshold voltage range for IRFBC30A, and how does it affect drive design?

The IRFBC30A has a V_GS(th) range of 2.0 V to 4.5 V at I_D = 250 μA. This wide spread necessitates gate drive voltages ≥10 V to ensure full enhancement across process and temperature extremes. Driving IRFBC30A with only 5 V risks incomplete turn-on and excessive R_DS(on), especially at elevated temperatures.

Can IRFBC30A replace IRFBC30 in existing designs?

Yes, IRFBC30A is a direct replacement for IRFBC30, with identical pinout, package, and electrical specifications. The "A" suffix denotes an updated version with improved gate, avalanche, and dynamic dV/dt ruggedness per Vishay's revision history. No PCB or schematic changes are required when upgrading from IRFBC30 to IRFBC30A.

IRFBC30A Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.2Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 510 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFBC30A FAQ

1.How can I place an order for IRFBC30A through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBC30A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBC30A reliable?

The price and inventory of IRFBC30A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBC30A is usually 5 days.

3.What payment methods are accepted for IRFBC30A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBC30A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBC30A?

IRFBC30A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBC30A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBC30A?

For technical support, including IRFBC30A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBC30A requirements.

6.How does Aetrix verify that IRFBC30A is sourced from the original manufacturer or authorized distributors?

All IRFBC30A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBC30A meets industry standards.

7.What is the process for return or replacement of IRFBC30A?

All IRFBC30A units undergo pre-shipment inspection (PSI). If there is an issue with IRFBC30A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBC30A part is unused and in its original packaging.

Return procedure for IRFBC30A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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