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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBC30APBF-BE3

Name: IRFBC30APBF-BE3
Brand: Vishay Siliconix
SKU: IRFBC30APBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFBC30APBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFBC30APBF-BE3.pdf

Description:: MOSFET N-CH 600V 3.6A TO220AB

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Product details

Overview

IRFBC30APBF-BE3 from Vishay Siliconix is a 600 V, 3.6 A N-channel power MOSFET in TO-220AB package, featuring R_DS(on) = 2.2 Ω at V_GS = 10 V, Q_g = 23 nC, and 290 mJ single-pulse avalanche energy - designed for high-voltage flyback SMPS primary-side switching.

For engineers reviewing the IRFBC30APBF-BE3 datasheet, IRFBC30APBF-BE3 pinout, IRFBC30APBF-BE3 application, or IRFBC30APBF-BE3 equivalent, key selection criteria include its 600 V blocking rating, low gate charge for simplified drive, rugged avalanche capability, and TO-220AB thermal performance in offline AC/DC converters.

Technical Context

This device is a planar stripe silicon MOSFET optimized for hard-switched, high-voltage DC-DC conversion. Its 600 V V_DS rating supports universal-input (85–265 V_AC) offline topologies, while its 2.2 Ω R_DS(on) balances conduction loss and die size for cost-sensitive designs.

Dynamic parameters - including C_iss = 510 pF, C_oss = 70 pF, and Q_gd/Q_gs ratio of ~2.0 - indicate moderate switching speed and controllable dV/dt behavior. The 7.0 V/ns peak diode recovery dV/dt rating confirms suitability for unclamped inductive switching with controlled turn-off stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports full-range AC input rectified to ≥480 V DC bus without derating
R_DS(on)	2.2 Ω @ V_GS = 10 V - enables <3.6 A continuous drain current at T_C = 25 °C with ≤74 W dissipation
Q_g	23 nC - allows gate drive with standard 12 V logic-level sources and <20 ns switching delays
E_AS	290 mJ - withstands unclamped inductive energy in flyback snubberless operation up to 3.6 A
T_J Range	−55 °C to +150 °C - qualified for industrial ambient environments with thermal margin in sealed enclosures
R_thJC	1.7 °C/W - enables direct heatsink mounting for >50 W power handling with minimal thermal interface resistance

Pinout & Package

IRFBC30APBF-BE3 uses the industry-standard TO-220AB package with isolated tab (drain-connected), offering mechanical robustness and proven thermal performance in power supply applications.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V drive to fully enhance channel; 5.4 nC Q_gs ensures fast turn-on with low Miller effect
D (Drain)	High-side power terminal	Connected to internal die backside; electrically tied to metal tab - requires isolation from heatsink unless floating
S (Source)	Reference node	Serves as return path for load current and gate drive reference; body diode anode is internally connected here

Key Features

Feature	Design Value
Low Q_g	23 nC total gate charge reduces driver IC loading and simplifies gate resistor selection for EMI control
Avalanche ruggedness	290 mJ single-pulse E_AS enables reliable operation in snubberless flyback and resonant converters
Characterized C_oss	70 pF output capacitance at 25 V enables accurate soft-switching timing prediction in quasi-resonant designs
Body diode t_rr	400–600 ns reverse recovery time supports moderate-frequency synchronous rectification in secondary-side circuits

Applications

Offline Flyback SMPS	UPS DC-DC Stage
Use Scenario: Primary-side switch in 20–60 W universal-input AC/DC adapters with no auxiliary snubber. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding during each PWM cycle. Use Value: 600 V rating eliminates need for voltage clamping above 480 V DC bus; 290 mJ E_AS sustains repeated unclamped inductive turn-off.	Use Scenario: DC-DC boost converter stage in line-interactive UPS systems converting 24 V or 48 V battery to regulated 380 V DC bus. IC Role / Device Role / Timing Role: Main switching element in hard-switched boost topology operating at 50–100 kHz. Use Value: 2.2 Ω R_DS(on) limits conduction loss at 3.6 A peak current; TO-220AB package supports forced-air cooling in compact chassis.
Industrial HV Power Supply	Laser Driver Switch
Use Scenario: High-reliability 400 V output power supply for PLC I/O modules requiring long-term stability under thermal cycling. IC Role / Device Role / Timing Role: Primary-side switching transistor in double-forward or half-bridge configuration with active clamp. Use Value: −55 °C to +150 °C junction range ensures operation across extended temperature profiles; 1.7 °C/W R_thJC enables predictable thermal design.	Use Scenario: Pulsed high-voltage switch driving CO₂ laser tubes requiring precise 100–500 μs pulses at 300–600 V. IC Role / Device Role / Timing Role: Fast-turning main switch controlling discharge of high-energy storage capacitor into laser load. Use Value: 14 A pulsed drain current (I_DM) and 7.0 V/ns dV/dt rating support clean, jitter-free pulse edges without parasitic turn-on.

Offline Flyback SMPS

UPS DC-DC Stage

Use Scenario: Primary-side switch in 20–60 W universal-input AC/DC adapters with no auxiliary snubber.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding during each PWM cycle.

Use Value: 600 V rating eliminates need for voltage clamping above 480 V DC bus; 290 mJ E_AS sustains repeated unclamped inductive turn-off.

Use Scenario: DC-DC boost converter stage in line-interactive UPS systems converting 24 V or 48 V battery to regulated 380 V DC bus.

IC Role / Device Role / Timing Role: Main switching element in hard-switched boost topology operating at 50–100 kHz.

Use Value: 2.2 Ω R_DS(on) limits conduction loss at 3.6 A peak current; TO-220AB package supports forced-air cooling in compact chassis.

Industrial HV Power Supply

Laser Driver Switch

Use Scenario: High-reliability 400 V output power supply for PLC I/O modules requiring long-term stability under thermal cycling.

IC Role / Device Role / Timing Role: Primary-side switching transistor in double-forward or half-bridge configuration with active clamp.

Use Value: −55 °C to +150 °C junction range ensures operation across extended temperature profiles; 1.7 °C/W R_thJC enables predictable thermal design.

Use Scenario: Pulsed high-voltage switch driving CO₂ laser tubes requiring precise 100–500 μs pulses at 300–600 V.

IC Role / Device Role / Timing Role: Fast-turning main switch controlling discharge of high-energy storage capacitor into laser load.

Use Value: 14 A pulsed drain current (I_DM) and 7.0 V/ns dV/dt rating support clean, jitter-free pulse edges without parasitic turn-on.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 5.5 A, R_DS(on) = 1.2 Ω, Q_g = 22 nC, TO-220FP package (full-pack)	Higher current rating but lower avalanche energy (150 mJ vs. 290 mJ); not rated for unclamped inductive switching at same stress level	Prefer when higher continuous current is needed and avalanche stress is mitigated by snubbers
FQP6N60C	600 V, 5.4 A, R_DS(on) = 1.4 Ω, Q_g = 24 nC, TO-220 package (non-isolated tab)	Lower R_DS(on) improves conduction efficiency but lacks documented E_AS rating; tab is source-connected	Choose when thermal interface simplicity is prioritized and avalanche immunity is handled externally

Compared with STP6NK60ZFP and FQP6N60C, IRFBC30APBF-BE3 offers superior unclamped avalanche robustness (290 mJ) and a drain-isolated TO-220AB package - making it preferred for snubberless flyback and high-reliability industrial SMPS where layout constraints prevent source-tab grounding.

Availability

IRFBC30APBF-BE3 is available at Aetrix Electronics and suitable for offline AC/DC adapters, uninterruptible power supplies, and industrial HV power supplies requiring stable component supply and long-lifecycle support.

Supply support for IRFBC30APBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFBC30A family was engineered for cost-effective, rugged high-voltage switching in consumer and industrial offline power supplies - emphasizing avalanche survivability, gate drive simplicity, and thermal stability in TO-220 packages.

FAQ

What is the maximum continuous drain current for IRFBC30APBF-BE3 at 100 °C case temperature?

The IRFBC30APBF-BE3 supports 2.3 A continuous drain current at T_C = 100 °C, per its linear derating factor of 0.69 W/°C from the 74 W maximum power dissipation at 25 °C. This value reflects thermal limitations rather than intrinsic channel capability and must be validated against actual heatsink performance in the target application.

Does IRFBC30APBF-BE3 have a RoHS-compliant and halogen-free construction?

Yes, IRFBC30APBF-BE3 is explicitly designated as lead (Pb)-free and halogen-free per Vishay's ordering nomenclature. The "-BE3" suffix indicates compliance with both RoHS Directive 2011/65/EU and JEDEC JS709B halogen-free standards, verified in Document Number 91108.

What is the gate-source threshold voltage range for IRFBC30APBF-BE3?

The gate-source threshold voltage (V_GS(th)) for IRFBC30APBF-BE3 is specified from 2.0 V to 4.5 V at T_J = 25 °C and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drive while maintaining noise immunity against spurious gate excursions in high-dV/dt environments.

Can IRFBC30APBF-BE3 be used in zero-voltage switching (ZVS) topologies?

IRFBC30APBF-BE3 can be used in ZVS applications such as resonant LLC or phase-shifted full-bridge, provided its C_oss = 70 pF and Q_gd = 11 nC are accounted for in timing calculations. However, its planar structure lacks the ultra-low C_oss of superjunction devices, so ZVS transition margins should be verified at minimum line and full load.

Is the TO-220AB package of IRFBC30APBF-BE3 electrically isolated?

Yes, the TO-220AB package used in IRFBC30APBF-BE3 features an electrically isolated metal tab that is internally connected to the drain. This allows direct mounting to a grounded heatsink without requiring insulating hardware - unlike TO-220 non-AB variants where the tab is source-connected.

IRFBC30APBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.2Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 510 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFBC30APBF-BE3 FAQ

1.How can I place an order for IRFBC30APBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBC30APBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBC30APBF-BE3 reliable?

The price and inventory of IRFBC30APBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBC30APBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFBC30APBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBC30APBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBC30APBF-BE3?

IRFBC30APBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBC30APBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBC30APBF-BE3?

For technical support, including IRFBC30APBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBC30APBF-BE3 requirements.

6.How does Aetrix verify that IRFBC30APBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFBC30APBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBC30APBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFBC30APBF-BE3?

All IRFBC30APBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFBC30APBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBC30APBF-BE3 part is unused and in its original packaging.

Return procedure for IRFBC30APBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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