Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBC40

Name: IRFBC40
Brand: Vishay Siliconix
SKU: IRFBC40
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFBC40

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFBC40.pdf

Description:: MOSFET N-CH 600V 6.2A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,045

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFBC40 from Vishay Siliconix is a 600 V, 6.2 A N-channel power MOSFET in TO-220AB package, featuring 1.2 Ω R_DS(on) at V_GS = 10 V, 60 nC total gate charge, and repetitive avalanche rating up to 6.2 A - designed for high-voltage switching in offline SMPS, AC-DC adapters, and industrial motor controls.

For engineers reviewing the IRFBC40 datasheet, IRFBC40 pinout, IRFBC40 application, or IRFBC40 equivalent, key selection criteria include its 600 V V_DS, 1.2 Ω on-resistance, 60 nC Q_g, avalanche ruggedness, and TO-220AB thermal performance for reliable operation in 50 W-class power stages.

Technical Context

The IRFBC40 is a third-generation planar vertical DMOS power MOSFET optimized for high-voltage hard-switching applications. Its structure delivers low gate charge (60 nC) with balanced C_iss/C_oss/C_rss (1300 pF / 160 pF / 30 pF), enabling fast turn-on/turn-off times (13 ns t_d(on), 20 ns t_f) while maintaining dV/dt immunity up to 3.0 V/ns.

It integrates a robust body diode with 450–940 ns reverse recovery time and 3.8–7.9 μC Q_rr, supporting unclamped inductive switching with 570 mJ single-pulse avalanche energy. Thermal design leverages R_thJC = 1.0 °C/W and R_thCS = 0.50 °C/W for efficient heatsinking in TO-220AB.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in universal-input 85–265 VAC offline converters without derating
R_DS(on) @ V_GS = 10 V	1.2 Ω - enables <6.2 A continuous conduction with ≤46 W conduction loss at T_C = 25 °C
Q_g	60 nC - determines gate drive power requirement (~1.8 mW per 100 kHz switch cycle at 10 V)
E_AS	570 mJ - allows safe operation under unclamped inductive load transients without external snubbers
t_r/t_f	18 ns / 20 ns - supports >500 kHz switching in resonant topologies with controlled EMI
T_J Range	−55 to +150 °C - qualified for industrial ambient environments with full parameter guarantee

Pinout & Package

Package: TO-220AB - standard through-hole power package with isolated drain tab, 1.0 °C/W junction-to-case thermal resistance, and mechanical mounting via M3/6-32 screw (1.1 N·m torque).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; ±20 V absolute max rating prevents oxide damage during layout transients
D (Drain)	High-voltage power output	Internally connected to metal tab; electrically isolated from case but thermally coupled - requires insulating washer if mounted to grounded heatsink
S (Source)	Power return reference	Serves as common return for gate drive and current sensing; low-inductance internal source bond wire (L_S = 7.5 nH) minimizes switching ringing

Key Features

Feature	Design Value
Repetitive avalanche rated	6.2 A I_AR, 13 mJ E_AR - enables robust overcurrent fault handling without immediate device failure in flyback or forward converters
Dynamic dV/dt immunity	3.0 V/ns - suppresses false turn-on during high-slew-rate voltage transitions across drain-source
Low Q_gd/Q_g ratio	30 nC / 60 nC = 0.5 - improves Miller immunity and reduces risk of shoot-through in half-bridge configurations
Fast body diode recovery	t_rr = 450–940 ns, Q_rr = 3.8–7.9 μC - lowers switching loss and EMI in synchronous rectification and LLC resonant circuits

Applications

Offline AC-DC Adapters	Industrial Motor Drives
Use Scenario: 36 W universal-input adapter with discontinuous conduction mode (DCM) flyback topology. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer. Use Value: 600 V V_DS and 1.2 Ω R_DS(on) ensure margin at peak line (375 V) and minimize conduction loss at full load.	Use Scenario: 1/4 HP brushless DC motor driver with 6-step commutation. IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter leg. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM dead-time transitions without clamping diodes.
LED Street Lighting Drivers	UPS Inverter Stages
Use Scenario: Constant-current 100 W LED driver using two-switch forward converter. IC Role / Device Role / Timing Role: Main power switch regulating bulk DC bus voltage before secondary-side buck stage. Use Value: 570 mJ E_AS withstands lightning surge-induced inductive spikes on AC input lines.	Use Scenario: 1 kVA online UPS with double-conversion architecture. IC Role / Device Role / Timing Role: DC-link switch in bidirectional inverter stage converting battery DC to grid-synchronized AC. Use Value: TO-220AB package with R_thJC = 1.0 °C/W sustains 125 W P_D at T_C = 25 °C for short-term overload support.

Offline AC-DC Adapters

Industrial Motor Drives

Use Scenario: 36 W universal-input adapter with discontinuous conduction mode (DCM) flyback topology.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer.

Use Value: 600 V V_DS and 1.2 Ω R_DS(on) ensure margin at peak line (375 V) and minimize conduction loss at full load.

Use Scenario: 1/4 HP brushless DC motor driver with 6-step commutation.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter leg.

Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM dead-time transitions without clamping diodes.

LED Street Lighting Drivers

UPS Inverter Stages

Use Scenario: Constant-current 100 W LED driver using two-switch forward converter.

IC Role / Device Role / Timing Role: Main power switch regulating bulk DC bus voltage before secondary-side buck stage.

Use Value: 570 mJ E_AS withstands lightning surge-induced inductive spikes on AC input lines.

Use Scenario: 1 kVA online UPS with double-conversion architecture.

IC Role / Device Role / Timing Role: DC-link switch in bidirectional inverter stage converting battery DC to grid-synchronized AC.

Use Value: TO-220AB package with R_thJC = 1.0 °C/W sustains 125 W P_D at T_C = 25 °C for short-term overload support.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 5.5 A, R_DS(on) = 1.2 Ω, Q_g = 45 nC, Zener-protected gate	Lower Q_g improves efficiency at >200 kHz; lacks specified avalanche energy rating	Preferred for high-frequency PFC stages where gate protection and lower drive loss outweigh avalanche margin needs
FQP6N60C	600 V, 6.0 A, R_DS(on) = 1.3 Ω, Q_g = 52 nC, no avalanche rating	Higher R_DS(on) increases conduction loss by ~8%; no guaranteed avalanche capability	Suitable for cost-sensitive non-critical applications where transient overvoltage stress is mitigated externally

Compared with STP6NK60ZFP and FQP6N60C, the IRFBC40 provides higher avalanche energy (570 mJ) and tighter gate threshold (2.0–4.0 V), making it preferable for ruggedized offline SMPS designs requiring intrinsic fault tolerance without added protection circuitry.

Availability

IRFBC40 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial motor drives, and LED street lighting drivers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFBC40 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-voltage performance.

The IRFBC40 belongs to Vishay's third-generation power MOSFET family engineered for cost-effective, high-efficiency switching in commercial and industrial power conversion systems up to 50 W dissipation.

FAQ

What is the maximum continuous drain current for IRFBC40 at 100 °C case temperature?

The IRFBC40 supports 3.9 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature. The IRFBC40 maintains 1.2 Ω R_DS(on) up to this temperature, enabling predictable conduction loss modeling in thermal design.

Does IRFBC40 have a specified avalanche energy rating?

Yes, the IRFBC40 is repetitively avalanche rated with 13 mJ E_AR and single-pulse rated for 570 mJ E_AS under defined test conditions (V_DD = 50 V, L = 27 mH, I_AS = 6.2 A). These values are measured per JEDEC standards and documented in the Vishay S21-0868 datasheet. The IRFBC40's avalanche capability is integral to its ruggedized design for inductive switching applications.

What is the gate-source threshold voltage range for IRFBC40?

The IRFBC40 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drive while preventing unintended conduction from noise or leakage. The IRFBC40's typical V_GS(th) stability supports consistent timing in hard-switched topologies across temperature and process variation.

Is IRFBC40 compatible with lead-free soldering processes?

Yes, the IRFBC40PbF-BE3 variant is lead (Pb)-free and halogen-free, qualified for lead-free reflow soldering with peak temperature up to 300 °C for 10 seconds. The IRFBC40PbF-BE3 complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard. Standard IRFBC40PbF is Pb-terminated and not RoHS-compliant.

What is the typical reverse recovery time of the body diode in IRFBC40?

The IRFBC40 body diode exhibits a typical reverse recovery time (t_rr) of 450 ns and maximum of 940 ns at T_J = 25 °C, I_F = 6.2 A, and dI/dt = 100 A/μs. This value is critical for estimating switching loss and EMI in topologies relying on body diode conduction, such as asynchronous rectification. The IRFBC40's t_rr is characterized in the official Vishay datasheet Figure 7 and Table "Drain-Source Body Diode Characteristics".

IRFBC40 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 3.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFBC40 FAQ

1.How can I place an order for IRFBC40 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBC40 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBC40 reliable?

The price and inventory of IRFBC40 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBC40 is usually 5 days.

3.What payment methods are accepted for IRFBC40?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBC40 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBC40?

IRFBC40 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBC40 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBC40?

For technical support, including IRFBC40 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBC40 requirements.

6.How does Aetrix verify that IRFBC40 is sourced from the original manufacturer or authorized distributors?

All IRFBC40 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBC40 meets industry standards.

7.What is the process for return or replacement of IRFBC40?

All IRFBC40 units undergo pre-shipment inspection (PSI). If there is an issue with IRFBC40, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBC40 part is unused and in its original packaging.

Return procedure for IRFBC40:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …